Patents Issued in May 8, 2014
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Publication number: 20140124760Abstract: Disclosed are an organometallic complex, and an organic electroluminescence device and a display device including the same. The organometallic complex is represented by the following Chemical Formula 1. The definition of the above Chemical Formula 1 is the same as described in the detailed description.Type: ApplicationFiled: October 24, 2013Publication date: May 8, 2014Applicants: CHEIL INDUSTRIES INC., SAMSUNG ELECTRONICS CO., LTD.Inventors: Rupasree Ragini Das, Chang Ho NOH, DMITRY KRAVCHUK, O Hyun KWON, Hyeon Ho CHOI
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Publication number: 20140124761Abstract: A thin film transistor array panel according to an exemplary embodiment includes: a substrate; a thin film transistor positioned on the substrate; a first electrode connected to the thin film transistor; and a diffractive layer positioned between the substrate and the thin film transistor. The diffractive layer is positioned within a boundary line of semiconductors of the thin film transistor.Type: ApplicationFiled: October 25, 2013Publication date: May 8, 2014Inventors: Woo-Sik Jeon, Young-Mo Koo, Min-Woo Lee, Jae-Goo Lee
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Publication number: 20140124762Abstract: Embodiments described herein relate to compositions including iptycene-based structures and extended iptycene structures. In some embodiments, the compositions may be useful in organic light-emitting diodes (OLEDs), organic photovoltaics, and other devices.Type: ApplicationFiled: October 30, 2013Publication date: May 8, 2014Applicant: Massachusetts Institute of TechnologyInventors: Stephen L. Buchwald, Timothy M. Swager, Georgiy Teverovskiy, Mingjuan Su
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Publication number: 20140124763Abstract: The present invention relates to aromatic amine derivatives having a specific structure in which a substituted diphenylamino group is bonded to a pyrene structure; and organic electroluminescent devices comprising a cathode, an anode and one or plural organic thin film layers having at least a light emitting layer which are sandwiched between the cathode and the anode wherein at least one of the organic thin film layers contains the above material for organic electroluminescent devices in the form of a single substance or a component of a mixture. There are provided the material for organic electroluminescent devices exhibiting a long lifetime and a high efficiency of blue light emission, as well as the aromatic amine derivatives capable of realizing such organic electroluminescent devices.Type: ApplicationFiled: October 31, 2013Publication date: May 8, 2014Applicant: IDEMITSU KOSAN CO., LTD.Inventor: Masakazu FUNAHASHI
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Publication number: 20140124764Abstract: To provide a novel heterocyclic compound capable of being used as a host material in which a light-emitting substance is dispersed. To provide a light-emitting element having a long lifetime. A heterocyclic compound in which a dibenzo[f,h]quinoxalinyl group and a benzo[b]naphtho[1,2-d]furanyl group are bonded through an arylene group having 6 to 13 carbon atoms. The dibenzo[f,h]quinoxalinyl group, the benzo[b]naphtho[1,2-d]furanyl group, and the arylene group separately are unsubstituted or have, as a substituent, an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 13 carbon atoms.Type: ApplicationFiled: October 31, 2013Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasushi Kitano, Hiroshi Kadoma, Satoko Shitagaki, Satoshi Seo, Hiromi Seo, Tatsuyoshi Takahashi
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Publication number: 20140124765Abstract: Disclosed herein is an organic EL display device in which pixels each including an organic EL element formed by interposing an organic layer between an anode electrode and a cathode electrode are arranged in a matrix, the organic EL display device including: a common layer configured to be included in the organic EL element and be formed in the organic layer in common to the pixels; and a metal interconnect configured to surround periphery of the anode electrode and be electrically connected to the organic layer, wherein potential of the metal interconnect is set to a potential lower than potential of the anode electrode in a non-light-emission state of the organic EL element.Type: ApplicationFiled: November 5, 2013Publication date: May 8, 2014Applicant: Sony CorporationInventor: Keisuke Omoto
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Publication number: 20140124766Abstract: An organic light emitting display device includes first and second electrodes facing each other on a substrate, at least one emission layer formed between the first and second electrodes, a hole transport layer formed between the first electrode and the emission layer, and an electron transport layer formed between the second electrode and the emission layer, wherein the emission layer includes a first emission mixed layer formed on the hole transport layer, the first emission mixed layer including a first hole-type host and a first phosphorescent dopant, and a second emission mixed layer formed between the first emission mixed layer and the electron transport layer, the second emission mixed layer including a first electron-type host and a second phosphorescent dopant.Type: ApplicationFiled: November 6, 2013Publication date: May 8, 2014Applicant: LG DISPLAY CO., LTD.Inventors: Ki-Woog SONG, Sung-Hoon PIEH, Seok-Joon OH, Youn-Seok KAM, Dong-Hyuk KIM, Seon-Keun YOO, Tae-Shick KIM
