Abstract: Exemplary embodiments provide structures and fabrication methods for dual work function metal gate electrodes. The work function value of a metal gate electrode can be increased and/or decreased by disposing various electronegative species and/or electropositive species at the metal/dielectric interface to control interface dipoles. In an exemplary embodiment, various electronegative species can be disposed at the metal/dielectric interface to increase the work function value of the metal, which can be used for a PMOS metal gate electrode in a dual work function gated device. Various electropositive species can be disposed at the metal/dielectric interface to decrease the work function value of the metal, which can be used for an NMOS metal gate electrode in the dual work function gated device.

Abstract: A semiconductor device and a fabricating method thereof are provided. The method includes forming a Tetraethyl Orthosilicate (TEOS) layer on a semiconductor substrate, and performing a heat treatment on the TEOS layer to shrink the LEOS layer, thereby forming a gate oxide layer of a shrunken TEOS layer.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electron mobility can be improved, and production residue and damage can be minimized.

Abstract: A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate and produce a concentration profile such that the concentration of nitrogen progressively increases and then decreases toward the substrate with the maximum concentration of nitrogen in the sacrificial oxide layer. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.

Abstract: A method of forming a semiconductor device that can include forming a channel region in a semiconductor substrate; forming a first gate electrode and a second gate electrodes over the semiconductor substrate, the first gate electrode and the second gate electrode being spaced apart from each other at a predetermined distance; forming spacers on sidewalls of the first gate electrode and the second gate electrode and over the semiconductor substrate; forming source/drain regions in the semiconductor substrate; forming a first interlayer insulating layer and a second interlayer insulating over the semiconductor substrate; forming a plurality of contact holes in the first interlayer insulating layer and the second interlayer insulating; and then forming a contact plug in the plurality of contact holes.

Abstract: A method for fabricating a semiconductor device is provided. A gate pattern including a gate insulation layer, an oxidation suppression layer, and a polysilicon layer is formed over a substrate. A first metal layer is formed over the substrate, and first and second silicide layers are formed over the polysilicon layer and the impurity regions by performing a first thermal annealing process. A non-reacted portion of the first metal layer is removed. A premetal dielectric (PMD) layer is formed over the substrate, and polished to expose the first silicide layer. A second metal layer is formed over the PMD layer. A second thermal annealing process is performed to the second metal layer to fully silicide the polysilicon layer and the oxidation suppression layer, thereby forming a third silicide layer. A non-reacted portion of the second metal layer is removed.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. In the semiconductor device, an insulating layer and a polysilicon layer are formed on a substrate, and a notch region is formed at a portion of the polysilicon layer contacting the insulating layer. The widths of the polysilicon layer and the insulating layer are respectively reduced in the notch region.

Abstract: In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Abstract: At least one differential pressure sensing device has an active surface with an active region and a back surface with a recess. Next, a sacrificial layer is formed on a surface of the active region. Then, the differential pressure sensing device is bonded and electrically coupled with a surface of a carrier that has at least one through-hole corresponding to the recess of the differential pressure sensing device. Afterwards, at least one molding compound is formed to encapsulate the carrier and differential pressure sensing device while exposing the through-hole region and an upper surface of the sacrificial layer. Then, a solvent is used to naturally decompose the sacrificial layer, such that the active region of the differential pressure sensing device is exposed to atmosphere, thereby forming a differential pressure sensing device package with the through-hole.

Abstract: A switching device having a construction that facilitates physical contact between the second terminal electrode and the first terminal electrode, thereby enabling the performance of turn-on. Embodiments do not require an impurity diffusion region nor performs switching action through the channel region so that can become highly integrated and thinness. Also, switching can be performed by way of the physical contact of the first terminal electrode and the second terminal electrode, thereby making it possible to improve turn on-off characteristics.

