Abstract: The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission.

Abstract: The present invention provides an electron beam measurement technique for measuring the shapes or sizes of portions of patterns on a sample, or detecting a defect or the like. An electron beam measurement apparatus has a unit for irradiating the patterns delineated on a substrate by a multi-exposure method, and classifying the patterns in an acquired image into multiple groups according to an exposure history record. The exposure history record is obtained based on brightness of the patterns and a difference between white bands of the patterns.

Abstract: A manipulator for use in e.g. a Transmission Electron Microscope (TEM) is described, said manipulator capable of rotating and translating a sample holder (4). The manipulator clasps the round sample holder between two members (3A, 3B), said members mounted on actuators (2A, 2B). Moving the actuators in the same direction results in a translation of the sample holder, while moving the actuators in opposite directions results in a rotation of the sample holder.

Abstract: A vein imaging apparatus of the present invention includes: a lens array to which a plurality of light receiving lenses are arranged in an array shape; a plurality of near-infrared light irradiation sources which are respectively arranged at opposing ends of the lens array and which irradiate a part of a living body with near-infrared light; an imaging element which generates a pickup image of a vein based on near-infrared light which is collected by the lens array and which is scattered in the living body and penetrates through the vein; and a brightness adjustment unit which adjusts brightness of the near-infrared light radiated from the near-infrared light irradiation source in accordance with a synchronization signal for controlling the imaging element and distance from the near-infrared light irradiation source.

Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

Abstract: A device for detecting electromagnetic radiation, with a diode structure acting absorbingly for the electromagnetic radiation and having a diode, and an ascertainer for ascertaining a measurement value for the absorbed electromagnetic radiation by means of at least two current/voltage measurements at the diode for different pairs of a diode current and a diode voltage.

Abstract: A detection module for detecting electro-magnetic radiation comprises a photosensor, a current integration circuit and an arithmetic unit fits the integration samples to a predetermined time dependency of the integrated current and computes an accumulated electrical charge accumulated over the integration time interval from the fit. Notably, the detection module is employed in an optical imaging apparatus to image e.g. a woman's breast by way of near-infrared light.

Abstract: A brain imager includes a compact ring-like static PET imager mounted in a helmet-like structure. When attached to a patient's head, the helmet-like brain imager maintains the relative head-to-imager geometry fixed through the whole imaging procedure. The brain imaging helmet contains radiation sensors and minimal front-end electronics. A flexible mechanical suspension/harness system supports the weight of the helmet thereby allowing for patient to have limited movements of the head during imaging scans. The compact ring-like PET imager enables very high resolution imaging of neurological brain functions, cancer, and effects of trauma using a rather simple mobile scanner with limited space needs for use and storage.

Abstract: An ionization detector having a grid of electrodes disposed perpendicular to an oscillating voltage. Charge released from an ionization event oscillates in the detector medium at the same frequency as the applied oscillating voltage. The electrode grid is configured to measure induced oscillating charge from the oscillating ionization charge in the detector. The detector signal is obtained from readout of the induced oscillating charge on the electrodes. Signal processing electronics processes the measured signal from the oscillating induced charge to derive energy and position information of the ionization event. A bias voltage is applied across the detector to further sweep the ionization charge from the active detection volume.

Abstract: A new type of structure for the deflection and crabbing of particle bunches in particle accelerators comprising a number of parallel transverse electromagnetic (TEM)-resonant) lines operating in opposite phase from each other. Such a structure is significantly more compact than conventional crabbing cavities operating the transverse magnetic TM mode, thus allowing low frequency designs.

Abstract: The method includes scanning a sample in at least one first scan line using a first charged particle beam probe; scanning the sample in at least one second scan line using a second charged particle beam probe, and scanning the sample in at least one third scan line using the first charged particle beam probe. The first or second charged particle beam probe is defocused by a control module of the imaging system through adjusting a condenser lens module, an objective lens module, a sample stage of the imaging system, or their combination. An image of the sample is selectively formed from the first, second and third scan lines. The first and the second charged particle beams induce a first charging condition and a second charging condition on the sample surface respectively. The second charging condition can enhance, mitigate, eliminate, reverse or have no effect on the first charging condition.

Abstract: The present invention provides a system for water treatment. The system includes a chamber, a UV light source, and a housing. The chamber has an inlet for receiving ozone mixed water and a transparent portion configured to allow UV light to pass. The UV light source has a protective shell that comprises a first portion and a second portion, the first and second portions configured to pass UV light at a first and second wavelength, respectively. The housing having an air inlet and an air outlet, the housing configured to secure the UV source and to receive a portion of the chamber, wherein the UV source and the chamber is affixed to the housing such that the transparent portion of the chamber is exposed to the first portion of the protective shell, thereby exposing the ozone mixed water to UV light with the first wavelength, and wherein the second wavelength convert oxygen molecules from the air inlet into ozone molecules.

