Abstract: Provided are: a conjugated block copolymer capable of increasing the amount of optical absorption by a photoelectric conversion active layer and controlling the morphology thereof and capable of achieving excellent photoelectric conversion efficiency; and a photoelectric conversion element comprising a composition including an electron accepting material using this kind of conjugated block polymer. A ?-electron conjugated block copolymer comprises: a polymer block (A) and a polymer block (B), each of which involves a monomer unit having at least one fused ?-conjugated skeleton including at least one thiophene ring in one part of the chemical structure thereof, the polymer block (A) and the polymer block (B) have different monomer units from each other.

Abstract: An alternating electric field responsive biomedical composite is disclosed that provides capacitive coupling through the composite. The biomedical composite includes a binder material, a polar material that is substantially dispersed within the binder material, and electrically conductive particles within the binder material. The polar material is responsive to the presence of an alternating electric field, and the electrically conductive particles are not of sufficient concentration to form a conductive network through the composite unless and until the composite becomes overcharged.

Abstract: The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.

Abstract: Provided are high-aspect ratio printable thick film metal paste compositions that can be deposited onto a substrate using, for example, screening printing techniques; and methods of preparing and using thick film printable metal pastes; and methods of screen printing of the thick film metal paste compositions onto a substrate to produce printed circuits, conductive lines or features on the substrate and/or a conductive surface on a solar cell device. Also provided are printed substrates containing an electronic feature produced by the high-aspect ratio printable thick film metal paste compositions.

Abstract: Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.

Abstract: The present invention relates to optical power-limiting device, and more particularly, to an optical power-limiting passive device and to a method for limiting optical power transmission in lenses and windows, using absorption changes in a novel photochromic composition, having response to infrared light in addition to the conventional response to ultra violet light. This additional response is featuring the use of the novel photochromic composition in places where ultra violet and short wave visible light is absent, or obscured, e.g. using photochromic glasses behind the front window of a car.

Abstract: A photosensitive resin composition and application of the same are provided. The photosensitive resin composition comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photo initiator (C), an organic solvent (D), a pigment (E) and a metal chelating agent (F). During a pixel process with an omission of a prebake step, the photosensitive resin composition, which is added with the metal chelating agent (F), can be formed to pixels that is adhered tightly to a substrate.

Abstract: The present invention concerns fishing adapters for pilling a cable or the like through a hole drilled in a wall or other structure and in one aspect comprises a drill bit connector to enable the adapter to be demountably attached to a drill bit and an item connector to enable a cable or other elongate/linear item to be attached to the adapter, wherein the adapter further has a rotary coupling between the drill bit connector and the item connector to permit the drill bit to rotate as the adapter with cable or other elongate/linear item attached is pulled through a drilled hole without significantly twisting said cable or other elongate/linear item.

Abstract: A method is provided for compensating measuring errors for handling equipment with a drive carrier that includes a carrier part and driven drums for moving the steel cables arranged thereon and including a handling receptacle in which the handling receptacle is suitable for picking up loads and is connected to the carrier part by deflection pulleys via the support cables a id a controllable lever mechanism that is at least connected to at least two support cables and with at least two force sensors that capture the forces of at least two support cables and a monitoring device that monitors the forces of the at least two force sensors. An adjustment angle of the controllable lever mechanism is captured by sensors and a correction of the cable forces based on the captured adjustment angle is carried in the monitoring device.

Abstract: According to some embodiments, a winch apparatus comprises a winch housing and a winch drum rotationally mounted to the housing. The winch drum is configured to rotate around its vertical axis. The winch drum comprises a slotted keyhole for coupling a winch line to the winch drum. The slotted keyhole comprises an opening at a first end configured to receive the winch line positioned in the slotted keyhole and an opening at a second end configured to retain the winch line. A longitudinal axis of the slotted keyhole is offset from horizontal.

Abstract: Disclosed is a hoist equipped with a power-off type electromagnetic brake, wherein, at positions corresponding to an upper portion and a lower portion of a brake disk of an electromagnetic brake cover surrounding the electromagnetic brake, there are respectively provided insertion openings for first and second operation levers to be vertically inserted between an armature and a pressure-receiving plate. The first operation lever has an insertion portion to be fitted from above into the insertion opening to be inserted between the armature and the pressure-receiving plate, a retaining portion horizontally bent from the insertion portion, and a connection portion downwardly bent from the retaining portion to be connected with the second operation lever, and the second operation lever has an insertion portion fitted from below into the lower insertion opening to be inserted between the armature and the pressure-receiving plate, and an operation portion horizontally bent from the insertion portion.

