Semiconductor device

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Description

FIG. 1 is a front elevational view of a semiconductor device, showing our new design;

FIG. 2 is a rear elevational view thereof;

FIG. 3 is a top plan view thereof;

FIG. 4 is a bottom plan view thereof;

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a right side elevational view thereof;

FIG. 7 is an enlarged cross-sectional view thereof, taken along line 7--7 in FIG 1;

FIG. 8 is an enlarged cross-sectional view thereof, taken along line 8--8 in FIG. 1; and,

FIG. 9 is a front, right side and bottom perspective view thereof.

Referenced Cited
U.S. Patent Documents
D317592 June 18, 1991 Yoshizawa
D359028 June 6, 1995 Siegel et al.
D360619 July 25, 1995 Terasawa et al.
D394244 May 12, 1998 Majumdar et al.
D396213 July 21, 1998 Enomoto et al.
D397092 August 18, 1998 Sano et al.
D401912 December 1, 1998 Majumdar et al.
5089929 February 18, 1992 Hilland
Patent History
Patent number: D418485
Type: Grant
Filed: Feb 17, 1999
Date of Patent: Jan 4, 2000
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo)
Inventors: Hisashi Kawafuji (Tokyo), Mitsutaka Iwasaki (Tokyo), Gourab Majumdar (Tokyo), Toshiaki Shinohara (Tokyo)
Primary Examiner: Brian N. Vinson
Law Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Application Number: 0/100,730
Classifications
Current U.S. Class: Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;