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Publication number: 20140124767Abstract: An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device-has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer.Type: ApplicationFiled: April 2, 2012Publication date: May 8, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Tony Maindron, Bernard Aventurier, Jean-Yves Simon
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Publication number: 20140124768Abstract: A top-emitting flexible organic light emission diode device and preparation method thereof are provided. The device involves overlapping a substrate, an anode layer, a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, an electron injection layer and a cathode layer sequentially. The material of the cathode is scythe-silver alloy or ytterbium-silver alloy. The method for preparing the device comprises the following steps: cleaning and drying the substrate; depositing the anode layer on the surface of the substrate; overlapped depositing the hole injection layer, the hole transport layer, the emission layer, the electron transport layer and the electron injection layer sequentially on the surface of the anode layer; depositing the cathode layer on the surface of the electron injection layer to obtain the device.Type: ApplicationFiled: June 30, 2011Publication date: May 8, 2014Applicant: OCEAN'S KING LIGHTING SCIENCE & TECHNOLOGY CO., LTDInventors: Mingjie Zhou, Ping Wang, Xiaoming Feng, Hui Huang
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Publication number: 20140124769Abstract: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.Type: ApplicationFiled: January 9, 2014Publication date: May 8, 2014Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: Jin-Hee KANG, Chun-Gi YOU, Sun PARK, Jong-Hyun PARK, Yul-Kyu LEE
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Publication number: 20140124770Abstract: An active matrix type display device having a plurality of pixel circuits (1) arranged in a matrix shape. The pixel circuit has: a display device (EL); a drive transistor (M1) of a first conductivity type for controlling a current flowing in the display device; a capacitor (C1) provided at a control electrode of the drive transistor; and a switch (M2a, M2b), connected to the control electrode of the drive transistor, for holding a drive control signal at the capacitor. The switch includes a switching transistor (M2a) of the first conductivity type and a switching transistor (M2b) of a second conductivity type in which one main electrode of the switching transistor of the first conductivity type and one main electrode of the switching transistor of the second conductivity type are connected serially.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: CANON KABUSHIKI KAISHAInventor: Somei Kawasaki
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Publication number: 20140124771Abstract: A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.Type: ApplicationFiled: January 13, 2014Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Hiroki, Hideaki Kuwabara
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Publication number: 20140124772Abstract: An organic electroluminescence display device is provided. The organic electroluminescence display device includes plural organic electroluminescence elements. Each organic electroluminescence element includes: a lower electrode; an insulating layer having an opening, in which a lower electrode is exposed at the bottom of the opening; an auxiliary wiring; a stacked structure provided from a portion over the lower electrode exposed at the bottom of the opening to a portion of the insulating layer surrounding the opening, including a light emitting layer made of an organic light-emitting material; and an upper electrode. At least one layer of the stacked structure partially contacts the auxiliary wiring. The insulating layer and the auxiliary wiring are provided in common to the plurality of organic EL elements. The upper electrode covers the whole surface of the stacked structures and the auxiliary wiring.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Sony CorporationInventors: Mitsuhiro Kashiwabara, Jiro Yamada, Hiroshi Fujimaki, Hirofumi Fujioka, Reo Asaki
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Publication number: 20140124773Abstract: The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature.Type: ApplicationFiled: January 15, 2014Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Mitsuaki Osame, Mai Osada
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Publication number: 20140124774Abstract: A MOSFET device is provided. An N-type epitaxial layer is disposed on an N-type substrate. An insulating trench is disposed in the epitaxial layer. A P-type well region is disposed in the epitaxial layer at one side of the insulating trench. An N-type heavily doped region is disposed in the well region. A gate structure is disposed on the epitaxial layer and partially overlaps with the heavily doped region. At least two P-type first doped regions are disposed in the epitaxial layer below the well region. At least one P-type second doped region is disposed in the epitaxial layer and located between the first doped regions. Besides, the first and second doped regions are separated from each other. The first doped regions extend along a first direction, and the second doped region extends along a second direction different from the first direction.Type: ApplicationFiled: June 11, 2013Publication date: May 8, 2014Inventors: Chee-Wee Liu, Hui-Hsuan Wang
