Abstract: The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.

Abstract: The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a solar cell assembly over the pattern, and applying pressure to adhere the assembly to the support.

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract: In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode.

Abstract: Solar cell array assemblies or modules and methods of making and using such solar cell array assemblies or modules, having discrete predefined pressure sensitive adhesive (PSA) regions thereon. In certain embodiments, the solar cell array modules may be conveniently mounted on the surface of a panel of a space vehicle or satellite with the discrete predefined PSA regions.

Abstract: A method of forming an electrode pattern includes: forming, on a base material, a seed layer having a pattern corresponding to the electrode pattern; forming an organic material layer on the seed layer; producing an electrode layer transfer sheet by forming an electrode layer on the organic material layer via an electroplating process using the seed layer as a seed; disposing the electrode layer transfer sheet on a substrate on which the electrode pattern is to be formed such that the electrode layer is in contact with the substrate and pressure bonding the electrode layer to the substrate; and in a state in which the electrode layer is pressure bonded to the substrate, removing the base material along with the organic material layer and the seed layer to transfer the electrode layer to the substrate.

Abstract: A method of producing a semiconductor layer sequence includes providing a growth substrate having a growth surface on a growth side, growing a first nitride semiconductor layer on the growth side, growing a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer includes at least one opening or at least one opening is produced in the second nitride semiconductor layer or at least one opening is created in the second nitride semiconductor layer during the growing process, removing at least one part of the first nitride semiconductor layer through the openings in the second nitride semiconductor layer, and growing a third nitride semiconductor layer on the second nitride semiconductor layer, wherein the third nitride semiconductor layer covers the openings at least in places.

Abstract: Provided is a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least 530 nm, wherein the light emission efficiency is greater than the conventional art. A semiconductor light-emitting element has a peak emission wavelength of greater than or equal to 530 nm, and comprise: an n-type semiconductor layer; an active layer formed above n-type semiconductor layer; and a p-type semiconductor layer formed above the active layer. In the active layer, a first layer composed of InX1Ga1-X1N (0?X1?0.01), a second layer composed of InX2Ga1-X2N (0.2<X2<1), and a third layer composed of AlY1Ga1-Y1N (0<Y1<1) are laminated, and at least the first layer and the second layer are formed cyclically.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Abstract: An epitaxial growth substrate includes a base member, and a concave-convex pattern having a plurality of concavities and a plurality of convexities and formed on the base member, wherein: each of the plurality of convexities has an elongated shape which extends while winding (waving) in a plane view; and the plurality of convexities in the concave-convex pattern have extending directions, bending directions and lengths which are non-uniform among the plurality of convexities. There are provided an epitaxial growth substrate which can be produced efficiently and which is capable of improving the light-emitting efficiency of a light-emitting element; and a light-emitting element using the epitaxial growth substrate.

Abstract: A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.

Abstract: Disclosed are a light emitting device, a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants.

Abstract: A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one of the p-type layers. Utilizing the disclosed structure and methods, a device capable of emitting light over a wide spectrum may be made without the use of phosphor materials.

Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.

Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

Abstract: A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.

Abstract: An LED lamp includes a base connected to an optically transmissive enclosure. An LED assembly for emitting light when energized through an electrical path is in the enclosure. The LED assembly comprises a LED array in a tube and a fill material filling the tube. An optic element comprising at least one LED assembly defines a lighted member in the enclosure. The fill material may include combinations of an encapsulant, a phosphor and a thermally conductive material.

Abstract: A light emitting device includes a light emitting element, a wire connected to the light emitting element, and a substrate supporting the light emitting element. The substrate is formed with a first recess and a second recess that are open in a common surface of the substrate. The first recess includes a first bottom surface and a first side surface connected to the first bottom surface, and the light emitting element is disposed on the first bottom surface. The second recess includes a second bottom surface and a second side surface connected to the second bottom surface, and the wire is bonded to the second bottom surface. Both of the first side surface and the second side surface reach the common surface. The first side surface is connected to both of the second bottom surface and the second side surface. The opening area of the first recess is larger than the opening area of the second recess.

