Abstract: The present invention relates to a method of manufacturing water resistant aluminum nitride powder, the method comprises; in a solvent, performing phosphoric acid compound treatment in which at least one phosphoric acid compound selected from the group consisting of phosphoric acid, metal salts of phosphoric acid and organic phosphoric acid having an organic group with 12 or less carbon atoms is contacted with aluminum nitride powder dispersed in the solvent so that the ratio of median diameter/primary particle diameter is 1.4 to 5, thereby the phosphoric acid compound is present on the surface of the aluminum nitride powder at a rate of 0.5 to 10 mg/m2 in the orthophosphoric acid ion equivalence.

Abstract: Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Abstract: The present invention provides a radical composition capable of suppressing elution of electrode components in an electrolyte solution when used in an electrode for a secondary battery, and a battery using the radical composition. The present invention relates to a radical composition including a pyrroline nitroxide polymer and polyethylene glycols.

Abstract: Disclosed herein are indane bisphenol monomer units, and polymers derived from such monomer units. Also disclosed herein are blends including such polymers, articles made from such polymers and blends, methods of using such monomers, polymers, and blends, and processes for preparing such monomers, polymers, and blends.

Abstract: The invention relates to a liquid-crystalline medium comprising at least one compound of the formula I, in which R1 has the meanings indicated in claim 1, and to the use thereof in liquid-crystalline media and in electro-optical liquid-crystal displays.

Abstract: A liquid crystal composition in which deterioration of viscosity that is associated with an increase in ?n and an increase in ?? is suppressed, and a liquid crystal display element having a markedly improved response speed by using the relevant liquid crystal composition. The liquid crystal composition has a large value of ?n and negative ??, and have large absolute values thereof. Also, the liquid crystal composition has low ?, has excellent liquid crystal properties, and exhibits a liquid crystal phase that is stable in a wide temperature range. Furthermore, since the liquid crystal composition is chemically stable to heat, light, water and the like, the liquid crystal composition is capable of low voltage driving, and is practically useful and highly reliable.

Abstract: The present invention relates to compounds of the formula I to the use thereof for high-frequency components, to liquid-crystalline media comprising the compounds, and to high-frequency components, in particular antennae, especially for the gigahertz range, comprising these media. The liquid-crystalline media serve, for example, for the phase shifting of microwaves for tuneable “phased-array” antennae.

Abstract: The present invention relates to a set of multi-doped cerium-activated scintillation materials of the solid solutions on the basis of the rare earth silicate, comprising lutetium and having compositions represented by the chemical formulas: (Lu2?w?x+2yAwCexSi1?y)1?zMexJjOq and (Lu2?w?x?2yAwCexSi1+y)1?zMezJjOq. The invention is useful for detection of elementary particles and nuclei in high-energy physics, nuclear industry; medicine, Positron Emission Tomography (TOF PET and DOI PET scanners) and Single Photon Emission Computed Tomography (SPECT), Positron Emission Tomography with Magnetic Resonance imaging (PET/MR); X-ray computer fluorography; non-destructive testing of solid state structure, including airport security systems, the Gamma-ray systems for the inspection of trucks and cargo containers.

Abstract: The invention relates to novel polymers containing one or more benzo[1,2-b:4,5-b?]dithiophene-4,8-dione repeating units, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

Abstract: A system includes a gasifier. The gasifier includes a chamber, a first nozzle, and a second nozzle. The first nozzle is configured to output a first fuel and a first oxidant to create a mixture that combusts in a combustion-reduction zone of the chamber. The second nozzle is configured to output a reduction promoter into the combustion-reduction zone to reduce combustion products in the combustion-reduction zone of the chamber.

Abstract: Metal-organic frameworks of the family M2 (2,5-dioxido-1,4-benzenedicarboxylate) wherein M=Mg, Mn, Fe, Co, Cu, Ni or Zn are a group of porous crystalline materials formed of metal cations or clusters joined by multitopic organic linkers that can be used to isolate individual gases from a stream of combined gases. This group of adsorbant materials incorporates a high density of coordinatively-unsaturated MII centers lining the pore surfaces. These adsorbents are particularly suited for selective carbon dioxide/monoxide adsorption via pressure swing adsorption near temperatures of 313 K since they selectively adsorb carbon dioxide at high pressures in the presence of hydrogen, and desorb carbon dioxide upon a pressure decrease. The redox-active FeII centers in Fe2(dobdc) can be used for the separation of O2 from N2 and other separations based on selective, reversible electron transfer reactions.

