Abstract: A dispersive, diffraction grating, NIR spectrometer that automatically calibrates the wavelength scale of the instrument without the need for external wavelength calibration materials is shown. The device shows: 1) a low power He—Ne laser at right angles to the source beam of the spectrometer; 2) a folding mirror to redirect the collimated laser beam so that it is parallel to the source beam; 3) the tendency of diffraction gratings to produce overlapping spectra of higher orders; 4) a “polka dot” beam splitter to redirect the majority of the laser beam toward the reference detector; 5) PbS detectors and 6) a software routine written in Lab VIEW that automatically corrects the wavelength scale of the instrument from the positions of the 632.8 nm laser line in the spectrum.

Abstract: A method for determining a location of IR-cut filter film on a substrate, the filter film and the substrate cooperatively functioning as an IR-cut filter, includes the steps of: providing an infrared laser device, an IR-cut filter and an infrared laser sensor; emitting a laser from the IR laser device to a surface of the IR-cut filter in a manner such that the laser beam is obliquely incident on an edge portion of the IR-cut filter; and determining the location of the filter film on the substrate of the IR-cut filter in such a way that, if the intensity of the laser beam received by the infrared sensor is equal to or close to zero, the location of the filter film is on a surface of the substrate facing towards the infrared laser device; if the intensity of the laser beam received by the infrared sensor is the same as or close to an intensity of the laser beam emitted from the infrared laser device, the location of the filter film is on a surface of the substrate facing away from the infrared sensor.

Abstract: A computer-implemented method for automated thermal computed tomography includes providing an input of heat, for example, with a flash lamp, onto the surface of a sample. The amount of heat and the temperature rise necessary are dependent on the thermal conductivity and the thickness of the sample being inspected. An infrared camera takes a rapid series of thermal images of the surface of the article, at a selected rate, which can vary from 100 to 2000 frames per second. Each infrared frame tracks the thermal energy as it passes from the surface through the material. Once the infrared data is collected, a data acquisition and control computer processes the collected infrared data to form a three-dimensional (3D) thermal effusivity image.

Abstract: A method of processing postal articles in which a physical magnitude is measured in order to detect (2) whether the outside surface of a postal article is made of a plastics material, and in which a digital image of said outside surface of the postal article is processed in order to detect (3) whether said surface has a noisy background. On the basis of the results of these two detection operations, it is determined (4) whether the outside surface of said postal article is a printable surface or a non-printable surface.

Abstract: A system for detecting and graphically displaying a contents of a fast-moving target object comprises: a radiation source, having a position such that at least a portion of radiation emitted from the radiation source passes through the fast-moving target object, the fast-moving target object having a variable velocity and acceleration while maintaining a substantially constant distance from the radiation source and being selected from the group consisting of: a vehicle, a cargo container and a railroad car; a velocity measuring device configured to measure the variable velocity of the fast-moving target object; a detector array comprising a plurality of photon detectors, having a position such that at least some of the at least a portion of the radiation passing through the target object is received thereby, the detector array having a variable count time according to the variable velocity and a grid unit size; a counter circuit coupled to the detector array for discretely counting a number of photons enterin

Abstract: The present invention concerns scintillators comprising a composition having the formula LuxY(1?x)Xa3, wherein Xa is a halide, and a dopant. The LuxY(1?x)Xa3 and dopant material has surprisingly good characteristics including high light output, high gamma-ray stopping efficiency, fast response, low cost, and minimal afterglow, thereby making the material useful for various applications including, for example, gamma-ray spectroscopy, medical imaging, nuclear and high energy physics research, diffraction, non-destructive testing, nuclear treaty verification and safeguards, geological exploration, and the like. The timing resolution of the scintillators of the present invention also provides compositions suitable for use in imaging applications, such as positron emission tomography (e.g., time-of-flight PET) and CT imaging.

Abstract: A patient movement system is used to detect movement of the patient in multiple of different coordinates. The movement of the patient is obtained in real-time and correlated to times of medical images, and used to compensate those medical images for the actual patient movement. This can be used in place of post processing algorithms which do not have actual medical information.

Abstract: A PET system includes an improved image reconstruction algorithm based on an improved modeling of the point-spread function. PET time of flight data is used to obtain a mean emitting point and a time of flight probability function. This information is then used to model the point-spread function. The time of flight probability function and the detector response function are used to define a probability volume for a given line of response, which is then used in the reconstruction of the image.

