Abstract: The present invention includes compositions and methods of making cation-substituted and fluorine-substituted spinel cathode compositions by firing a LiMn2-y-zLiyMzO4 oxide with NH4HF2 at low temperatures of between about 300 and 700° C. for 2 to 8 hours and a ? of more than 0 and less than about 0.50, mixed two-phase compositions consisting of a spinel cathode and a layered oxide cathode, and coupling them with unmodified or surface modified graphite anodes in lithium ion cells.

Abstract: The present invention relates to a semiconductive polymer composition comprising a olefin homo- or copolymer wherein the composition has a direct current volume resistivity of less than 1000 Ohm.cm at 90 ° C., an elongation at break which after aging for 240 hours at 135 ° C. does not change by more than 25%, and a total number of structures of 20 or less in the SIED test. Furthermore, the present invention relates to an electric power cable comprising a conductor, a semicoducting layer and, adjacent to the semiconducting layer, an insulation layer, wherein the semiconducting layer is formed by said semiconductive polymer composition and to the use of said semiconducting polymer composition for the production of a semiconductive layer of an electric power cable.

Abstract: The present invention relates to a method of producing copper nanoparticles, in particular to, a method of producing copper nanoparticles, including: preparing a first solution including a polar solvent, a dispersing agent and one or more reducing agents selected from the group consisting of sodium hypophosphates(NaH2PO2), hydrazine(N2H4), hydrochloride and sodium borohydride(NaBH4) and heating the solution; preparing a second solution including a polar solvent and a copper precursor and heating the solution; and injecting the heated second solution into the heated first solution at a time and mixing each other. According to the present invention, copper nanoparticles which are fine and uniform can be produced simply, and thus the method is useful in mass production of copper nanoparticles.

Abstract: An insulating adhesive film and an anisotropically electroconductive adhesive film satisfying low-temperature curability, high adhesion and high reliability are provided. An anisotropically electroconductive adhesive film of the present invention is so configured that electroconductive particles 7 are dispersed in an insulating adhesive resin 6, comprising as main components: a radical polymerizable resin component having an unsaturated double bond; a resin component having no unsaturated double bond; a phosphoric acid-containing resin component; and a radical polymerization initiator.

Abstract: A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the reaction chamber through the inlet end and exit the chamber through the exit end. Upon passing through the chamber the carrier gas comes into contact with a precursor which is heated within the reaction chamber. A collection substrate placed downstream from the precursor allows for the formation and growth of nanowires thereon without the use of a catalyst. A second embodiment of the present invention is comprised of a reaction chamber, a carrier gas, a precursor target, a laser beam and a collection substrate. The carrier gas with a flow rate and a gas pressure is allowed to enter the reaction chamber through an inlet end and exit the reaction chamber through the exit end.

Abstract: There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.

Abstract: The present invention provides a method for forming a black electrode by performing sintering at a temperature in the range of 500-600° C. after applying a lead-free black conductive composition to a substrate. The aforementioned black electrode comprises a binder comprising a crystallized glass component. The aforementioned black conductive composition comprises conductive particles of black RuO2, lead-free black ruthenium-based polyoxide, and mixtures thereof in an amount of 4-30 wt %, based on the total weight of the composition, a lead-free non-conductive black oxide in an amount of 0-30 wt %, based on the total weight of the composition, and a lead-free bismuth-based glass binder in an amount of 10-50 wt %, based on the total weight of the composition.

Abstract: A modified acrylic resin. The modified acrylic resin comprises a transparent resin and an acrylic acid monomer having a cyclic group, and the modified acrylic resin has a low moisture adsorption. Additionally, the modified acrylic resin can be incorporated with light scattering particle and light stabilizer to provide an optical diffusing composition for use in backlight module of LCD panels.

Abstract: A photonic crystal material comprises an ordered array of nanoscopic particles locked into position by a dehydrated hydrogel matrix. The material can be powdered and used as a colorant. The photonic crystal material has the advantage that its array of nanoscopic particles self assembles for ease in producing a diffractive material that retains these properties when added to other polymers and binders. This material may be added to polymers with ionic content without destroying the array that produces diffraction. The material is easily stored compared to hydrated hydrogels that must be stored in water.