Abstract: A MEMS microphone module having an application specific IC and a microphone chip is disclosed. The application specific IC has a plurality of first vias and a plurality of first pads, and the first vias are connected to the first pads. The microphone chip has a resonant cavity, a plurality of second vias and a plurality of second pads, and the second vias are connected to the second pads. The microphone chip is disposed on a first surface of the application specific IC with an opening of the resonant cavity facing toward a first surface of the application specific IC. The second conductive vias of the microphone chip are also electrically connected to the first vias of the application specific IC. By placing the microphone chip on the first surface of the application specific IC, the present invention could reduce the package size and increase the reliability of the package.

Abstract: A magnetic memory device and a manufacturing method thereof are provided. The magnetic memory device can include a word line, a freely switchable layer, a fixed layer, a dielectric layer, and a bit line. The freely switchable layer can be electrically connected to a diffusion region at one side of the word line, and the fixed layer can be horizontally adjacent to the freely switchable layer. The dielectric layer can be provided between the freely switchable layer and the fixed layer, and the bit line can be electrically connected to the fixed layer.

Abstract: A seek-scan probe (SSP) memory including a recess cavity to self-align magnets includes a frame, a movable platform movably coupled to the frame, a coil coupled to the movable platform, and a cap wafer having coupled to the frame. The cap wafer includes a recess cavity to receive a magnet that produces a magnetic field. By energizing the coil while in the magnetic field a physical force is produced that is translated into movement of the movable platform.

Abstract: Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered.

Abstract: An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.

Abstract: Embodiments of an image sensor and method of manufacturing the same are provided. An image sensor can include an interlayer dielectric layer formed on a substrate including a photodiode; a color filter layer formed on the interlayer dielectric layer; a first oxide film microlens formed on the color filter layer; and a second oxide film microlens formed on the first oxide film microlens.

Abstract: An image sensor and a method of manufacturing the same capable of improving image quality by preventing the generation of a lens bridge formed due to a mutual connection of neighboring microlenses. The image sensor can include a semiconductor substrate having a plurality of photodiodes formed thereon; an insulation layer formed over the semiconductor substrate; a color filter layer formed over the insulation layer; a planarization layer formed over the whole surface including the color filter layer and having a plularity of concave regions and a convex regions repeatedly arranged in a pixel period; and a microlens formed over each of the concave regions and the convex regions.

Abstract: A method of manufacturing an image sensor having a minimized spatial distance between microlenses to improve integration, and thus, enhance the ability of each microlens to condense light incident.

Abstract: An image sensor may include a color filter layer on a semiconductor substrate; and a microlens on the color filter layer and including a non-photosensitive insulating layer.

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor includes a photodiode region, an insulation layer structure, a light leakage preventing unit, color filters, and microlenses. The photodiode region in a pixel area of a semiconductor substrate generates an electric signal corresponding to entered light. The photodiode region includes a first photodiode, a second photodiode, and a third photodiode. The insulation layer structure includes trenches corresponding to boundaries between the first to third photodiodes. The light leakage preventing unit is formed in the trenches between the photodiodes and prevents light from passing through the trenches. The color filters are formed on the insulation layer structure corresponding to the first to third photodiodes, and the microlenses are disposed on the color filter corresponding to each of the color filters.

Abstract: Disclosed is an image sensor and a method of fabricating the same, including a color filter layer having a red color filter, a green color filter and a blue color filter, a planarization layer which is formed on the color filter layer and has a groove corresponding to boundary areas between the color filters, and a micro-lens array on the planarization layer.

Abstract: An image sensor includes a first photodiode formed in a semiconductor substrate at a depth reachable by red light, a second photodiode disposed on or over the first photodiode in the semiconductor substrate at a depth reachable by blue light, a third photodiode disposed adjacent to the second photodiode, a plug connected to the first photodiode, transistor structures on the semiconductor substrate and electrically connected with the first, second and third diodes, an insulating layer covering the transistor structures, and microlenses on the insulating layer.