Abstract: The Low-energy Imaging Particle Spectrometer (LIPS) is configured as a “pinhole camera” with particle-specific scintillator focal planes. The scintillators are designed specifically to respond only to either protons or electrons within a specific energy range. The scintillators are coupled directly to a multi-anode photomultiplier tube (PMT). Owing to their particle-specific response, the scintillators themselves provide the particle discrimination. The pulse amplitude defines the particle energy and the spatial position provides angular information.

Abstract: A radiographic imaging system includes: a plurality of states of operation, a radiographic image detection device that detects irradiated radiation to obtain radiographic image information, a console capable of communicating with the radiographic image detection device, a status memory which stores the information of operation concerning the state of operation after end of charging or replacing the battery; and the radiographic image detection device includes: power supply source having a rechargeable or replaceable battery to supply power to a plurality of units driven by the power, a control unit that stores in the status memory the information of operation, before the end of charging or replacing the battery, and then after the end of charging or replacing of the battery, controls the state of operation of the units driven by the power in response to the information of operation stored in the status memory.

Abstract: The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens array comprising a plurality of lenses, wherein said lens array is located between said charged particle source and said converging means. In this way, it is possible to reduce aberrations of the converging means.

Abstract: A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so that a front surface of the cathode will be positioned outward from the inner wall surface. In the cathode holder is provided a tubular first heat shield surrounding the cathode with a space provided between the first heat shield and the cathode, the tip of the first heat shield positioned outward from the inner wall surface. At a rear side of the cathode is provided a filament. The gap between the cathode holder and the plasma generating chamber is filled with an electrical insulating material.

Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields.

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract: A device for operating gas in the vacuum or low-pressure environment and for observation of the operation includes a housing. The housing has a thinner part formed at a side thereof, and at least one spacer mounted therein for partitioning off its inside into a gas chamber and at least one buffer chamber outside the gas chamber. The gas chamber has two inner apertures provided on the spacers above and below the gas chamber. The housing has two outer apertures provided respectively on a top side thereof and a bottom side thereof. All of the inner and outer apertures are coaxial with one another and located on the thinner part. The housing has a pumping port for communication with the buffer chamber, and a gas inlet for communication with the gas chamber.

Abstract: Apparatus for introducing a medicament into containers, especially vials, in which the containers are passed through an enclosure and exposed therein to a sterilising electron beam. The containers are then conveyed to a filling station situated outside the enclosure at which a wall part of the container is punctured with a filling needle and medicament introduced into the container via the needle then withdrawing the needle. Preferred apparatus also includes means for heat sealing the puncture site. A corresponding process is disclosed.

Abstract: A scanning fluorescent microscope includes a light source which irradiates a sample with an exciting light pulse, and a splitter which splits fluorescent photons emitted from the sample excited by the exciting light pulse, in at least first and second groups. The scanning fluorescent microscope also includes first and second detectors which detect the fluorescent photons of the first and second group, respectively, first and second counters which count numbers of fluorescent photons detected by the detectors, respectively, first and second correcting units which perform a predetermined correction to the numbers of fluorescent photons, an adder adding the numbers of fluorescent photons corrected, and an operating unit which calculates a florescent lifetime based on resulting numbers from the adder.

Abstract: A filter system for filtering debris particles out of a predetermined cross-section of the radiation emitted by a radiation source of a lithographic apparatus includes a first set of foils and a second set of foils for trapping the debris particles, and a first heat sink and a second heat sink. Each foil of the first set is thermally connected to the first heat sink, and each foil of the second set is thermally connected to the second heat sink, so that heat is conducted substantially towards the first heat sink through each foil of the first set, and heat is conducted substantially towards the second heat sink through each foil of the second set. The first set extend substantially in a first section of the predetermined cross-section, and the second set extend substantially in a second section of the predetermined cross-section. The first and second sections are substantially non-overlapping.

Abstract: An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.

Abstract: Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time for beam tuning to be minimized. The ion implantation apparatus further includes a manipulator for extracting and focusing an ion source and an ion beam, a control block for controlling overall operation of the ion implantation apparatus and recognizing a newly installed manipulator, and a control window on which a selection menu is displayed, allowing recipe data to be selected on a screen. When installing a replacement manipulator, recipe data for the replacement manipulator can be selected to improve beam tuning set up time.