Abstract: The object of the present invention is to provide a fiber sheet or a molded fiber sheet having excellent flame retardancy A flame retardant fiber sheet containing a polyammonium phosphate with average degree of polymerization in the range of between 10 and 40 is provided in the present invention. The polyammonium phosphate is insoluble or sparingly soluble in water so that said polyammonium phosphate gives the fiber sheet excellent flame retardancy with water resistance and durability, and is also inexpensive. The molded fiber sheet is highly flame retardant and harmless, so that the molded fiber sheet is useful for automobile and building interiors.

Abstract: A dryer seal structure which incorporates a polyurethane foam interior. The foam incorporates a flame retardant additive of intumescent character to provide enhanced resistance to flammability.

Abstract: Disclosed herein is a flame retardant thermoplastic resin composition having excellent weatherability comprising (A) about 100 parts by weight of a rubber modified aromatic vinyl resin comprising (a1) about 15 to about 100% by weight of a grafted copolymer resin prepared by graft-polymerizing about 5 to 65% by weight of a rubbery polymer, about 10 to 95% by weight of an aromatic vinyl monomer and about 0 to 40% by weight of a monomer copolymerizable with said aromatic vinyl monomer; and (a2) about 0 to 85% by weight of a copolymer resin prepared by polymerizing about 40 to 90% by weight of an aromatic vinyl monomer and about 10 to 60% by weight of a monomer copolymerizable with said aromatic vinyl monomer; (B) about 0.1 to about 10 parts by weight of a ring-shaped alkyl phosphonate ester compound; and (C) about 0.05 to about 3 parts by weight of a HALS compound.

Abstract: The present invention is a method for making a chemiluminescent paint whose chemo-fluorescent reaction's active period is controllable as a first-order function of humidity, thus reducing to a second order function the prior art's dependency on ambient temperature, through encapsulating a key reactant in a moisture-sensitive, nano-polymeric structure and combining that encapsulating structure and encapsulated reactant with the other elements necessary for both the excitative and fluorescing reactions of the chemiluminescent paint.

Abstract: A nail device including an elongated body having a handle at one end of said body and a nailing region for adapting nail elements to on the opposite end, wherein the nailing region comprises a broad surface for receiving the blow of a hammer and means for interchanging the nail elements, wherein the nail elements can be either nail setting elements or center punch elements.

Abstract: The present invention relates to a collapsible hoist that can be easily stored and set up. The hoist is designed to provide sufficient lifting support to lift large objects such as an engine out of an engine compartment.

Abstract: A powered rope ascender that supports a person or a load while ascending a vertical rope. The rope ascender has a motor driven capstan drum that engages the rope. A pinch roller grips the rope against the capstan drum. A load limiting assembly releases the grip by the pinch roller when the load supported by the ascender exceeds a predetermined amount. A centrifugal clutch reduces starting torque required by the motor and the outer drum of the centrifugal clutch interacts with a brake to hold position on the rope. For heavy loads a motion activated brake is used. Hand controls provide a freewheeling, a braking and an ascending mode of operation. A harmonic drive or planetary reduction gears provide speed reduction from the motor to the capstan drum. The powered rope ascender can be threaded on the rope without access to a rope end.

Abstract: The invention provides a rope sheave having two substantially opposed faces, each face having a plurality of ridges extending from an inner circumferential region of the face to an outer circumferential region of the face. The ridges are arranged such that those portions of the ridges on one face at the inner circumferential region substantially oppose those portions of the ridges on the opposite face at the inner circumferential region, and those portions of the ridges at the outer circumferential region on one face substantially oppose regions between those portions of the ridges at the outer circumferential region of the other face. The faces may be separable to provide two sheave parts.

Abstract: A silt fence structure and method of controlling erosion are disclosed. The silt fence structure includes a water permeable fence, an apron having first and second edges, the first edge providing a buried apron toe, the second edge attaching to the water permeable fence, and at least one flow barrier attached to the water permeable fence and to the apron so as to impede lateral runoff flow along the water permeable fence.

Abstract: A falling rock preventing fence assembled with a steel net is disclosed, in which a plurality of support members are provided in a pipe shape having a rectangular grooves in upper and lower longitudinal directions, with the support member being installed on the ground at regular intervals, and both ends of the steel net formed in a rectangular plate shape are inserted into the rectangular grooves of the neighboring support member and are fixed using a fixture such as a bolt, etc., and the upper and lower portions of the steel nets stacked in the upper and lower direction are connected with a connection member such as a bolt, etc., and the strength of the steel net is enhanced by the rectangular grooves longitudinally formed in the support member and the end of the steel net inserted in the rectangular groove.

