Abstract: A calibration standard specimen is provided to have formed therein calibrating patterns of a lattice shape discontinuously arrayed, and particular alignment patterns respectively disposed near the calibrating patterns so that the positioning of the specimen can be made to match the calibrating patterns to the measurement points.

Abstract: Electrostatic printing processes utilize corona-charging units. When those units wear out or become faulty, they need to be replaced. This embodiment provides a tool that can be used to remove a faulty electrode wire assembly from the unit. This same tool when loaded with a new wire assembly can insert a new wire assembly into the emptied corona charging unit, sometimes referred to as a dicorotron unit. The tool, therefore, is used both to remove or insert a wire assembly from or into a dicorotron unit.

Abstract: The present invention is a method to determine the cetane number of a diesel fuel containing a fatty acid alkyl ester including determining the infrared spectrum of the fuel and correlating the spectrum to the cetane number using a multivariate-based Mid-FTIR model. The fatty acid alkyl ester may be rapeseed methyl ester and the infrared spectrum includes the frequency ranges 4900-3500 cm?1 and 2200-1624 cm?1 or the frequency ranges 4900-3500 cm?1 2200-1800 cm?1 and 1700-1624 cm?1.

Abstract: A gas sensor comprises a body on which is mounted an optical source and a detector means sensitive to light from the source. The body further comprises a channel arranged to admit gas, the channel comprising an elongated groove having reflective surfaces defining a folded optical path for light from the source. The groove is arranged as a serpentine shape or spiral shape so that light from the source to detector travels around the groove being internally reflected within the shape.

Abstract: The amount of water vapor in natural gas at different levels, including at levels below 10 ppmv, is measured by directing a light from a quantum cascade laser at a frequency in the 5.01 to 5.03 micron or the 5.07 to 50.9 micron wavelength range through natural gas containing water vapor. A detector is configured to detect the intensity of light transmitted through the natural gas from the laser; and an analyzer is coupled to the detector for determining the level of water vapor in the natural gas.

Abstract: An optical system includes a light source 102 disposed for generating light preferably in a line. An optical element 104 includes a stepped reflecting surface 106 that includes reflecting surfaces 132 and step surfaces 130. The reflecting surfaces 132 have a metalized coating thereon so that the plurality of metalized reflecting surfaces reflect light therefrom. Each reflecting surface is a circular sector that increases in radius from an adjacent circular sector.

Abstract: An object is to provide a nondestructive inspection device of a low equipment cost, and a crane equipped with the nondestructive inspection device. The nondestructive inspection device is provided for a quay crane, on a transporting route of the container. The nondestructive inspection device irradiates radiation from radiation sources to a container which has entered into an inspection area, and detects radiation that has transmitted through the container using the same detector, and nondestructively inspects the entire inside of the container based on information of intensity of the radiation and information of detection position of the radiation.

Abstract: This invention is related to equipment and techniques for fast neutron activation analysis of explosives and /or other warfare agent. The techniques are based on 14 MeV fast neutrons from D-T fusion reaction, the kinematics of the nuclear reaction and fast coincidence between ?-particles of the D-T reaction and ?-quanta from fast neutron induced reactions. A fast neutron generator with effective target cooling and different operation modes provides high neutron yield, long life, and simple maintenance of the equipment and good geometric resolution of the directional neutron beam. High positional resolution of the directionally scanning neutron beam, high time resolution of the coincidence and high neutron yield provide the real time robust screen of explosives with high speed and/or high sensitivity, flexibility for big and small items and overall high probability of detection (PD) and low probability of false alarms (PFA). The remote video scan device also has zooming capability to change solid angle.

Abstract: A SPECT apparatus has a two-dimensional detector that detects radiations from RIs in a patient via a collimator. A correction processing unit corrects plural two-dimensional projection distributions with different projection angles, which are detected by the detector, on a three-dimensional frequency space according to plural correction functions corresponding to plural distances, respectively. Consequently, a fall in spatial resolution having dependency on distances between the respective RIs and the detector is reduced. A reconfiguring unit reconfigures a three-dimensional RI distribution from the plural two-dimensional projection distributions corrected.