Abstract: An image sensor multi-chips package structure, includes a first package comprising a first chip with image sensors having first bonding pads and micro lens on a first active surface, a first die receiving window and first conductive inter-connecting through holes penetrated from a first upper contact pads on a first upper surface of the first chip to a first lower contact pads on a first lower surface of the first chip, wherein a first upper build up layer on the active surface of the first chip coupling from the first bonding pads to the first upper contact pads; a second package comprising a second chip having second bonding pads on a second active surface, a second die receiving window and second conductive inter-connecting through holes penetrated from a second upper contact pads of a second upper surface of the second chip to a second lower contact pads on a second lower surface of the second chip, wherein a second upper build up layers on the second upper surface for coupling from the second bonding pad

Abstract: Provided are an image sensor package used as a semiconductor device package and a method of packaging the image sensor package. The package and method prevent defects in sealing rings and connections for electrical connection during manufacturing process, by designating the melting point of solder balls used for the image sensor package different from the melting point of solder used in other bonding applications. The semiconductor device package includes a semiconductor device, a substrate assembly, a solder sealing ring, and a plurality of solder balls. The substrate assembly is disposed facing the semiconductor device. The solder sealing ring tightly seals the semiconductor device and the substrate assembly. The solder balls are formed in an outer periphery of the solder sealing ring of the substrate assembly. The solder sealing ring has a higher melting point than the solder balls.

Abstract: The invention provides an optical sensor package. The package comprises a circuit board, an image sensor module and a packaging cap. The image sensor module electrically connects to the circuit board; the packaging cap is mounted on the circuit board and integrally packages the image sensor module. Hereby, the new architecture of the invention is not complex and its volume is small. The cost of the package is low, and the invention has the functions of electrostatic discharge and waterproofing; besides, the packaging cap can integrally package the image sensor module and a light-emitting module.

Abstract: A photodetector having sensitivity in a wide temperature range in both an infrared and an ultraviolet band is provided. The photodetector is formed on a single chip and is designed to be blind to solar or visible radiation. Structures disclosed allow fast and efficient detection of signals with high spatial and temporal resolution. Such sensors may be used for multi-pixel focal arrays and applied for fire detection applications, various space- and military-related applications and other applications. A method for increasing rejection of visible light by the IR sensitive material is also provided.

Abstract: A compound image sensor includes a plurality of PN junction layers connected in parallel. The PN junction layers have different band gap energies, each corresponding to the absorption of light of blue, green, and red colors. The image sensor further includes oxide layers deposited between the PN junction layers to insulate the PN junction layers.

Abstract: A semiconductor radiation detector and a radiation detection equipment capable of suitably preventing the deterioration of the detection characteristics are disclosed. The semiconductor radiation detector 1 includes a semiconductor crystal 11a formed of at least one of CdTe, CdZnTe, GaAs and TlBr held between the electrodes of a cathode C and an anode A. At least one of the electrodes is a stack structure including a plurality of metals. The first layer is formed of Pt or Au, and the second layer is formed of a metal lower in hardness than Pt or Au, as the case may be, of the first layer. The second layer of In, for example, is formed by the electroless plating method. Also, a metal may be further stacked on the second layer.

Abstract: A CMOS image sensor adapted to remove a dead zone and preventing occurrence of dark current. The CMOS image sensor can an epi layer defined by at least a photodiode region and a device isolation region formed over a semiconductor substrate; a device isolation film formed in the device isolation region; a gate electrode formed over the epi layer; and a contact plug overlapping a portion of the photodiode region and a portion of the gate electrode.

Abstract: Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.

Abstract: A method comprises forming a gate stack comprising a polysilicon layer, a metal layer and a polysilicon layer over a gate dielectric and substrate. The metal layer is buried inside the gate stack to alloy the silicon and metal at the bottom of the gate. The gate stack is then etched to form a gate. A silicidation is then performed to form a silicide at the bottom of the gate. Optionally, a second metal layer may be formed on top of the gate stack. As such, during silicidation, a silicide may be formed at the top of the gate.

Abstract: The present invention provides a system comprising a semiconductor device, a method of controlling the semiconductor device in the system, and a method of manufacturing the semiconductor device in the system. The semiconductor device includes: a semiconductor region located in a semiconductor layer formed on an isolating layer; an ONO film on the semiconductor region; bit lines on either side of the semiconductor region, which are located in the semiconductor layer, and are in contact with the isolating layer; a device isolating region on two different sides of the semiconductor region from the sides on which the bit lines are located, the device isolating region being in contact with the isolating layer; and a first voltage applying unit that is coupled to the semiconductor region. In this semiconductor device, the semiconductor region is surrounded by the bit lines and the device isolating region, and is electrically isolated from other semiconductor regions.