Abstract: A composition for extending the usable life of a razor blade includes a vegetable oil, for example sunflower oil, Aloe Vera gel, and Petrolatum. The composition is used by application of one to several drops of the composition to a razor blade after use followed by storage of the razor blade in the normal manner.

Abstract: Radiation structures formed from a composition including calcium silicate, magnesium or calcium oxides and an acid phosphate are provided. The composition may also include fly ash or kaolin.

Abstract: A method of manufacturing a non-firing type electrode comprising steps of: (a) applying on a substrate a photosensitive paste comprising, (i) a conductive powder, (ii) an organic polymer comprising acrylic polymer and hydroxypropyl cellulose (HPC) at weight ratio of 5:1 to 2:1, (iii) a photopolymerization initiator, and (iv) a photopolymerizable compound; b) exposing the applied photosensitive paste to light; and (c) developing the exposed photosensitive paste by an aqueous solution, wherein the electrode comprises fine line of width of 5 to 30 ?m.

Abstract: The present disclosure pertains to an aqueous pigment dispersion containing a pigment as colorant, a polymeric dispersant and a hydroxyl-substituted amino acid. The present disclosure further pertains to an ink containing an aqueous vehicle and the aqueous pigment dispersion, and ink sets with at least one of the inks containing the pigment dispersion.

Abstract: The inventions disclosed, described, and/or claimed herein relate to bis(sulfonyl)biaryl compounds that are useful as electron transporting materials useful for making novel organic electronic devices, including the electron transport layers of organic light-emitting diodes (“OLEDs”), or as an electron transporting guest for phosphorescent guests in the emissive layer of OLEDs.

Abstract: A method of manufacturing nanoparticles, nanoparticles, and an organic light emitting diode, a solar cell, a printing ink, a bioimaging device, and a sensor including the same are provided. The method of manufacturing nanoparticles of a target material includes mixing graphene oxide with an aqueous solvent to prepare an aqueous solution, mixing the target material with an organic solvent to prepare an organic solution, mixing the aqueous solution with the organic solution, and preparing nanoparticles of the target material by the graphene oxide.

Abstract: In production of electrode paste, powder and solvent are separately injected into a hollow exterior component, the powder and the solvent are transferred to a downstream side in a transfer direction by rotation of two rotary shafts supported by the exterior component in a state where the rotary shafts are located parallel to each other at a predetermined interval, a mixture is produced by mixing the powder and the solvent by rotation of the rotary shafts without applying a shearing force, which is higher than or equal to a predetermined shearing force, to the powder, and producing electrode paste by kneading the mixture through application of a shearing force, which is higher than the shearing force that is applied in the mixing step, to the mixture through rotation of the rotary shafts.

Abstract: The present invention relates to a compound of the formula (I), to the use of the compound in an electronic device, and to an electronic device comprising a compound of the formula (I). The present invention furthermore relates to a process for the preparation of a compound of the formula (I) and to a formulation comprising one or more compounds of the formula (I).

Abstract: Disclosed is a process to reduce mixtures of at least one metal halide by molten metal reduction of the liquid phase metal halide in an alkali or alkaline earth metal to form a reaction product comprising at least one metal mixture and a halide salt coating, in which the at least one metal halide is in stoichiometric excess to the molten metal reductant and wherein the reductant is consumed in the reaction and does not need to be removed at the end of the reaction.

Abstract: Embodiments may pertain to methods for preparing a transition metal oxide.

Abstract: A method of manufacturing an electrical conductive mayenite compound, including, (1) a step of preparing a calcinated powder including calcium oxide and aluminum oxide at a ratio of 13:6 to 11:8 (based on molar ratio as converted to CaO:Al2O3), and (2) a step of placing a body to be processed including the calcinated powder prepared in the step (1) in the presence of carbon monoxide gas and aluminum vapor supplied from the aluminum source without contacting the aluminum source, and holding the body to be processed at a temperature range of 1220° C. to 1350° C. under reducing atmosphere.