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Publication number: 20140124775Abstract: A coating solution coating solution for forming a transparent dielectric thin film is provided. The coating solution includes a precursor for a first substance including aluminum, a precursor for a second substance including zirconium, and a solvent that dissolves the first and second substances. The solvent is composed of a first solvent and a second solvent.Type: ApplicationFiled: September 3, 2013Publication date: May 8, 2014Applicant: Industry-Academic Cooperation Foundation, Yonsei UniversityInventors: Joo Ho Moon, Woo Seok Yang, Keun Kyu Song, Yang Ho Jung
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Publication number: 20140124776Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: ApplicationFiled: November 5, 2013Publication date: May 8, 2014Applicant: SEMICONDUCTORS ENERGY LABORATORY CO., LTD.Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
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Publication number: 20140124777Abstract: A method for manufacturing a build-up substrate, the build-up substrate comprising an insulating layer and a wiring pattern layer stacked over a circuit substrate, said method comprising the steps of: (i) applying a photoactive metal oxide precursor material to one or both sides of the circuit substrate with a wiring pattern, and drying the applied photoactive metal oxide precursor material to form an insulating film; (ii) forming an opening for a via hole in the insulating film by exposure and development of the insulating film; (iii) applying a heat treatment to the insulating film to convert the insulating film into a metal oxide film, thereby forming a build-up insulating layer of the metal oxide film; and (iv) plating the build-up insulating layer to form via holes in the openings, forming a metal layer on the build-up insulating layer, and etching the metal layer to form a build-up wiring pattern; and (v) repeating the steps from (i) to (iv) at least one time.Type: ApplicationFiled: October 29, 2012Publication date: May 8, 2014Applicant: Panasonic CorporationInventors: Seiichi Nakatani, Koji Kawakita, Susumu Sawada, Yoshihisa Yamashita
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Publication number: 20140124778Abstract: Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.Type: ApplicationFiled: January 7, 2014Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideki Uochi, Koichiro Kamata
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Publication number: 20140124779Abstract: A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.Type: ApplicationFiled: January 9, 2014Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yasuyuki ARAI
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Publication number: 20140124780Abstract: One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×1016 cm?3.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Publication number: 20140124781Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Sony CorporationInventors: Yasuhiro Terai, Eri Fukumoto, Toshiaki Arai, Narihiro Morosawa
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Publication number: 20140124782Abstract: An image sensor may include a first layer on a substrate and including a chalcogenide-containing material, and a detection part connected to the first layer and configured to detect a variation in electric characteristics of the first layer. The chalcogenide-containing material may include one of AxByS1-x-y, AxByTe1-x-y, and AxBySe1-x-y, where 0<x<1, 0<y<1, A may include at least one of Si, Ge, Sn, Pb, Al, Ga, In, Cu, Zn, Ag, Cd, Ti, V, Cr, Mn, Fe, Co, and Ni, and B may include at least one of Sb, Bi, As, and P.Type: ApplicationFiled: November 6, 2013Publication date: May 8, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-kyu JUNG, Taeyon LEE, Yoondong PARK, Hyunseok LEE
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Publication number: 20140124783Abstract: A method for manufacturing a thin-film transistor includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode which are opposed to each other and each of which has at least a portion located above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; and performing, in a hydrogen atmosphere, plasma treatment on an altered layer which (i) is a surface layer of the protective layer exposed from the source electrode and the drain electrode and altered by the dry etching, and (ii) has at least a portion contacting a surface of the semiconductor layer.Type: ApplicationFiled: May 29, 2013Publication date: May 8, 2014Applicant: PANASONIC CORPORATIONInventors: Yuji Kishida, Kenichirou Nishida, Mitsutaka Matsumoto