Abstract: A light-emitting device includes a conversion element including a light-emitting surface provided with a conversion layer, wherein the conversion layer contains a matrix material and a converter material, both the matrix material and the converter material are materials that can be vaporized under high vacuum, the matrix material and the converter material are applied to the light-emitting surface by vaporization under a high vacuum, and the matrix material has the structural formula where R1, R2, R3, R4 and X may be mutually independently selected from the group comprising F, Cl and H, and n>=2.

Abstract: The invention provides a luminescent material (10) based on quantum dots (100), wherein the quantum dots (100) have inorganic capping agents (110), wherein the luminescent material (10) comprises particles (12) having an inorganic salt matrix (14) hosting the quantum dots (100) with inorganic capping agents (110), wherein the luminescent quantum dots (100) have an outer layer (105). The invention also provides a method for the production of such luminescent material (10). The new luminescent material can be used and processed as conventional particulate luminescent material.

Abstract: The present invention relates to an Mn4|-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: A2MF6:Mn4?, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises a Ca-containing compound on a particle surface.

Abstract: The present invention relates to a white light LED lamp and a filament. The white light LED filament comprises light emitting units and a strip-shaped fluorescent wafer(s) at least positioned at one side of the light emitting units, wherein the light emitting units are blue-emitting chips connected by a metal wire or an electric conductive circuit, and wherein electrodes are arranged at the end(s) of the fluorescent wafer. Without any lens, the filament of the present invention has a simple structure. A white light LED lamp using the filament realizes a 360° stereo-luminescence, and shows the advantages of low cost, excellent heat radiation, high luminous efficacy and so on.

Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: A method of detaching a sealing member of a light emitting device which has a substrate, alight emitting element mounted on the substrate and a sealing member that seals the light emitting element, wherein a release layer and/or an air layer is/are provided between the substrate and the sealing member; and the sealing member is detached from the substrate at the release layer and/or the air layer.

Abstract: A light emitting device comprises a package having a recess; a light emitting element mounted in the recess of the package; a light transmissive member provided above the light emitting element; a sealing resin that seals the recess of the package; and a fluorescent material contained in the sealing resin. The fluorescent material is distributed to a side of the light emitting element in a greater amount than to above the light emitting element, a side surface of the light emitting element is exposed to the sealing resin, and a portion of the light transmissive member protrudes from the sealing resin.

Abstract: The present invention relates to a novel white light LED packaging structure and a process for manufacturing the same. An anti-blue light reflection film(s) is deposited on one surface of a fluorescent wafer, wherein the surface is attached to a blue-emitting chip. The anti-blue light reflection film(s) on the wafer can effectively prevent the incident blue light from reflecting on the surface of the wafer, increase the availability of the blue light and reduce the reflection loss of yellowish green light in the direction towards the chip, and thereby improving the whole luminous efficacy of the device. The white light LED packaging structure of the present invention has high fluorescence efficiency, and is suitable for applying in high-power white light LED illumination field.

Abstract: An optoelectronic component includes a first layer sequence being designed to emit or to detect electromagnetic radiation, and a second layer sequence being arranged at a first side of the first layer sequence and designed to reflect the electromagnetic radiation emitted or to be detected by the first layer sequence. The second layer sequence has a first reflector layer, a second reflector layer and an adhesion promoting layer. The first reflector layer contains a first material and is arranged at a first side of the second layer sequence facing the first side of the first layer sequence, the adhesion promoting layer contains a second material and is arranged at a second side of the second layer sequence facing away from the first side of the first layer sequence, and the second reflector layer contains the first material and is arranged between the first reflector layer and the adhesion promoting layer.