Abstract: A system for providing re-usable safety support fences and fall restraints for the construction industry. The system primarily comprises a disposable base which is welded to an I-beam or otherwise permanently attached to a floor or roof and a removable support post that screws into the disposable base. The support posts can form the posts of a safety fence through which steel cables are threaded to form the fence. On the other hand, a fall arrestor, comprising an eye hook onto which a construction or maintenance worker on the perimeter of a building may attach, can also be screwed into the permanently mounted disposable base. Additional embodiments for use with concrete construction instead of steel I-beams are disclosed. The basis for the invention is inexpensive disposable bases which remain an integral part of the structure after completion coupled with removable and re-useable post devices which screw into the disposable bases.

Abstract: An example of the cable barrier system includes a cable-release anchor assembly; a length of need section having a plurality of line post spaced from each other, each of the line posts having an internal cavity and a slot formed along a sidewall extending downward from a top end of the post; a cable having a terminal end that is releasably held in tension by the cable-release anchor assembly; and the cable releasably connected to each line post by a post-cable connector, the post-cable connector having an elongated portion forming a loop, the elongated portion disposed substantially within the cavity and the loop extending through the slot exterior of the cavity, the cable slidingly disposed in the loop, wherein when an object impacts and deforms one of the posts toward ground level the cable is released from the deformed post in a manner such that the cable tends to stay in contact with the impacting object.

Abstract: An insert of this invention is attached to a post and secures an upper and/or lower rail to the post. The upper, lower rail is secured by disposing a bracket or extension within a reinforcing member, the reinforcing member present within a cavity defined in the upper or lower rail.

Abstract: An interlocking fence system is disclosed. Two spaced-apart upright posts (8, 10) attached to a grade G support an upper rail (4) with an offset locking aperture (26) and an alignment aperture (32) and further support a lower rail (6) with an alignment aperture (40). A picket (2) has a locking slot (22) with an edge (28) of the locking aperture (26) in the upper rail (4) serving as a tab to restrict axial movement when inserted therein. Alignment aperture (32) in the upper rail (4) and alignment aperture (40) in the lower rail (6) serve to restrict lateral movement of the picket (2). To support the rails (4, 6), retaining slots (24, 24?) in the upper rail (4) and retaining slots (42, 42?) in the lower rail (6) can be retained by an edge (38, 50, 38?, 50?) in support apertures (12, 14, 16, 18) in the posts (8A, 10A).

Abstract: A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly in contact with one electrical terminal of the transistor. Particularly, the transistor can be a field effect transistor or a bipolar junction transistor.

Abstract: A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

Abstract: A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.

Abstract: A memory cell device has a bottom electrode and a top electrode, a plug of memory material in contact with the bottom electrode, and a cup-shaped conductive member having a rim that contacts the top electrode and an opening in the bottom that contacts the memory material. Accordingly, the conductive path in the memory cells passes from the top electrode through the conductive cup-shaped member, and through the plug of phase change material to the bottom electrode.

Abstract: A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source region and a drain region formed in a surface of each active region; a dot type lower electrode including a first contact plug formed in the drain region; second contact plugs formed in the source region and the isolation structure forming a line parallel to the gate line; a lower electrode contact formed on the lower electrode; a phase change layer and an upper electrode formed on the lower electrode contact; an upper electrode contact formed on the upper electrode; contacts for ground lines, formed between the active regions to come into contact with the second contact plugs; a bit line formed in the active region; and ground lines formed between the active regions.

Abstract: Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.

Abstract: A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.

Abstract: Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0?x?1, 0?y?1 and 0?x+y?1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode.

Abstract: A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108 cm?2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.

Abstract: An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

Abstract: A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.

Abstract: A field effect transistor array comprising a substrate and a plurality of single wall carbon nano-tubes disposed on a surface of the substrate. A plurality of electrodes are disposed over the nano-tubes such that the conductive strips are spaced-apart from each other. These electrodes form the contact point for the drain and source of the field effect transistor, while one or more of the nano-carbon tubes form the channel between the source and the drain.

