Abstract: In various embodiments of the present invention, a thermoelectric device is provided. The thermoelectric device includes one or more thermoelements that transfer heat across the ends of the thermoelectric device. A method for creating the thermoelectric device includes forming a metal substrate, and etching one or more surfaces of the metal substrate to form etched portions. The unetched flat portions on the metal substrate are referred to as mesa cores. Thereafter, thermoelectric films are deposited on the one or more surfaces of the metal substrate. The deposition of the thermoelectric films on the mesa cores results in the formation of a thermoelement.

Abstract: A method for manufacturing an imaging device is presented. The method starts with providing a wafer having a membrane with an opening bonded to a substrate. A photoresist layer is deposited over the membrane and wafer surface. A portion of the substrate back surface under a central part of the membrane is etched anisotropicly. A first region of the photoresist layer is removed, exposing an opening in the membrane, so that a first isotropic etching of the substrate is performed through the membrane opening. A second region of the photoresist layer is stripped, exposing a second membrane opening, providing access for a second isotropic etching of the substrate through the first and/or second membrane opening.

Abstract: There are provided a multi-layer piezoelectric element which is capable of suppressing separation of an external electrode plate, as well as a piezoelectric actuator, an injection device, and a fuel injection system that are provided with the multi-layer piezoelectric element. A multi-layer piezoelectric element includes a stacked body composed of piezoelectric layers and internal electrode layers which are laminated; an external electrode plate attached to a side face of the stacked body via an electrically-conductive joining member; and a metal cover layer being disposed on a surface of the external electrode plate, an area of the metal cover layer corresponding to one end portion of the stacked body in a stacking direction of the stacked body having a thick-walled portion which is larger in thickness than an area of the metal cover layer corresponding to a midportion of the stacked body.

Abstract: A piezo actuator includes an actuator body with a plurality of piezo elements and a tensioning device loading the actuator body with a bias. The tensioning device includes a traction device mounted as a biased winding on the actuator body in a plurality of turns around the actuator body. The traction device is at least one of resilient or flexible.

Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

Abstract: A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract: A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a dipole layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract: A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract: A memory device may comprise a magnetic tunnel junction (MTJ) stack, a bottom electrode (BE) layer, and a contact layer. The MTJ stack may include a free layer, a barrier, and a pinned layer. The BE layer may be coupled to the MTJ stack, and encapsulated in a planarized layer. The BE layer may also have a substantial common axis with the MTJ stack. The contact layer may be embedded in the BE layer, and form an interface between the BE layer and the MTJ stack.

Abstract: A technique relates magnetoresistive random access memory (MRAM). A dielectric layer is disposed on a transistor, and the transistor is formed in a uniform crystalline substrate. A hole is formed through the dielectric layer to reach the transistor. A polycrystalline material is disposed in the hole by using selective epitaxial growth (SEG), and the polycrystalline material is annealed to create an epitaxial stud. A magnetic tunnel junction (MTJ) is disposed on the epitaxial stud (SEG).

Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.

Abstract: A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element.

Abstract: In accordance with an embodiment of the present invention, a memory cell includes a two terminal access device disposed above a semiconductor substrate. The access device includes a two terminal resistive switching device having substantially zero retention. The two terminal resistive switching device has a low resistance state and a high resistance state. A memory device is disposed above the semiconductor substrate. The memory device is coupled to the access device.

Abstract: A nonvolatile memory device includes an inserted electrode line disposed between a first and a second electrode lines and extending in parallel with the second electrode line. The inserted electrode line is coupled to the second electrode line. A first intermediate pattern disposed between the inserted electrode line and a second intermediate pattern is disposed between the inserted electrode line and the second electrode line. One of the first and second intermediate patterns is a variable resistor and the other of the first and second intermediate patterns is a selector. The first intermediate pattern covers a bottom surface and a portion of sidewalls of the inserted electrode line.

Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract: An organic light-emitting diode (OLED) display panel, a manufacturing method thereof and a display device are provided. In the manufacturing method, pixel electrodes, required to be deposited with a material, on a base substrate are charged, and electrodes at an evaporation source are charged to form an electric field; evaporation material corresponding to the material required to be deposited are placed into the evaporation source and ionized, and the ionized evaporation material are deposited on the base substrate under the action of the electric field; deposited material in other pixel units are etched off and removed, so that the evaporation material only on the previously charged pixel electrodes on the base substrate are retained; and patterns of the required material are formed by the processes of deposition and etching in turn. The manufacturing method improves the resolution of finished products and can help to improve the resolution of the OLED.

Abstract: A hole transport polymeric compound and a polymer light emitting diode using the same. The hole transport polymeric compound includes a hole transport material, a thermal cross-linking agent containing an ethynyl group, and a compound represented by [Formula 1], and can be applied to a polymer light emitting diode. In addition, the hole transport polymeric compound has excellent hole transport capabilities and has stability in solvents so as to be insoluble in a solvent used upon stacking other organic layers and blocking electrons well.

Abstract: An anthracene derivative represented by the following formula (1): In the formula (1), Z is a structure represented by the following formula (2).

Abstract: The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer.

Abstract: A phosphorescent compound is disclosed. The phosphorescent compound represented by the following Chemical Formula 1, where X, Y, and Z are each selected from the group consisting of carbon and nitrogen, and when x, y, and z are all carbon, R is any one selected from the group consisting of carbazole, ?-carboline, ?-carboline, ?-carboline, fluorine, dibenzothiophene, dibenzofuran, triphenylsilane, tetraphenylsilane, pyridine, quinoline, isoquinoline, pyrimidine, diphenylphosphineoxide, and substituents thereof.

Abstract: An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

Abstract: Included herein is the compound: and related compounds, and light-emitting devices comprising the same.

Abstract: An organometallic compound may be represented by Formula 1:

Abstract: It is an object of the present invention to provide an organometallic complex that can emit phosphorescence. In the following general formula (G1), X represents —O— or —N(R10)—. R1 to R9 each represent any of hydrogen, an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, an acyloxy group having 1 to 6 carbon atoms, a halogen group, a haloalkyl group, and an aryl group having 6 to 12 carbon atoms. In addition, R10 represents any of an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms, and a heteroaryl group having 4 to 10 carbon atoms. Moreover, M represents an element belonging to Group 9 or 10.

Abstract: Provided is an organic light emitting element that can be driven at a low constant voltage, exhibits high luminous efficiency, and has an excellent lifetime characteristic. The organic light emitting element includes: a pair of electrodes; and an organic compound layer arranged between the pair of electrodes, in which a layer to be brought into contact with one of the pair of electrodes in the organic compound layer contains a lithium complex compound represented by the following general formula [1]: in the formula [1], R1 to R16 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group that may be substituted with fluorine, an alkoxy group that may be substituted with fluorine, or a substituted or unsubstituted aryl group.

Abstract: The invention relates to benzo[h]benz[5,6]acridino[2,1,9,8-klmna]acridines, methods of their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising them.

Abstract: Provided are an organic electroluminescence device having high current efficiency and a long lifetime, and a biscarbazole derivative for realizing the device. The biscarbazole derivative has a specific substituent. The organic EL device has a plurality of organic thin-film layers including a light emitting layer between a cathode and an anode, and at least one layer of the organic thin-film layers contains the biscarbazole derivative.

Abstract: An electronic device package of the disclosure includes a gas barrier substrate, a base layer, an electronic device and a barrier film. The base layer is disposed on the gas barrier substrate and made of a light curing material. The electronic device is disposed on the base layer. The barrier film is disposed on the gas barrier substrate, in which the barrier film and the gas barrier substrate clad the electronic device and the base layer. The disclosure also provides a manufacturing method of an electronic device package.