Abstract: Disclosed in the invention is a plastic-based composite material capable of conducting electricity and shielding electromagnetic wave. The plastic-based composite material is prepared from the following raw materials in parts by mass: 40 to 80 parts of plastic matrix, 5 to 15 parts of surface modified high-efficiency conductive agent, 10 to 40 parts of ferroferric oxide, 5 to 10 parts of compatibilizer, and 0.5 to 1 part of antioxidant. The product has good conductive property and mechanical properties, can shield the electromagnetic wave in a high degree, and can be widely applied to the fields of electronic consumer goods, remote monitoring/communication, military, and field/indoor power supply.

Abstract: A lanthanum boride sintered body 10 includes a phase 16 including lanthanum and silicon at grain boundaries 14 between crystal grains 12 of lanthanum boride. In this lanthanum boride sintered body 10, the phase 16 exists in various configurations such as a phase 16a present at a triple point of grain boundary 14, and a phase 16b present along the grain boundary 14. This phase 16 is based on a lanthanum silicide (represented by the composition formula LaSix (0<x?2)). The lanthanum boride sintered body 10 is fabricated through a sintering step of sintering a lanthanum boride green compact by press-free sintering in an inert atmosphere or under vacuum in the presence of a silicon-containing material around and/or within the green compact. The lanthanum boride sintered body 10 having this structure exhibits a relative density of not less than 92%, and more preferably not less than 94%.

Abstract: A composite material comprising 10-98 wt. % of a bio-based particulate or fibrous filler and at least 2 wt. % of a polyester derived from an aliphatic polyalcohol with 2-15 carbon atoms and a polyacid, wherein the polyacid comprises at least 10 wt. % of tricarboxylic acid. Preferably, the filler is in the form of particles, fibers, and/or random or non-random layers. A plant-based filler may be used, in particular a cellulosic or lignocellulosic material, more in particular one or more materials selected from wood chips, wood flakes, sawdust, pulp, e.g., pulp of (recycled) paper or other fiber pulp, and plant-derived fibers such as cotton, linen, flax, and hemp. An animal-derived filler, in particular an animal-derived fiber such as wool, hair, silk, or feathers may also be used. Preferably the polyalcohol is selected from one or more of glycerol, sorbitol, xylitol, mannitol, 1,2-propane diol, 1,3-propane diol, and 1,2-ethane diol, in particular glycerol.

Abstract: An extension has a main extension body with a first extension end and a second extension end, an extension passage is defined there between. An annular extension recess is formed about the extension passage at the first extension end. An annular extension flange is formed about the extension passage at the second extension end. A saddle has a main saddle body with a first saddle end and a second saddle end with a saddle passage defined there between. An annular saddle flange is formed about the saddle passage at the second saddle end. A fastener has an elongate shaft with a first shaft end and a second shaft end. A head is at the first shaft end. A fastening engagement is about the second shaft end. The shaft is configured to be disposed within the saddle passage and the extension passage.

Abstract: A strap tensioning system is provided. The system includes a frame comprising a first side wall that retains a ledge. A core shaft retains a flexible shaft and is rotatable by a drive shaft as urged by a crank handle. The crank handle supports an arm that is pivotable with respect to the crank handle, between a stowed position where the arm is substantially parallel to the crank handle, and a locking position where the arm is substantially perpendicular to the crank handle. The crank handle and arm are configured such that the arm disposed within the ledge when the crank handle is in registry with the ledge and the arm is in the locked position, thereby preventing rotation of the crank handle with respect to the frame.

Abstract: The traction system comprises a plurality of substantially parallel tendons (2) movable for pulling a load, the tendons being disposed according to a pattern in a plane perpendicular to the tendons; and at least one deviator (3) for guiding the tendons, the deviator accommodating an angular deflection of the plurality of tendons. The deviator includes a support structure (4) and a plurality of segments (5) each having an inner surface facing a convex surface of the support structure, front and rear surfaces and a plurality of channels extending from the front surface to the rear surface. The channels are disposed according to said pattern in the front and rear surfaces of each segment, each tendon being received in a respective one of the channels. At least some of the segments (5) have their inner surfaces bearing on the convex surface of the support structure (4) in response to tensile forces applied to the tendons.