Abstract: Sponge sanitizing enclosure with a front cover, a rear cover, an inner back plate, a base housing, a push plate, a push button, a UV lamp, electronics to support the UV lamp, a battery power supply, a translucent sponge, and a hinge member. The front and rear cover each being dish shaped and forming a hollow housing and being joined at their base by the hinge member. The inner back plate forms a bisection of the front cover and the rear cover. The UV light is located between the rear cover and the inner back plate. The front cover includes a centrally located aperture that accepts the push button which is fixedly attached to the push plate. The space between the push plate and the inner back plate accommodates the translucent sponge. The base housing encloses the electronics and the battery power supply that support the UV lamp.

Abstract: A fluorescence microscope 11 includes an objective lens 101, a dichroic mirror 102, a half mirror 105, a mirror 106, a laser light source 111, an ND filter 112, a beam expander 113, a mirror 114, a spatial light modulator 115, a lens 131, a band pass filter 132, a spatial light modulator 133, and a detector, etc. The spatial light modulator 115 can vary its spatial light modulation, and can set the number, positions, and shapes of regions to be irradiated with excitation light in the determined specimen 1 by irradiating the determined specimen 1 with spatially modulated excitation light via the subsequent optical system.

Abstract: A first light source emits a light signal along a measurement optical path that includes a sample and a second light source emits a light signal along a dummy measurement optical path. A measurement circuit receives the light signals and provides outputs separated in time which are indicative of the phase of the respective light signals. A phase shift is induced in light in the measurement optical path by the sample. A reference circuit receives a signal indicative of the phase of the light signals emitted by the first and second light sources. Circuitry compares the phases of light output from the two circuits to provide output indicative of a first measured phase difference during operation of the first light source. Correction is applied to this measurement by taking a similar phase difference measurement during operation of the second light source and comparing the two phase differences.

Abstract: The present invention provides a color indicator dosimeter system to detect and quantify a dosage of ionizing radiation in a wide range wherein said system comprises phenolic glycoside as one of the components. The present invention also relates to a method for using dosimeter system as described hereinabove for detecting and quantifying a dosage of ionizing radiation in a wide range.

Abstract: A low-volume biomarker generator for producing ultra-short lived radiopharmaceuticals. The low-volume biomarker generator system includes a low-power cyclotron and a radiochemical synthesis system. The cyclotron of the low-volume biomarker generator is optimized for producing radioisotopes useful in synthesizing radiopharmaceuticals in small quantities down to approximately one (1) unit dose. The cyclotron incorporates permanent magnets in place of electromagnets and/or an improved rf system to reduce the size, power requirements, and weight of the cyclotron. The radiochemical synthesis system of the low-volume biomarker is a small volume system optimized for synthesizing the radiopharmaceutical in small quantities of approximately one (1) unit dose.

Abstract: A multi-light apparatus (10) for primary use in dental or medicinal operatory workspaces and for interconnection with a modular operating chair (12), so as to form the headrest thereof, preferably includes first and second radiation sources (36,72) and a selection mechanism (70) for selecting a desired radiation source, a rigidly flexible light pipe (16) that may be alternatively coupled to each light source (36,72) and is configured to transmit selected radiation to a patient (14), a reflective surface (78) configured to direct the selected radiation to the pipe (16), a power supply (50), a cooling fan (56), and at least one potentiometer (66,68) for varying the voltage delivered to the sources (36,72) and fan (56).

Abstract: Memory devices are described along with manufacturing methods. An embodiment of a memory device as described herein includes a conductive bit line and a plurality of first electrodes. The memory device includes a plurality of insulating members, the insulating members having a thickness between a corresponding first electrode and a portion of the bit line acting as a second electrode. The memory device further includes an array of bridges of memory material having at least two solid phases, the bridges contacting respective first electrodes and extending across the corresponding insulating member to the bit line. The bridges define an inter-electrode path between the corresponding first electrode and the bit line defined by the thickness of the insulating member.

Abstract: Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.

Abstract: A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract: A nonvolatile memory element comprising: a first electrode 2; a second electrode 6 formed above the first electrode 2; a variable resistance film 4 formed between the first electrode 2 and the second electrode 6, a resistance value of the variable resistance film 4 being increased or decreased by an electric pulse applied between the first and second electrodes 2, 6; and an interlayer dielectric film 3 provided between the first and second electrodes 2, 6, wherein the interlayer dielectric film 3 is provided with an opening extending from a surface thereof to the first electrode 2; the variable resistance film 4 is formed at an inner wall face of the opening; and an interior region of the opening which is defined by the variable resistance film 4 is filled with an embedded insulating film 5.

