Patents Issued in September 20, 2007
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Publication number: 20070215840Abstract: A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in the grain boundaries of aluminum nitride (AlN) particles, thereby reducing temperature dependency of volume resistivity of AlN sintered body; at the same time, the solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving in AlN particles, thereby maintaining the volume resistivity within AlN particles at a high value even at a high temperature.Type: ApplicationFiled: March 14, 2007Publication date: September 20, 2007Applicant: NGK Insulators, Ltd.Inventors: Jun Yoshikawa, Yoshimasa Kobayashi, Naohito Yamada
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Publication number: 20070215841Abstract: The invention relates to a carbon nanotube composite material, to methods of its production and to uses of such composite material.Type: ApplicationFiled: May 13, 2005Publication date: September 20, 2007Applicant: SonyDeutschland GmbHInventors: William Ford, Jurina Wessels, Akio Yasuda, Jack Barger
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Publication number: 20070215842Abstract: An aqueous seeding solution of palladium acetate, acetic acid and chloride.Type: ApplicationFiled: May 22, 2007Publication date: September 20, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Darryl Restaino, Donald Canaperi, Judith Rubino, Sean Smith, Richard Henry, James Fluegel, Mahadevaiyer Krishnan
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Publication number: 20070215843Abstract: The invention provides simplified negative index materials (NIMs) using wire-pair structures, 4-gap single ring split-ring resonator (SRR), fishnet structures and overleaf capacitor SRR. In the wire-pair arrangement, a pair of short parallel wires and continuous wires are used. In the 4-gap single-ring SRR, the SRRs are centered on the faces of a cubic unit cell combined with a continuous wire type resonator. Combining both elements creates a frequency band where the metamaterial is transparent with simultaneously negative ? and ?. In the fishnet structure, a metallic mesh on both sides of the dielectric spacer is used. The overleaf capacitor SRR changes the gap capacities to small plate capacitors by making the sections of the SRR ring overlap at the gaps separated by a thin dielectric film. This technique is applicable to conventional SRR gaps but it best deploys for the 4-gap single-ring structures.Type: ApplicationFiled: November 14, 2006Publication date: September 20, 2007Applicant: IOWA STATE UNIVERSITY RESEARCH FOUNDATIONInventors: Costas Soukoulis, Jiangfeng Zhou, Thomas Koschny, Lei Zhang, Gary Tuttle
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Publication number: 20070215844Abstract: A chromene compound of this invention, as shown in the following formula: characterized by having an indeno(2,1-f)naphtho(1,2-b)pyran structure as a basic structure, and having a substituent which is a substituted or unsubstituted aryl group such as methoxyphenyl group, or a substituted or unsubstituted heteroaryl group such as thienyl group bonding to a carbon atom at the seventh position of the indeno(2,1-f)naphtho(1,2-b)pyran structure. The photochromic compound exhibits a color tone of a neutral tint when it develops a color, features a high color-developing sensitivity and a high fading rate, and has a good photochromic resistance.Type: ApplicationFiled: September 14, 2004Publication date: September 20, 2007Applicant: Tokuyama CorporationInventors: Junji Momoda, Yuichiro Kawabata, Nobuyuki Tanaka, Arihiro Iwata
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Publication number: 20070215845Abstract: The present invention provides an optical film, which is excellent in ultraviolet absorption capability at 380 nm with little bleed-out, comprising a resin containing a triazine compound represented by the following general formula (I). (In the formula, R1-R6 may be a hydrogen atom; hydroxyl group; or an organic group selected from among an alkyl group, alkoxy group, dialkyl amino group, alkyl carbonyloxy group, aryl group, arylated alkyl group, aryloxy group, arylated alkyloxy group and an aryl carbonyloxy group having 18 or less carbon atoms, independently. However, the alkyl part of these organic groups may be substituted by a hydroxyl group, halogen atom, cyano group or nitro group, interrupted by an oxygen atom, sulfur atom, carbonyl group, ester group, amide group or imino group, or have a double bond, and these substitutions, interruptions and double bonds may be combined).Type: ApplicationFiled: April 26, 2005Publication date: September 20, 2007Inventors: Yoshinori Negishi, Shinichi Ishikawa, Etsuo Tobita, Takashi Ayabe
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ULTRAVIOLET-TRANSPARENT ALKANES AND PROCESSES USING SAME IN VACUUM AND DEEP ULTRAVIOLET APPLICATIONS
