Abstract: A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.

Abstract: Thermal and/or acoustic insulation materials based on dried precipitated silica, having a total pore volume of from 1 to 5 cm3/g and optionally containing reinforcing fillers and/or opacifying agents, are prepared by: (A) filtering an aqueous dispersion D containing precipitated silica particles in a filter press, whereby a compacted filter cake is obtained; and then (B) drying the filter cake in the compacted state as obtained after step (A).

Abstract: Piezoelectric compositions of the formula Pb(1-z)Mz(Mg1/3Nb2/3)x(ZryTi1-y)1-xO3 where M can be either Sr or Ba or both, x is between about 0.35 and about 0.40, y is between about 0.36 and about 0.42, and z is between about 0.04 and about 0.08. The piezoelectric ceramic is provided as a composite perovskite structure. Additional materials or dopants can be added to the piezoelectric ceramic of the present invention. Example of dopants that can be added to the piezoelectric ceramic include, but are not limited to: MnO2, Ni2O3, TeO3, TeO2, MoO3, Nb2O5, Ta2O5, CoCO3, and Y2O3. The piezoelectric ceramics of the present invention can be used to fabricate piezoelectric elements for a wide variety of devices that can be fabricated to exhibit high power applications including miniaturized displacement elements, buzzers, transducers, ultrasonic sensors and ultrasonic generators, and the like.

Abstract: It is an object to provide a ferrite material which has a higher saturation magnetic flux density and low core loss, both at 100° C. The ferrite material is composed of a sintered body containing Fe, Mn and Zn as main constituents at x, y and z % by mol in terms of Fe2O3, MnO and ZnO, respectively, and containing Li as an additive at v % by weight in terms of Li2CO3 based on the main constituents, wherein x=55.7 to 60, z=3 to 8.5, y=100?x?z, v=0.3 to 0.8, and x1?x?x2 (x1=52.9?0.1z+8.5v and x2=54.4?0.1z+8.5v).

Abstract: The present application provides a refrigerant composition for a single stage refrigeration system operation comprising: more than 25 molar percent but less than 30 molar percent of Nitrogen; at least some but less than 20 molar percent of Methane; more than 30 molar percent but less than 70 molar percent of Propane, Argon, Helium, Neon and combinations thereof, and optionally up to 45 molar percent of Ethane, Ethylene and combinations thereof and a process for preparing the said composition.

Abstract: The present invention relates to heat-transfer concentrates for solar installations, containing a) from 92 to 99% by weight of at least one polyglycol of the formula R—O—(CH2—CH2—O)n—H, in which n is an integer of from 3 to 500 and R is H, a C1- to C4-alkyl group or an aromatic radical having 6 to 12 carbon atoms, b) from 1 to 8% by weight of at least one corrosion inhibitor, with the proviso that its content of ethylene glycol and 1,2-propylene glycol is less than 0.2% by weight.

Abstract: According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.

Abstract: The polishing composition contains polyoxyethylene sorbitan mono-fatty acid ester, silicon dioxide, water soluble cellulose, an alkaline compound, and water. The content of polyoxyethylene sorbitan mono-fatty acid ester in the polishing composition is less than 0.0025% by mass. The polishing composition is appropriate for final polishing of silicon wafers.

Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

Abstract: Acid water containing negative charge oxygen atoms and showing an acidity level higher than pH 5 is provided. Acid water of a pH level not lower than pH 5 is prepared by conveying negative charge oxygen atoms produced by heating a composite oxide enclosing active oxygen by themselves or by means of gas not reacting with water and contacting them with water.

Abstract: A system and method for increasing the efficiency and/or power produced by an integrated gasification combined cycle system by increasing the integration between the air separation unit island of the integrated gasification combined cycle system and the remainder of the system. By integrating one or more of the nitrogen and oxygen gas product streams from the air separation unit in the remainder of the integrated gasification combined cycle system, heat may be utilized that helps to increase the efficiency of the combustion reaction and/or the gasification reaction used to produce the syngas utilized in the system.

Abstract: A conductive composition comprising a vapor grown carbon fiber having an aspect ratio of 40 to 1,000, preferably 65 to 1,000, and a specific surface area or fiber diameter of the fiber within a predetermined range, and a preferable peak intensity ratio (I0=I1360/I1580) of 0.1 to 1, wherein I1580 represents a peak height at 1,580 cm?1 and I1360 represents a peak height at 1,360 cm?1 in a Raman scattering spectrum; and a resin composition containing the composition; and a production method thereof.