Abstract: A system and method for generating a high-resolution image using a scanned-column projector is disclosed. The method includes the operation of generating a time-varying line image. A further operation includes collimating the time-varying line image in at least one plane. An additional operation involves scanning the collimated time-varying line image using a scan mirror. A further operation includes projecting the scanned collimated time-varying line image onto a surface. The scanned collimated time-varying line image is projected with at least one imaging element.

Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.

Abstract: An electron microscope has a spherical aberration correction system having transfer optics inserted between a spherical aberration corrector and the objective lens. The transfer optics consists of first and second lenses each of which is made of a magnetic lens. Electrons passing across a point located at distance r0 from the optical axis are made to enter the first lens within the multipole element. Electrons are made to enter the second lens at distance r1 of the incident point to the objective lens from the optical axis. The ratio M(=r1/r0) is greater than 1.

Abstract: A mass spectrometer capable of measuring under switching two ion sources at different pressure levels in which a sample gas separated by GC column is branched, and separately introduced to a first ion source (for example, APCI ion source) and a second ion source (for example, EI ion source) at a pressure level lower than that of the first ion source respectively. Preferably, the flow rate of the sample gas introduced to the APCI ion source is made more than the flow rate of the sample gas introduced to the EI ion source, so that the pressure for each of the ion sources can be maintained and analysis can be conducted by each ionization at a good balance in view of the sensitivity.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.

Abstract: Apparatus and process for UV irradiation and heat sterilization of fluid media, and in particular of liquids containing microorganisms and/or viruses.

Abstract: The invention relates to a thermal switch for particle-optical apparatus. In, for example, a cryo-TEM (transmission electron microscope), a sample 34 that is placed at an extremity 20 of a sample holder 7 can be maintained at, for example, the temperature of liquid nitrogen. There is a need to be able to inspect a sample at, for example, room temperature in a simple manner, without heating the microscope as a whole from the cryogenic temperature to room temperature. By using the thermal switch 40, this becomes possible. To this end, the thermal switch changes the thermal path between a cold source 22 in the apparatus and the extremity 20 of the sample holder 7, whereby, in one position, position 46a, a connection is made from the extremity 20 to the cold source 22, and, in the other position, position 46b, a connection is made to a portion 44 of the apparatus that is maintained at room temperature.

Abstract: The stimulable phosphor panel includes a rigid substrate, a stimulable phosphor layer formed on the rigid substrate and a transparent moisture-resistant protective layer formed on the stimulable phosphor layer. The stimulable phosphor layer is housed and sealed in an airtight area formed between the rigid substrate and the transparent moisture-resistant protective layer. The panel further includes a buffer space communicating with the airtight area capable of expansion/contraction. The buffer space is defined by a recess formed in the substrate, a ventilation hole connecting the recess with the airtight area and being formed in the substrate, and a flexible sheet covering an opening of the recess. Or, the buffer space has a volume variable within a range from 1/10 to twice of a sum of a spatial volume of the airtight area and a volume of the buffer space at 1 atm.

Abstract: A phosphor panel favorably employable for medical diagnosis of chest has a phosphor layer formed on a substrate by a gas phase-accumulation method, in which the phosphor layer is composed of a large number of phosphor columns standing parallel to each other, in which the phosphor columns have a mean diameter of 0.1 to 50 ?m at a top surface thereof, and there are no phosphor columns having a diameter larger than 200 ?m at the top surface.

Abstract: The present invention relates to a citizen's dosimeter. More specifically, the invention relates to a small, portable, personal dosimetry device designed to be used in the wake of a event involving a Radiological Dispersal Device (RDD), Improvised Nuclear Device (IND), or other event resulting in the contamination of large area with radioactive material or where on site personal dosimetry is required. The card sized dosimeter generally comprises: a lower card layer, the lower card body having an inner and outer side; a upper card layer, the layer card having an inner and outer side; an optically stimulated luminescent material (OSLM), wherein the OSLM is sandwiched between the inner side of the lower card layer and the inner side of the upper card layer during dosimeter radiation recording, a shutter means for exposing at least one side of the OSLM for dosimeter readout; and an energy compensation filter attached to the outer sides of the lower and upper card layers.