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Publication number: 20140124784Abstract: Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure comprises a copper layer formed of copper or copper alloy; a blocking layer for preventing copper ions of the copper layer from diffusing outward; and a diffusion prevention layer for preventing exterior ions from diffusing to the copper layer and disposed between the copper layer and the blocking layer. The multilayer conductive structure according to an embodiment of the invention can prevent exterior ions from diffusing into a copper layer and prevent copper ions from diffusing outward to reduce ions diffusion that adversely impacts the electricity performance and chemical corrosion resistance of the copper metal layer, and meanwhile can enhance adhesiveness of the conductive structure, which may be helpful for etching/patterning of the multilayer conductive structure.Type: ApplicationFiled: October 17, 2012Publication date: May 8, 2014Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jaemoon Chung, Qiuping Huang, Seong Sil Im, Dongseob Kim, Chao-Huan Hsu, Huawei Xu, Zhengwei Chen, Jianshe Xue
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Publication number: 20140124785Abstract: This semiconductor device fabricating method includes the steps of: (A) providing a supporting structure (10) in which a first separating layer (3) and a first insulating layer (5) have been stacked in this order on the surface of a supporting base (1); (B) providing a sustaining structure (30); (C) forming a thin-film transistor (M1, M2) on the first insulating layer (5); (D) forming a second insulating layer (20) that covers the thin-film transistor (M1, M2); (E) joining the supporting structure on which the second insulating layer has been formed onto the sustaining structure (30) so that the thin-film transistor (M1, M2) faces the sustaining structure (30) with the second insulating layer (20) interposed, thereby obtaining a joined structure (40); (F) removing the supporting base and at least a part of the first separating layer (3) from the joined structure (40); and (G) forming a pixel electrode (33) on the other side of the joined structure (40), from which the supporting base has already been removed,Type: ApplicationFiled: June 11, 2012Publication date: May 8, 2014Applicant: Sharp Kabushiki KaishaInventor: Kenshi Tada
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Publication number: 20140124786Abstract: The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole.Type: ApplicationFiled: January 9, 2014Publication date: May 8, 2014Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: Pil Soon HONG, Gwui-Hyun PARK, Jin-Su BYUN, Sang Gab KIM
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Publication number: 20140124787Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.Type: ApplicationFiled: September 9, 2012Publication date: May 8, 2014Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yanzhao Li, Gang Wang, Li Sun, Shuang Guan
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Publication number: 20140124788Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.Type: ApplicationFiled: November 6, 2012Publication date: May 8, 2014Applicant: INTERMOLECULAR, INC.Inventors: Philip Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan
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Publication number: 20140124789Abstract: A method of fabricating a multi-layer structure for a power transistor device includes performing, within a reaction chamber, a nitrogen plasma strike, resulting in the formation of a nitride layer directly on a nitride-based active semiconductor layer. A top surface of the nitride layer is then exposed to a second source. A subsequent nitrogen-oxygen plasma strike results in the formation of an oxy-nitride layer directly on the nitride layer. The nitride layer comprises a passivation layer and the oxy-nitride layer comprises a gate dielectric of the power transistor device.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Power Integrations, Inc.Inventors: Jamal Ramdani, Linlin Liu, John Paul Edwards
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Publication number: 20140124790Abstract: According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1?1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1?1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.Type: ApplicationFiled: January 14, 2014Publication date: May 8, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Toshiki HIKOSAKA, Yoshiyuki HARADA, Hisashi YOSHIDA, Naoharu SUGIYAMA, Shinya NUNOUE
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Publication number: 20140124791Abstract: A high electron mobility transistor includes a source, a gate and a drain, a first III-V semiconductor region, and a second III-V semiconductor region below the first III-V semiconductor region. The high electron mobility transistor further includes a compensation structure interposed between the first and second III-V semiconductor regions so that the first and second III-V semiconductor regions are spaced apart from one another by the compensation structure. The compensation structure has a different band gap than the first and second III-V semiconductor regions.Type: ApplicationFiled: January 15, 2014Publication date: May 8, 2014Applicant: Infineon Technologies Austria AGInventors: Gilberto Curatola, Oliver Häberlen