Abstract: A highly conductive wet coating composition including a molten salt and a highly conductive thin film prepared therefrom is provided. The highly conductive wet coating composition can be coated at room temperature and the thin film prepared therefrom has a good thin film characteristic and high conductivity.

Abstract: The object of the invention is to provide an antistatic agent exhibiting an excellent property of preventing film-thinning phenomenon and fogging in chemically amplified resists, an antistatic film using the antistatic agent and a product coated therewith. The antistatic agent comprising the water-soluble electroconductive polymer, the solvent and the water-soluble polymer. By using a water-soluble polymer, especially a water-soluble polymer compound having a polypeptide bond or a specific water-soluble polymer compound having a polyvinyl structure in combination with a water-soluble electroconductive polymer in an antistatic agent, influences on resist (such as fogging, film-thinning phenomenons and dissolution of resist after developing of resist) can be suppressed even when surfactant is added into the antistatic agent for the purpose of imparting coatability inexpensively and easily, while maintaining coatability of the agent.

Abstract: There is provided a method for producing a silver powder having excellent dispersibility and capable of forming a paste which do not form suspended matters by phase separation and which is printed on a substrate to form a film having a uniform thickness. In this method, an alkali or a complexing agent is added to an aqueous silver salt containing solution to form a silver oxide containing slurry or an aqueous silver complex salt containing solution. After or before silver particles are deposited by reduction by adding a reducing agent to the silver oxide containing slurry or aqueous silver complex salt containing solution while stirring it, at least one chelating agent selected from the group consisting of compounds having an azole structure, dicarboxylic acids, hydroxy carboxylic acids and salts thereof is added to a silver power containing slurry solution as a dispersing agent.

Abstract: A flame retardant resin composition is disclosed. An acrylonitrile-styrene based polymer, into which sulfonic acid groups and/or sulfonate groups have been introduced by sulfonating processing with a sulfonating agent containing less than 3 wt % of moisture, is conatined in a resin to be made flame retardant, so that flame retardant properties will be conferred on the resin flame resistant.

Abstract: A lifter with an adjustable wheel base comprising a lever assembly, an adjustable axle assembly and a lifting assembly. The lifting assembly may be magnetic and may additionally comprise safety cables having other attachment mechanisms.

Abstract: A unibody hydraulic nut for tensioning multiple threaded fasteners includes an unibody containing two or more pistons to generate a clamping load, castellated locking collars with angled vertical castellations to engage a socket with matching castellations to enable easy turning by remotely operated means to capture the clamping load, internal hydraulic ports contained within the unibody linking each piston, seals to maintain the hydraulic pressure within the multiple annular pressure areas and an external hydraulic pressure port extending through the hydraulic nut unibody to the first pressure area and adapted to be connected to an external pressure source

Abstract: A hoist assembly for raising and lowering a load uses a plurality of flat tensile members and spool drums. A modular hoist system can be adapted to various configurations by mounting a plurality of hoist assemblies in combination.

Abstract: Provided is a lifting device comprising: a hook or clip; secured to the hook or clip, one or more first pulleys; a second hook or clip; secured to the second hook or clip, (i) a release mechanism comprising a second pulley and a releasable lock for an engaged flexible serpentine article and, optionally, (ii) one or more third pulleys, the second and third pulleys collectively the beta pulleys; and the flexible serpentine article engaged, at a first end, to one or the other hook or clip, and serially engaged through the first pulleys and beta pulleys, to provide a nominal two-fold or greater mechanical advantage, wherein the other end of the serpentine article is last engaged, among above recited elements, by one of the first pulleys.

Abstract: A screw jack assembly (10) for a towed vehicle (100) has a spring housing (30) and a leg section (20) (which may be fitted with a castoring jockey wheel (120) or foot (130) in telescopic relationship, and a compression spring (40) is compressed so that the position of the spring housing (30) relative to weight indicating indicia (20) on the leg section (20) can indicate the tongue weight of the towed vehicle (100). By locking the spring housing (30) and leg section (20) together, a crank shaft (50) can move a main housing (80) relative to the leg section (20) to enable the assembly (60) to raise and lower the vehicle (100) in the manner of a conventional screw jack assembly.

