Abstract: Programmable nanotube interconnect is disclosed. In one embodiment, a method includes forming a interconnect layer using a plurality of nanotube structures, and automatically altering a route of an integrated circuit based on an electrical current applied to at least one of the plurality of nanotube structures in the interconnect layer. Neighboring interconnect layers separated by planar vias may include communication lines that are perpendicularly oriented with respect to each of the neighboring interconnect layers. The nanotube structure may be chosen from a group comprising a polymer, carbon, and a composite material. A carbon nanotube film may be patterned in a metal layer to form the plurality of nanotube structures. A sputtered planar process may be performed across a trench of electrodes to create the carbon nanotube structures.

Abstract: A semiconductor device is provided which is capable of avoiding malfunction and latchup breakdown resulting from negative variation of high-voltage-side floating offset voltage (VS). In the upper surface of an n-type impurity region (28), a p+-type impurity region (33) is formed between an NMOS (14) and a PMOS (15) and in contact with a p-type well (29). An electrode (41) resides on the p+-type impurity region (33) and the electrode (41) is connected to a high-voltage-side floating offset voltage (VS). The p+-type impurity region (33) has a higher impurity concentration than the p-type well (29) and is shallower than the p-type well (29). Between the p+-type impurity region (33) and the PMOS (15), an n+-type impurity region (32) is formed in the upper surface of the n-type impurity region (28). An electrode (40) resides on the n+-type impurity region (32) and the electrode (40) is connected to a high-voltage-side floating supply absolute voltage (VB).

Abstract: A method of manufacturing a memory device addressing reliability and refresh characteristics through the use of a multilayered doped conductor, and a method making is described. The multilayered doped conductor creates a high dopant concentration in the active area close to the channel region. The rich dopant layer created by the multilayered doped conductor is less susceptible to depletion from trapped charges in the oxide. This improves device reliability at burn-in and lowers junction leakage, thereby providing a longer period between refresh cycles.

Abstract: A field effect transistor, which is arranged in a semiconductor device, comprises a first and a second doped source/drain region, both regions being arranged within a semiconductor substrate on either side of a gate electrode, and a channel region formed within the substrate between both doped source/drain regions beneath said gate electrode. A gate oxide layer is formed upon the semiconductor substrate. The gate electrode contacts a surface of the gate oxide layer and further comprises at least a first and a second conductive layer, wherein the first and second conductive layers are made of materials having different work functions with respect to each other. The first conductive layer contacts the gate oxide layer within a first portion of the surface, and the second conductive layer contacts the gate oxide layer within a second portion of the surface. The first conductive layer is further conductively connected to the second conductive layer.

Abstract: A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

Abstract: It is made possible to provide a highly-reliable, high-performance semiconductor device that reduces the intensity of the electric field in the gate insulating film, has a higher current driving force, and can operate at a high speed. A semiconductor device includes: a semiconductor region provided on a substrate; source and drain regions provided in the semiconductor region at a distance from each other so as to face each other; a semiconductor layer provided on the source and drain regions and a region interposed between the source region and the drain region; a gate insulating film provided at least above the region interposed between the source region and the drain region so as to sandwich the semiconductor layer between the gate insulating film and the region interposed between the source region and the drain region; and a gate electrode provided on the gate insulating film.

Abstract: Structures and methods for forming the same. The semiconductor structure includes (a) a substrate having a top substrate surface; (b) a channel region on the top substrate surface; (c) a gate dielectric region on the top substrate surface; and (d) a gate electrode region on the top substrate surface. The channel region is electrically insulated from the gate electrode region by the gate dielectric region. The semiconductor structure also includes first and second source/drain regions on the substrate. The channel region is disposed between the first and second source/drain regions. The channel region and the gate dielectric region are in direct physical contact with each other via an interfacing surface, which is essentially perpendicular to the top substrate surface. Each of the first and second source/drain regions comprises a crystal material that has a different lattice constant or spacing than that in the channel area.