Publication number: 20070215846Abstract: The present invention is drawn to the use of alkanes that are highly transparent to UV wavelengths ranging from about 170 nm to 260 nm in optical couplants, optical cements, optical elements, optical inspection media for semiconductor wafers and devices, and immersion photolithography, particularly at 193 and 248 nm exposure wavelength.Type: ApplicationFiled: March 15, 2007Publication date: September 20, 2007Applicant: E. I. DUPONT DE NEMOURS AND COMPANYInventors: Roger French, Sheng Peng, Weiming Qiu, Robert Wheland -
Publication number: 20070215847Abstract: The present invention provides a flame retardant synthetic fiber, which is flame retardant by enhancing carbonization and shape retention in combustion by the use of an additive while retaining self-distinguishing property and which is favorably used for bedclothes and furniture necessary to have high flame retardancy, a flame retardant fiber composite containing the flame retardant synthetic fiber, and an upholstered furniture product using the flame retardant fiber composite. A flame retardant synthetic fiber obtained by spinning a composition containing 4 to 50 parts by weight of a glass component having a glass transition temperature of at most 400° C. based on 100 parts by weight of a polymer containing 17 to 70% by weight of a halogen atom.Type: ApplicationFiled: April 25, 2005Publication date: September 20, 2007Applicant: KANEKA CORPORATIONInventors: Kouichi Nishiura, Wataru Mio, Toshiaki Ebisu, Masanobu Tamura, Masahiko Mihoichi, Yoshitomo Matsumoto, Shigeru Maruyama
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Publication number: 20070215848Abstract: A tightening device leverage tool includes a bar member with a bar axis; a first receiver mounted to the bar member, and a second receiver mounted to the bar member and spaced-apart along the bar axis from the first receiver. The first and the second receivers are simultaneously engageable with a respective one of a first ratchet buckle member and a second ratchet buckle member, spaced apart from one another, for pivoting at least one of the first and the second ratchet buckle members about a pivot axis.Type: ApplicationFiled: August 15, 2006Publication date: September 20, 2007Inventors: Sylvain Gaudreault, Jules Savard
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Publication number: 20070215849Abstract: A guardrail safety system includes a guardrail beam operable to contain and redirect an errant vehicle to prevent the vehicle from leaving a roadway. At least a portion of the guardrail beam includes a thrie beam. A support post is coupled to the guardrail beam and includes a lower portion, a mid portion, and an upper portion. The lower portion is installed below grade adjacent the roadway. The mid portion lies substantially adjacent the grade and is weakened about a first axis without being substantially weakened about a second axis that is generally perpendicular to the first axis. An upper portion is releasably coupled to the guardrail beam such that the upper portion is uncoupled from the guardrail beam when the mid portion yields about the first axis.Type: ApplicationFiled: February 28, 2007Publication date: September 20, 2007Inventors: Dean C. Alberson, Roger P. Bligh, D. Lance Bullard, C. Eugene Buth
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Publication number: 20070215850Abstract: A fence system for following the contour of a surface is provided. The system includes a plurality of generally cylindrically shaped slats each having at least one groove and at least one protrusion. The protrusions of each slat is insertable into the grooves of adjacent slats. The slats are movable upwardly and downwardly relative to one another to follow the contour of a surface.Type: ApplicationFiled: February 27, 2007Publication date: September 20, 2007Inventor: Maxwell R. Mitchell
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Publication number: 20070215851Abstract: A solid barrier, sound partition and privacy fence system including a plurality of interconnected fence panels whose ends are adapted to fit to pre-existing fence posts. The ends of the fence panels include attachment structure for releasably securing adjacent fence panels to one another around an existing fence post. The privacy fence system provides for installing a privacy fence that reuses existing cement anchored fence posts. The attachment structure may comprise either an interlocking fastening device or a threaded fastening device. The privacy fence may also include an optional fence post cap that is attached to the top portion of the existing poles. Each fence panel is constructed of a lightweight, one piece, molded material.Type: ApplicationFiled: May 14, 2007Publication date: September 20, 2007Inventor: Michael Wall