Abstract: A modular fence system that eliminates the pervasive problem of a sagging bottom rail due to the cumulative weight of the pickets bearing downwardly thereon and that does so without additional labor or material costs. A double tongue and groove structure along the vertical edges of each of the fence pickets facilitates interlocking engagement between adjoining pickets that prevents sliding vertical movement therebetween. Thus, the weight of a panel of joined together vertical fence pickets bears only at the ends of the bottom rail, into which the panel of pickets is positioned, at its two points of attachment to adjacent posts.

Abstract: A fence may include a support member that is sized and configured to support a portion of the fence. The support member may also facilitate attachment of the fence to a fence post. For example, a clip may be used to connect the support member to the fence post. The clip may include an opening with a generally teardrop-shaped configuration and the end of the support member may be disposed within the opening. In particular, the opening in the clip may include a first section that is larger than an end of the support member to allow the support member to freely move relative to the clip, and a second section that is generally equal to or smaller than a portion of the support member to secure the support member and clip in a generally fixed position. This may allow the clip to be attached to the support member by a snap, friction or interference fit.

Abstract: A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.

Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.

Abstract: A nanometric device is disclosed for the measurement of the electrical conductivity of individual molecules and their quantum effects having: a substrate surmounted by, in order, a barrier to diffusion layer, an electrically conductive layer, a “bounder” layer and an electrically insulating layer; and a suitable miniaturized probe; wherein the “bounder” layer and the electrically insulating layer have at least one nanometric pore formed within, the base of which consists of the electrically conductive layer. A method for the production of a nanometric device for the measurement of the electrical conductivity of individual molecules and their quantum effects, and a method for the measurement of the electrical conductivity and quantum effects of a molecule of interest, are also disclosed.

Abstract: The present invention provides a low-voltage organic thin film transistor having a gate dielectric layer of ultra-thin metal oxide self-grown on a metal gate electrode by O2 plasma process. The metal gate electrode is deposited on a plastic or glass substrate. By directly oxidizing the gate electrode by using O2 plasma process, the gate dielectric layer of metal oxide is formed with a thickness of several nanometers on the gate electrode. The organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed on the organic semiconductor layer. Before the organic semiconductor layer is formed, an organic molecular monolayer may be formed on the gate dielectric layer by using molecular self-assembly technique. The gate dielectric layer may be formed at room temperature to about 100° C.

Abstract: An organic light emitting display and a manufacturing method thereof include an improved encapsulation layer. The encapsulation layer of the organic light emitting display includes an organic layer uniformly covering bank portions and light emitting areas on a substrate; and an inorganic layer formed thicker on the light emitting areas than on the bank portions. In the organic light emitting display, the inorganic layer is thick on the light emitting area in which a sealing ability is required and the bank portion is thin in order to provide flexibility. Therefore, the encapsulation layer can be formed more easily compared to an encapsulation layer on a device in which the organic layer and inorganic layer are alternately formed at least 10 times.

Abstract: Example embodiments of the present invention relate to an organic-inorganic hybrid polymer having capped terminal hydroxyl groups and an organic insulator composition including the hybrid polymer and methods thereof. The organic-inorganic hybrid polymer may be prepared by capping terminal hydroxyl groups of silanol moieties that do not participate in the formation of an intermolecular network in an organic-inorganic hybrid material, with an organosilane compound. The organic-inorganic hybrid polymer may increase the hysteresis and physical properties of an organic thin film transistor. The organic-inorganic hybrid polymer may be more effectively utilized in the manufacture of liquid crystal displays (LCDs).

Abstract: Provided are organic n-doped electron transport layers comprising at least one electron transport material and at least one electron rich dopant material and organic p-doped hole transport layers comprising at least one hole transport material and at least one electron deficient dopant material.

Abstract: It is an object to provide a semiconductor device capable of transmitting and receiving data with a reader/writer and reducing breakdown or interference due to static electricity. A semiconductor device includes a semiconductor integrated circuit, a conductive layer serving as an antenna that is connected to the semiconductor integrated circuit, and a substrate interposing the semiconductor integrated circuit and the conductive layer, where at least one of a layer forming the semiconductor integrated circuit, a layer covering the semiconductor integrated circuit, and the substrate is formed from a conductive polymer. In accordance with the above structure, wireless communication with a reader/writer is possible, and breakdown or malfunction in the semiconductor integrated circuit due to static electricity is reduced.

