Abstract: A semiconductor stack for performing at least a logic operation includes adjacent layers arranged in a stacked configuration with each layer comprising at least a phase-change memory cell in which a phase-change material is provided between a heater electrical terminal and at least two further heater electrical terminals, the phase-change material between the heater electrical terminal and each of the two further heater electrical terminals being operable in one of at least two reversibly transformable phases, an amorphous phase and a crystalline phase; wherein the semiconductor stack, when in use, is configurable to store information by way of an electrical resistance of the phase of the phase-change material between each heater electrical terminal and each of the two further heater electrical terminals in each layer, and the logic operation is performed on the basis of the information stored in the adjacent layers.

Abstract: A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line. Dielectric pillars are placed on both sides of the gate contact. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes formation of a pair of pillars made of an insulating material over the substrate, depositing an electrically conductive gate material between and over the pillars, etching the gate material such that it both partially fills a space between the pair of pillars and forms a word line for the memory cells, and depositing a gate contact between the dielectric pillars such that the gate contact is in electrical contact with the gate material.

Abstract: A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures.

Abstract: A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated by spacers surrounding the tubular inner and outer gates.

Abstract: A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.

Abstract: The present invention provides a light emitting diode, which comprises a first LED die and a second LED die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.

Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and electron transporting layer comprising a fluoro compound of formula I (Ar2)n—Ar1—(Ar2)n??I wherein Ar1 is C5-C40 aryl, C5-C40 substituted aryl, C5-C40 heteroaryl, or C5-C40 substituted heteroaryl; Ar2 is, independently at each occurrence, fluoro- or fluoroalkyl-substituted C5-40 heteroaryl; and n is 1, 2, or 3.

Abstract: Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

Abstract: Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.

Abstract: A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs.

Abstract: An OLED display device is provided. The OLED display device includes a substrate segmented into a plurality sub-pixel regions, a thin film transistor formed in each of the sub-pixel regions, an insulating layer and a planarizion layer formed on the thin film transistor, a semitransparent reflective layer selectively formed in each sub-pixel region on the planarizion layer, a protective layer formed on the semitransparent reflective layer, an anode electrode formed in a region corresponding to the semitransparent reflective layer on the protective layer and connected to the thin film transistor, an organic light emitting layer connected to the anode electrode, and emitting light, and a cathode electrode formed on the organic light emitting layer.

Abstract: The present invention discloses an OLED display panel which includes a first TFT array substrate, a first cover and a structural stiffening glue. A first frit and a second frit of the first cover have the structural stiffening glue provided at an outer side thereof, and the structural stiffening glue is in contact with the first TFT array substrate and the first cover. The present invention further discloses a method for manufacturing the OLED display panel. The present invention enables more solid and stable for a structure of the OLED display panel.

Abstract: Disclosed are an organic light emitting display that has a configuration excluding a polarizing plate and exhibits improved flexibility and visibility, and a method for manufacturing the same, the organic light emitting display includes a touch electrode array facing the organic light emitting diode on the second buffer layer, the touch electrode array including first and second touch electrodes intersecting each other and an exterior light shielding layer including at least a color filter layer, an adhesive layer formed between the organic light emitting diode and the touch electrode array.

Abstract: Disclosed is an organic light emitting display device including: a first substrate including a plurality of pixel regions; a thin film transistor (TFT) formed in each of the plurality of pixel regions of a display unit of the substrate; a first electrode formed in the pixel region of the display unit; an organic light emitting unit formed in the pixel region of the display unit to emit light; a second electrode formed on the organic light emitting unit of the display unit; a passivation layer formed on the second electrode; and a second substrate formed on the passivation layer, wherein the second electrode is made of an alloy of silver (Ag) and an alkaline earth metal or an alloy of silver (Ag) and a rare earth metal, a composition ratio of the silver (Ag) and the alkaline earth metal or the rare earth metal is (more than 1):1, and a thickness of the second electrode ranges from 200 ? to 350-400 ?.