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Publication number: 20070215852Abstract: A method for manufacturing a memory cell device includes forming a bottom electrode comprising a pipe-shaped member, a top, a bottom and sidewalls having thickness in a dimension orthogonal to the axis of the pipe-shaped member, and having a ring-shaped top surface. A disc shaped member is formed on the bottom of the pipe-shaped member having a thickness in a dimension coaxial with the pipe-shaped member that is not dependent on the thickness of the sidewalls of the pipe-shaped member. A layer of phase change material is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistive material. An integrated circuit including an array of such memory cells is described.Type: ApplicationFiled: March 15, 2006Publication date: September 20, 2007Applicant: Macronix International Co., Ltd.Inventor: Hsiang-Lan Lung
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Publication number: 20070215853Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.Type: ApplicationFiled: January 26, 2007Publication date: September 20, 2007Inventors: Jeong-Hee Park, Ju-Chul Park, Jun-Soo Bae, Bong-Jin Kuh, Yong-Ho Ha
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Publication number: 20070215854Abstract: Light emitting device arrays comprising alternate current routes that redirect supplied current in the event of open circuit due to a damaged light emitting element are provided. Furthermore, passive light emitting device arrays that provide current compensation for lost light output are provided.Type: ApplicationFiled: March 4, 2007Publication date: September 20, 2007Inventors: CHEN-JEAN CHOU, CHEN-SHING CHOU
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Publication number: 20070215855Abstract: A wavelength-tunable light emitting device. A resilient support substrate is provided, and a light emitting diode is formed on an area of the support substrate. The light emitting diode includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer formed in their order. Pressure is applied to the active layer by bending the support substrate, thereby changing the energy band gap of the active layer.Type: ApplicationFiled: March 15, 2007Publication date: September 20, 2007Inventor: Hyung Dong Kang
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Publication number: 20070215856Abstract: A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.Type: ApplicationFiled: December 18, 2006Publication date: September 20, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soon-jae KWON, Byoung-lyong CHOI, Kyung-sang CHO, Byung-ki KIM
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Publication number: 20070215857Abstract: A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level of the conduction band of quantum dots in this way accelerates the relaxation process of electrons from an excited level to the ground level in the conduction band.Type: ApplicationFiled: December 18, 2006Publication date: September 20, 2007Applicant: NEC CORPORATIONInventor: Hideaki Saito
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Publication number: 20070215858Abstract: A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor layer formed between one first conductive type contact layer and a first quantum dot layer which is closest to the one first conductive type contact layer so that it results in a barrier against a carrier positioned at the one first conductive contact layer.Type: ApplicationFiled: June 14, 2006Publication date: September 20, 2007Applicant: FUJITSU LIMITEDInventors: Yasuhito Uchiyama, Hironori Nishino
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Publication number: 20070215859Abstract: A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thicknesses. Shallow trenches are subsequently fabricated through the epitaxial layers, so that the strain energy is redistributed such that the compressive strain in the SiGe layer is partially relaxed elastically and a degree of tensile strain is induced to the neighboring layers of silicon. Because this process for inducing tensile strain in a silicon over-layer is elastic in nature, the desired strain may be achieved without formation of misfit dislocations.Type: ApplicationFiled: March 17, 2006Publication date: September 20, 2007Inventor: Paul Clifton
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Publication number: 20070215860Abstract: An infrared photodetector that is capable of efficiently detecting single photon over an extensive range of wavelengths from several ?m to several hundreds of ?m and is suitable for arraying, and wherein an oscillatory electric field of a single infrared photon (37) parallel to a plane of the patch section (36) of a microstrip antenna when the photon is incident to cause the latter to resonate therewith is converted to an oscillatory electric field (38z) in a z direction, which an electron (39) in a quantum dot (24a) in its base state subband (30) is allowed to absorb, thereby being excited to a first excitation state subband (31) to tunnel through a potential barrier (32) and set free to escape into a quantum well (26) in a ?z direction where it is absorbed. An electric field by ionization of the quantum dot (24a) as a result of escape of the electron (39) causes change in conductance of a point contact (26e).Type: ApplicationFiled: July 6, 2005Publication date: September 20, 2007Applicant: JAPAN SCIENCE AND TECHNOLOGYInventors: Susumu Komiyama, Zhenghua An, Jeng-Chung Cheng