Abstract: A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target including a high atomic weight layer formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.

Abstract: In an aspect, a method is provided for forming a silicon-on-insulator (SOI) layer. The method includes the steps of (1) providing a silicon substrate; (2) selectively implanting the silicon substrate with oxygen using a low implant energy to form an ultra-thin patterned seed layer; and (3) employing the ultra-thin patterned seed layer to form a patterned SOI layer on the silicon substrate. Numerous other aspects are provided.

Abstract: A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench.

Abstract: A dual-bit memory device is provided which includes trench isolation material disposed below a bit line that is shared by adjacent memory cells. The dual-bit memory device comprises a substrate, a first memory cell designed to store two bits of information, a second memory cell designed to store two bits of information, and an insulator region. The first memory cell is adjacent to the second memory cell. The first memory cell includes a first buried bit line and a second buried bit line. The first memory cell and the second memory cell share the second buried bit line. The insulator region is disposed in the substrate below the second buried bit line to prevent electrons from flowing between the first memory cell and the second memory cell.

Abstract: One embodiment of the present invention relates to a method of forming an isolation structure. During this method, an isolation trench is formed within a semiconductor body. After this trench is formed, it is filled by performing multiple high-frequency plasma depositions to deposit multiple dielectric layers over the semiconductor body. A first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.

Abstract: A method for fabricating a semiconductor device is provided. The method includes forming a pad oxide layer on a semiconductor substrate, forming a pad nitride layer on the pad oxide layer, forming a capping layer on the pad nitride layer, patterning the capping layer, the pad nitride layer, and the pad oxide layer by a photolithography method to expose portions of the semiconductor substrate, forming a field oxidation layer having bird's beaks, the bird's beaks being formed under the pad nitride layer, forming trenches in the semiconductor substrate by anisotropically etching the field oxide layer and the semiconductor substrate using the pad nitride layer as a mask, removing the capping layer, the pad nitride layer, the pad oxide layer, and the bird's beaks, and forming an isolation region in the trenches.

Abstract: A new and improved liner modification method for a liner oxide layer in an STI trench is disclosed. According to the method, an STI trench is etched in a substrate and a liner oxide layer is formed on the trench surfaces by oxidation techniques. The method further includes pre-treatment of the trench surfaces using a nitrogen-containing gas prior to formation of the liner oxide layer, post-formation nitridation of the liner oxide layer, or both pre-treatment of the trench surfaces and post-formation nitridation of the liner oxide layer. The liner modification method of the present invention optimizes the inverse narrow width effect (INWE) and gate oxide integrity (GOI) of STI structures and prevents diffusion of dopant into the liner oxide layer during subsequent processing.

Abstract: Disclosed herein are systems and methods for stacking passive component devices on a substrate. A conductive material is printed onto a first substrate using a fluid ejection device to form a printed passive device according to a predetermined design. The first substrate is attached to a second substrate, such as a die, to form a component for performing a predetermined function. The component may then be tested to determine whether the component formed according to the predetermined design performs the predetermined function. The design may be adjusted in response to the test to improve the performance of the component in performing the predetermined function. Multiple substrates having printed passive devices may be stacked and electrically connected to the die or other substrate in order to increase the number of devices formed on a particular area of that die or other substrate.

Abstract: A programmable structure such as a write once read many (WORM) or one time programmable read only memories (OTPROM) is disclosed herein. The structure includes a first conductor (such as copper) positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that a programmable region of the dielectric is positioned between the resistor and the metal cap. The first conductor (including the metal cap), the programmable region of the dielectric, and the resistor form a metal-insulator-metal capacitor. Further, the programmable region of the dielectric is adapted to be permanently changed from heat produced by the resistor when a voltage difference is applied to the first and second ends of the resistor, respectively, through the first and second contacts.