Abstract: There is provided an organic electroluminescence device that is high in light emitting efficiency and excellent in driving durability, which contains at least a light emitting layer between an anode and a cathode opposing each other, and further has either 1) an organic layer containing at least a first acceptor and a second acceptor between the light emitting layer and the anode, in which the first acceptor is a metal compound and the second acceptor is an organic compound which does not contain a metal, or 2) an organic layer containing a metal oxide as an acceptor between the light emitting layer and the anode, in which a concentration of the metal oxide in the organic layer is varied in a thickness direction and the concentration is lower in a portion near the light emitting layer than a portion near the anode.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: Disclosed herein is a transparent electrode featuring the interposition of a nano-metal layer between a grid electrode on a transparent substrate and an electroconductive polymer layer, and a preparation method thereof. The transparent electrode can be produced in a continuous process at high productivity and low cost and can be applied to various display devices.

Abstract: A display device includes a plurality of thin film transistors, a passivation layer formed on the thin film transistors, a pixel electrode formed on the passivation layer and including a rectangular shape and a contact region electrically connected with the thin film transistors, and a wall formed around the pixel electrode, a portion of the wall spaced from the pixel electrode. The contact region is formed along a side of the pixel electrode.

Abstract: A semiconductor device includes a conductive layer formed on a semiconductor substrate. An insulation layer is formed on the conductive layer and includes an opening defined therein that exposes the conductive layer. A semiconductor pattern is formed on the insulation layer and is electrically connected to the conductive layer through the opening. A transistor is formed on the semiconductor pattern.

Abstract: A display device according to the present invention comprises an insulating substrate; a switching thin film transistor formed on the insulating substrate for receiving a data voltage has a first semiconductor layer comprising amorphous silicon; a driving thin film transistor formed on the insulating substrate, having a control terminal connected with an output terminal of the switching thin film transistor and includes a second semiconductor layer comprising poly silicon; a light sensor formed on the insulating substrate and comprises a third semiconductor layer and a sensor input terminal and a sensor output terminal electrically connected with the third semiconductor layer; an insulating layer formed on the light sensor; a first electrode formed on the insulating layer and electrically connected with an output terminal of the driving thin film transistor; an organic layer formed on the first electrode and comprises a light emitting layer; a second electrode formed on the organic layer; and a controller whi

Abstract: A multi-level semiconductor device includes a first transistor on a semiconductor substrate, the first transistor including a first source/drain region, a semiconductor layer on the semiconductor substrate, a second transistor on the semiconductor layer, the second transistor including a second source/drain region in a first portion of the semiconductor layer, and a contact pattern extending from the first source/drain region and contacting a second portion of the semiconductor layer, wherein the second portion of the semiconductor layer has an impurity concentration that is greater than that of the second source/drain region.

Abstract: A semiconductor device has a plurality of interconnect layers each including a plurality of interconnect lines. The semiconductor device includes a dielectric film (HDP film) formed by means of high density plasma-enhanced CVD and including an edge formed on the side surface of the topmost-layer interconnect lines, a silicon oxide film formed by modifying a SOG film on the HDP film between adjacent two of the topmost-layer interconnect lines in the element forming region, and a passivation film formed to cover the HDP film and the topmost-layer interconnect lines.

Abstract: The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having the filled cavities therein can be utilized as a semiconductor-on-insulator-type structure, and transistor devices can be formed to be supported by the semiconductor material and to be over the cavities. In some aspects, the transistor devices have channel regions over the filled cavities, and in other aspects the transistor devices have source/drain regions over the filled cavities. The transistor devices can be incorporated into dynamic random access memory, and can be utilized in electronic systems.

Abstract: Disclosed herein is a display device, including a display element, a first scanning line, a second scanning line, a data signal line, a switching element having a first terminal and a second terminal of a first conduction type, the first terminal being connected to the data signal line, for being held in a conducting state or a non-conducting state according to a voltage applied to the first scanning line, and a storage capacitance having a first electrode and a second electrode that shares the second scanning line, wherein the second terminal of the switching element is connected to the display element and connected to the first electrode of the storage capacitance including a semiconductor film of a second conduction type different from the second terminal.

