Abstract: Disclosed herein are various chip lead frame and packaging structures, and methods of fabrication. In one embodiment, a lead frame can include: (i) a horizontal plate arranged at a bottom of the lead frame, where the horizontal plate is conductive; and (ii) a plurality of conductive bumps arranged on a surface of the horizontal plate, where the plurality of conductive bumps are configured to support and electrically connect to at least one chip. In one embodiment, a method of making the lead frame can include: (i) forming the horizontal plate by a mold; (ii) arranging a mask with a through-hole on the surface of the horizontal plate; (iii) electroplating conducting material on a portion of the horizontal plate that is exposed by the through-hole; and (iv) removing the mask after formation of the plurality of conductive bumps. Also, a package structure can be formed using the lead frame.

Abstract: A method of forming packaged semiconductor devices includes providing a lead frame sheet of flat no-lead lead frames having a semiconductor die on a die pad, terminals, and plastic encapsulation except on a back side of the sheet to provide an exposed thermal die pad and exposed back sides of the terminals. Partial sawing in saw lanes begins from the back side through the terminals terminating within the plastic encapsulation to provide exposed side walls of the terminals and of the plastic encapsulation. The exposed thermal pad and exposed back side of the terminals are all shorted together to form exposed electrically interconnected metal surfaces (interconnected surfaces). The interconnected surfaces are electroplated with a solder wetable metal or metal alloy plating layer. The interconnected surfaces are decoupled. A second sawing in the saw lanes finishes sawing through the plastic encapsulation to provide singulation, forming a plurality of packaged semiconductor devices.

Abstract: A semiconductor module includes: a semiconductor element; first and second main current passages for energizing the semiconductor element, the first and second main current passages being opposed to each other in such a manner that a first energization direction of the first main current passage is opposite to a second energization direction of the second main current passage, or an angle between the first energization direction and the second energization direction is an obtuse angle; and a coil unit sandwiched between the first and second main current passages. The coil unit includes a coil, which generates an induced electromotive force when a magnetic flux interlinks with the coil, the magnetic flux being generated when current flows through the first and second main current passages.

Abstract: An electronic multi-output device has a substrate including a first pad, a second pad and a plurality of pins. A first chip with a first transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The first chip with its first terminal is tied to the first pad. A second chip with a second transistor has a first terminal on one chip surface and a second and third terminals on the opposite chip surface. The second chip with its first terminal is tied to the second pad. The second terminals are connected by a discrete first metal clip and a second metal clip to respective substrate pins. A composite third chip has a third and a fourth transistor integrated so that the first terminals of the transistors are on one chip surface. The second terminals are merged into a common terminal. The patterned third terminals are on the opposite chip surface. The first terminals are vertically attached to the first and second metal clips, respectively.

Abstract: A packaged semiconductor device including a leadframe and a plurality of angularly shaped capacitors. The leadframe includes structures with surfaces and sidewalls. The angularly shaped capacitors are attached to surface portions of the leadframe structures. The angularly shaped capacitors have sidewalls coplanar with structure sidewalls. The angularly shaped capacitors includes a conductive material attached to the structure surface. The conductive material having pores covered by oxide and filled with conductive polymer. The angularly shaped capacitors topped by electrodes are made of a second metal.

Abstract: A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.

Abstract: Disclosed are semiconductor packages and methods of forming the same. In the semiconductor packages and the methods, a package substrate includes a hole not overlapped with semiconductor chips. Thus, a molding layer may be formed without a void.

Abstract: A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.

Abstract: An integrated circuit (IC) package substrate is provided. In one embodiment, the IC package substrate includes a dielectric layer having first and second opposing surfaces and a matrix of pillars disposed in the dielectric layer and arranged to receive a matrix of conductive elements of an IC die. Each pillar of the matrix of pillars is exposed at the first surface of the dielectric layer. Each pillar of the matrix of pillars extends through the dielectric layer to contact a metal layer attached to the second surface of the dielectric layer.

Abstract: A semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes copper or aluminum bonding wires or ribbons connecting the first terminal to an output of the RF semiconductor die, and gold bonding wires or ribbons connecting the capacitor to the output of the RF semiconductor die. The gold bonding wires or ribbons are designed to accommodate greater RF Joule heating during operation of the RF semiconductor die than the copper or aluminum bonding wires or ribbons. Corresponding methods of manufacturing are also described.

Abstract: A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.