Abstract: One aspect of the invention concerns a metallic bar or post (15) comprising a longitudinal axis; a spine (16) extending along the longitudinal axis; and at least three interconnected arms (17-19), each of which extends along the spine (16) and generally radially from the spine (16), with a free end (20-22) of each said arm (17-19) being tapered in the direction of the free end (20-22) to the spine (16). Other aspects of the invention concern a roll stand and rolling mill for forming the bar or post (15).

Abstract: A fence having a plinth formed from sheet material, which in one embodiment is pre-painted galvanized steel, has spaced apart end margins and is profiled to include stiffening formations that extend along the sheet between the end edge margins. The plinth is ideally suited to be used in conjunction with a fence that incorporates fence posts including channels in which the edge margin of the plinth can locate. A method of forming the plinth is also described.

Abstract: A barricade system (100) comprising at least one clip (102) having a first engagement formation (104A, 105A) adapted to secure the clip (102) to a fixed structure, the clip further having a second engagement formation (104C, 105G). The system (100) includes a joiner element (106) having a third engagement formation (106A) located on a first side, and a fourth engagement formation (106B) located on an opposing second side, the third engagement formation (106A) being adapted to engage the second engagement formation (104C, 105G) to secure the joiner element (106) to the clip (102). The system (100) includes at least one mesh panel (101) and a stopper element (107) having a fifth engagement formation (107A). The fifth engagement formation (107A) is engageable with the fourth engagement formation (106B) to secure the stopper element (107) to the joiner element (106) with a portion of the mesh panel (101) located therebetween.

Abstract: Handrails provide for increased accessibility to a restroom stall, permitting a user to apply weight to the handrail. A retrofitable handrail includes an attachment member connecting the retrofitable handrail to a top of a partition wall of the restroom stall, a support member connected to the attachment member, and a handrail member connected to the support member.

Abstract: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.

Abstract: Provided are a phase-change memory device and a method of fabricating the same. The device may include memory cells provided at intersections of word lines and bit lines that extend along first and second directions crossing each other, and a mold layer including thermal insulating regions, such as air gaps, that may be provided between the memory cells to separate the memory cells from each other. Each of the memory cells may include a lower electrode electrically connected to the word line to have a first width in the first direction, an upper electrode electrically connected to the bit line to have a second width greater than the first width in the first direction, and a phase-change layer provided between the lower and upper electrodes to have the first width in the first direction.

Abstract: A nonvolatile memory device includes a bottom electrode on a semiconductor substrate, a data storage layer on the bottom electrode, the data storage layer including a transition metal oxide, and a switching layer provided on a top surface and/or a bottom surface of the data storage layer, wherein a bond energy of material included in the switching layer and oxygen is more than a bond energy of a transition metal in the transition metal oxide and oxygen.

Abstract: A resistive memory device has a structure in which a source, a channel layer, a drain, and a resistive memory layer are sequentially formed in a particular direction, with a gate electrode formed around the channel layer. The source, channel layer, and drain may be vertically stacked on a substrate, and the gate electrode may be formed completely around the channel layer.

Abstract: Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.

Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Abstract: A light emitting structure includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A plurality of first electrodes is provided on the first conductive semiconductor layer, and a second electrode electrically connects to the second conductive semiconductor layer. A conductive support member is provided under the second electrode, and a plurality of first connection parts is coupled the first electrodes to the conductive support member, respectively. A second connection part is coupled to the second electrode. The first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer.

Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.

Abstract: A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).

Abstract: Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance.

Abstract: This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

Abstract: A small gap semiconductor system comprises: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, one sheet containing electrons and the other containing holes; a dielectric insulating barrier arranged parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.

Abstract: One aspect of the invention provides a self-assembled quantum computer including a plurality of quantum dots coupled by binding domains. Another aspect of the invention provides a method of self-assembling a quantum computer. The method includes: providing a plurality of quantum dots, each of the quantum dots coupled to between one and six binding domains; and facilitating coupling of the quantum dots through the binding domains, thereby self-assembling a quantum computer.