Abstract: An organic light emitting display device with improved thermal reliability is disclosed. The organic light emitting display device includes a substrate, and an organic light emitting device that includes a first electrode, an organic light emitting layer including a first host, a second host, and a dopant, and a second electrode sequentially stacked on the substrate. The first host and the second host have different glass transition temperatures.

Abstract: A pyrene compound and an organic light emitting diode device including the same are disclosed. The organic light emitting diode device includes at least two stacks provided between a first electrode and a second electrode, and a charge generation layer provided between the stacks and including an N type charge generation layer and a P type charge generation layer, wherein the N type charge generation layer is made of the pyrene compound.

Abstract: An anthracene compound and organic light emitting diode including the same are disclosed. The organic light emitting diode includes, at least two stacks formed between a first electrode and a second electrode and a charge generation layer (CGL) including an N-type CGL and a P-type CGL formed between the stacks, wherein the N-type CGL is formed of the anthracene compound.

Abstract: An organic electroluminescence device contains an anode and a cathode facing each other, and intervening therebetween at least two hole transporting layers and a light emitting layer sequentially, and one of the hole transporting layers contains a compound having a particular structure having a fluorene structure at the center thereof, and is not adjacent to the light emitting layer. The organic electroluminescence device has a hole transporting layer having an increased thickness, is capable of being controlled in the thickness of the optical film, and has an enhanced device capability.

Abstract: In one aspect, a display panel and a manufacturing method of the same is provided. The display panel includes a non-emission region layer having a plurality of emission regions and a connection region that is open to connect adjacent emission regions; an organic emission layer formed in each of the plurality of emission regions; a counter electrode formed in the emission regions and the connection region; and an encapsulation layer formed on the counter electrode.

Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.

Abstract: An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a manufacturing method thereof.

Abstract: A thin-film transistor (TFT) array substrate includes a first conductive layer of a TFT, a second conductive layer that partially overlaps the first conductive layer, a through hole in a layer between the first and second conductive layers, a node contact hole integrally formed to include a first contact hole in the first conductive layer and a second contact hole in the second conductive layer such that the first contact hole is continuous with the second contact hole and is not separated from the second contact hole by an insulation layer, and a connection node that is in another layer different from the first conductive layer and the second conductive layer. The connection node is connected to the first and second conductive layers through the through hole and the node contact hole.

Abstract: An organic light-emitting display device includes: a substrate; an active layer on the substrate; a gate electrode insulated from the active layer and overlapping with the active layer; a source electrode including a first source electrode layer, connected to the active layer, and a second source electrode layer connected to the first source electrode layer, the second source electrode layer being larger than the first source electrode layer; a drain electrode including a first drain electrode layer connected to the active layer, and a second drain electrode layer connected to the first drain electrode layer, the second drain electrode layer being larger than the first drain electrode layer; a first electrode directly connected to a top surface of the source electrode or the drain electrode; an intermediate layer on the first electrode and including an organic emission layer; and a second electrode on the intermediate layer.

Abstract: Electronic devices that use desiccants for protection from moisture. The electronic devices comprise a substrate and an organic element disposed over the top surface of the substrate. The substrate has one or more voids which may store desiccants. The voids may penetrate partially or completely through the thickness of the substrate. An environmental barrier is disposed over the organic element and the voids. Also provided are methods for making electronic devices that use desiccants.

Abstract: Provided are novel compounds in accordance with Formula I for an organic electronic material and an organic electroluminescent device using same. The compound for an organic electronic material disclosed herein exhibits high electron transport efficiency and thus prevents crystallization upon manufacturing a device, and also facilitates the formation of a layer, thus improving current properties of the device. Thereby, OLED devices having improved power efficiency as well as reduced operating voltage can be manufactured.

Abstract: A method for manufacturing an organic light emitting device includes: forming an organic light emitting display panel including a substrate provided on a support substrate, an organic light emitting element on the substrate, and a thin film encapsulating film covering the organic light emitting element; detaching the support substrate from the organic light emitting display panel; attaching a bottom protecting film to a bottom of the organic light emitting display panel, the bottom protecting film comprising a first electricity removing layer configured to remove static electricity; and cutting the organic light emitting display panel into a plurality of organic light emitting devices.