Abstract: A semiconductor structure comprises a dielectric layer, a conduction piece, a first metal piece, a first protecting layer, and a second protecting layer. The conduction piece is surrounded by electrical materials of the dielectric layer. The first metal piece is over the dielectric layer and is in contact with the conduction piece. The first protecting layer covers dielectric materials of the dielectric layer that are not covered by the first metal piece. The second protecting layer is over the first protecting layer.

Abstract: A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

Abstract: Interconnect structures and methods for forming the same are described. A method for forming an interconnect structure may include: forming a low-k dielectric layer over a substrate; forming an opening in the low-k dielectric layer; forming a conductor in the opening; forming a capping layer over the conductor; and forming an etch stop layer over the capping layer and the low-k dielectric layer, wherein the etch stop layer has a dielectric constant ranging from about 5.7 to about 6.8.

Abstract: A method for forming a via in an integrated circuit comprises patterning a first opening in a first hardmask, the first hardmask disposed on a first organic self-planarizing polymer (OPL) layer, removing an exposed portion of the first OPL layer to define a cavity, removing an exposed portion of a second hardmask in the cavity, removing an exposed portion of a first dielectric layer disposed under the second hardmask to further define the cavity, removing an exposed portion of a first cap layer in the cavity, removing an exposed portion of a second dielectric layer to further define the cavity, removing an exposed portion of a second cap layer to further define the cavity, removing an exposed portion of a liner layer over a second conductive material in the cavity, and depositing a conductive material in the cavity.

Abstract: Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die.

Abstract: At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.

Abstract: An interconnect (124) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member (130), possibly dielectric, coated with a conductive material (144) which provides one or more conductive lines. In some embodiments, the conductive material covers a part, but not all, of the polymer member. In some embodiments, multiple conductive lines are formed on the polymer member. In some embodiments, the polymer member is conductive. Such interconnects replace metal bond wires in some embodiments. Other features are also provided.

Abstract: The present disclosure is directed to an interconnect structure. The metal interconnect structure has a metal body disposed over a semiconductor substrate and a projection extending from the metal body. A barrier layer continuously extends over the projection from a first sidewall of metal body to an opposing second sidewall of the metal body. A layer of dielectric material is disposed over the semiconductor substrate at a position abutting the metal body and the projection.

Abstract: An electronic component device, includes, a plurality of wiring layers including a component connection pad in a center part and an external connection pad in a periphery, an insulating layer formed on the wiring layers, and the insulating layer in which the component connection pad and the external connection pad are exposed, a frame member arranged on the insulating layer, and the frame member in which an opening portion is provided in an area of the center part in which the component connection pad is arranged, and a connection hole is provided on the external connection pad, an electronic component arranged in the opening portion of the frame member and connected to the component connection pad, a sealing resin formed in the opening portion of the frame member and sealing the electronic component, and a metal bonding material formed on the external connection pad in the connection hole.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: The embodiments of the present invention provide a display substrate and a manufacturing method thereof, as well as a display device including the display substrate. The display substrate may include a base substrate and a thin film transistor arranged on the base substrate, the thin film transistor having a gate, a gate insulating layer, an oxide semiconductor active layer as well as a source electrode and a drain electrode arranged on the base substrate sequentially; the display substrate may further include an ultraviolet blocking layer, the ultraviolet blocking layer having a first portion arranged between the base substrate and the oxide semiconductor active layer. By arranging the ultraviolet blocking layer, the influence of ultraviolet light on the oxide semiconductor active layer can be mitigated or avoided.

Abstract: A method of bonding components is disclosed. One embodiment of such a method includes applying both heat and pressure to a stack of components that includes an interposer with a reduced degree of warpage. Reducing the distance between the interposer and a first component of the stack of the components until a spacer prevents further reduction of that space. Then, cooling the stack of components while the pressure is maintained such that the degree of warpage of the interposer remains reduced.

Abstract: A semiconductor device which prevents a crack from occurring on a pad region is provided. The semiconductor device includes a lower pad, an upper pad which is formed above the lower pad, an insulation layer which is formed between the lower pad and the upper pad, a via net for electrically connecting the lower pad and the upper pad in the insulation layer, the via net having a net shape in which a unit grid is connected with its adjacent unit grids to form a net structure, and at least one via hole for electrically connecting the lower pad and the upper pad in the unit grid of the via net.

Abstract: Circuit arrangement embodiments that use relative groupings of energy pathways that include shielding circuit arrangements that can sustain and condition electrically complementary energy confluences.