Abstract: An upper sealing ring and a lower sealing ring are adhered by sealing solder. The width of tip end of sealing projection is narrower than the width of the lower sealing ring. Therefore, the sealing solder is placed on lower sealing ring and on the side surface of upper sealing ring. Further, an upper connection pad and a lower connection pad are adhered by connecting solder. The width of a tip end of a connection projection is narrower than the width of lower connection pad. Therefore, the connecting solder is placed on the lower connection pad and on the side surface of upper connection pad. Thus, a package is provided, which attains satisfactory electrical connection and hermetic seal after solder joint of the upper and lower substrates.

Abstract: A wirelessly powered flexible tag configured to be in contact with a substrate is provided. The tag includes a coupling layer configured to couple the tag to the substrate. An electrical circuit disposed on the coupling layer and configured to interact wirelessly with an external stimulus. The tag further includes at least one electrode or at least one heating element in operative association with the electrical circuit, and configured to generate electrical energy or thermal energy, respectively. Upon wireless interaction with the external stimulus the tag is configured to induce an electrical response, a thermal response, or a combination of both in the substrate.

Abstract: A CMOS image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a inner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material.

Abstract: The invention relates to microelectromechanical components, like microelectromechanical gauges used in measuring e.g. acceleration, angular acceleration, angular velocity, or other physical quantities. The microelectromechanical component, according to the invention, comprises a microelectromechanical chip part, sealed by means of a cover part, and an electronic circuit part, suitably bonded to each other. The aim of the invention is to provide an improved method of manufacturing a microelectromechanical component, and to provide a microelectromechanical component, which is applicable for use particularly in small microelectromechanical sensor solutions.

Abstract: A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals.

Abstract: A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.

Abstract: The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.

Abstract: A photodetector made in monolithic form in a lightly-doped substrate of a first conductivity type. This photodetector comprises at least two photodiodes and comprises a first region of the first conductivity type more heavily doped than the substrate extending at least between the two photodiodes; and a second region of the first conductivity type more heavily doped than the substrate and extending under the first region and under one of the two photodiodes, the first region or the second region, with the first region, delimiting a substrate portion at the level of said one of the two photodiodes, and the second region, with the first region, delimiting an additional substrate portion at the level of the other one of the two photodiodes.

Abstract: An electroluminescent material slot waveguide generates light in response to current injection. In one embodiment, the waveguide is formed as part of an optical resonator, such as ring resonator waveguide or distributed Bragg reflector with an anode and cathode for electrical stimulation. A compact, electrically-driven resonant cavity light emitting devices (RCLED) for Si microphotonics may be formed. Several different rare-earth ions, such as erbium, terbium and ytterbium, can be used to dope SiO2 in order to emit light at different wavelengths.

Abstract: A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

Abstract: A semiconductor device having a substrate that contains an insulating layer and a semiconductor layer provided on the insulating layer. The semiconductor also has an optical waveguide that is formed along a predetermined path. This optical waveguide is formed by making the semiconductor layer non-uniformed in thickness thereof. The semiconductor further has a photoreceptor having MISFET containing a floating channel body that is formed on a position of the semiconductor layer in which electric field of light guided inside the optical waveguide exists and a gate for forming channel formed on a front surface side of the channel body.

Abstract: A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film.

Abstract: A chip is provided which includes an active semiconductor region and a field effect transistor (“FET”) having a channel region, a source region and a drain region all disposed within the active semiconductor region. The FET has a longitudinal direction in a direction of a length of the channel region, and a transverse direction in a direction of a width of the channel region. A buried dielectric stressor element has a horizontally extending upper surface at a first depth below a major surface of a portion of the active semiconductor region, such as an east portion of the active semiconductor region. A surface dielectric stressor element is disposed laterally adjacent to the active semiconductor region at the major surface of the active semiconductor region. The surface dielectric stressor element extends from the major surface to a second depth not substantially greater than the first depth.

Abstract: An integrated circuit device has a substrate with first and second portions. One or more first active regions are formed in the first portion of the substrate. Each of the one or more first active regions has rounded corners. One or more first circuit elements are formed on the one or more first active regions after the corners of the one or more first active regions have been rounded. One or more second active regions are formed in the second portion of the substrate. One or more second circuit elements are formed on the one or more second active regions.

