Patents Issued in February 21, 2019
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Publication number: 20190057817Abstract: An apparatus is disclosed which includes an electrolytic capacitive element with multiple capacitor sections.Type: ApplicationFiled: July 20, 2018Publication date: February 21, 2019Inventor: Robert M. Stockman
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Publication number: 20190057818Abstract: An object of the present disclosure is to suppress deterioration of a single cell in a power supply device that uses a solar cell module including a plurality of single cells so as to extend the performance retention time of the solar cell module.Type: ApplicationFiled: February 22, 2017Publication date: February 21, 2019Inventors: TOMOHISA YOSHIE, ATSUSHI FUKUI
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Publication number: 20190057819Abstract: Method for making composite materials and flexible supercapacitor devices The present invention provides a method (201) for making composite materials used in making flexible supercapacitor prototype (106). The method (201) comprises the steps of rolling the exfoliated graphite (101) using rolling instrument (103) to form an EG sheet (104). In-situ coating is done on EG sheet (104) to form flexible EG or polymer electrode which is used to make supercapacitors (106). A graphite powder (101) is added with the mixture of HNO3 and H2SO4 in the ratio of 1:3 resulting in oxidized graphite. Oxidized graphite undergoes thermal shock in an isothermal furnace at a temperature of 900 degree Celsius for time duration of 2 minutes resulting in EG worms (102). These EG worms are rolled using a rolling instrument (103) to form an EG sheet (104).Type: ApplicationFiled: August 6, 2018Publication date: February 21, 2019Inventor: Venkataramana Gedela
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Publication number: 20190057820Abstract: A rotating handle device formed by the the mounting of an assembly including an attachment base that receives a grip and a sliding button, a sliding limiting drive member, and a fixing cover. The fastening between the sliding button, grip, attachment base, and fixing cover is achieved by pressure fastening engagements snap-fits. The assembly includes a mounting method that prevents removal of the grip from the attachment base unless the sliding button is removed first, and a mounting or dismounting process between the grip and the attachment base that may only take place upon the coincidence between pairs of flaps and passing recessions.Type: ApplicationFiled: August 14, 2018Publication date: February 21, 2019Inventor: João Paulo Abdala
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Publication number: 20190057821Abstract: This invention relates to a switching device (10). More specifically, the invention relates to a retrofit switching device (10) for mechanically switching a plurality of switches between on and/or off conditions. It is envisaged that the primary application of such invention is for switching circuit breakers configured along one or more rows on a distribution board. The switching device (10) includes a pair of primary parallel guide rails (12,14), a means for anchoring the switching device (10) to a switch covering panel (i.e. a distribution board panel) and a carriage (22), supported across the primary parallel guide rails (12,14) and movable back-and- forth therealong along a first axis, the carriage (22) comprising thereon: (i) a switch engaging formation for operably switching the switches between on and off conditions; and (ii) a primary drive (26) for moving the switch engaging formation back-and-forth along a second axis, wherein the first and second axes are transverse one another.Type: ApplicationFiled: November 15, 2016Publication date: February 21, 2019Inventor: Colin Victor Wasserfall
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Publication number: 20190057822Abstract: A system and method for connecting supply power to motor control components includes use of a motor control center subunit with moveable supply power contacts. After a motor control center subunit is secured into a motor control center compartment, the supply power contacts may be advanced to engage supply power buses. For disconnection, the supply power contacts may be retracted and isolated from the buses before physical removal of the subunit.Type: ApplicationFiled: August 22, 2018Publication date: February 21, 2019Inventors: Edgar Yee, Robert A. Morris, Scott E. McPherren, Neal Edward Rowe
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Publication number: 20190057823Abstract: A key switch includes a key top; a pair of links that support the key top such that the key top is capable of being elevated and lowered; and a switch that opens and closes a contact point with respect to an elevating operation of the key top, wherein each of the links includes two arms, a connection portion that connects the two arms, two first shafts respectively formed at outer portions of the two arms, and two second shafts respectively formed at inner portions of the two arms, and wherein the key top includes at least four first support portions each being provided with a first guide groove in which the respective first shaft is slidable, and at least four second support portions each being provided with a second guide groove in which the respective second shaft is slidable.Type: ApplicationFiled: October 23, 2018Publication date: February 21, 2019Inventors: Katsuaki Koshimura, Masahiro Kaneko, Nobuo Yatsu, Miki Kitahara, Kohei Takahashi, Chuqi Liang