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Publication number: 20140124792Abstract: Embodiments of a Nickel-rich (Ni-rich) Schottky contact for a semiconductor device and a method of fabrication thereof are disclosed. Preferably, the semiconductor device is a radio frequency or power device such as, for example, a High Electron Mobility Transistor (HEMT), a Schottky diode, a Metal Semiconductor Field Effect Transistor (MESFET), or the like. In one embodiment, the semiconductor device includes a semiconductor body and a Ni-rich Schottky contact on a surface of the semiconductor body. The Ni-rich Schottky contact includes a multilayer Ni-rich contact metal stack. The semiconductor body is preferably formed in a Group III nitride material system (e.g., includes one or more Gallium Nitride (GaN) and/or Aluminum Gallium Nitride (AlGaN) layers). Because the Schottky contact is Ni-rich, leakage through the Schottky contact is substantially reduced.Type: ApplicationFiled: November 5, 2012Publication date: May 8, 2014Applicant: Cree, Inc.Inventors: Helmut Hagleitner, Fabian Radulescu, Daniel Namishia
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Publication number: 20140124793Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<)2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.Type: ApplicationFiled: November 6, 2012Publication date: May 8, 2014Applicants: University of Florida Research Foundation, Inc., Sinmat, Inc.Inventors: RAJIV SINGH, DEEPIKA SINGH, ARUL CHAKKARAVARTHI ARJUNAN
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Publication number: 20140124794Abstract: Generally, the present disclosure is directed to methods for forming reverse shallow trench isolation structures with super-steep retrograde wells for use with field effect transistor elements. One illustrative method disclosed herein includes performing a thermal oxidation process to form a layer of thermal oxide material on a semiconductor layer of a semiconductor substrate, and forming a plurality of openings in the layer of thermal oxide material to form a plurality of isolation regions from the layer of thermal oxide material, wherein each of the plurality of openings exposes a respective surface region of the semiconductor layer.Type: ApplicationFiled: November 7, 2012Publication date: May 8, 2014Applicant: Globalfoundries Inc.Inventors: Tong Weihua, Krishnan Bharat, Lun Zhao, Kim Seung, Lee Yongmeng, Kim Sun
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Publication number: 20140124795Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.Type: ApplicationFiled: November 15, 2012Publication date: May 8, 2014Applicants: Bay Zu Precision Co., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
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Publication number: 20140124796Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.Type: ApplicationFiled: November 7, 2013Publication date: May 8, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kaoru HATANO, Satoshi SEO, Takaaki NAGATA, Tatsuya OKANO
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Publication number: 20140124797Abstract: Aspects of the disclosure pertain to a system and method for reducing ambient light sensitivity of Infrared (IR) detectors. Optical filter(s) (e.g., absorption filter(s), interference filter(s)) placed over a sensor of the IR detector (e.g., gesture sensor) absorb or reflect visible light, while passing specific IR wavelengths, for promoting the reduced ambient light sensitivity of the IR detector.Type: ApplicationFiled: October 30, 2013Publication date: May 8, 2014Applicant: Maxim Integrated Products, Inc.Inventors: Joy T. Jones, Nicole D. Kerness, Sunny K. Hsu, Anand Chamakura, Christopher F. Edwards, David Skurnik, Phillip J. Benzel, Nevzat A. Kestelli
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Publication number: 20140124798Abstract: A light-emitting element includes: a light-emitting structure; a plurality of first contact portions separately on the light-emitting structure; and a plurality of reflective portions disposed separately among the plurality of first contact portions.Type: ApplicationFiled: November 5, 2012Publication date: May 8, 2014Applicant: EPISTAR CORPORATIONInventors: Jhih-Sian Wang, Yao-Ru Chang, Yiwen Huang, Guo-Chin Liu
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Publication number: 20140124799Abstract: Provided is a light emitting diode, including a sub-mount structure including a first substrate and electrode portions provided on the first substrate, and a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The electrode portions may include a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and each of the first and second electrode portions may include a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.Type: ApplicationFiled: March 14, 2013Publication date: May 8, 2014Applicant: Electronics and Telecommunications Research InstituteInventor: Electronics and Telecommunications Research Institute
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Publication number: 20140124800Abstract: Embodiments of the present application provide an array substrate comprising: a base substrate, and a plurality of gate lines, a plurality of data lines and a plurality of pixel units defined by the gate lines and the data lines, which are formed on the base substrate, the pixel units comprising thin film transistors, pixel electrodes and common electrodes, projections of the data lines and the common electrodes on the base substrate not coinciding with each other. The embodiments of the present application also provide a display device comprising the above array substrate.Type: ApplicationFiled: October 25, 2013Publication date: May 8, 2014Applicant: BOE Technology Group Co., Ltd.Inventors: YOON SUNG UM, HYUN SIC CHOI, ZHIQIANG XU, HUI LI