Abstract: A hexacene derivative is described, being expressed by formula (1): wherein X1-X6 denote the presence or absence of a carbonyl bridge [—C(?O)—], with a proviso that at least one of X1-X6 is a carbonyl bridge while any six-member ring absent of a carbonyl bridge is aromatic. A method for forming hexacene is also described, including: thermally treating the hexacene derivative to expel volatile units of CO from the hexacene derivative.

Abstract: Organic polymeric multi-metallic alkoxide or aryloxide composites are used as dielectric materials in various devices with improved properties such as improved mobility. These composites comprise an organic polymer comprising metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer, the multi-metallic alkoxide or aryloxide molecules being represented by: (M)n(OR)x wherein at least one M is a metal selected from Group 2 of the Periodic Table and at least one other M is a metal selected from any of Groups 3 to 12 and Rows 4 and 5 of the Periodic Table, n is an integer of at least 2, R represents the same or different alkyl or aryl groups, and x is an integer of at least 2.

Abstract: Multiple thin film transistors are aligned in serial and parallel orientation. A second source region is disposed between a first source region and a first drain region. A second drain region is disposed between the first source region and the first drain region. The second drain region and the second source region substantially coincide. A first gate is disposed between the first source region and the coinciding second source and second drain regions. A second gate region is disposed between the first drain region and the coinciding second source and second drain regions. An semiconductor is disposed between the first source region, the first drain region, and the coinciding second source and second drain regions. A dielectric material is disposed between the semiconductor substrate and the first and second gates.

Abstract: The present invention relates to a method for laminating an alignment film onto an organic light emitting diode. The method includes a) deploying a bonding agent over a surface of the organic light emitting diode; b) laminating the alignment film with the organic light emitting diode on the surface deployed with bonding agent; and c) curing the bonding agent with heat or light such that the alignment film and the organic light emitting diode are completely laminated. The present invention further discloses an LED display device. By way of foregoing, during the lamination of the alignment film, bubbles can be avoided, and the yield can be increased.

Abstract: An organic light emitting display apparatus including a plurality of sub-pixels disposed on a substrate, wherein each of the sub-pixels includes: a first electrode formed on the substrate; an intermediate layer formed on the first electrode and including an organic emission layer; and a second electrode formed on the intermediate layer, wherein at least one sub-pixel for emitting light of a color among the sub-pixels includes a shadow emission layer for emitting light of different color between the organic emission layer and the first electrode, and the organic emission layer of the one sub-pixel includes a hole transport material.

Abstract: An organic light emitting display apparatus and a method of inspecting the same, the organic light emitting display apparatus including a plurality of sub-pixels; a plurality of conductive line portions connected to the sub-pixels, the plurality of conductive line portions including at least two conductive lines connected in parallel to one another; and inspection thin film transistors (TFTs) disposed adjacent to one end and both ends of at least one conductive line of the conductive lines connected in parallel to one another.

Abstract: A thin film transistor includes a gate electrode on a substrate, the gate electrode including a wire grid pattern, an active layer on the substrate, a gate insulating film between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

Abstract: Provided are heterocyclic compounds represented by general Formula 1 below and organic light-emitting devices including the same: Such N-substituted diarylamino derivatives of 4,5-iminophenanthrene, when included in color fluorescent or phosphorescent organic light emitting devices in a hole transporting or hole injecting charge transport role, impart high efficiency, low driving voltages, high luminances and long lifetimes to these devices.

Abstract: Provided is a heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the compound of Formula 1: wherein substituents in Formula 1 above are defined as in the specification.

Abstract: An organic light emitting diode display includes a first substrate, an organic light emitting diode on the first substrate, a second substrate on the organic light emitting diode, and a capping layer between the second substrate and the organic light emitting diode. The capping layer collects light emitted from the organic light emitting diode, and the capping layer collects the light in a direction of the second substrate corresponding to the organic light emitting diode.

Abstract: Devices and methods for increasing the aperture ratio and providing more precise gray level control to pixels in an active matrix organic light emitting diode (AMOLED) display are provided. By way of example, one embodiment includes disposing a gate insulator between a gate of a driving thin-film transistor and a gate of a circuit thin-film transistor. The improved structure of the display facilitates a higher voltage range for controlling the gray level of the pixels, and may increase the aperture ratio of the pixels.

