Semiconductor device

- ROHM CO., LTD.
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Description

FIG. 1 is a front, top, and right side perspective view of a semiconductor device showing our new design;

FIG. 2 is a rear, bottom and left side perspective view thereof;

FIG. 3 is a front view thereof, the rear view being an identical image of FIG. 3;

FIG. 4 is a top plan view thereof;

FIG. 5 is a bottom plan view thereof;

FIG. 6 is a right side view thereof;

FIG. 7 is a left side view thereof;

FIG. 8 is an enlarged view of the portion indicated by line 8-8 in FIG. 6; and,

FIG. 9 is an enlarged view of the portion indicated by line 9-9 in FIG. 7.

The broken lines illustrate portions of the semiconductor device that form no part of the claimed design. The dash-dotted lines denote the boundary of the claim and form no part of the claimed design.

Claims

The ornamental design for a semiconductor device, as shown and described.

Referenced Cited
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Other references
  • ON Semiconductor, announced on Aug. 19, 2018 [online], retrieved on Aug. 8, 2020, retrieved from internet, https://www.amazon.com/Semiconductor-LM2902N-LM2902-Quadruple-Operational/dp/B07GNRVNV4 (Year: 2018).
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  • Rohm, announced on Jul. 20, 2021 [online], retrieved on Aug. 8, 2022, https://web.archive.org/web/20210720165742/https://www.rohm.com/news-detail?news-title=hybrid-igbts-with-built-in-sic-diode&defaultGroupId=false (Year: 2021).
Patent History
Patent number: D999747
Type: Grant
Filed: Jan 26, 2021
Date of Patent: Sep 26, 2023
Assignee: ROHM CO., LTD. (Kyoto)
Inventors: Kohei Tanikawa (Kyoto), Kenji Hayashi (Kyoto)
Primary Examiner: David G Muller
Assistant Examiner: Noah Perez
Application Number: 29/767,915