Abstract: A method of manufacturing a semiconductor device, includes providing a multi-chip interconnection substrate having an upper surface and a lower surface, providing a semiconductor chip having a main surface and a back surface, making the back surface of the semiconductor chip and the upper surface of the multi-chip interconnection substrate face each other and mounting the semiconductor chips in the chip mounting areas of the multi-chip interconnection substrate through a bonding adhesive, coupling the electrode pads formed on the main surface of each of the semiconductor chips with the bonding pads formed on the upper surface of the multi-chip interconnection substrate by the conductive wires respectively, forming a resin sealing body by resin-sealing the semiconductor chips, the conductive wires, and the upper surface of the multi-chip interconnection substrate, and forming a plurality of solder balls to be coupled to a plurality of bump lands formed on the lower surface of the multi-chip interconnection sub

Abstract: A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

Abstract: In a provided mounting structure, an electronic component such as a semiconductor chip having a fragile film is mounted on a substrate such as a circuit board with higher connection reliability. A junction that connects an electrode terminal (4) of an electronic component (1) and an electrode terminal (5) of a substrate (2) contains an alloy (8) and a metal (9) having a lower modulus of elasticity than the alloy (8). The junction has a cross section structure in which the alloy (8) is surrounded by the metal (9) having the lower modulus of elasticity.

Abstract: A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels.

Abstract: The present invention provides a chip package that includes a semiconductor chip, at least one recess, a plurality of first redistribution metal lines, and at least one protrusion. The semiconductor chip has a plurality of conductive pads disposed on an upper surface of the semiconductor chip. The recess extends from the upper surface to a lower surface of the semiconductor chip, and is arranged on the side of the semiconductor chip. The first redistribution metal lines are disposed on the upper surface, electrically connected to the conductive pad individually, and extended into the recesses separately. The protrusion is disposed in the recess and located between the adjacent first redistribution metal lines.

Abstract: A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.

Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device is formed by connecting a top package and a bottom package together using a plurality of PoP connectors on the bottom package connected to corresponding connectors of the top package. The PoP device further comprises a plurality of dummy connectors contained in the bottom package and not connected to any corresponding connector in the top package.

Abstract: In one embodiment, an electronic package structure includes a substrate having one or more conductive plane layers formed therein. The substrate also includes a plurality of conductive pads on major surface configured to provide electrical interconnects to a next level of assembly. At least one conductive plane layer is configured to have cut-outs above the solder pads so that at least portions of the solder pad are not overlapped by the conductive plane layer.

Abstract: The present disclosure relates to a semiconductor substrate, a semiconductor package structure, and methods for making the same. A method includes providing a substrate and a carrier layer. The substrate includes a first patterned metal layer, a second patterned metal layer spaced from the first patterned metal layer, and a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer. The dielectric layer covers the second patterned metal layer. The dielectric layer defines first openings exposing the second patterned metal layer, and further defines a via opening extending from the first patterned metal layer to the second patterned metal layer. A conductive material is disposed in the via and electrically connects the first patterned metal layer to the second patterned metal layer. The carrier layer defines second openings exposing the second patterned metal layer.

Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Abstract: Reflow processes and apparatuses are disclosed. A process includes enclosing a package workpiece in an enclosed environment of a chamber of a reflow tool; causing an oxygen content of the enclosed environment of the chamber to be less than 40 ppm; and performing a reflow process in the enclosed environment of the chamber while the oxygen content is less than 40 ppm. An apparatus includes a reflow chamber, a door to the reflow chamber, an energy source in the reflow chamber, and gas supply equipment coupled to the chamber. The door is operable to enclose an environment in the reflow chamber. The energy source is operable to increase a temperature in the environment in the reflow chamber. The gas supply equipment is operable to provide a gas to the reflow chamber.

Abstract: A device package includes a plurality of dies, a molding compound extending along sidewalls of the plurality of dies, and a polymer layer over and contacting the molding compound. The molding compound comprises a non-planar top surface, and a total thickness variation (TTV) of a top surface of the polymer layer is less than a TTV of the non-planar top surface of the molding compound. The device package further includes a conductive feature on the polymer layer, wherein the conductive feature is electrically connected at least one of the plurality of dies.

Abstract: Die packages and method of manufacturing the same are disclosed. In an embodiment, a method of manufacturing a die package may include forming an encapsulated via structure including at least one via, a polymer layer encapsulating the at least one via, and a first molding compound encapsulating the polymer layer; placing the encapsulated via structure and a first die stack over a carrier, the at least one via having a first end proximal the carrier and a second end distal the carrier; encapsulating the first die stack and the encapsulated via structure in a second molding compound; and forming a first redistribution layer (RDL) over the second molding compound, the first RDL electrically connecting the at least one via.