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Publication number: 20070215861Abstract: A molecular-based switching device and method for controlling charge transport across a molecule. The molecular-based switching device includes a molecule having first and second nodes in between which destructive quantum interference restricts electrical conduction from the first node to the second node in an off-state, a first electrode connected to the first node and configured to supply charge carriers to the first node, a second electrode connected to the second node and configured to remove the charge carriers from the second node, and a control element configured to reduce coherence in or alter charge transport paths between the first and second nodes so as to reduce existing destructive quantum interference and permit flow of the charge carriers from the first node to the second node.Type: ApplicationFiled: March 20, 2007Publication date: September 20, 2007Applicant: Arizona Bd of Regents/Behalf of Univ. of ArizonaInventors: Charles Stafford, David Cardamone, Sumitendra Mazumdar
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Publication number: 20070215862Abstract: Various embodiments of the present invention are directed to methods for generating an entangled state of qubits. In one embodiment of the present invention, a method for preparing an entangled state of qubits comprises providing a probe and N non-interacting qubits, each qubit comprises a linear superposition of two basis states. The probe is transmitted into an interaction region that separately couples the probe to each of the qubits and produces a number of different probes. A linear superposition of states is output from the interaction region, each state in the linear superposition of states comprises a tensor product of entangled basis states and one of the different probes. The linear superposition of states is projected into one of the entangled states by measuring the state of the probe.Type: ApplicationFiled: January 30, 2006Publication date: September 20, 2007Inventors: Raymond Beausoleil, William Munro, Timothy Spillar, Pieter Kok, Sean Barrett, Kae Nemoto
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Publication number: 20070215863Abstract: A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.Type: ApplicationFiled: March 15, 2006Publication date: September 20, 2007Applicants: Lucent Technologies Inc., Columbia UniversityInventors: Christian Kloc, Oleg Mitrofanov, Theo Siegrist, John Wikberg, David Lang
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Publication number: 20070215864Abstract: Pi-conjugated organoboron polymers for use in thin-film organic polymer electronic devices. The polymers contain aromatic and or unsaturated repeat units and boron atoms. The vacant p-orbital of the boron atoms conjugate with the pi-conjugated orbital system of the aromatic or unsaturated monomer units extending the pi-conjugation length of the polymer across the boron atoms. The pi-conjugated organoboron polymers are electron-deficient and, therefore, exhibit n-type semiconducting properties, photoluminescence, and electroluminescence.Type: ApplicationFiled: March 17, 2006Publication date: September 20, 2007Inventors: Silvia Luebben, Shawn Sapp
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Publication number: 20070215865Abstract: Described herein is an organic opto-electronic device comprising a cathode comprising at least one zero-valent metal; an anode; an opto-electronically active organic material; wherein said cathode is in contact with at least one organic phosphonium salt. In certain embodiments, the organic phosphonium salt has structure (I) wherein R1-R4 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 cycloaliphatic radical, or a C3-C20 aromatic radical is disclosed and wherein X? is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.Type: ApplicationFiled: March 20, 2006Publication date: September 20, 2007Applicant: General Electric CompanyInventors: Jie Liu, James Cella, Larry Lewis, Anil Duggal, James Spivack, Qing Ye
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Publication number: 20070215866Abstract: Aromatic and heteroaromatic molecular structures with controllable electron conducting properties are derived from the incorporation of electron active substituents in selective positions. Such compounds can form self-assembled layers on metal or other substrates, and can be used in molecular scaled opto-electronic devices including field-effect transistors, light-emitting diodes and photovoltaic cells.Type: ApplicationFiled: March 20, 2006Publication date: September 20, 2007Inventors: Ross Getty, Simona Percec
