Abstract: In a built-in coil substrate, coil conductor patterns are provided on insulating base materials. Coil interlayer connection conductors, which provide interlayer connection between the coil conductor patterns, are provided on the insulating base materials and made of conductive paste. First and second external electrodes are provided on a first principal surface of a multilayer body. One of the coil conductor patterns is connected to the first external electrode by first-external-electrode connection conductors made of the conductive paste. Another one of the coil conductor patterns is connected to the second external electrode by a second-external-electrode connection conductor. The second-external-electrode connection conductor is a metal film provided in a through hole that extends through the multilayer body in a stacking direction in which the insulating base materials are stacked.

Abstract: The magnetic component comprises: a magnetic core comprising an E-shaped lower part, an E-shaped upper part and an I-shaped central part closing both the lower part and the upper part such that the lower part and the central part define two lower magnetic circuits and the upper part and the central part define two upper magnetic circuits; a first coil and a second coil wound around a central branch of the lower part to be coupled to one another; a third coil wound around a central branch of the upper part, the third coil being connected in series with the second coil. The central part has a reluctance lower than both that of the lower part along each lower magnetic circuit and that of the upper part along each upper magnetic circuit.

Abstract: A coil component including: a magnetic core that contains an Fe-based magnetic powder and a binding agent, the Fe-based magnetic powder having an insulator film and having a volume resistivity of 107 ?·cm or more; and a coil conductor. The average particle size D50 of the Fe-based magnetic powder is 5 ?m or smaller and the magnetic permeability of the magnetic core is 5 or more.

Abstract: A common mode filter includes a body portion including an external electrode disposed outwardly of the body portion, a plurality of coil electrode layers disposed within the body portion and electrically connected to the external electrode, and a shunt electrode layer disposed between portions of the plurality of coil electrode layers and having a coil shape.

Abstract: A method of manufacturing an inductor includes forming a step portion having a high-resolution pattern by using a photosensitive layer with photosensitive characteristics, and forming a low-resistance coil pattern by filling the step portion with a metal paste having a lower resistance than a photosensitive metal paste.

Abstract: An embedded coil assembly embodiment includes a ferrite ring having an annular axis. The ferrite ring is positioned on a conductive metal surface. A plurality of separate, spaced apart conductive structures extend over the ferrite ring and are attached to the conductive metal surface in a first region of the conductive surface positioned radially outwardly of the annular axis of the ferrite ring and in a second region of the conductive surface positioned radially inwardly of the annular axis of the ferrite ring. An encapsulation layer covers, the ferrite ring and at least a portion of the plurality of conductive structures.

Abstract: First and second wires form a wire assembly by being wound around a winding core portion together. The wire assembly includes a twisted wire portion, an inner layer portion, an outer layer portion, a plurality of outward transition portions, and an inward transition portion. The outer layer portion includes a first outer layer portion which is connected to one of the outward transition portions extending from an intermediate position of the inner layer portion and connected to the inward transition portion. The inward transition portion extends to an intermediate position of the inner layer portion.

Abstract: A small size transformer is provided with hollow bobbin which has flange-shaped end parts at least on both ends of winding shaft part around which conducting wire formed of reinforced insulation wire is wound, and is formed by through-hole being pierced between the flange parts, box-shaped cover member to be covered on an outside of the bobbin, and magnetic core part formed by combining two E-shaped core members in a manner of surrounding side surface outer circumferential part of cover member, in which middle leg portions of the core members are configured in a manner of being inserted into the through-hole of the bobbin, in which sidewall parts of cover member to be interposed between the wiring part wound around bobbin and the core members are not provided therebetween.

Abstract: The present invention relates to a bobbin assembly (1000-3) comprising: a plurality of winding slots (1000-4), each of which comprises a winding (10) with one turn per layer; and a plurality of isolation slots (1000-5), each of which comprises one single loop of the winding (10), and each of the isolation slots (1000-5) is adjacent to at least one winding slot (1000-4) of the plurality of winding slots (1000-4), and each of the winding slots (1000-4) is adjacent to at least one isolation slot (1000-5) of the plurality of isolation slots (1000-5).