Abstract: A level winding drum winch has a frame within which a rotatable drum is mounted. The frame is supported upon a pair of tracks upon which the frame may be slid from side to side. A motor connected to the drum rotates the drum for winding or paying out a cable wrapped around the drum. A feed screw attached within the frame is actuated by the motor to slide the frame from side to side as the cable is wound upon the drum. Thus, the cable is continuously directed at a substantially perpendicular angle, without bending or kinking, towards or away from the drum thereby forming a level winding and avoiding damage to the cable. The winch is particularly useful in handling relatively fragile composite cables useful for simultaneously towing and electronically communicating data with the objects towed by a boat.

Abstract: This mobile, aircraft engine stand provides mobility and ease of operation by one person. The stand includes a frame, a pair of vertical jack screws vertically mounted on the frame and a precision rail system configured to allow for stable and efficient linear motion. A pair of quick change, engine lifting arms are attached to the pair of vertical jack screws; and an electrical control and control panel make unloading, transporting, assembling and moving an engine a one person operation. A plurality of casters allows for easy swiveling of the stand.

Abstract: Hydraulic jack (1, 1?) comprising a main body (2), an articulated lifting arm (3) and a hydraulic cylinder (4) connected to the main body (2) by a first articulated connection (5) and to the lifting arm (3) by a second articulated connection (6), where the hydraulic jack (1, 1?) comprises a lever member (7, 7?) disposing of at least one locking zone (14) for receiving an element that is solidary to the lifting arm (3) and that serves as a stop, where the lever member (7, 7?) is articulately connected to the first articulated connection (5). The element solidary to the lifting arm (3) that serves as a stop and is capable of lodging in at least one locking zone (14) is comprised in the second articulated connection (6). This way, a mechanical locking system is provided which presents optimal performance while minimizing the number of necessary components.

Abstract: A fence post cap comprising an apparatus for holding small objects for entertaining (e.g. food and beverages). In a preferred embodiment, the cap comprises a small table, such as a round, square, or rectangular table, and/or a serving bowl, affixed to the top of a fence post that is part of an outdoor deck railing. The apparatus may be permanently affixed to the post, or non-permanently affixed wherein it may be easily exchanged with another cap suitable to an occasion. The cap may further comprise a means to attach the cap to the fence post, such as a base that affixes to the underside of the table/bowl and slides over the fence post. In a preferred embodiment, the base comprises a collar affixed to the underside of a pan that holds the apparatus (table top), and wherein the pan is the same dimensions as the table top.

Abstract: A fence includes a plurality of bases, each base having a body having a floor, a top wall, side walls and end walls defining an interior chamber; a first projection extending from one of the end walls and having a top wall; and a second projection extending from another one of the end walls and having a bottom wall; wherein the bottom wall of the second projection and the top wall of the first projection are both configured to receive a pole and wherein the first projection of a first base of the bases can overlap the second projection of a second base of the bases when the floor of the first and second bases are resting on a common surface. The fence further includes a plurality of poles, each inserted into and maintained erect by one of the bases; and a mesh fencing material tensioned between the poles.

Abstract: A play yard includes: a plurality of side panels coupled to one another; a gate panel coupled to two of the plurality of side panels to create an enclosed space, the gate panel including: a panel frame defining an opening; a gate mounted to the panel frame in the opening to swing from a closed position to an open position; a first locking mechanism on the gate to hold the gate in the closed position; and a second locking mechanism on the panel frame to hold the gate in the closed position.

Abstract: A connection device is provided including a body portion and at least first and second attachment means for the attachment of the device to or between two or more objects in use. Adjustment means are provided to allow the distance between the at least first and second attachment means to be adjustable in use.