Abstract: A light-emitting apparatus includes a reflective layer including a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer; a light-emitting device disposed in the cavity, the light-emitting device including a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and a wavelength conversion layer that fills the cavity and covers a top surface and a side surface of the light-emitting device, wherein the wavelength conversion layer exposes at least a portion of the electrode to an outside.

Abstract: A light emitting device (10) includes light emitting elements (12), conductor wirings (14), and alignment marks (18) formed on a substrate (11). The alignment marks (18) and the conductor wirings (14) are formed by printing.

Abstract: A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.

Abstract: To provide a manufacturing method of a thermoelectric conversion element, including: a holding step of holding thermoelectric conversion members (2, 3) while exposing at least one side end portions of at least one of the thermoelectric conversion members; a coating step of coating the exposed end portions of the thermoelectric conversion member with metal powder (13); and an electrode forming step of forming an electrode (4a ) at the end portions of the thermoelectric conversion member by sintering the metal powder.

Abstract: An illumination assembly for a vehicle includes an energy harvesting module disposed on an exhaust pipe of the vehicle. The energy harvesting module includes an energy harvesting device configured to capture heat and to convert the harvested heat to electrical energy. An illumination member is electrically connected to the energy harvesting module and is configured to be illuminated by the electrical energy supplied from the energy harvesting device.

Abstract: A Body Heat Powered Portable Wireless Transmitter contains a Thermo Electric Generator, an energy Harvesting System, a Control System and a Wireless Transmitter. The Wireless transmission medium could include but not exhaustively, RF, Ultrasonic or Infrared. The application can range from a keyfob transmitter or a Remote Keyless Entry (RKE) System for a car, an infrared remote control for a TV or Hi-Fi or a person location device which can be worn around the wrist like a watch to allow hospital staff to track Alzheimer's patients, allow parents to track their children, detect trapped people from the effects of earthquakes and Tsunamis or an RF ID tag for security purposes. The device can also be used for sensor applications (Wireless Data Capture) such as a fitness tracker or health monitor such as a wireless ECG (Electrocardiogram) monitor to collect patient vitals and wirelessly transmit the data to hospital staff.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: The claimed invention can be used for the manufacturing of thermoelectric modules. The method includes the manufacturing of rods from a thermoelectric material by a hot extrusion method. Then, the side surface of the rods is preliminarily treated. Then, a water-based paint system with fluorine rubber is applied on the side surface of the rods by a cathode or anode electrodeposition method and a protective polymeric coating is produced. Then, the rods are washed and thermally cured. The rods are cut and semiconductor branches of a specified length are produced. After that, an antidiffusion metallic coating is applied on the face surfaces of the produced semiconductor branches so that the edge is in contact with the protective polymeric coating without crossing it. The claimed process enable an improvement in the chemical, thermal, and mechanical resistance and provision of a high adhesion and plasticity of the polymeric coating of the thermoelectric branches.

Abstract: An insulating substrate is prepared. In this substrate, plural via holes penetrating in a thickness direction are filled with a conductive paste. This paste is produced by adding an organic solvent to a powder of an alloy, and by processing the power of the alloy to a paste. The substrate is then pressed from a front surface and a back surface of the substrate, while being heated. The conductive paste is solid-phase sintered and interlayer connecting members are formed. A front surface protective member is disposed on a front surface of the substrate and a back surface protective member is disposed on a back surface of the substrate and a laminate is formed. The laminate is integrated by a lower pressure being applied while heating at a lower temperature, compared to the temperature and pressure in the process of forming the interlayer connecting members.

Abstract: To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed of a carbon material. The oxide semiconductor layer 4 includes a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the lower electrode layer 3 and the upper electrode layer 5 and includes a first resistivity. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the upper electrode layer 5 and includes a second resistivity different from the first resistivity.

Abstract: A method for manufacturing an integrated circuit (IC) is provided. An etch is performed into an upper surface of an insulating layer to form an opening. A plurality of electrode layers is formed filling the opening. Forming the plurality of electrode layers comprises repeatedly forming an electrode layer conformally lining an unfilled region of the opening until the opening is filled. Forming the electrode layer comprises depositing the electrode layer and treating a surface of the electrode layer that faces an interior of the opening. A planarization is performed into the plurality of electrode layers to the upper surface of the insulating layer.