Abstract: A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device.

Abstract: Provided is a light emitting diode package including: a molded portion having a housing; a plurality of light emitting chips housed in the housing; a plurality of main lead portions on which the plurality of light emitting chips is mounted, respectively; at least one sub-lead portion formed spaced from the main lead portions and electrically connected to at least any one of the plurality of main lead portions and the plurality of light emitting chips with wires for electrically connecting the plurality of light emitting chips each other; first space maintaining portions formed such that the plurality of light emitting chips respectively on the plurality of main lead portions are opposite to one another with one of the first space maintaining portions disposed therebetween; and second space maintaining portions formed on both sides of each of the first space maintaining portions.

Abstract: A light emitting device includes a substrate; a first metal film formed on the substrate; a plurality of light emitting elements arranged in a line, each comprising a second metal film on a lower face thereof, each having a quadrilateral outline; and a die bond placed between the first metal film and the second metal films to fix the second metal film on the first metal film. The substrate includes low wettability areas having wettability to the die bond lower than the first metal film. Each of the low wettability areas is disposed between two of the light emitting elements, and each of four sides of the quadrilateral outline is adjacent to the low wettability area different from the low wettability areas adjacent to one of the other three sides.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a semiconductor chip and a bump. The semiconductor chip has a contact pad on a major surface. The bump is disposed on the contact pad of the semiconductor chip. A solder layer is disposed on sidewalls of the bump.

Abstract: A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

Abstract: First, second, and third power wirings and plurality of first signal wirings are formed on the upper layer of a semiconductor substrate, and at least one second signal wiring is formed on the upper layer of the plurality of first signal wirings. First and second power wirings are mutually separated in the cell height direction and extended in the cell width direction. Third power wiring extends between the first and second power wirings in the cell width direction. The plurality of first signal wirings are separated from first, second, and third power wirings, and electrically connected to at least one of the plurality of circuit elements. At least one second signal wiring extends in the cell width direction, and electrically connected to at least one of the plurality of circuit elements and the plurality of first signal wirings.

Abstract: An electrostatic discharge (ESD) protection circuit includes an electrostatic discharge bus, first and second resistors coupled in series, first and second capacitors coupled in series, and first and second transistors. The first resistor is coupled to the electrostatic discharge bus. The first capacitor is coupled to the second resistor. The first transistor has a control input that is coupled between the first and the second resistors. The second transistor has a control input that is coupled between the first and the second capacitors.

Abstract: Disclosed herein are systems and method for voltage clamping in semiconductor circuits using through-silicon via (TSV) positioning. A semiconductor die is disclosed that includes a silicon substrate, a bipolar transistor having collector, emitter, base and sub-collector regions disposed on the substrate, and a through-silicon via (TSV) positioned within 35 ?m of the sub-collector region in order to clamp a peak voltage of the bipolar transistor at a voltage limit level.

Abstract: A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a doped region (1) of the first conductivity type. The well (2) of the transistor is doped lower than the well (5) of the diode.

Abstract: A transistor includes an emitter of a first conductivity type, base of a second conductivity type, collector of the first conductivity type, and cathode of a lateral suppression diode. The emitter is disposed at a top surface of the transistor and configured to receive electrical current from an external source. The base is configured to conduct the electrical current from the collector to the emitter. The base is disposed at the top surface of the transistor and laterally between the emitter and the collector. The collector is configured to attract and collect minority carriers from the base. The cathode of the first conductivity type is surrounded by the base and disposed between the emitter and the collector, and the cathode is configured to suppress a lateral flow of the minority carriers from the base to the collector.

Abstract: The present invention discloses an electrostatic protective device structure, which comprises a CMOS transistor that is disposed entirely above a P-type silicon substrate and arranged into a multi-finger-pattern structure, wherein on the outermost side on both sides of this electrostatic protective device structure is the source region of the MOS transistor, an active region of other drain region or source region in addition to the outermost source region on both sides is arranged in comb teeth pattern and in pairwise intersection, between the active regions of the adjacent drain region or source region is a field oxide region isolation, and on the drain region or source region is disposed a contact hole connecting metal with the active region, wherein the contact hole on the comb-tooth-pattern and pairwise intersected active region is located at the top of the comb-tooth-pattern active region, i.e. close to a side of the field oxide region isolation far away from the polysilicon gate.

Abstract: A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.