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Publication number: 20070215867Abstract: It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R1 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or a group represented by General Formula 2. Each of R2 and R3 is either hydrogen or an alkyl group having 1 to 4 carbon atoms and may be identical or different. R4 is an aryl group having 6 to 15 carbon atoms. Each of R5 and R6 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 15 carbon atoms and may be identical or different.Type: ApplicationFiled: September 26, 2006Publication date: September 20, 2007Inventors: Sachiko Kawakami, Harue Nakashima
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Publication number: 20070215868Abstract: A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.Type: ApplicationFiled: December 1, 2006Publication date: September 20, 2007Inventors: Stephen Forrest, Fan Yang, Barry Rand
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Publication number: 20070215869Abstract: It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.Type: ApplicationFiled: December 1, 2005Publication date: September 20, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshitaka Moriya, Hiroko Abe, Mikio Yukawa, Ryoji Nomura
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Publication number: 20070215870Abstract: An Organic Light Emitting Display (OLED) includes: a substrate having defined pixel region and non-pixel regions and including an organic light emitting element arranged in the pixel region; a driver IC arranged in the non-pixel region of the substrate and adapted to supply a signal to the organic light emitting element; a sealant arranged on the non-pixel region of the substrate; a metal cap spaced away from the substrate and affixed with the sealant to a position corresponding to the substrate; a ground wire electrically connecting the driver IC to the metal cap; a conductive paste arranged between the metal cap and the ground wire; and a printed circuit board arranged to correspond to one side of the metal cap.Type: ApplicationFiled: October 18, 2006Publication date: September 20, 2007Inventor: Wi Jin Nam
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Publication number: 20070215871Abstract: An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film, formed on the first insulation film, while covering a part of the first insulation film; a second insulation film formed on the first insulation film, while covering the semiconductor film and contacting the same side of the substrate via the aperture; a capacitor electrode, formed on the aperture, while sandwiching the second insulation film so as to face the substrate; a gate electrode formed on the semiconductor film, so as to sandwich the second insulation film; and an organic electroluminescence element, formed on the second insulation film, electrically connected to the semiconductor film.Type: ApplicationFiled: March 1, 2007Publication date: September 20, 2007Applicant: SEIKO EPSON CORPORATIONInventors: Masayoshi Todorokihara, Kazuyuki Miyashita
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Publication number: 20070215872Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.Type: ApplicationFiled: March 20, 2007Publication date: September 20, 2007Inventors: Masayuki Chikamatsu, Atsushi Itakura, Tatsumi Kimura, Satoru Shimada, Yuji Yoshida, Reiko Azumi, Kiyoshi Yase
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Publication number: 20070215873Abstract: A semiconductor device includes a semiconductor region wherein the semiconductor region is a forced or non-forced Near Natural breakdown region, which is completely depleted when a predetermined voltage having a magnitude less than or equal to the breakdown voltage of a non-Natural breakdown (for example, Zener breakdown and Avalanche breakdown) is applied across the device.Type: ApplicationFiled: June 4, 2006Publication date: September 20, 2007Inventors: Guy Silver, Juinerong Wu
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Publication number: 20070215874Abstract: An integrated circuit and method for fabrication includes first and second structures, each including a set of sub-lithographic lines, and contact landing segments connected to at least one of the sub-lithographic lines at an end portion. The first and second structures are nested such that the sub-lithographic lines are disposed in a parallel manner within a width, and the contact landing segments of the first structure are disposed on an opposite side of a length of the sub-lithographic lines relative to the contact landing segments of the second structure. The contact landing segments for the first and second structures are included within the width dimension, wherein the width includes a dimension four times a minimum feature size achievable by lithography.Type: ApplicationFiled: March 17, 2006Publication date: September 20, 2007Inventors: Toshiharu Furukawa, Mark Hakey, Steven Holmes, David Horak, Charles Koburger, Chung Lam