Abstract: Present invention relates to methods of preparing molybdenum oxide inks and molybdenum oxide films, and use of the molybdenum oxide films as hole-transporting layers in optoelectronic devices. The ink for forming a hybrid molybdenum (VI) oxide (MoO3) film on a substrate comprises an ammonium molybdate, at least one inorganic salt different from ammonium molybdate, and a solvent or a solvent mixture.

Abstract: An optical sensor that can be produced at a low cost from inexpensive silicon fine particles as raw materials and a method for making the optical sensor are provided. In an optical sensor 1, a layer of epoxidized n-type silicon fine particles 24 coated with a coating film having a functional group is selectively fixed and bonded onto only a pattern portion of a surface of a transparent electrode 51 coated with a coating film having a first functional group, and a layer of p-type silicon fine particles 25 coated with a coating film having a third functional group is fixed and bonded thereon. The first and second functional groups and the second and third coupling groups are respectively fixed with each other via bonds formed between them and coupling reactive groups in a coupling agent.

Abstract: A compound represented by Formula 1. An organic electric element includes a first electrode, a second electrode, and an organic material layer between the first electrode and the second electrode. The organic material layer includes the compound. When the organic electric element includes the compound in an organic material layer, luminous efficiency, stability, and life span can be improved.

Abstract: The present invention relates inter alia to light emitting fibers for the application in general lighting, display backlit, information display, and for treatment and/or prophylaxis and/or diagnosis of diseases and/or cosmetic conditions. The fibers can be used for the preparation of any kind of canvas and light emitting devices.

Abstract: Provided is a novel light-emitting element and a light-emitting element with high light emission efficiency. A light-emitting element at least includes a first electrode, a first light-emitting layer over the first electrode, a second light-emitting layer over and in contact with the first light-emitting layer, a third light-emitting layer over and in contact with the first light-emitting layer, and a second electrode over the third light-emitting layer. One of the first light-emitting layer and the second light-emitting layer contains at least a green-light-emitting phosphorescent compound. The other of the first light-emitting layer and the second light-emitting layer contains at least an orange-light-emitting phosphorescent compound. The third light-emitting layer contains at least a blue-light-emitting hole-trapping fluorescent compound and an organic electron-transport compound that disperses the fluorescent compound.

Abstract: A highly reliable light-emitting device is provided. A light-emitting device in which problems due to a metal mask are prevented is provided. A light-emitting devi in which a problem due to the resistance of an upper electrode layer of a light-emitting element is prevented is provided. An electrode layer is provided over a substrate in advance, and an EL layer and an upper electrode layer are formed in the same pattern without use of a metal mask so as to overlap with the electrode layer. After that, the electrode layer is electrically connected to the upper electrode layer. As a connection method, a laser light irradiation method, a method in which physical pressure is applied, a method in which heating is performed under the state where physical pressure is applied, or the like is used.

Abstract: An organic EL element according to the present disclosure includes a first electrode having a light-transmission property, a functional layer which is located on the first electrode and which includes a light-emitting layer, and a second electrode which is located on the functional layer, the second electrode having an opening which exposes a part of the functional layer, the second electrode including a scatter reflection surface which scatters and reflects a light emitted from the light-emitting layer, the scatter refection surface opposing to the functional layer.

Abstract: A method of cutting an organic light-emitting display panel substrate into OLED display panels is disclosed. In one aspect, the method includes forming a plurality of OLEDs over a lower mother substrate, wherein the OLEDs are divided into a plurality of groups. The method also includes forming a plurality of sealant lines over at least one of an upper mother substrate or the lower mother substrate such that each sealant line surrounds a corresponding group of the OLEDs. The method further includes forming a plurality of assistance sealant lines between adjacent sealant lines, attaching the upper mother substrate to the lower mother substrate with the sealant lines and the assistance sealant lines interposed therebetween, and cutting the upper mother substrate and the lower mother substrate along the assistance sealant lines.