Abstract: A light source module, including a first electrode, a second electrode, a first light-emitting unit and a second light-emitting unit, is provided. The first light-emitting unit and the second light-emitting unit both are electrically connected between the first electrode and the second electrode and are configured to emit a light by a driving of a voltage signal formed between the first electrode and the second electrode. A first light-emitting area of the first light-emitting unit has an area size different to that of a second light-emitting area of the second light-emitting unit. The first light-emitting unit is configured to emit a light with a first spectrum, and the second light-emitting unit is configured to emit a light with a second spectrum.

Abstract: A highly reliable display device is provided. Alternatively, a display device with a narrow frame is provided. The display device includes: a first substrate and a second substrate facing each other; a pixel portion including a display element, between the first substrate and the second substrate; a first sealant provided around a periphery of the pixel portion; a second sealant which is in contact with at least one of a side surface of the first substrate and a side surface of the second substrate and with which a gap between the first substrate and the second substrate is filled; and a third sealant overlapping with a side surface of the first sealant and at least one of the side surface of the first substrate and the side surface of the second substrate with the second sealant interposed therebetween.

Abstract: A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.

Abstract: Optionally substituted ambipolar naphthalene compounds useful in light-emitting devices are described, including without limitation 9-(3-(10-(3-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)anthracen-9-yl)phenyl)-9H-carbazole and 9-(3-(10-(3-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)anthracen-9-yl)phenyl)-9H-carbazole.

Abstract: There are provided an organic thin film transistor array substrate and a method for manufacturing the same which increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pattern layer of pixel electrode, and a pattern layer of source electrode and data line and a pattern layer of drain electrode, which are located above the pattern layer of pixel electrode, are formed on a substrate through one patterning process; an organic semiconductor layer that covers the pattern layer of source electrode and data line and the pattern layer of drain electrode and a gate insulating layer that covers the organic semiconductor layer are formed through one patterning process; and a pattern layer of gate electrode and gate line is formed through one patterning process on the substrate formed with the gate insulating layer.

Abstract: An organic semiconductor material is represented by the following formula (1), wherein two or more of R1 to R6 are an alkyl group.

Abstract: Embodiments of the subject invention relate to a method and apparatus for providing an at: least partially transparent one-side emitting OLED. The at least partially transparent one-side emitting OLED can include a mirror, such as a mirror substrate, substrate with a transparent anode and a transparent cathode. The mirror can allow at least a portion of the visible spectrum of light to pass through, while also reflecting at least another portion of the visible spectrum of light. The mirror can reflect at least a portion of the visible light emitted by a light emitting layer of the OLED incident on a first surface of the mirror, while allowing another portion of the visible light incident on a second surface of the mirror to pass through the mirror.

Abstract: An organic light-emitting display device including a substrate on which a display region and a non-display region are defined is described, the organic light-emitting display device comprising: a first electrode disposed on a substrate; an intermediate layer disposed on the first electrode and including an organic light-emitting layer; a second electrode disposed on the intermediate layer; an encapsulation layer disposed on the substrate; a plurality of pad units disposed on the non-display region; a wiring unit disposed on the display region; and a bridge wiring that is disposed across the display region and the non-display region and connects one of the plurality of pad units and the wiring unit to each other.

Abstract: An OLED encapsulating structure and a manufacturing method thereof, and a light-emitting device are disclosed. The OLED encapsulating structure comprises: a base substrate, an OLED, barrier layers, and optical modulation layers; the OLED is formed on the base substrate; the barrier layers and the optical modulation layers are alternately and periodically formed on the OLED. The OLED encapsulating structure can reduce viewing-angle dependence of an OLED caused by a micro-cavity effect.

Abstract: This disclosure relates to compounds for use in light-emitting devices are described herein. These compounds may include a biphenyl that includes four substituents, such as benzoxazolyl, benzothiazolyl, or benzimidazolyl substituents, such as a compound represented by Formula 1. These compounds can incorporated into a nanostructure material or a plurality of nanostructures, which can be useful for light-scattering or light-extraction, for example, to increase the efficiency of light-emitting devices.