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Publication number: 20190057824Abstract: A switch including a blade, an electrical terminal, and a sensor. The blade is pivotable between an open position and a closed position. The electrical terminal is configured to receive the blade when in the closed blade position. The sensor is coupled to the electrical terminal. The sensor is configured to sense a position of the blade and output a signal corresponding to the position.Type: ApplicationFiled: August 20, 2018Publication date: February 21, 2019Inventors: David Rhein, Angelo Rizzo
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Publication number: 20190057825Abstract: Various embodiments may include a voltage switch having two terminals linked by an operating current path comprising a mechanical switch, and having means of generating a counter voltage to the voltage in the operating path. In some embodiments, there are: two terminals linked by an operating current path comprising a mechanical switch; a transformer having a primary side connected in series with the mechanical switch in the operating current path; a voltage source connected to a secondary side of the transformer; and a switch connected in series with the voltage source.Type: ApplicationFiled: February 6, 2017Publication date: February 21, 2019Applicant: Siemens AktiengesellschaftInventor: Jürgen Rupp
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Publication number: 20190057826Abstract: A piezoelectric generator for generating power upon an acceleration and upon a deceleration of a body. The piezoelectric generator including: first and second masses; first and second springs, the first spring being connected to the body at one end and to the first mass at an other end, the second spring being connected to the body at one end and to the second spring at an other end; and a piezoelectric material connected to the first and second masses such that the piezoelectric material generates power when the body is accelerated or decelerated.Type: ApplicationFiled: August 20, 2018Publication date: February 21, 2019Applicant: Omnitek Partners LLCInventors: Jahangir S. Rastegar, Philip C. Kwok
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Publication number: 20190057827Abstract: A method and system for monitoring a state of a relay switch. The method applies a voltage signal to a solenoid of the relay switch for actuation of the relay switch, monitors over time current flowing through the solenoid after application of the voltage signal, and calculates a back-emf voltage impressed on the solenoid based on an inflection in the current occurring as a plunger of the relay switch moves. The system includes a voltage source, at least one solenoid solenoid having a plunger, a switch connected to the plunger, and a controller configured to data log the voltage applied to the solenoid and the current flowing through the solenoid upon application of the voltage.Type: ApplicationFiled: August 17, 2018Publication date: February 21, 2019Inventor: Zafarullah Khan
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Publication number: 20190057828Abstract: A system for sequentially interconnecting battery modules of a battery pack is disclosed. The battery pack may comprise first, second and third battery modules. Each of the first, second and third battery modules includes a first power output terminal and a second power output terminal. Each of the first power output terminals is of a first polarity and the each of the second power output terminals is of a second, opposite polarity. The system comprises a control module for providing a control signal to sequentially interconnect the battery modules, a first interconnect controller electrically disposed between the first and second battery modules, and a second interconnect controller electrically disposed between the second and third battery modules. Each of the first and second interconnect controllers includes a contactor comprising a main contact, an auxiliary contact and an actuating coil for closing the respective main contact and auxiliary contact.Type: ApplicationFiled: August 17, 2018Publication date: February 21, 2019Inventors: David Gurtner, Scott Stewart, Gilbert De Guzman
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Publication number: 20190057829Abstract: Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, comprising an external base forming at least a portion of the enclosure; an internal base within the enclosure; and at least one thermal dissipative strap assembly, comprising: an internal base thermal conductive base in contact with the internal base, an external base thermal conductive base in contact with the external base, and a flexible thermal dissipative strap coupling the internal base thermal conductive base to the external base thermal conductive base.Type: ApplicationFiled: July 3, 2018Publication date: February 21, 2019Applicant: Varex Imaging CorporationInventors: Chris Ferrari, Thomas M. Bemis
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Publication number: 20190057830Abstract: Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, the enclosure including an external base including an opening; an internal base within the enclosure; and an adjustable support assembly adjustably coupling the internal base to the external base and extending through the opening, the adjustable support assembly comprising: a threaded shaft extending along a longitudinal axis and coupled to the internal base; a threaded hole component threadedly engaged with the threaded shaft and coupled to the external base such that the threaded hole component is axially constrained in a direction along the longitudinal axis relative to the external base independent of the threaded shaft; and a flexible component coupled to the external base and the threaded shaft and sealing the opening.Type: ApplicationFiled: June 30, 2018Publication date: February 21, 2019Applicant: Varex Imaging CorporationInventor: Chris Ferrari