Abstract: A method of manufacturing an amorphous alloy magnetic core, which includes preparing a layered body by layering amorphous alloy thin strips one on another, and has one end face and another end face in a width direction of the thin strips and an inner peripheral surface and an outer peripheral surface orthogonal to a layering direction of the thin strips; forming a hole passing through from the one end face of the layered body as a starting point; subjecting the layered body to which the hole has been formed to a heat treatment while measuring an internal temperature of the hole; and forming a resin layer which blocks the hole and covers at least a part of the one end face by coating and curing a two-liquid mixed type epoxy resin composition having a viscosity of from 38 Pa·s to 51 Pa·s and a T. I. value of from 1.6 to 2.7 on at least a part of at least the one end face of the layered body after being subjected to the heat treatment.

Abstract: In a multilayer ceramic capacitor, outer electrodes include base electrode layers including a conductive metal and a glass component on a ceramic multilayer body, conductive resin layers including a thermosetting resin and a metal component on the base electrode layers such that exposed portions of the base electrode layers are exposed at least at one corner on one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof, and plating layers on the conductive resin layers and the exposed portions of the base electrode layers. The exposed portions of the base electrode layers are in direct contact with the plating layers at least at one corner on the one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof.

Abstract: A metallized film capacitor includes: a metallized film columnar body including two metallized films that are laminated and wound, the two metalized films each including a vapor-deposited metal film with a plurality of vapor-deposition-free slits and fuse portions each interposed between the vapor-deposition-free slits, and a polyvinylidene fluoride dielectric film, the metallized film columnar body having two electrode extraction surfaces; metal-sprayed parts disposed respectively on the two electrode extraction surfaces: and outgoing terminals joined respectively to the metal-sprayed parts. Each of the two metallized films has a shape with successive sloped ridges and valleys in a cross-section orthogonal to a winding direction, and the two metallized films are laminated such that the ridges and valleys of one of the metallized films are aligned with the ridges and valleys of the other one of the metallized films.

Abstract: A dye-sensitized solar panel includes a titanium nanoparticle layer and a plant-derived photo-sensitizer supported on the titanium nanoparticle layer. The photo-sensitizer can be extracted from chard (B. vulgaris subsp. cicla), and the titanium nanoparticle layer includes titanium nanoparticles synthesized using henna (Lawsonia inermis). The titanium nanoparticle layer can, in addition to titanium nanoparticles, include zinc oxide nanoparticles.

Abstract: The dye-sensitized solar panel includes a metal oxide layer and an organic photosensitizing dye on the metal oxide layer. The organic photosensitizing dye is extracted from chard (B. vulgaris subsp. cicla), and the metal oxide layer is composed of zinc oxide nanoparticles synthesized using B. vulgaris subsp. cicla dye as a reducing agent. A working electrode is mounted on a first transparent substrate. The working electrode includes a metal electrode and the metal oxide layer formed thereon. A counter electrode is mounted on a second transparent substrate. An electrolyte is sandwiched between the working electrode and the counter electrode.

Abstract: A dye-sensitized solar panel includes a titanium nanoparticle layer and a plant-derived photo-sensitizer supported on the titanium nanoparticle layer. The photo-sensitizer can be extracted from chard (the cicla cultivar group of B. vulgaris subsp. cicla), and the titanium nanoparticle layer includes titanium nanoparticles synthesized using henna (Lawsonia inermis). The titanium nanoparticle layer can, in addition to titanium nanoparticles, include zinc oxide nanoparticles.

