Semiconductor device
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Description
The broken line in the figure drawings is included for the purpose of illustrating environment and forms no part of the claimed design.
Claims
The ornamental design for a semiconductor device, as shown and described.
Referenced Cited
Patent History
Patent number: D783549
Type: Grant
Filed: Jun 18, 2015
Date of Patent: Apr 11, 2017
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Rei Yoneyama (Tokyo), Takehiro Araki (Fukuoka), Yoshitaka Kimura (Tokyo), Akira Goto (Fukuoka), Akihiko Yamashita (Hyogo), Mariko Ono (Fukuoka), Ryo Goto (Tokyo)
Primary Examiner: Daniel Bui
Application Number: 29/530,661
Type: Grant
Filed: Jun 18, 2015
Date of Patent: Apr 11, 2017
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Rei Yoneyama (Tokyo), Takehiro Araki (Fukuoka), Yoshitaka Kimura (Tokyo), Akira Goto (Fukuoka), Akihiko Yamashita (Hyogo), Mariko Ono (Fukuoka), Ryo Goto (Tokyo)
Primary Examiner: Daniel Bui
Application Number: 29/530,661
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)