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Publication number: 20190057831Abstract: A left-handed material extended interaction klystron includes: an input cavity, a middle cavity, an output cavity, first-section drift tube and a second-section drift tube; wherein the input cavity, the middle cavity and the output cavity are all cylindrical resonant cavities having arrays of Complementary electric Split-Ring Resonator (CeSRR) unit cells provided therein; wherein a first side of the input cavity is an input channel of an electron beam, a second side connects the middle cavity via the first-section drift tube; a first T-shaped coaxial input structure is provided in the input cavity; a first side of the output cavity is for connecting a collector, a second side of the output cavity connects the middle cavity via the second-section drift tube, a second T-shaped coaxial output structure is provided in the output cavity.Type: ApplicationFiled: November 13, 2018Publication date: February 21, 2019Inventors: Zhaoyun Duan, Xin Wang, Xirui Zhan, Fei Wang, Shifeng Li, Zhanliang Wang, Yubin Gong
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Publication number: 20190057832Abstract: An analytical X-ray tube with an anode target material that emits characteristic X-rays in response to excitation by an electron beam may include any of several advantageous features. The target material is deposited on a diamond substrate layer, and a metal carbide intermediate layer may be provided between the target material and substrate that provides enhanced bonding therebetween. An interface layer may also be used that provides an acoustic impedance matching between the target material and the substrate. For a low thermal conductivity target material, a heat dissipation layer of a higher thermal conductivity material may also be included between the target material and substrate to enhance thermal transfer. The target material may have a thickness that corresponds to a maximum penetration depth of the electrons of the electron beam, and the structure may be such that a predetermined temperature range is maintained at the substrate interface.Type: ApplicationFiled: August 17, 2017Publication date: February 21, 2019Inventors: Roger D. DURST, Carsten MICHAELSEN, Paul RADCLIFFE, Jenss SCHMIDT-MAY
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Publication number: 20190057833Abstract: This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.Type: ApplicationFiled: July 23, 2018Publication date: February 21, 2019Inventor: Shuai LI
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Publication number: 20190057834Abstract: An electron reflectometer includes: a sample stage; a source that produces source electrons; a source collimator; and an electron detector that receives collimated reflected electrons.Type: ApplicationFiled: May 15, 2018Publication date: February 21, 2019Inventors: Lawrence H. Friedman, Wen-Li WU
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Publication number: 20190057835Abstract: A system and method for reduced workpiece adhesion during removal from a semiconductor processing station. The system provides an electrostatic charge detector that measures the residual charge on an electrostatically clamped workpiece prior to removal from a processing station inside the semiconductor processing tool. One embodiment uses an algorithm that to predict when to remove the workpiece without electrostatic adhesion based upon the decay rate of the residual electrostatic charge (Q) on the workpiece. Other embodiments also provide for a processing station static charge buildup health check and an excessive static charge check on incoming workpieces.Type: ApplicationFiled: August 7, 2018Publication date: February 21, 2019Inventors: Eric D. Wilson, David E. Suuronen, Michael W. Osborne, Julian G. Blake
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Publication number: 20190057836Abstract: Techniques of using a Transmission Charged Particle Microscope for diffraction pattern detection are disclosed. An example method including irradiating at least a portion of a specimen with a charged particle beam, using an imaging system to collect charged particles that traverse the specimen during said irradiation, and to direct them onto a detector configured to operate in a particle counting mode, using said detector to record a diffraction pattern of said irradiated portion of the specimen, recording said diffraction pattern iteratively in a series of successive detection frames, and during recording of each frame, using a scanning assembly for causing relative motion of said diffraction pattern and said detector, so as to cause each local intensity maximum in said pattern to trace out a locus on said detector.Type: ApplicationFiled: August 16, 2018Publication date: February 21, 2019Inventors: Bart Buijsse, Kuijper Kuijper
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Publication number: 20190057837Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventors: Weiming REN, Shuai Li, Xuedong Liu, Zhongwei Chen