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract: An ultra precise polishing method includes controlling an irradiation time of a surface position of an object to be processed irradiated by a gas cluster ion beam. A profile is created and polished on the surface of the object to be processed by controlling irradiation of the gas cluster ion beam. An ultra precise polishing apparatus includes an irradiating device for irradiating a surface of an object to be processed by a gas cluster ion beam. A positioning device is provided for changing a surface position of the object to be processed, which is irradiated by the gas cluster ion beam by moving the irradiating device and the object to be processed relative to each other. A control device is provided for controlling the irradiation time of a surface position of the object to be processed irradiated by the gas cluster ion beam.

Abstract: A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern 16 serving as an object of length measurement in length measurement SEM and a second pattern 17 disposed to be spaced apart from the first pattern 16 and used for positioning and focusing of the length measurement SEM.

Abstract: The invention concerns a radiation source, comprising an anode (2), a cathode (3), an electric discharge gap (4) between the anode (2) and the cathode (3) and a gas input conduit (30) in the discharge gap (4). The gas input conduit (30) is electrically connected to the anode and the cathode. The invention is characterized in that the gas input conduit (30) is supplied with gas by a gas supply conduit (32), designed to form between its portion (42) connected to the gas input conduit (30) and another of its portions connected to a fixed potential, an electric impedance such that it counters the generation of electric discharges inside the gas input conduit (30).

Abstract: A radiation shield includes a radio-opaque drape which has an open area extending completely through the drape to provide a viewing site. Radiation control structure in the form of a vent system is located in the open area. The vent system includes a plurality of radio-opaque slats extending at least partially across at least a portion of the open area. The slats preferably extend outwardly away from the surface of the drape to facilitate the capturing of scattered radiation.

Abstract: A method of helping to prevent liquid reaching under a substrate is disclosed that includes introducing a gas at a bottom edge of the substrate so that a buffer is created at the edge of the substrate, helping to keep immersion liquid that is present at the top and edge of the substrate away from the bottom surface of the substrate.

Abstract: Methods for remotely detecting a gun muzzle flash, using frequency-optimized detection methods. Small explosive charges are best detected at I/R and visible wavelengths, using optical detectors, whereas large explosive charges may also be detected with antennas. Details of the time course and spectral properties of the flash can be used to distinguish gun muzzle flashes from other radiation.

Abstract: Apparatus for optically measuring a remote object comprises at least one source for projecting a plurality of discrete zones of electromagnetic radiation (for example laser spots) along a projection plane. Imaging apparatus images a plurality of reflections from the remote object. By spatially offsetting the imaging apparatus from the projection plane, easier discrimination and identification of the reflections is made possible.

Abstract: A radiation image detector includes an up-conversion phosphor layer for emitting fluorescence by irradiation with infrared light, a first electrode layer for transmitting the infrared light, the fluorescence and radiation carrying a radiation image, a photoconductive layer for recording, a charge storage portion, a photoconductive layer for readout, and a second electrode layer for transmitting the infrared light and the readout light. Radiation is recorded as latent image charge in the charge storage portion. The electric charge is read out from the charge storage portion by irradiating the photoconductive layer for readout with the readout light from the second electrode layer side. The up-conversion phosphor layer is irradiated with the infrared light from the second electrode layer side and remaining charge in the vicinity of the first electrode layer is erased by fluorescence emitted from the up-conversion phosphor layer by irradiation with the infrared light.

Abstract: Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula MxOy. In the chemical formula, the characters “M”, “O”, “x” and “y” indicate transition metal, oxygen, a transitional metal composition and an oxygen composition, respectively. The transition metal oxide layer pattern has excessive transition metal content in comparison to a stabilized transition metal oxide layer pattern. Methods of fabricating the non-volatile memory cells are also provided.

Abstract: A memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode.