Abstract: A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer.

Abstract: A semiconductor device and a method of manufacturing the same with easy formation of a phase change film is realized, realizing high integration at the time of using a phase change film as a memory element. Between MISFET of the region which forms one memory cell, and MISFET which adjoined it, each source of MISFET adjoins in the front surface of a semiconductor substrate, insulating. And the multi-layer structure of a phase change film, and the electric conduction film of specific resistance lower than the specific resistance is formed in the plan view of the front surface of a semiconductor substrate ranging over each source of both MISFET, and a plug and a plug stacked on it. The multi-layer structure functions as a wiring extending and existing in parallel on the surface of a semiconductor substrate, and an electric conduction film sends the current of a parallel direction on the surface of a semiconductor substrate.

Abstract: A memory cell including a memory element and a non-ohmic device (NOD) that are electrically in series with each other is disclosed. The NOD comprises a semiconductor based selection device operative to electrically isolate the memory element from a range of voltages applied across the memory cell that are not read voltages operative read stored data from the memory element or write voltages operative to write data to the memory element. The selection device may comprise a pair of diodes that are electrically in series with each other and disposed in a back-to-back configuration. The memory cell may be fabricated over a substrate (e.g., a silicon wafer) that includes active circuitry. The selection device and the semiconductor materials (e.g., poly-silicon) that form the selection device are fabricated above the substrate and are integrated with other thin film layers of material that form the memory cell.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.

Abstract: In a nitride semiconductor light-emitting device (11), an emission region (17) has a quantum well structure (19), and lies between an n-type gallium nitride semiconductor region (13) and a p-type gallium nitride semiconductor region (15). The quantum well structure (19) includes a plurality of first well layers (21) composed of InxGa1-xN, one or a plurality of second well layers (23) composed of InyGa1-yN, and barrier layers (25). The first and second well layers (21) and (23) are arranged in alternation with the barrier layers (25). The second well layers (23) lie between the first well layers (21) and the p-type gallium nitride semiconductor region (15). The indium component y of the second well layers (23) is smaller than indium component x of the first well layers (21), and the thickness DW2 of the second well layers (23) is greater than the thickness DW1 of the first well layers (21).

Abstract: The invention relates to a single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.

Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Abstract: Germanium on insulator (GOI) semiconductor substrates are generally described. In one example, a GOI semiconductor substrate comprises a semiconductor substrate comprising an insulative surface region wherein a concentration of dopant in the insulative surface region is less than a concentration of dopant in the semiconductor substrate outside of the insulative surface region and a thin film of germanium coupled to the insulative surface region of the semiconductor substrate wherein the thin film of germanium and the insulative surface region are simultaneously formed by oxidation anneal of a thin film of silicon germanium (Si1-xGex) deposited to the semiconductor substrate wherein x is a value between 0 and 1 that provides a relative amount of silicon and germanium in the thin film of Si1-xGex.

Abstract: A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.

Abstract: A donor substrate for forming a nano conductive film includes a base substrate and a transferring layer that is disposed on the base substrate. The transferring layer includes nano conductive particles and an organic semiconductor. A method of patterning a nano conductive film is provided, wherein a donor substrate in which nano conductive particles are dispersed by employing an organic semiconductor having low molecular weight as a binder is prepared, and nano conductive particles are patterned on a receptor substrate by employing the donor substrate. The method can be used to prepare patterns of various devices including a display device such as an OLED and an OTFT. Such a device can be prepared simply and economically by preparing a device comprising nano conductive particles and an organic semiconductor in wet basis even without deposition.

Abstract: An organic electronic device which has stable physical properties and which allows easy production is provided. The organic electronic device has a conductive path including fine particles, a first organic semiconductor molecule which has a first conductive type and binds at least two of the fine particles together, and a second organic semiconductor molecule which has a second conductive type and is captured in a state of noncovalent bond in a molecule recognition site that exists among the fine particles.

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

Abstract: Described herein is a field ionization and electron impact ionization device consisting of carbon nanotubes with microfabricated integral gates that is capable of producing short pulses of ions.

