RF electrode for a process tube of semiconductor manufacturing apparatus
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Description
Claims
The ornamental design for a RF electrode for a process tube of semiconductor manufacturing apparatus, as shown and described.
Referenced Cited
Patent History
Patent number: D564462
Type: Grant
Filed: Jun 2, 2006
Date of Patent: Mar 18, 2008
Assignee: Tokyo Electron Limited (Tokyo-To)
Inventors: Katsutoshi Ishii (Tokyo), Hiroyuki Matsuura (Tokyo)
Primary Examiner: Robert M. Spear
Assistant Examiner: Anna K Dworzecka
Attorney: Smith, Gambrell & Russell, LLP
Application Number: 29/260,830
Type: Grant
Filed: Jun 2, 2006
Date of Patent: Mar 18, 2008
Assignee: Tokyo Electron Limited (Tokyo-To)
Inventors: Katsutoshi Ishii (Tokyo), Hiroyuki Matsuura (Tokyo)
Primary Examiner: Robert M. Spear
Assistant Examiner: Anna K Dworzecka
Attorney: Smith, Gambrell & Russell, LLP
Application Number: 29/260,830
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)