Abstract: An improved capacitor is described herein. The capacitor comprises a working element wherein the working element comprises an anode comprising a dielectric thereon and an anode conductive polymer layer on the dielectric. The capacitor also includes a cathode comprising a cathode conductive polymer layer and a conductive separator between the anode and said cathode. An anode lead is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Abstract: An electrical apparatus of an electrical power distribution network may be controlled by accessing, at a control system, one or more operating parameters, the operating parameters being associated with the operation and control of the electrical apparatus; adjusting one or more of the accessed operating parameters, the adjustment being based on data associated with the electrical apparatus; and generating a control signal for the electrical apparatus based on at least one adjusted parameter, the control signal being sufficient to control the electrical apparatus in accordance with the adjusted operating parameter, where controlling the electrical apparatus includes causing contacts of the electrical apparatus to disconnect from each other to prevent electrical current from flowing through the electrical apparatus and causing the contacts of the electrical apparatus to connect to each other to allow current to flow through the electrical apparatus.

Abstract: A key structure includes a pedestal with a sliding groove, an upper cover, a triggering element, and a spring strip. The spring strip is movable within the sliding groove. The triggering element is arranged between the pedestal and the upper cover, and located beside the spring strip. When a keycap of the key structure is depressed, the triggering element is moved relative to the pedestal to push the spring strip. In response to the elasticity of the pushed spring strip, the spring strip is slid within the sliding groove to collide with the upper cover. Consequently, the key structure generates sound surely.

Abstract: A key structure includes a first movable plate, a second movable plate, a keycap, a first linkage lever and a second linkage lever. The second movable plate is disposed over the first movable plate. The keycap is disposed over the second movable plate. The first linkage lever is connected with the keycap and the first movable plate. The second linkage lever is connected with the keycap and the second movable plate. While the first movable plate is moved in a first direction and the second movable plate is moved in a second direction, the first linkage lever and the second linkage lever are moved in different directions, so that a height of the keycap is reduced.

Abstract: A keyswitch device includes a base plate, a membrane circuit board, a light source, and a keyswitch assembly. The membrane circuit board is disposed on the base plate and includes a reflective film layer, a transmissive film layer, and a light guide spacer. The reflective film layer is located on the base plate. The transmissive film layer is located over the reflective film layer. The light guide spacer has an accommodating space. The reflective film layer and the transmissive film layer are respectively located at opposite sides of the light guide spacer. The light source is disposed between the reflective film layer and the transmissive film layer and located in the accommodating space. The keyswitch assembly is disposed on the membrane circuit board.

Abstract: A key able to accept a label for a keypad used in controlling electrically operated devices, wherein the key structure accepts and secures an interchangeable label, and which forms an impermeable barrier to the electrical contacts of a programmable circuit board.

Abstract: The disclosure relates to an arrangement and a method for switching an open contact gap by a switching device, wherein a galvanically isolated energy transmission of high-frequency energy provides an actuator energy for at least one switching device, in particular a vacuum interrupter. For the purpose of energy transmission, the switching device is connected to the high-frequency source via a dielectric resonator, the switching device being designed such as to be configured for converting the transmitted energy into actuator energy.

Abstract: A temperature switch 1 includes first terminal unit 2 having a first terminal 5 and a first fixed contact 6, a switch body unit 3 including a bimetal element 22 in which both ends engage a movable plate 15 holding, via an tongue portion 17, first and second fixed contacts 6 and 8 arranged in an internal center portion of an insulation material 10 at prescribed intervals and also holding a movable contact 18 arranged above them, and a second terminal unit 4 having a second terminal 7 and the second fixed contact 8. The first terminal unit 2, the switch body unit 3, and the second terminal unit 4 are sequentially arranged in line. At an ambient temperature, the bimetal element 22 deforms into a convex shape in the contact direction so as to push out the tongue portion 17 and the movable contact 18 at the center of the convex shape, and the movable contact 18 is closed with respect to the first and second fixed contacts 6 and 8 so that a current flows between the first and second terminals 5 and 7.