Abstract: The present invention provides a white OLED display device and a packaging method thereof. The white OLED display device includes: a glass cover plate, a color filter layer coated on the glass cover plate, a transparent protective layer covering the color filter layer, a hydrophobic layer self-assembled on the transparent protective layer, a desiccant layer disposed on the hydrophobic layer, and a TFT substrate disposed with a white OLED layer. The color filter layer, the transparent protective layer, the hydrophobic layer and the desiccant layer are sandwiched between the glass cover plate and the TFT substrate disposed with the white OLED layer. The white OLED display device provided by the invention disposes the hydrophobic layer on the transparent protective layer, which can avoid the occurrence of mura caused by uneven distribution of desiccant.

Abstract: Provided is an organic electroluminescent display device, including a substrate, an organic light-emitting device on the substrate, and an encapsulation layer formed on the organic light-emitting device and the substrate. The encapsulation layer includes an inorganic layer and a polymer organic layer alternatingly stacked with an intermediate layer formed of a first organic monomer between the inorganic layer and the polymer organic layer, and one surface of the intermediate layer is bonded to the inorganic layer through bonding sites on a surface of the inorganic layer and another surface of the intermediate layer is bonded to the organic layer by polymerization.

Abstract: A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.

Abstract: Provided is an organic EL device which can prevent invasion of moisture to an organic EL element. The organic EL device has an organic EL element in which a first electrode layer, a functional layer, and a second electrode layer are stacked in sequence on a transparent substrate having a planar expanse, and an inorganic sealing layer for sealing at least an emission area of the organic EL element. A soft adhesion layer is stacked directly onto the inorganic sealing layer with a planar expanse, and the soft adhesion layer is made of a resin, and has flexibility.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode on the substrate; and a thin film encapsulation layer including a first inorganic layer having a first density on the substrate and a second inorganic layer having a second density on the first inorganic layer, the second density being different from the first density, and the organic light emitting diode being encapsulated between the thin film encapsulation layer and the substrate.

Abstract: A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.

Abstract: It is an object of the present invention to provide an organic electroluminescent element with which no light extraction layer needs to be produced separately, which has a transparent electrode that is advantageous in terms of cost and can be formed by a simple film formation process, and which is excellent from the standpoint of light extraction efficiency. The present invention provides an organic electroluminescent element in which a substrate, a first electrode adjacent to this substrate, an organic layer including at least one organic light-emitting layer, and a second electrode adjacent to this organic layer are formed in this order, with this organic electroluminescent element being such that at least one of the aforementioned electrodes is a transparent electrode which is transparent, which contains at least one type of light scattering particles that are transparent and that have a primary particle size of at least 0.

Abstract: The invention relates to an organic light-emitting part having a functional layer stack (10), which functional layer stack has a substrate (1), a first electrode (2) above the substrate, an organic functional layer stack (4) above the first electrode, having an organic light-emitting layer (5), and a second electrode (3) above the organic functional layer stack, wherein a layer (1, 2, 3) of the functional layer stack (10) forms a carrier layer (6) for a diffusion layer (7), wherein the diffusion layer (7) has at least one first and one second organic component (71, 72) having indices of refraction that differ from each other, wherein the first organic component (71) is hydrophobic and the second organic component (72) is hydrophilic, wherein the glass transition temperature of a mixture of the first organic component (71) and the second organic component (72); lies above the room temperature and wherein the first organic component (71) and the second organic component (72) are partially segregated in the diff

Abstract: The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or the like and reliability by applying a scattering layer capable of exhibiting different scattering properties according to an angle of incident light may be provided.

Abstract: A display apparatus includes a substrate, a display unit, a first metal oxide layer on the display unit, and a second metal oxide layer. The display unit may include an emission region and a non-emission region. The second metal oxide layer may be on the first metal oxide layer in the non-emission region. The first metal oxide layer and the second metal oxide layer may each include a metal oxide, the transparency of which varies according to a degree of oxidization of the metal oxide.