Abstract: An organic light emitting diode display and a method of manufacturing the same, the display including a substrate; a plurality of thin film transistors on the substrate; a protective film covering the plurality of thin film transistors; a pixel electrode on the protective film; a pixel defining film on the protective film, the pixel defining film having an opening exposing the pixel electrode; an organic emission layer on the pixel electrode and the pixel defining film; and a common electrode covering the organic emission layer, wherein a cross-section of an opening sidewall of the opening in the pixel defining film has a rounded shape.

Abstract: Organic compounds and organic electroluminescence devices employing the same are provided. The organic compound has a chemical structure as represented as follows: wherein, R1 is independently the same or different C1-6 alkyl, and R2 is independently the same or different hydrogen, halogen, cyano, hydroxy, C1-8 alkyl group, C1-8 alkoxy group, C5-10 aryl, or C2-8 heteroaryl group.

Abstract: An organic light-emitting diode is provided which is capable of preventing screen stain occurring when the organic light-emitting diode is driven at low gradation and/or low brightness.

Abstract: An organic light emitting diode display according to the present invention includes a substrate and a plurality of pixels formed on the substrate. One pixel includes: a scan line formed on the substrate and transmitting a scan signal; a data line and a driving voltage line crossing the scan line and transmitting a data signal and a driving voltage, respectively; a switching thin film transistor connected to the scan line and the data line; a driving thin film transistor connected to a switching drain electrode of the switching thin film transistor; and an organic light emitting diode connected to a driving drain electrode of the driving thin film transistor. The plurality of pixels includes a separation pixel at which the driving voltage line is separated and a connection pixel at which the driving voltage line is connected.

Abstract: A thin film transistor and method of manufacturing the same are disclosed. In one aspect, the thin film transistor includes a gate electrode positioned on a substrate It also includes a gate insulating layer positioned on the gate electrode and a semiconductor positioned on the gate insulating layer. It further includes a source electrode and a drain electrode positioned on the semiconductor, in which the semiconductor has a step at a boundary surface that is in contact with the gate insulating layer.

Abstract: A compound having an indolocarbazole ring structure is represented by the following general formula (1), and is used as a material for forming a highly efficient and highly durable organic electroluminescent device. The compound features excellent hole injection/transport capability, has electron blocking power and is highly stable in the form of a thin film. wherein, A is a divalent aromatic hydrocarbon group or aromatic heterocyclic group, Ar1 to Ar4 are monovalent aromatic hydrocarbon groups or aromatic heterocyclic groups, and R1 to R9 are hydrogen atoms, deuterium atoms, fluorine atoms, chlorine atoms, cyano groups, nitro groups, alkyl groups, cycloalkyl groups, alkenyl groups, alkyloxy groups, cycloalkyloxy groups, aromatic hydrocarbon groups, aromatic heterocyclic groups or aryloxy groups.

Abstract: To provide a photoelectric element A including a first electrode 2, a second electrode 3 arranged opposite to the first electrode 2, an electron transport layer 1 provided on a face of the first electrode 2, the face being opposite to the second electrode 3, a photosensitizer 5 supported on the electron transport layer 1, and a hole transport layer 4 interposed between the first electrode 2 and the second electrode 3. The electron transport layer 1 includes a filled part 8 containing an organic molecule.

Abstract: An organic light emitting diode display includes a red pixel, a green pixel, and a blue pixel, each pixel including a pixel electrode, a hole supplementary layer on the pixel electrode, a blue organic emission layer on the hole supplementary layer, a first buffer layer on the blue organic emission layer, an electron supplementary layer on the first buffer layer, and a common electrode on the electron supplementary layer, the red pixel and the green pixel further include a red resonance auxiliary layer and a green resonance auxiliary layer respectively on the first buffer layer, a red organic emission layer and a green organic emission layer respectively on the red resonance auxiliary layer and the green resonance auxiliary layer, and a second buffer layer on the red organic emission layer and the green organic emission layer.

Abstract: An organic light emitting transistor includes: a first electrode positioned on a substrate; a gate electrode positioned on the first electrode and including an opening formed at a center region; a first auxiliary layer positioned within the opening; an organic emission layer positioned on the first auxiliary layer and the gate electrode; a second auxiliary layer positioned on the organic emission layer; and a second electrode positioned on the second auxiliary layer.