Abstract: A semiconductor device, includes: a first conductivity-semiconductor substrate; a hetero semiconductor region for forming a hetero junction with the first conductivity-semiconductor substrate; a gate electrode adjacent to a part of the hetero junction by way of a gate insulating film; a drain electrode connecting to the first conductivity-semiconductor substrate; a source electrode connecting to the hetero semiconductor region; and a second conductivity-semiconductor region formed on a part of a first face of the first conductivity-semiconductor substrate in such a configuration as to oppose the gate electrode via the gate insulating film, the gate insulating film, the hetero semiconductor region and the first conductivity-semiconductor substrate contacting each other to thereby form a triple contact point.

Abstract: In a stacked display device with light-emitting units composed of organic layers and stacked together, the use of a stable material in at least a portion of a charge generation layer makes it possible to achieve improvements in environmental stability and also to attain an improvement in the efficiency of injection of charges from the charge generation layer into the light-emitting units. The display device can be readily fabricated. In a display device (11) provided with a plurality of light-emitting units (14-1)(14-2), each of which includes at least an organic light-emitting layer (14c), stacked together between a cathode (16) and an anode (13), and also with a charge generation layer (15) held between the respective light-emitting units (14-1)(14-2), at least a portion of the charge generation layer (15) is composed of an oxide or fluoride which contains at least one of alkali metals and alkaline earth metals.

Abstract: A flip-chip light emitting device including: a substrate; an n-type semiconductor layer formed on a top surface of the substrate; an active layer formed on a top surface of the n-type semiconductor layer; a p-type semiconductor layer formed on a top surface of the active layer; a p-type electrode formed on a top surface of the p-type semiconductor layer; and an n-type electrode formed on an exposed portion of the top surface of the n-type semiconductor layer is provided. The p-type electrode includes: an ohmic contact layer formed with a predetermined width along an edge of the top surface of the p-type semiconductor layer near to the n-type electrode; and a reflective layer covering the ohmic contact layer and a portion of the top surface of the p-type semiconductor layer not covered by the ohmic contact layer.

Abstract: A semiconductor light emitting device comprises a semiconductor multilayer film including an active layer for generating light, a p electrode formed on the semiconductor multilayer film, and a plasmon generating layer, which are provided on a substrate. A portion of the semiconductor multilayer film including at least the active layer forms a plurality of rods. The plasmon generating layer (8) fills between each rod. The plasmon generating layer (8) is formed of a material having a negative dielectric constant at the wavelength of emitted light. The rods are arranged in a periodic manner.

Abstract: An object of the invention is to provide a technique for improving the characteristics of a TFT and realizing an optimum structure of the TFT for the driving conditions of a pixel section and a driving circuit by a small number of photo masks. Therefore, a light emitting device has a semiconductor film, a first electrode and a first insulating film nipped between the semiconductor film and the first electrode. Further, the light emitting device has a second electrode and a second insulating film nipped between the semiconductor film and the second electrode. The first and second electrodes are overlapped with each other through a channel forming area arranged in the semiconductor film. In the case of a TFT in which a reduction in off-electric current is considered important in comparison with an increase in on-electric current, a constant voltage (common voltage) is applied to the first electrode at any time.

Abstract: A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

Abstract: A spacer structure is provided between a first substrate formed with a phosphor screen and a second substrate provided with a plurality of electron emission sources. A supporting substrate of the spacer structure has a first surface opposed to the first substrate, a second surface opposed to the second substrate, and a plurality of electron beam apertures opposed to the electron emission sources. A plurality of spacers are set up on the second surface. The supporting substrate has a plurality of height reducing portions which are individually in contact with the spacers and elastically deformable in the height direction of the spacers. Each of the height reducing portions has a recess formed in the first surface so as to face the spacer and a plurality of grooves formed on the second surface and situated around the spacer.

Abstract: An image display device includes a plurality of spacers which are arranged between a first substrate formed with a phosphor screen and a second substrate provided with a plurality of electron emission sources and support an atmospheric load acting on the first substrate and the second substrate. The plurality of spacers are located in a manner that a plurality of spacer columns, each column include the plurality of spacers arranged side by side with gaps therebetween in a first direction, are arranged side by side with gaps therebetween in a second direction, the first direction being a direction parallel to one side of the first substrate, the second direction being a direction perpendicular to the first direction. The plurality of spacers which constitute each spacer column are located staggered in the first direction with respect to the plurality of spacers which constitute adjacent other spacer column.