Abstract: A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and the first stress type may be tensile, or the transistor structure may be an n-channel transistor structure and the first stress type may be compressive. The transistor structure can include a channel region that lies within an active region. An edge of the active region includes the interface between the channel region and the field isolation region. From a top view, the layer can include an edge the lies near the edge of the active region. The positional relationship between the edges can affect carrier mobility within the channel region of the transistor structure.

Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: An electronic device made by a process that includes forming a first layer over a substrate and placing a first liquid composition over a first portion of the first layer. The first liquid composition includes at least a first guest material and a first liquid medium. The first liquid composition comes in contact with the first layer and a substantial amount of the first guest material intermixes with the first layer. An electronic device includes a substrate and a continuous first layer overlying the substrate. The continuous layer includes a first portion in which an electronic component lies and a second portion where no electronic component lies. The first portion is at least 30 nm thick and includes a first guest material, and the second portion is no more than 40 nm thick.

Abstract: A semiconductor device can be manufactured with a high non-defect ratio, making it possible to easily guarantee the KGD (Known-Good-Die) of semiconductor chips, when configuring one packaged semiconductor device on which a plurality of semiconductor chips is mounted. Utilizing each semiconductor chip is made possible without limits on terminal position, pitch, signal arrangement, and so on. Protrusions provided to a semiconductor chip mounted sealing sub-board are attached to a package substrate. A plurality of semiconductor bare chips is disposed in a space formed between the semiconductor chip mounted sealing sub-board and the package substrate, making wiring possible.

Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.

Abstract: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film.

Abstract: The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask. Selected figure is FIG. 15.

Abstract: A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Abstract: To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a refractory metal, and the wiring line is further protected with an anodized film. As a result, it is possible to form the wiring line having the low resistance and the high heat resistance and to form a contact with an upper line easily.

Abstract: A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of the signal lines, has a pixel driving circuit region and an emission region. A pixel driving TFT positioned in the pixel driving circuit region, includes a semiconductor layer and a gate electrode corresponding to a predetermined portion of the semiconductor layer. The gate electrode is formed on a same layer as the signal lines. A pixel electrode, electrically connected to the pixel driving TFT, is positioned in the emission region.

Abstract: A thin film transistor array substrate is provided. The thin film transistor array substrate includes a substrate; a gate pattern of a gate electrode and a gate line connected to the gate electrode on the substrate; a main gate insulating film formed of an organic material to cover the gate pattern; a semiconductor pattern overlapping the gate line such that the main gate insulating film is disposed between semiconductor patter and the gate line; a source/drain pattern on the semiconductor pattern. The source/drain pattern has a data line crossing the gate line with the main gate insulating film therebetween, a source electrode and a drain electrode, Here, the source electrode, the drain electrode and the semiconductor pattern define a thin film transistor disposed at the intersection between the gate line and the data line.

Abstract: An array substrate for a display device includes an insulating substrate, a buffer layer which is disposed on the insulating substrate and is formed of silicon oxide with a refractive index equal to a refractive index of the insulating substrate, a first insulation layer which is disposed on the buffer layer and formed of silicon nitride, a second insulation layer which is disposed on the first insulation layer and formed of silicon oxide, a switching element including a semiconductor layer disposed on the second insulation layer, and a pixel electrode connected to the switching element.

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract: A reflection type light-emitting diode device of a kind capable of emitting rays of light to the outside after having been reflected by a reflecting surface includes a recessed casing (22) having a cavity defining the reflecting surface (15) and also having a pair of bearing grooves (17a and 17b) defined in a peripheral wall thereof, a light-emitting element (11), and first and second lead members each made up of a small width lead segment (12a or 12b) having a relatively small width and a large width lead segment (18a or 18b) having a relatively large width, with the light-emitting element (11) mounted on the small width lead segment (12a) of the first lead members. The first and second lead members are fitted to the recessed casing (22) with the small width lead segments (12a and 12b) thereof received immovably within respective bearing grooves (17a and 17b) in the recessed casing.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, ?-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, TbuSe, and DESe.

Abstract: An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has a surface profile (24B) defined by a plurality of columnar projections (24A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer (10). The p-electrode (16) is in contact with the p-GaN layer (10) at the top surface of each projection (24A).