Abstract: An adjusting device of an apparatus for generating a beam of charged particles, wherein said beam is for interacting with a target and wherein said adjusting device comprises interface means for receiving, from a user of the apparatus, a set of desired values of characteristics of the beam of charged particles; means for determining a set of nominal values of adjusting parameters of the apparatus, corresponding to said characteristics and for passing them to the apparatus; means for measuring said adjusting parameters of the apparatus, and for computing corresponding values of said characteristics of the beam; and means for determining whether a correction of said values of adjusting parameters is necessary.

Abstract: An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.

Abstract: The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation.

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

Abstract: A gas flux measuring device measures a region, such as a forest, as a measuring object with no influence by concomitants and with high responsiveness and excellent measuring stability. The device includes a laser beam source, laser output controller, wavelength modulation controller, first light receiver, first direct current component detector, first wavelength modulation demodulator, optical system, reference cell, second light receiver, second direct current component detector, second wavelength modulation demodulator, third wavelength modulation demodulator, analyzer, adder, temperature measurement and pressure measurement. A flow velocity measuring device directly measures horizontal 2-directional flow velocity components and a vertical directional flow velocity component of a gas flow in the measuring region and puts out these measurement signals into the analyzer.

Abstract: A radiation image detector with improved readout efficiency. The detector records a radiation image by generating and storing electric charges when irradiated with radiation, and the image is read out by irradiating readout light. The detector includes first line electrodes and second line electrodes disposed alternately with each other. An opaque line insulator that blocks the readout light is provided on each side face extending in the longitudinal direction of each second line electrode. The insulator has a width smaller than the distance between the first and second line electrodes. This arrangement allows the electric charges in the area of the photoconductive layer adjacent to the side faces of the first line electrodes to be fully discharged, and the electric charges in the area of the photoconductive layer adjacent to the side faces of the second line electrodes to be prevented from discharging.

Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.

Abstract: A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The logic portions of the programmable logic device may be tri-stated.

Abstract: The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 ?m or more but 2 ?m or less.

Abstract: A strained transistor includes a silicon transistor, an encapsulating layer of silicon insulating material with an outer surface, and a stress inducing multilayer cap deposited on the outer surface of the encapsulating layer with at least two layers including a layer of rare earth oxide and a layer including silicon. The stress inducing cap can be designed to provide either compressive strain or tensile strain and virtually any desired amount of strain without producing dislocations, defects, and fractures in the structure.

Abstract: A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

Abstract: An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 ? electron aromatic rings, M 10 ? electron aromatic rings, and N 14? electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle ? of impedance of the organic semiconductor material is ?80°????90° as determined in the measurement of impedance in a frequency f range of 100 Hz?f?1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 ?m.

Abstract: An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.

Abstract: The present invention provides a method for manufacturing a semiconductor device, by which a transistor including an active layer, a gate insulating film in contact with the active layer, and a gate electrode overlapping the active layer with the gate insulating film therebetween is provided; an impurity is added to a part of a first region overlapped with the gate electrode with the gate insulating film therebetween in the active layer and a second region but the first region in the active layer by adding the impurity to the active layer from one oblique direction; and the second region is situated in the one direction relative to the first region.

Abstract: According to one aspect of the invention, there is provided a semiconductor device fabrication method comprising: forming a gate insulating film on a semiconductor substrate; forming a film containing a predetermined semiconductor material and germanium on the gate insulating film; oxidizing the film to form a first film having a germanium concentration higher than that of the film and a film thickness smaller than that of the film on the gate insulating film, and form an oxide film on the first film; removing the oxide film; forming, on the first film, a second film containing the semiconductor material and having a germanium concentration lower than that of the first film; forming a gate electrode by etching the second and first films; and forming a source region and drain region by ion-implanting a predetermined impurity by using the gate electrode as a mask.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate and the sensor chip. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. The sensor chip can be electrically connected to an external device via a plurality of solder balls implanted on a surface of the substrate not for mounting the sensor chip. Therefore, the sensor semiconductor device is fabricated in a cost-effective manner, and circuit cracking and a know good die (KGD) problem are prevented.