Abstract: A nonvolatile memory according to an embodiment includes a first wiring line; a second wiring line arranged above the first wiring line and extending in a direction crossing the first wiring line; and a resistance change layer arranged in an intersection region of the first wiring line the second wiring line, the second wiring line including a first member extending in the direction in which the second wiring line extends, and an electrode layer containing a metal element arranged on a side surface of the first member along the direction in which the second wiring line extends, a lower surface of the electrode layer being in contact with an upper surface of the resistance change layer.

Abstract: A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The first liner layer is configured by a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer. The stopper layer is acted upon by an internal stress in a compressive direction at room temperature.

Abstract: According to one embodiment, a nonvolatile memory device includes a first wiring, a second wiring, and a memory cell provided between the first wiring and the second wiring. The memory cell includes a memory layer, a rectifying element layer, and a protective resistance layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type.

Abstract: Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Abstract: A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.

Abstract: According to one embodiment, a memory device includes a first electrode, a first resistance change layer, a first insulating section, a second electrode and an intermediate layer. The first resistance change layer is provided on the first electrode. The first insulating section is provided on the first resistance change layer. The second electrode is provided on the first resistance change layer. The second electrode is in contact with the first resistance change layer. The intermediate layer is provided between the second electrode and the first insulating section. The intermediate layer is in contact with the second electrode and the first insulating section.

Abstract: A resistive memory device and a method for manufacturing the same are provided. The resistive memory device includes a lower electrode, a variable resistive layer formed on the lower electrode and configured so that the volume thereof is contracted or expanded according to temperature, and an upper electrode formed on the variable resistive layer. At least a portion of the lower electrode is configured to be electrically connected to the upper electrode.

Abstract: This technology relates to a semiconductor device and a method of manufacturing the same. A semiconductor device may include a line layer formed over a substrate, and connection structures each configured to include a first metal layer pattern, a barrier layer pattern, and a second metal layer pattern sequentially stacked over the line layer, for bonding another substrate to the substrate. In accordance with this technology, abnormal silicidation may be prevented because the barrier layer is formed at the bonding interface of the substrates, and the bonding energy of the substrates may be improved by titanium (Ti)-silicon (Si) bonding.

Abstract: A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer.

Abstract: Three dimension memory arrays and methods of forming the same are provided. An example three dimension memory array can include a stack comprising a plurality of first conductive lines separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines, such that the at least one conductive extension intersects a portion of at least one of the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension.

Abstract: Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines.

Abstract: Memory devices and methods for forming a device are disclosed. A substrate prepared with a lower electrode level with bottom electrodes is provided. Fin stack layers are formed on the lower electrode level. Spacers are formed on top of the fin stack layers. The spacers have a width which is less than a lithographic resolution. The fin stack layers are patterned using the spacers as a mask to form fin stacks. The fin stacks contact the bottom electrodes. An interlevel dielectric (ILD) layer is formed on the substrate. The ILD layer fills spaces around the fin stacks. An upper electrode level is formed on the ILD layer. The upper electrode level has top electrodes in contact with the fin stacks. The electrodes and fin stacks form fin-type memory cells.

Abstract: First, a trench penetrating first conductive layers and interlayer insulating layers is formed. Next, a column-shaped conductive layer is formed to fill the trench via a side wall layer. Then, after formation of the side wall layer, by migration of oxygen atoms between the side wall layer and the first conductive layers or migration of oxygen atoms between the side wall layer and the interlayer insulating layers, a proportion of oxygen atoms in the side wall layer adjacent to the interlayer insulating layers is made larger than a proportion of oxygen atoms in the side wall layer adjacent to the first conductive layers, whereby the side wall layer adjacent to the first conductive layers is caused to function as the variable resistance element.

Abstract: A nonvolatile semiconductor memory device below comprises: a memory cell array configured having memory cells arranged therein disposed at intersections of a plurality of first lines and a plurality of second lines formed so as to intersect each other, and the memory cells each comprising a variable resistance element; and a control circuit configured to select and drive the first lines and the second lines. The variable resistance element is configured by a transition metal oxide film. The variable resistance element is electrically connected to a first electrode configured from a metal at a first surface and is electrically connected to a second electrode at a second surface which is on an opposite side to the first surface. A first insulating film is formed between the first electrode and the variable resistance element. The first insulating film is formed by a first material that is formed by covalent binding.

Abstract: A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.