Abstract: A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via opening for exposing a portion of a plurality of interconnect features; conformally depositing a first material layer over the via opening; depositing a second material layer over the first material layer, wherein the depositing overhangs a portion of the second material layer on a top portion of the via opening; and depositing a blanket layer of insulating material, where the depositing forms a plurality of fuse elements each having an airgap between the insulating material and the second material layer. The method further includes forming a plurality of electroplates in the insulator material connecting the fuse elements.

Abstract: The embodiments of the invention generally relate to fuse and anti-fuse structures and include a copper conductor positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that an antifuse element region of the dielectric is positioned between the resistor and the metal cap. The antifuse element region of the dielectric is adapted to change resistance values by application of a voltage difference between the resistor and the copper conductor/metal cap. The antifuse element region has a first higher resistance (more closely matching an insulator) before application of the voltage and a second lower resistance (more closely matching a conductor) after application of such voltage.

Abstract: A semiconductor device has a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a wiring formed in the insulating layer and an antifuse including first and second connecting portions coupled to the wiring. The anti fuse has a space provided between the first connecting portion and the second connecting portion and insulating the first connecting portion from the second connecting portion. The first connecting portion and the second connecting portion may be coupled by a conductive material disposed in the space.

Abstract: A planar inductor comprises a metal element (11-14) on a substrate (300, 310), said metal element being provided with at least one groove (20) extending along and into said element from at least one surface (2) of said element. Said groove or grooves (20) extend into the element in a direction substantially perpendicular to the surface of the substrate (300, 310), giving rise to a higher Q value and a lower serial resistance are also achieved. The inductor may comprise grooved (11, 13, 14) and non-grooved (12) layers. The invention also relates to a method of manufacturing the inductor.

Abstract: An integrated electronic circuit chip having an inductor placed above a protective layer for the metallization levels of the chip, the inductor having a thickness in a direction perpendicular to a surface of a substrate of the chip. The inductor has a reduced electrical resistance and a high quality factor. In addition, an inductor is realized at the same time as the pads for connecting the chip to a supporting board using flip-chip technology.

Abstract: In some embodiments, an individual sub-assembly containing a ceramic interposer, silicon voltage regulator, and array capacitor is presented. In this regard, an apparatus is introduced having a table-shaped ceramic interposer containing conductive traces, a silicon voltage regulator coupled with contacts on a first surface of the ceramic interposer, and an array capacitor coupled with contacts on a second surface of the ceramic interposer. Other embodiments are also disclosed and claimed.

Abstract: A display device includes a substrate, a capacitor lower electrode having a polycrystalline silicon film formed over the substrate and a contact metal film provided over the polycrystalline silicon film, a gate insulating film formed over the capacitor lower electrode and a gate metal electrode formed to a position opposing the capacitor lower electrode over the gate insulating film and formed to be disposed inner side of the capacitor lower electrode in top view.

Abstract: A capacitor can prevent a problem of step coverage in semiconductor device, caused by a thickness of an insulator film and an upper metal film included a metal-insulator-metal (MIM) capacitor, between the MIM capacitor region and its circumferential region. A capacitor in a semiconductor device includes a first metal film provided with a recess having a predetermined depth over a semiconductor substrate. An insulator film and a second metal film may be formed in the recess with a thickness corresponding to a depth of the recess. The insulator and second metal films are disconnected from an inner lateral side of the recess. A dielectric film including a plurality of plugs is in contact with the first and second metal films and the insulator film. A plurality of metal electrodes is in contact with the plugs over the dielectric film.

Abstract: Embodiments relate to a metal-insulator-metal (MIM) capacitor that may include a lower insulation layer where a capacitor lower metal layer is already formed, an intermediate structure, a first conductive structure, and a second conductive structure. The intermediate structure may include a first capacitor insulation pattern, a capacitor middle metal layer, a second capacitor insulation pattern, a capacitor upper metal layer, and an insulation pattern formed in sequence over the lower insulation layer. The first conductive structure may include a copper-based material and may be coupled between the capacitor upper metal layer and the capacitor lower metal layer. The second conductive structure may include a copper-based material and is coupled to the capacitor middle metal layer.