Abstract: A circuit breaker including a case, a trip mechanism, and a trip lever moveable between a first position and a second position. The trip lever includes a first end selectively contacting the trip mechanism and a second end opposite the first end. The circuit breaker also includes a biasing device including a housing coupled to the case and a lever arm coupled to the housing. The lever arm includes an engagement surface in contact with the second end and configured to move between an initial position corresponding to the first position and a final position corresponding to the second position. The biasing device also includes a bias member extending between the housing and the lever arm and biasing the engagement surface against the second end. The lever arm exerts a first torque in the first position and exerts a second torque different from the first torque in the second position.

Abstract: A breaker actuator includes a slide plate, at least one actuator lever, and a drive plate. The slide plate is linearly movable. The actuator lever is rotatable about a pivot. The actuator lever engages the slide plate and rotational movement of the actuator lever is actuatable by linear movement of the slide plate. The drive plate is moveable between an off position and an on position and is actuatable by rotational motion of the at least one actuator lever. A method for actuating a breaker includes moving a slide plate linearly from a first position to a second position, rotating at least one actuator lever about a pivot from a first position to a second position by the linear movement of the slide plate, and moving a drive plate in front of an electrical breaker from an off position to an on position by the rotational motion of the actuator lever.

Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

Abstract: An ion source includes an external housing, an electrically conductive tip, a gas supply system, configured to supply an operating gas into the neighborhood of the tip, and a cooling system configured to cool the tip. The gas supply system includes a first tube with a hollow interior, and a chemical getter material is provided in the hollow interior of the tube.

Abstract: A permanent-magnet particle beam apparatus and method incorporating a non-magnetic portion for tunability are provided. The permanent-magnet particle beam apparatus includes a particle beam emitter that emits a charged particle beam, and includes a set of permanent magnets forming a magnetic field for controlling condensing of the charged particle beam. The permanent-magnet particle beam apparatus further includes a non-magnetic electrical conductor component situated with the set of permanent magnets to control a kinetic energy of the charged particle beam moving through the magnetic field.

Abstract: An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.

Abstract: A device for detecting X-rays radiated out of a substrate surface, said device comprising at least one X-ray detector, a resolver grating and a modulator grating, said resolver grating with at least one opening facing towards said X-ray detector is arranged in front of said X-ray detector. Said modulator grating is provided between said resolver grating and said substrate at a predetermined distance from said resolver grating and said substrate, where said modulator grating having a plurality of openings in at least a first direction, wherein said x-rays from said surface is spatially modulated with said modulator grating and resolver grating.

Abstract: The present invention relates to an improved composition for ion implantation. A dopant source comprising BF3 and an assistant species comprising Si2H6wherein the assistant species in combination with the dopant gas produces a boron-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

Abstract: An electron-beam induced plasma is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as atmospheric plasma source and may be configured to provide a plasma column of very fine diameter and controllable characteristics. The plasma column traverses the atmospheric space between the plasma source into the atmosphere and the device of interest and acts as an electrical path to the device of interest in such a way that a characteristic electrical signal can be collected from the device. Additionally, by controlling the gases flowing into the plasma column the probe may be used for surface modification, etching and deposition.

Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

Abstract: Systems and methods for tuning an impedance matching network in a step-wise fashion for each state are described. By tuning the impedance matching network in a step-wise fashion for each state instead of directly achieving optimum values of a radio frequency (RF) for each state and directly achieving an optimal value of a combined variable capacitance for each state, processing of a wafer using the tuned optimal values becomes feasible.