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Publication number: 20070215875Abstract: A semiconductor device includes a substrate, first, second, and third gate lines disposed over the substrate, the first and second gate lines defining a first trench with a first aspect ratio, the second and third gate lines defining a second trench with a second aspect ratio, a first insulating layer formed to decrease the first and second aspect ratios, and a second insulating layer disposed over the first insulating layer to fill the first and second trenches.Type: ApplicationFiled: December 28, 2006Publication date: September 20, 2007Applicant: Hynix Semiconductor Inc.Inventors: Sang-Yeop Han, Se-Ra Won
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Publication number: 20070215876Abstract: A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.Type: ApplicationFiled: March 15, 2007Publication date: September 20, 2007Inventors: Jae-Kyeong Lee, Kwan-Tack Lim
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Publication number: 20070215877Abstract: According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.Type: ApplicationFiled: March 16, 2007Publication date: September 20, 2007Inventors: Tomoya Kato, Masakiyo Matsumura
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Publication number: 20070215878Abstract: A light emitting device includes: a substrate; a current diffusion layer; and a light emitting structure sandwiched between the substrate and the current diffusion layer, and including a plurality of light emitting protrusions extending between the substrate and the current diffusion layer, a plurality of interconnected spaces disposed among and separating the light emitting protrusions from each other, and a dielectric material filling the spaces. Each of the light emitting protrusions includes first and second cladding layers and a light-emitting active layer sandwiched between the first and second cladding layers.Type: ApplicationFiled: March 17, 2006Publication date: September 20, 2007Inventors: Dong-Sing Wuu, Ray-Hua Horng
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Publication number: 20070215879Abstract: Described herein is an organic opto-electronic device comprising a cathode comprising at least one zero-valent metal; an anode; an opto-electronically active organic material; wherein said cathode is in contact with at least one organic ammonium salt. In certain embodiments, the organic ammonium salt has structure (I) wherein R1-R4 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 cycloaliphatic radical, or a C3-C20 aromatic radical is disclosed and wherein X+ is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.Type: ApplicationFiled: March 20, 2006Publication date: September 20, 2007Applicant: General Electric CompanyInventors: Jie Liu, James Cella, Larry Lewis, Anil Duggal, James Spivack, Qing Ye
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Publication number: 20070215880Abstract: The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided in which a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104 and a second electrode 105 are provided over a first electrode 101, the light emitting layer 103 includes an inorganic compound that is any of a sulfide, a nitride and an oxide as a base material; at least one element selected from the group consisting of copper, silver, aluminum, fluorine and chlorine, as a luminescent center material; manganese; and either gallium phosphide or gallium antimonide.Type: ApplicationFiled: February 27, 2007Publication date: September 20, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Junichiro SAKATA, Yoshiaki YAMAMOTO, Takahiro KAWAKAMI, Tomoya AOYAMA
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Publication number: 20070215881Abstract: It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.Type: ApplicationFiled: February 28, 2007Publication date: September 20, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yoshiaki YAMAMOTO, Yoshiharu HIRAKATA, Junichiro SAKATA, Hiroki OHARA
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Publication number: 20070215882Abstract: A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.Type: ApplicationFiled: March 2, 2007Publication date: September 20, 2007Inventor: Hyo Kun Son
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Publication number: 20070215883Abstract: Electroluminescent devices, subassemblies for use in making electroluminescent devices, and dielectric materials, conductive inks and substrates for use in making such subassemblies. One such electroluminescent device includes a first subassembly having an emitter layer for emitting light upon the application of an electric field and a first conductive layer adjacent a first side of the emitter layer and being substantially transparent. Such a device also includes a second subassembly having a second conductive layer and a patterned dielectric layer printed adjacent the second conductive layer. At least one of the conductive layers is formed in a pattern. The first subassembly and the second subassembly are joined to provide a circuit capable of causing electroluminescence by the emitter layer in a pattern defined, at least in part, by the pattern of at least one of the conductive layers and the patterned dielectric layer.Type: ApplicationFiled: March 20, 2006Publication date: September 20, 2007Inventors: Michael Dixon, Jeanne Saldanha