Abstract: An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

Abstract: A deposition apparatus includes a vacuum chamber, a substrate disposed in the vacuum chamber, a deposition source disposed in the vacuum chamber and facing the substrate to provide a deposition material onto the substrate, a laser oscillator generating a first laser beam, and an optical unit connected to a first side of the vacuum chamber and splitting the first laser beam to generate a plurality of mask laser beams. The mask laser beams are irradiated into the vacuum chamber to be disposed between the substrate and the deposition source. The deposition material making contact with the mask laser beams is oxidized, and the deposition material passing through the mask laser beams is deposited on the substrate.

Abstract: The present invention provides a vapor deposition apparatus, a vapor deposition method, and a method for producing an organic electroluminescent element which can control the vapor deposition rate on the substrate in the entire vapor deposition region with excellent precision. The vapor deposition apparatus of the present invention that forms a film on a substrate includes a first thickness monitor; and a vapor deposition unit including a vapor deposition source, the apparatus being configured to perform vapor deposition while controlling the distance between a portion of the vapor deposition source designed to eject a vaporized material and a surface of the substrate on which the vapor deposition is performed, based on a measurement result from the first thickness monitor.

Abstract: A method of peeling a laminate according to the disclosure includes: forming a first adhesive layer on a first substrate, the first adhesive layer having adhesive force that satisfies the following Expression (1) and one or both of the following Expressions (2) and (3); firmly attaching a second substrate onto the first adhesive layer; forming a first functional layer on the second substrate; and peeling off the first substrate from the second substrate.

Abstract: The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.

Abstract: A material for an organic electroluminescent device having high emission efficiency is represented by following Formula 1: The material represented by Formula 1 may be included in at least one layer selected from a plurality of layers between an anode and an emission layer of an organic EL device.

Abstract: An organic light-emitting device includes a first electrode; a second electrode facing the first electrode; and an organic emission layer between the first electrode and the second electrode. The organic emission layer may include a compound represented by Formula 1: wherein Formula 1 contains an indenoindenyl moiety. The compound may increase hole mobility in the device when used as a hole transport and/or hole injection material, thereby improving its lifetime, current, voltage, and luminescent characteristics.

Abstract: Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple construction. The device is an organic electroluminescent device having organic layers including a light-emitting layer between an anode and a cathode laminated on a substrate, in which a carborane compound is incorporated into at least one layer of the organic layers, or is incorporated as a host material into a light-emitting layer containing a phosphorescent light-emitting dopant and the host material. The carborane compound has a structure in which a N-containing fused aromatic ring is bonded to a carborane ring. The N-containing fused aromatic ring is a quinoline ring or has a structure obtained by substituting 1 to 3 ring-forming carbon atoms in a quinoline ring with N atoms.

Abstract: A light-emitting element containing a light-emitting material with high luminous efficiency is provided. The light-emitting element includes a host material and a guest material. The host material includes a first organic compound and a second organic compound. In the first organic compound, a difference between a singlet excitation energy level and a triplet excitation energy level is larger than 0 eV and smaller than or equal to 0.2 eV. The HOMO level of one of the first organic compound and the second organic compound is higher than or equal to that of the other organic compound, and the LUMO level of the one of the organic compounds is higher than or equal to that of the other organic compound. The first organic compound and the second organic compound form an exciplex.

Abstract: The present teachings relate to organic semiconductor formulations including an organic semiconducting compound in a liquid medium, where the liquid medium includes (1) a compound in liquid state that has electronic properties complementary to the electronic structure of the organic semiconducting compound and optionally (2) a solvent or solvent mixture for solubilizing the organic semiconducting compound. The present formulations can be used as inks in the fabrication of organic semiconductor devices.