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Publication number: 20190057838Abstract: An e-beam lithography process includes the following steps: implanting into a substrate, or into a dielectric layer deposited on the surface of the substrate, electrons in a first pattern; depositing an e-beam resist on the surface of the substrate or of the sacrificial dielectric layer; and exposing the resist by means of an electron beam in a second pattern, then developing the resist; the first and second patterns being made up of elementary patterns, the elementary patterns of the first pattern at least partially surrounding the elementary patterns of the second pattern.Type: ApplicationFiled: February 20, 2017Publication date: February 21, 2019Inventors: Ludovic LATTARD, Patrick QUEMERE
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Publication number: 20190057839Abstract: Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.Type: ApplicationFiled: October 19, 2018Publication date: February 21, 2019Inventors: Michael C. Kellogg, Alexei Marakhtanov, John Patrick Holland, Zhigang Chen, Felix Kozakevich, Kenneth Lucchesi
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Publication number: 20190057840Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
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Publication number: 20190057841Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
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Publication number: 20190057842Abstract: The invention provides an RF signal transmitting device for plasma processing apparatus. The device includes a metal layer embedded in a plate and a metal rod for transmitting RF signal. The metal rod is provided with an upper end and a lower end. The upper end of the metal rod electrically coupled to the metal layer. A magnetic metal contact is sandwiched between the upper end of the metal rod and the metal layer. The material of metal rod is selected from the group of tungsten and chromium.Type: ApplicationFiled: August 17, 2018Publication date: February 21, 2019Inventor: JUNICHI ARAMI
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Publication number: 20190057843Abstract: An apparatus includes a chamber main body, a microwave output device that generates a microwave having a bandwidth, a wave guide tube that is connected between the microwave output device and the chamber main body, and tuner that is provided in the wave guide tube. The microwave output device generates a microwave of which power is pulse-modulated to have a high level and a low level. The tuner includes a stub configured to be adjusted a protrusion amount with respect to an internal space of the wave guide tube, a tuner wave detection unit that detects a measured value corresponding to power of a microwave in the wave guide tube at a timing based on the pulse frequency and the setting duty ratio, and a tuner control unit that adjusts a protrusion amount of the stub on the basis of the measured value detected by the tuner wave detection unit.Type: ApplicationFiled: August 20, 2018Publication date: February 21, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Kazushi Kaneko, Kazunori Funazaki, Koji Itadani, Kensuke Fukata, Kouki Uchida
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Publication number: 20190057844Abstract: A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.Type: ApplicationFiled: August 20, 2018Publication date: February 21, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Kazushi KANEKO, Yohei ISHIDA
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Publication number: 20190057845Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.Type: ApplicationFiled: August 17, 2018Publication date: February 21, 2019Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
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Publication number: 20190057846Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: October 24, 2018Publication date: February 21, 2019Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Publication number: 20190057847Abstract: A method to detect a potential fault in a plasma system is described. The method includes accessing a model of one or more parts of the plasma system. The method further includes receiving data regarding a supply of RF power to a plasma chamber. The RF power is supplied using a configuration that includes one or more states. The method also includes using the data to produce model data at an output of the model. The method includes examining the model data. The examination is of one or more variables that characterize performance of a plasma process of the plasma system. The method includes identifying the fault for the one or more variables. The method further includes determining that the fault has occurred for a pre-determined period of time such that the fault is identified as an event. The method includes classifying the event.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventors: John C. Valcore, JR., James Hugh Rogers, Nicholas Edward Webb, Peter T. Muraoka
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Publication number: 20190057848Abstract: A magnet bar assembly for a rotary target cathode comprises a support structure, a magnet bar structure movably attached to the support structure and including a plurality of magnets, and a positioning mechanism operatively coupled to the support structure and the magnet bar structure. The positioning mechanism is configured to move the magnet bar structure between a retracted position and a deployed position while inside a magnetic target material cylinder. The retracted position substantially reduces a magnetic force between the magnets and a magnetic target material of a target cylinder when the magnet bar assembly is inserted into the target cylinder or removed from the target cylinder. The deployed position substantially increases the magnetic force between the magnets and the magnetic target material when the magnet bar assembly is in the target cylinder, and allows a magnetic field from the magnet bar structure to penetrate through the magnetic target material.Type: ApplicationFiled: August 16, 2017Publication date: February 21, 2019Inventors: Patrick Lawrence Morse, Daniel Theodore Crowley