Abstract: A spin transistor 1 is a spin transistor 1 having a source S of a ferromagnetic material, a drain D of a ferromagnetic material, a semiconductor SM on which the source S and the drain D are disposed and which forms a Schottky contact with the source S, and a gate electrode GE disposed through a gate insulating layer GI on the semiconductor SM, wherein a tunnel barrier insulating layer TI constituting a tunnel barrier is interposed between the semiconductor SM and the drain D.

Abstract: A composition, comprising a solid mixture of organic semiconductor molecules and plasticizer molecules.

Abstract: An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.

Abstract: Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device are also disclosed, which include: a) a surface within the device, and b) at least one light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material, at least one crosslinking agent and at least one solvent. Methods of producing optoelectronic devices are also disclosed that include: a) providing a surface, b) providing at least one sufficiently light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material and at least one catalyst, c) applying the crosslinkable material to the surface, and d) curing the crosslinkable material to form a sufficiently light-transmissive crosslinked composition.

Abstract: The present disclosure relates to an organic memory device and a fabrication method thereof. The organic memory device comprises a first electrode, a second electrode, and an organic memory layer situated between the electrodes, wherein a metallic nanoparticle layer is further situated between the first electrode and the organic memory layer. Since the organic memory device may be operated using only positive voltages, a 1D1R device composed of one diode and one resistor can be realized and a passive matrix can be realized due to the 1D1R structure. Accordingly, the organic memory device enables higher integration, ultrahigh speeds, larger capacities, lower power consumption, and/or lower prices.

Abstract: In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.

Abstract: An organic electronic device including: a first layer including a conductive or semiconductive organic material; a second layer including a conductive or semiconductive inorganic material, and in contact with the first layer; and an interface layer between the first layer and the second layer, wherein the interface layer includes a conductive or semiconductive organic material and a conductive or semiconductive inorganic material.

Abstract: A thin film transistor for an LCD device is disclosed, which comprises a gate electrode formed on a substrate; a gate insulation film formed of a high dielectric constant insulator having a bond structure of functional group, metal oxide, silicon and oxygen; and source and drain electrodes formed on the gate insulation film.

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

Abstract: A phase change memory cell is disclosed. The phase change memory cell includes a first thin film spacer and a second thin film spacer. The first thin film spacer defines a sub-lithographic dimension and is electrically coupled to a first electrode. The second thin film spacer defines a sub-lithographic dimension and is electrically coupled between a second electrode and the first thin film spacer. In this regard, the phase change memory cell is formed at a boundary where the first thin film spacer electrically contacts the second thin film spacer.

Abstract: A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulating layer that is positioned immediately on top of the gallium oxygen layer together positioned on upper surface (14) of a III-V compound semiconductor wafer structure (13). Together the lower gallium oxide compound layer and the second insulating layer form a gallium oxide gate insulating structure. The gallium oxide gate insulating structure and underlying compound semiconductor gallium arsenide layer (15) meet at an atomically abrupt interface at the surface of with the compound semiconductor wafer structure (14). The initial essentially gallium oxygen layer serves to passivate and protect the underlying compound semiconductor sure from the second insulating oxide layer. A refractory mal gate electrode layer (17) is positioned on upper surface (18) of the second insulating oxide layer.

Abstract: A device and method for measuring ion beam angle with respect to a substrate is disclosed. The method includes forming a plurality of shadowing structures extending substantially perpendicular from an upper surface of the substrate, directing an ion beam toward the substrate, the plurality of shadowing structures interrupting an incident angle of the ion beam to define implanted and non-implanted portions of the substrate. The method further includes measuring the dose of implanted species within the substrate, determining an implanted surface area as a function of measuring the dose of implant, determining non-implanted surface area based on the implanted surface area, and obtaining the ion beam angle as a function of the non-implanted surface area.

Abstract: By providing vias of increased mass flow blocking capability next to respective line segments of an electromigration test structure, the reliability of respective assessments may be enhanced, since electromigration-induced void formation in the test line segment under consideration may be efficiently decoupled from metal diffusion of neighboring test areas of the test structure.

Abstract: A semiconductor device includes at least one first type of pad and at least one second type of pad having a different area from the first type of pad. A pad connection unit electrically couples the at least one second type of pad to an integrated circuit of the semiconductor device during a test mode, and disconnects the at least one second type of pad from the integrated circuit during a normal operating mode.