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Publication number: 20140124801Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a first cavity in a first region of the body; a second cavity in a second region of the body; first and second lead frames spaced apart from each other in the first cavity; a third lead frame spaced apart from the second lead frame in the second cavity; a first light emitting device on the first and second lead frames in the first cavity; a second light emitting device on the second and third lead frames in the second cavity; and a molding member in the first and second cavities.Type: ApplicationFiled: January 15, 2014Publication date: May 8, 2014Inventor: Buem Yeon LEE
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Publication number: 20140124802Abstract: Disclosed is a full-color LED display device and a manufacturing method thereof. The full-color LED display device includes 1) a plurality of first electrodes formed on a substrate, 2) at least five subminiature blue LED elements attached to each unit pixel site formed on the first electrode, 3) an insulation layer formed on the substrate and the blue LED element, 4) a plurality of second electrodes formed on the insulation layer, and 5) a green color conversion layer and a red color conversion layer formed on the second electrode corresponding to partial unit pixel sites selected from the unit pixel sites.Type: ApplicationFiled: April 27, 2012Publication date: May 8, 2014Applicant: KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATIONInventors: Young-Rag Do, Yeon-Goog Sung
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Publication number: 20140124803Abstract: A display panel includes a display area including a display element, and a non-display area adjacent to the display area, the non-display area including a plurality of conductive pads. The conductive pads are spaced apart at a predetermined distance so as to form a first pad row and a second pad row, the conductive pads collectively having a center portion and lateral portions. A distance between the first pad row and the second pad row is greater at at least one of the lateral end portions than at the center portion.Type: ApplicationFiled: September 17, 2013Publication date: May 8, 2014Applicant: Samsung Display Co., Ltd.Inventors: Jun-Ho KWACK, Joon-Sam KIM, Jong-Hwan KIM
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Publication number: 20140124804Abstract: A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.Type: ApplicationFiled: October 30, 2013Publication date: May 8, 2014Inventors: Kiseong Jeon, Hojun Lee, Kyejin Lee
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Publication number: 20140124805Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: NICHIA CORPORATIONInventors: Shunsuke MINATO, Junya NARITA, Yohei WAKAI, Yukio NARUKAWA, Motokazu YAMADA
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Publication number: 20140124806Abstract: An AlInGaN light emitting device having a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2, preferably having an index of refraction close to or greater than the index of refraction of GaN. The coating can be made from Ta2O5, Nb2O5, TiO2, or SiC and has can have a thickness between 0.01 and 10 microns. A surface of the coating material may be textured or shaped to increase its surface area and improve light extraction. A coating can be applied directly to one or multiple surfaces of the light emitting device or can be applied onto a contact material and can serve as a passivation or as a protection layer for a device.Type: ApplicationFiled: October 27, 2009Publication date: May 8, 2014Applicant: BRIDGELUX, INC.Inventor: Steven D. Lester
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Publication number: 20140124807Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: April 1, 2013Publication date: May 8, 2014Applicant: Epistar CorporationInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20140124808Abstract: A light emitting diode (LED) includes a base, an LED die grown on the base, a transparent electrically conductive layer formed on a side of the LED die, a protecting layer covering the transparent electrically conductive layer, and a phosphor layer formed on the protecting layer. Through holes extend through the phosphor layer and the protecting layer to make part of light emitted from the LED die directly traveling out from the through holes to illuminate. A method for manufacturing the LED is also provided.Type: ApplicationFiled: July 31, 2013Publication date: May 8, 2014Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: CHIEN-CHUNG PENG, TZU-CHIEN HUNG, CHIA-HUI SHEN
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Publication number: 20140124809Abstract: The present invention provides a thermosetting silicone resin sheet having a phosphor-containing thermosetting silicone resin layer formed in the form of an LED device and a method for producing the same, and a light-emitting apparatus using the thermosetting silicone resin sheet and a method for producing the same. The present invention was accomplished by the phosphor-containing thermosetting silicone resin sheet comprising a substrate film and a phosphor-containing thermosetting silicone resin layer that is a plastic solid or a semi-solid at room temperature composed of a single layer having no adhesive layer, formed by printing and molding a phosphor-containing thermosetting silicone resin composition on the substrate film in the form of an LED device.Type: ApplicationFiled: October 21, 2013Publication date: May 8, 2014Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Tsutomu KASHIWAGI, Toshio SHIOBARA