Abstract: An integrated passive device system is disclosed including forming a first dielectric layer over a semiconductor substrate, depositing a metal capacitor layer and a silicide layer on the first dielectric layer, forming a second dielectric layer over the metal capacitor layer and the silicide layer, and depositing a metal layer over the second dielectric layer for forming the integrated capacitor, an integrated resistor, an integrated inductor, or a combination thereof.

Abstract: Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are parallel to the first and second lower interconnects. A first fuse is provided on the first and second lower interconnects between the first and second lower interconnects and is electrically coupled to the first and second lower interconnects. A second fuse is provided spaced apart from the first fuse and on the third and fourth lower interconnects. The second fuse is between the third and fourth lower interconnects and is electrically coupled to the third and fourth lower interconnects. Related methods of fabricating integrated circuit devices are also provided.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically connected to a power source. The power source can provide current to the device via the contact structures. The contact structures can be designed to improve current distribution in electronic devices. For example, the contact resistance of the contacts may be modified to improve current distribution (e.g., by controlling the shape and/or structure and/or composition of the contacts). The contact structures may include an intervening layer (e.g., a non-ohmic layer) positioned between a surface of the device and a conductive portion extending from a conductive pad. The intervening layer and/or conductive portions may be designed to have certain shapes (e.g.

Abstract: An article includes a substrate, a transition layer, and a diamond like carbon film. The transition layer is directly formed on a surface of the substrate. The diamond like carbon film is deposited on the transition layer, in contact therewith. The diamond like carbon film includes a nitrogen-doped diamond like carbon layer, a nitrogen-hydrogen doped diamond like carbon layer, and a hydrogen-doped diamond like carbon layer formed on the transition layer, in series. The nitrogen-doped diamond like carbon layer, in particular, is immediately adjacent the transition layer.

Abstract: A printed circuit board with a quartz crystal oscillator includes a mounting area for receiving the quartz crystal oscillator, two first vias, and two second vias. A copper foil is arranged on the mounting area. Pins of the quartz crystal oscillator are inserted into the first vias. The second vias are connected to a ground layer of the PCB and communicate with the copper foil, for transmitting noise of the quartz crystal oscillator to the ground layer of the PCB.

Abstract: An integrated circuit package system includes an integrated circuit, and forming a patterned redistribution pad over the integrated circuit.

Abstract: Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric cmaterial, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.

Abstract: An ultra-thin Quad Flat No-Lead (QFN) semiconductor chip package having a leadframe with lead terminals formed by recesses from both the top and bottom surfaces and substantially aligned contact areas formed on either the top or bottom surfaces. A die is electrically connected to the plurality of lead terminals and a molding compound encapsulates the leadframe and die together so as to form the ultra-thin QFN package. Accordingly, the substantially aligned contact areas are exposed on both the top and bottom surfaces of the package. The present disclosure also provides an ultra-thin Optical Quad Flat No-Lead (OQFN) semiconductor chip package, a stacked semiconductor module comprising at least two QFN semiconductor chip packages, and a method for manufacturing an ultra-thin Quad Flat No-Lead (QFN) semiconductor packages.

Abstract: A semiconductor element has a circuit formation surface on which electrode terminals are arranged in a peripheral part thereof. The semiconductor element is encapsulated by a mold resin on a substrate which has openings at positions corresponding to the electrodes of the semiconductor element. The semiconductor element is mounted to the substrate in a state where the circuit formation surface faces the substrate and the electrode terminals are positioned at the openings and a back surface opposite to the circuit formation surface of the semiconductor element is exposed from the mold resin. A heat-emitting member formed of a metal plate is provided on a surface of the substrate opposite to a surface on which the semiconductor element is mounted. The surface of the heat-emitting member being exposed from the mold resin.

Abstract: Packaging of MEMS and other devices, and in some cases, devices that have vertically extending structures. Robust packaging solutions for such devices are provided, which may result in superior vacuum performance and/or increased protection in some environments such as high-G environments, while also providing high volume throughput and low cost during the fabrication process.

