RF electrode for a process tube of semiconductor manufacturing apparatus

- Tokyo Electron Limited
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Description

FIG. 1 is a front view of a RF electrode for a process tube of semiconductor manufacturing apparatus showing our new design;

FIG. 2 is a back view thereof;

FIG. 3 is a plan view thereof;

FIG. 4 is a left side view thereof;

FIG. 5 is a right side view thereof;

FIG. 6 is an enlarged sectional view taken along with line VI—VI of FIG. 1;

FIG. 7 is an enlarged sectional view taken along with line VII—VII of FIG. 1;

FIG. 8 is a perspective view as seen from the front side thereof;

FIG. 9 is a reference drawing showing a state of use of a RF electrode; and,

FIG. 10 is a reference drawing showing a state of use of a RF electrode.

Claims

The ornamental design for a RF electrode for a process tube of semiconductor manufacturing apparatus, as shown and described.

Referenced Cited
U.S. Patent Documents
2481079 September 1949 Casey
3323954 June 1967 Goorissen
D320446 October 1, 1991 Grossi et al.
D436138 January 9, 2001 Chiasson
6277260 August 21, 2001 Kaufman et al.
Patent History
Patent number: D564462
Type: Grant
Filed: Jun 2, 2006
Date of Patent: Mar 18, 2008
Assignee: Tokyo Electron Limited (Tokyo-To)
Inventors: Katsutoshi Ishii (Tokyo), Hiroyuki Matsuura (Tokyo)
Primary Examiner: Robert M. Spear
Assistant Examiner: Anna K Dworzecka
Attorney: Smith, Gambrell & Russell, LLP
Application Number: 29/260,830