Abstract: An organic semiconductor illumination device including a first and second organic light emitting components is provided. Each of the organic light emitting components includes a transparent substrate, an organic light emitting structure, a first electrode structure and a second electrode structure. The transparent substrate has a first region and a second region. The first electrode structure has a first electrode body disposed between the transparent substrate and the organic light emitting structure and having a first contact portion extending from the first electrode body to the second region. The second electrode structure having a second electrode body over the organic light emitting structure and having a second contact portion extending from the second electrode body to the second region. The second region of the second organic light emitting component is disposed over the first region of the first organic light emitting component so as to form an overlapping region.

Abstract: An organic electroluminescence device according to the invention includes: a cathode; an anode; and an organic layer being interposed between the cathode and the anode, the organic layer comprising one or more layers comprising at least an emitting layer. The emitting layer contains: an anthracene derivative represented by a formula (1) below; and a pyrene derivative represented by a formula (21) below.

Abstract: An antimony-free glass comprising TeO2 and/or Bi2O3 suitable for use in a frit for producing a hermetically sealed glass package is described. The hermetically sealed glass package, such as an OLED display device, is manufactured by providing a first glass substrate plate and a second glass substrate plate and depositing the antimony-free frit onto the first substrate plate. OLEDs may be deposited on the second glass substrate plate. An irradiation source (e.g., laser, infrared light) is then used to heat the frit which melts and forms a hermetic seal that connects the first glass substrate plate to the second glass substrate plate and also protects the OLEDs disposed therein. The antimony-free glass has excellent aqueous durability, good flow, and low glass transition temperature.

Abstract: A space between a lower substrate and an upper substrate including an organic EL light-emitting layer which includes a display region for displaying an image is filled by a dam material which is applied to enclose an exterior edge of the display region and a filling material which is dripped into the interior side of the dam material. The dam material is an epoxy resin with a comparatively high viscosity before hardening and the filling material is an epoxy resin with a comparatively low viscosity before hardening. A substrate concave part is formed between the display region on a surface of the lower substrate and a coating region of the dam material.

Abstract: A device, such as an electroluminescent device, comprising (i) a transparent conductor; (ii) a metal grid disposed on said transparent conductor; and (iii) said metal grid is not covered by an insulator, but by a hole injection layer comprising at least one conjugated polymer and at least one matrix polymer. Methods for making the electroluminescent device are also disclosed.

Abstract: The present invention provides an organic light emitting diode comprising a first electrode, a second electrode and an organic material layer of one or more layers disposed between the first electrode and the second electrode, in which the organic material layer comprises a light emitting layer, an organic material layer comprising the compound represented by Formula 1 is comprised between the first electrode and the light emitting layer, and the light emitting layer comprises a host comprising the compound represented by Formula 1 and a dopant.

Abstract: An organic electroluminescence device (1) includes: an anode (3); a cathode (4); and an organic thin-film layer (10) interposed between the anode (3) and the cathode (4). The organic thin-film layer (10) includes a phosphorescent-emitting layer (5) containing a host and a phosphorescent dopant. The host contains a first host and a second host. The first host includes a substituted or unsubstituted polycyclic fused aromatic skeleton, the skeleton having 10 to 30 ring-forming atoms not including an atom of a substituent.

Abstract: A fused aromatic derivative shown by the following formula (1): wherein Ra and Rb are independently a hydrogen atom or a substituent, p is an integer of 1 to 8 and q is an integer of 1 to 11, and when p and q are two or more, Ras and Rbs may be independently the same or different, and adjacent substituents Ras may form a ring, L1 is a single bond or a substituted or unsubstituted divalent linking group, and Ar1 is a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms or a substituted or unsubstituted heteroaryl group having 5 to 50 ring atoms, provided that when L1 is a single bond and at least one of Ras is not a hydrogen atom, Ar1 is not a triphenylenyl group, and provided that substituents of L1 and Ar1, and Ra and Rb contain no amino group.

Abstract: A light emitting device material containing a pyrene compound of general formula (1) and a light emitting device.