Abstract: A family of package substrates adapted to receive a family of integrated circuits having different sizes and provide electrical connections between the integrated circuits and a circuit board. Each package substrate in the family includes a package substrate having a die side and a circuit board side. The package substrate has a size that is consistent for all of the package substrates in the family of package substrates. The die side has integrated circuit contacts disposed in a pattern designed to make electrical connections to a given integrated circuit in the family of integrated circuits for which the package substrate is designed, as defined by locations of contacts on the given integrated circuit. The circuit board side has circuit board contacts disposed in a pattern and with functional assignments that are consistent for all of the package substrates in the family of package substrates.

Abstract: An integrated circuit package system includes forming lead structures including a dummy tie bar having an intersection with an outer edge of the integrated circuit package system, and connecting an integrated circuit die to the lead structures.

Abstract: A die package having an adhesive flow restriction area. In a first embodiment, the adhesive flow restriction area is formed as a trench in a transparent element. A second embodiment has a transparent element with an adhesive flow restriction area formed as a plurality of trenches that extend from one edge of the transparent element to the other edge. A third embodiment has a transparent element with an adhesive flow restriction area formed as a plurality of trenches. A fourth embodiment has a transparent element with an adhesive flow restriction area formed as a protuberance. A fifth embodiment comprises a trench in the die. A sixth embodiment has a die with a plurality of trenches in the die as an adhesive flow restriction area. A seventh embodiment has a die with a protuberance.

Abstract: A carrier board structure with a semiconductor chip embedded therein is provided, which includes a carrier board having a first surface with at least one opening and a second surface. Allowing a semiconductor chip to be embedded in the opening in a manner that the active surface of the semiconductor chip is slightly lower than the first surface of carrier board. An adhesive material is used to fill in the gap between the carrier board and the semiconductor chip, and to cover a part of the active surface of the semiconductor chip for fixing the semiconductor chip in the opening. As the adhesive material is used to surround the periphery of the semiconductor chip, and the gap between the semiconductor chip and the carrier board can completely filled with the adhesive material without formation of voids therein, the semiconductor chip can be free from cracking issue. Further, the popcorn effect of the carrier board can be prevented form occurrence.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each package including a die attached to a substrate, in which the upper and lower substrates are interconnected by wire bonding, and in which the upper package is inverted. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: The present invention provides a system and method that mounts integrated circuit devices onto substrates and a system and method for employing the method is stacked modules. The contact pads of a packaged integrated circuit device are substantially exposed. A solder past that includes higher temperature solder paste alloy is applied to a substrate or to the integrated circuit device to be mounted. The integrated circuit device is positioned to contact the contacts of the substrate. Heat is applied to create high temperature joints between the contacts of the substrate and the integrated circuit device resulting in a device-substrate assembly with high temperature joints. The formed joints are less subject to re-melting in subsequent processing steps. The method may be employed in devising stacked module constructions such as those disclosed herein as preferred embodiments in accordance with the invention. Typically, the created joints are low in profile.

Abstract: A non-leaded integrated circuit package system is provided providing a die paddle of a lead frame, forming a dual row of terminals including outer terminal pads and inner terminal pads, and selectively fusing an extension between the die paddle and instances of the inner terminal pads.

Abstract: An integrated circuit stacking system is provided including fabricating an integrated passive device including: providing a semiconductor substrate, forming an integrated inductor, a resistor block, or an integrated capacitor integrated on the semiconductor substrate, and forming contact pads, on the semiconductor substrate, coupled to the integrated inductor, the resistor block, or the integrated capacitor; positioning an integrated circuit die for maintaining an inductor spacing; mounting the integrated circuit die on the integrated passive device; and encapsulating the integrated circuit die and the integrated passive device.

Abstract: A chip includes a plurality of pins; and a plurality of symbols defined on a surface of the chip, wherein the symbols are arranged as a graduated scale corresponding with the pins. It becomes very easy to find a initial pin from among the plurality of pins of the chip.

Abstract: A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.