Abstract: A method of darkening a defective pixel including a short between a source electrode and a drain electrode in a thin film transistor substrate includes forming a gate line and a data line on a substrate to define a pixel region; forming a thin film transistor at a crossing of the gate line and the data line, the thin film transistor having a gate electrode, a source electrode and a drain electrode; forming a pixel electrode and a common electrode in the pixel region; forming a common line provided in parallel to the gate line and connected to the common electrode; forming an extended part of the drain electrode in parallel to the gate line; and cutting the extended part along a cutting line.

Abstract: A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive b

Abstract: An organic electroluminescent device includes a transparent substrate having at least first, second and third pixels defined thereon, a first longitudinal bank located between the first pixel and the second pixel, a second longitudinal bank located between the second pixel and the third pixel, and an organic luminous polymer layer over the substrate and between the first longitudinal bank and the second longitudinal bank. The device also includes a transverse bank extending between the first longitudinal bank and the second longitudinal bank. Sidewalls of the longitudinal banks and the transverse bank slope outwardly. The transverse bank has a height which is less than a height of the longitudinal banks. A method of forming the device utilizes nozzle coating or ink-jet coating, and a specially configured mask for producing the banks of differing heights.

Abstract: To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.

Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3?cm.

Abstract: A light emitting diode package includes a light emitting diode device and a lens encapsulating the light emitting diode device. The lens includes two reflective surfaces disposed at either side of a central axis, and a plurality of diffractive surfaces disposed between the reflective surfaces and each of the diffractive surfaces has a tilt angle respective to the central axis. Portions of light beams incident to each of the reflective surfaces are reflected to at least one diffractive surface and are diffracted and collected into a convergent angle.

Abstract: A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant region of the upper surface of the substrate, and a second meniscus control feature on the substrate surrounding the first encapsulant region and defining a second encapsulant region of the upper surface of the substrate. The first and second meniscus control features may be substantially coplanar with the die attach pad. A packaged LED includes a submount as described above and further includes an LED chip on the die attach pad, a first encapsulant on the substrate within the first encapsulant region, and a second encapsulant on the substrate within the second encapsulant region and covering the first encapsulant.

Abstract: The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to each other in that order; first and second electrodes that are connected to the first-conductivity-type region and the second-conductivity-type region, respectively, at both ends of the semiconductor layer; and a gate electrode that is coupled to the second-conductivity-type region or the first-conductivity-type region in an intermediate area of the semiconductor layer, the gate electrode being provided over a plurality of faces of a semiconductor layer portion serving as the second-conductivity-type region or the first-conductivity-type region in the intermediate area.

Abstract: A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word line that is used to provide read and write access to the memory cell. A second word line is located adjacent to and separated by an insulative material from one of the doped regions of the thyristor device for write operations to the memory cell, for example, by enhancing the switching of the thyristor device from a high conductance state to a low conductance state and/or from the low conductance state to the high conductance. This type of memory circuit can be implemented to significantly reduce standby power consumption and access time.

Abstract: Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.

Abstract: An organic-framework zeolite interlayer dielectric is disclosed. The interlayer dielectric's resistance to chemical attack, its dielectric constant, its mechanical strength, or combinations thereof can be tailored by (1) varying the ratio of carbon-to-oxygen in the organic-framework zeolite, (2) by including tetravalent atoms other than silicon at tetrahedral sites in the organic-framework zeolite, or (3) by including combinations of pentavalent/trivalent atoms at tetrahedral sites in the organic-framework zeolite.

Abstract: A semiconductor integrated circuit effectively makes use of wiring channels of wiring formed by a damascene method. When first cells are used, since the M1 power source lines are laid out at positions spaced away from a boundary between the cells, the power source lines are not combined in laying out a semiconductor integrated circuit. As a result, the width of the power source lines is not changed. Accordingly, an interval between the line and a line which is arranged close to the line, determined in response to a line width of the lines, can satisfy a design rule; and, hence, the reduction of the wiring channels can be obviated, whereby the supply rate of the wiring channels can be enhanced, and, further, the integrity of a semiconductor chip can be enhanced.

Abstract: In a semiconductor substrate of a first conductivity type, a first well region of the first conductivity type, second well regions of a second conductivity type, and a third well region of the second conductivity type are formed. The second well regions are formed in the semiconductor substrate excluding the region where the first well region has been formed. The third well region is formed under the first and second well regions in the semiconductor substrate in such a manner that a part of the third well region under the first well region is removed, thereby connecting the second well regions to one another electrically.