Abstract: A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A self-aligned, thin-film, top-gate transistor and method of manufacturing same are disclosed. A first print-patterned mask is formed over a metal layer by digital lithography, for example by printing with a phase change material using a droplet ejector. The metal layer is then etched using the first print-patterned mask to form source and drain electrodes. A semiconductive layer and an insulative layer are formed thereover. A layer of photosensitive material is then deposited and exposed through the substrate, with the source and drain electrodes acting as masks for the exposure. Following development of the photosensitive material, a gate metal layer is deposited. A second print-patterned mask is then formed over the device, again by digital lithography. Etching and removal of the photosensitive material leaves the self-aligned top-gate electrode.

Abstract: An array substrate for a liquid crystal display device includes a gate line and a data line crossing each other on a substrate to define a pixel region, an insulating layer between the gate line and the data line, a gate electrode extending from the gate line, and a transistor in the pixel region having an active layer on the insulating layer, ohmic contact layers of a first material that are adjacent to ends of the active layer, buffer layers of a second material, which is different from the first material, on the ohmic contact layers, a source electrode contacting one of the buffer layers and a drain electrode contacting another one of the buffer layers, wherein the active layer is in an island shape over the gate electrode and within a boundary defined by a perimeter of the gate electrode.

Abstract: An electronic-ink display apparatus is provided. The electronic-ink display apparatus includes a thin film transistor (TFT) array substrate, an electronic-ink layer, a common electrode, a second substrate and an edge sealant. The TFT array substrate includes a first substrate and a dielectric layer located above the first substrate. The electronic-ink layer, common electrode and second substrate are located above TFT array substrate in sequence. The edge sealant surrounds the electronic-ink layer and at least one part of the edge sealant is not overlaid above the dielectric layer.

Abstract: An array substrate includes a substrate, a gate line on the substrate, a data line crossing the gate line to define a pixel region, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region, and a common electrode including first, second, third, fourth and fifth portions, wherein the first and second portions are disposed at both sides of the data line, each of the third and fourth portions is connected to the first and second portions, and the fifth portion is connected to the second portion and is extended into a next pixel region adjacent to the pixel region.

Abstract: A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.

Abstract: A thin film transistor array panel and a method of its manufacture are presented. The thin film transistor array panel according to an embodiment includes a substrate, a gate line extending in a first direction on the substrate, a data line extending in a second direction on the substrate and intersecting and insulated from the gate line, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line and an output terminal, a color filter formed on the thin film transistor, a light blocking member formed on the thin film transistor, defining the space for storing the color filter, and including a first protection portion surrounding at least the region of the output terminal of the thin film transistor, and a pixel electrode formed on the light blocking member and the color filter and contacting the region of the output terminal surrounded by the first protection portion of the light blocking member.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode.

Abstract: The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

Abstract: A method for manufacturing an organic light emitting diode display includes disposing a crystalline semiconductor layer on a substrate, disposing a gate line, a driving input electrode, and a driving output electrode on the crystalline semiconductor layer, the gate line including a switching control electrode, patterning the crystalline semiconductor layer using the gate line, the driving input electrode, and the driving output electrode as a mask, disposing a gate insulating layer and an amorphous semiconductor layer on the gate line, the driving input electrode, and the driving output electrode, disposing a data line, a driving voltage line, a switching output electrode, and a driving control electrode on the amorphous semiconductor, the data line including a switching input electrode, disposing a pixel electrode connected to the driving output electrode, disposing a light emitting member on the pixel electrode, and disposing a common electrode on the light emitting member.

Abstract: A backlight device includes a first substrate, and an LED thin-film layered structure (epitaxially grown inorganic material layers) fixed to a surface of the first substrate. An anode electrode and a cathode electrode are formed on the LED thin-film layered structure. An anode driver IC and a cathode driver IC are provided for driving the LED thin-film layered structure. A wiring structure electrically connects the anode driver IC and the anode electrode of the LED thin-film layered structure, and electrically connects the cathode driver IC and the cathode electrode of the LED thin-film layered structure. A second substrate has an optical transparency and is disposed to face the surface of the first substrate on which the LED thin-film layered structure is formed. A phosphor is formed on a surface of the second substrate facing the first substrate and is disposed on a position corresponding to the LED thin-film layered structure.

Abstract: Au base electrode materials have fatal disadvantages, such as inferior adhesion to diamond, low mechanical strength, and low thermal stability. A diamond UV sensor is provided which includes a photoconductive or Schottky optical sensor element having two-terminal electrodes and detects light irradiating a light-receiving portion according to the changes in electrical resistance or photo-induced current of the material of the light-receiving portion. The sensor element includes diamond having a surface from which a conductive surface layer has been removed, and the surface of the diamond is used as the light-receiving portion and a junction interface with the electrodes. The electrodes include a rectifying and an ohmic electrode. The rectifying electrode is transparent electrode capable of transmitting light and is defined by a single layer made of a nitride of a refractory metal element.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.