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Publication number: 20070215884Abstract: A light board is made with a receptacle substrate for holding cassette light units. The convenience of assembly and disassembly of the light units from the receptacle substrate makes the product easily to be maintained for changing different color light units, changing different displaying patterns, and removing or replacing a failure light unit.Type: ApplicationFiled: July 20, 2006Publication date: September 20, 2007Inventor: Jiahn-Chang WU
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Publication number: 20070215885Abstract: A semiconductor device having small leakage current and high breakdown voltage during reverse blocking, small on-state resistance and large output current at forward conduction, short reverse recovery time at shutoff, and high peak surge current value is provided. An n-type layer is made of a group-III nitride, and a p-type layer is made of a group-IV semiconductor material having a smaller band gap than the group-III nitride. The energy level at the top of the valence band of the n-type layer is lower than the energy level at the top of the valence band of the p-type layer, so that a P—N junction semiconductor device satisfying the above requirements is obtained. Further, a combined structure of P—N junction and Schottky junction by additionally providing an anode electrode to be in Schottky contact with the n-type layer also achieves the effect of decreasing voltage at the rising edge of current resulting from the Schottky junction.Type: ApplicationFiled: March 14, 2007Publication date: September 20, 2007Applicant: NGK Insulators, Ltd.Inventors: Makoto MIYOSHI, Yoshitaka Kuraoka
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Publication number: 20070215886Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.Type: ApplicationFiled: March 28, 2005Publication date: September 20, 2007Inventors: Ryouichi Takeuchi, Wataru Nabekura, Takashi Udagawa
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Publication number: 20070215887Abstract: There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 104 cm?1, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.Type: ApplicationFiled: October 26, 2006Publication date: September 20, 2007Applicant: General Electric CompanyInventors: Mark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Peter Micah Sandvik
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Publication number: 20070215888Abstract: A light-emitting device includes a plurality of pixels, a temperature-detection pixel, a temperature detector, an applied-current calculator, and a current applying unit disposed on a substrate. The pixels include display light-emitting elements for displaying information. The temperature-detection pixel is provided within a display area where the pixels are disposed and includes a temperature-detection light-emitting element for temperature detection, which is shielded by a light shielding layer and includes the same organic layer as that included in each display light-emitting element. The temperature detector detects a current value of the temperature-detection light-emitting element so as to detect the temperature thereof. The applied-current calculator calculates an electric current to be applied to the display light-emitting elements in accordance with the detected temperature so that the display light-emitting elements emit light with a predetermined luminance.Type: ApplicationFiled: March 12, 2007Publication date: September 20, 2007Applicant: SEIKO EPSON CORPORATIONInventor: Etsuo MITSUHASHI
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Publication number: 20070215889Abstract: An object of the present invention is to provide a novel aromatic amine compound, and a light-emitting element, a light-emitting device, and an electronic appliance with high luminous efficiency. An aromatic amine compound expressed by General Formula (1) and a light-emitting element, a light-emitting device, and an electronic appliance formed using the aromatic amine compound expressed by General Formula (1) are provided. By the use of the aromatic amine compound expressed by General Formula (1), the light-emitting element, the light-emitting device, and the electronic appliance can have high luminous efficiency.Type: ApplicationFiled: March 14, 2007Publication date: September 20, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Sachiko Kawakami, Nobuharu Ohsawa, Harue Nakashima, Satoko Shitagaki