Abstract: A stackable semiconductor package includes a board having first electrical connections, an integrated circuit chip fixed on a front face of the board, second electrical connections which connect the chip to the first electrical connections of the board and front electrical contact terminals arranged beyond at least one edge of the chip on the front face of this board. An encapsulation block of a coating material is formed on the front face of the board and encapsulates the chip, its electrical connections and the front terminals. The block has at least one opening which at least partially uncovers the front terminals with a view to receiving electrical connection beads of a stacked second package. This one opening is preferably in the form of a groove.

Abstract: A cooling apparatus is disclosed that has a first cooling structure, in thermal contact with a heat source having a temperature greater than a cool structure, comprising a channel through which a cooling fluid is passed, an isolator between the heat source and the cool structure, the isolator in thermal contact with the first cooling structure and comprising a material of low thermal conductivity, and a second cooling structure between the isolator and the cool structure, the second cooling structure comprising a channel through which cooling fluid is passed.

Abstract: An encapsulated microelectronic package includes a fluid conducting cooling tube directly coupled to one or more semiconductor chips, with the encapsulant being molded over the semiconductor chips and portions of the cooling tube in proximity to the semiconductor chips. The encapsulant immobilizes the cooling tube with respect to the semiconductor chips, and the cooling tube and encapsulant are designed to minimize differences in their coefficients of thermal expansion relative to the semiconductor chips.

Abstract: Heat sink structures employing mutli-layers of carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. In one embodiment, the nanotubes are cut to essentially the same length over the surface of the structure. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Abstract: Heat sink structures employing carbon nanotube or nanowire arrays exposed from both opposite surfaces of the structure to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. In one embodiment, the nanotubes are cut to essentially the same length over the surface of the structure. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Abstract: A rotary chip attach process and manufacturing approach takes chips (e.g., integrated circuits (ICs)) from a wafer in a rotary process. A chip wafer with a positioning unit is placed over the top of a sprocketed wheel that picks the ICs directly from the wafer and moves them in a semi-continuous in-step motion to a web that will accept the ICs. The sprocketed wheel includes chips that are preferably the same type as used in a typical pick-and-place robotic system, with vacuum heads adapted to pierce the wafer flat membrane (if needed), grab and IC and place and IC as desired. This positioning system keeps the IC's placement in an accurate position on the web, which can be made to move continuously with a plurality of sprocketed wheel placement units in place.

Abstract: A memory module comprises a base plate and one or more IC embedding seats formed thereon to provide IC memory chip being installed in detachable manner taking the advantage of easy installation, convenient maintenance or replacement of IC memory chip, particularly no longer using SMT, soldering paste, or flux for IC maintenance and replacement; the IC embedding seat comprises a mainbody and a sliding cover formed a cover to the mainbody with sliding movement to open or close the mainbody, and the mainbody has one or more IC mounting compartments has a plurality of conducting pin units arrayed in matrix arrangement to form electric connection with the base plate; during IC maintenance and replacement, the defective IC memory chip shall be freely removed from the memory module without de-soldering to prevent other good IC memory chip from damage due to high temperature.

Abstract: Provided are a semiconductor package which is small in size but includes a large number of terminals disposed at intervals equal to or greater than a minimum pitch, and a method of fabricating the semiconductor package. The semiconductor package includes a semiconductor chip having a bottom surface on which a plurality of bumps are formed, redistribution layer patterns formed under the semiconductor chip and each including a first part electrically connected to at least one of the bumps and a second part electrically connected to the first part, an encapsulation layer surrounding at least a top surface of the semiconductor chip, and a patterned insulating layer formed below the redistribution layer patterns and exposing at least parts of the second parts of the redistribution layer patterns.

Abstract: One aspect of the invention relates to an interconnecting element between a semiconductor chip of a semiconductor wafer and a circuit support and to a method for producing and using the interconnecting element. Such interconnecting elements are arranged between contact areas of a semiconductor chip of a semiconductor wafer and contact terminal areas of a circuit support. The contact areas on the semiconductor chip or the semiconductor wafer, respectively, are arranged in depressions of a top of an insulating cover layer and are freely accessible. The interconnecting elements have a mushroom shape with a mushroom cap in a first metal area. On the mushroom cap of the first metal area, a second metal area is arranged which has high-melting intermetallic phases of metals of a solder material and the metal of the contact terminal areas of the circuit support.