Abstract: A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

Abstract: A method for parallel analysis in mass spectrometry and ion mobility spectrometry includes enabling a sample to be subjected to a chromatography separation; ionizing the chromatography separated sample and then feeding the sample into a succeeding stage device for analysis, comprising: analyzing at least part of the ionized sample through an ion mobility spectrometer to obtain an ion mobility spectrum, and analyzing at least other parts of the sample through a mass spectrometer to obtain a mass spectrum, wherein the period for obtaining each ion mobility spectrum and each mass spectrum being not longer than 5 s; and performing data post-processing, comprising: correlating the peaks in said ion mobility spectrum and the peaks in said mass spectrum with a deconvolution algorithm according to the consistency in retention time or elution profile for the same analyte in said chromatography.

Abstract: An apparatus for connecting an ionisation probe assembly to a mass and/or ion mobility spectrometer is disclosed. The apparatus comprises: an attachment member for releasably attaching a probe assembly to the apparatus; a cap for enclosing the attachment member; wherein the apparatus is operable to deliver a voltage to a probe assembly only when the cap is arranged to enclose the attachment member; and wherein the cap is configurable to enclose the attachment member when a probe assembly is attached to the apparatus.

Abstract: After a sample such as a biomedical tissue section is attached to an electrically-conductive slide glass (S1), the film layer of a matrix substance is appropriately formed by vapor deposition so as to cover the sample (S2). The crystal of the matrix substance in the film layer is very fine and uniform. Subsequently, the slide glass on which the matrix film layer is formed is placed in a vaporized solvent atmosphere, and the solvent infiltrates into the matrix film layer (S3). When the solvent sufficiently infiltrated is vaporized, a substance to be measured in the sample takes in the matrix and re-crystallized. Furthermore, the matrix film layer is formed again on the surface by the vapor deposition (S4). The added matrix film layer absorbs excessive energy of a laser beam during MALDI, which suppresses the denaturation of the substance to be measured and the like, so that high detection sensitivity can be achieved while high spatial resolution is maintained.

Abstract: Provided is a time-of-flight mass spectrometer including: an ionization part receiving electron beams to thereby emit ions; a cold electron supply part injecting the electron beams to the ionization part; an ion detection part detecting the ions emitted from the ionization part; and an ion separation part connecting the ionization part and the ion detection part, wherein the cold electron supply part includes a microchannel plate receiving ultraviolet rays to thereby emit the electron beams, the ions emitted from the ionization part pass through the ion separation part to thereby reach the ion detection part, and the ion separation part has a straight tube shape.

Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

Abstract: A wafer is bonded to a support plate by cutting off, with a cutting blade, an annular portion of the bonded wafer which extends from the outer peripheral edge of the bonded wafer to a position that is spaced radially inwardly toward the center of the bonded wafer by a predetermined distance. Bonding is done by a method that includes a captured image forming step of irradiating the outer peripheral edge of the bonded wafer with light emitted from an irradiating unit and passing through a through hole, and imaging the outer peripheral edge of the bonded wafer with an imaging camera disposed in facing relation to the irradiating unit with the bonded wafer interposed therebetween, thereby to capture an image, and an outer peripheral edge position detecting step of detecting an outer peripheral edge position of the bonded wafer on the basis of the captured image.

Abstract: The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlxGa1?xN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer.

Abstract: A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.

Abstract: A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.

Abstract: A starting semiconductor structure includes a layer of filler material, a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. The starting semiconductor structure is placed in an etching chamber, and oxygen gas and high plasma power are inserted into the etching chamber and oxidizing, resulting in one or more of the filler material lines being oxidized, the filler material line(s) increasing in width from oxidizing, and etching the hard mask layer with a chemistry that is non-selective to the oxidized filler material lines and hard mask layer, and which has a stronger lateral etch selectivity to the oxidized filler material lines than the hard mask layer.

Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

Abstract: Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si—H) surface of the passivation layer into an Arsenic terminated (Si—As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.

Abstract: The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure comprising a second semiconductor material different from the first semiconductor material in the growth channel; forming a semiconductor starting structure for a second semiconductor device from the filling structure; and fabricating a second semiconductor device comprising the starting structure. The invention is notably also directed to corresponding semiconductor circuits.