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Publication number: 20190057849Abstract: Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.Type: ApplicationFiled: August 18, 2017Publication date: February 21, 2019Inventors: Vibhu Jindal, Sanjay Bhat, Majeed A. Foad
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Publication number: 20190057850Abstract: A magnetron sputtering device in one embodiment of the present disclosure includes a support table supporting thereon a base substrate, and a floating mask arranged at a first side of the support table and substantially parallel to the support table.Type: ApplicationFiled: August 10, 2017Publication date: February 21, 2019Applicants: BOE TECHNOLOGY GROUP CO., LTD., ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.Inventor: Yingnan Kang
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Publication number: 20190057851Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.Type: ApplicationFiled: August 18, 2017Publication date: February 21, 2019Inventors: Sanjay Bhat, Vibhu Jindal, Vishwas Kumar Pandey
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Publication number: 20190057852Abstract: An ion manipulation device comprises a plurality of electrode rings arranged longitudinally adjacent to each other and defining a central axis therethrough. At least one electrode ring comprises a plurality of electrodes arranged in a first planar pattern. Electrodes are configured to periodically receive a voltage to generate a circular traveling wave that rotates around the electrodes of each electrode ring to confine ions within an interior of the apparatus.Type: ApplicationFiled: August 14, 2018Publication date: February 21, 2019Applicant: Battelle Memorial InstituteInventors: Yehia M. Ibrahim, Aneesh Prabhakaran, Sandilya V.B. Garimella, Richard D. Smith, Ailin Li
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Publication number: 20190057853Abstract: An electromagnet assembly suitable for mass spectrometer comprising one yoke; and two pole pieces; the pole pieces being comprised in a vacuum chamber and being separated from each other by a pole piece gap defining a passage for the charged particles to be deflected; the yoke forming a bridge over the two pole pieces thus defining a magnetic circuit. The electromagnet assembly further comprises one electrical circuit for generating a magnetic flux in the magnetic circuit, the electrical circuit being included in the yoke. The electromagnet assembly is remarkable in that the pole pieces are electrically insulated from the electrical circuit and from the yoke by first electrical insulating means and are electrically insulated from the vacuum chamber.Type: ApplicationFiled: February 7, 2017Publication date: February 21, 2019Inventors: Roch Andrzejewski, Rachid Barrahma, David Dowsett, Tom Wirtz
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Publication number: 20190057854Abstract: Disclosed herein are mass spectrometers having segmented electrodes and associated methods. According to an aspect, an apparatus or mass spectrometer includes an ion source configured to generate ions from a sample. The apparatus also includes a detector configured to detect a plurality of mass-to-charge ratios associated with the ions. Further, the apparatus includes segmented electrodes positioned between the ion source and the detector. The apparatus also includes a controller configured to selectively apply a voltage across the segmented electrodes for forming a predetermined electric field profile.Type: ApplicationFiled: October 28, 2016Publication date: February 21, 2019Inventors: Zach Russell, Michael Gehm, Jeffrey T. Glass, Shane Di Dona, Evan Chen, Charles Parker, Jason Amsden, David Brady
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Publication number: 20190057855Abstract: An ion-trap system having a trapping location that is controllable with nanometer-scale precision in three dimensions is disclosed. The ion-trap system includes an ion trap that includes a pair of RF driver electrodes, a pair of tuning electrodes operably coupled with the RF driver electrodes to collectively generate an RF field having an RF null that defines the trapping location, as well as a plurality of DC electrodes that are operably coupled with the RF driver electrodes and the tuning electrodes. Each tuning electrode is driven with an RF signal whose amplitude and phase is independently controllable. By controlling the amplitudes of the RF signals applied to the tuning electrodes, the height of the trapping location above the mirror is controlled. The position of the tuning location along two orthogonal lateral directions is controlled by controlling a plurality of DC voltages applied to the plurality of DC electrode pads.Type: ApplicationFiled: July 17, 2018Publication date: February 21, 2019Inventors: Jungsang KIM, Andre VAN RYNBACH, Peter MAUNZ
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Publication number: 20190057856Abstract: The invention generally relates to ion traps and methods of use thereof. In certain embodiments, the invention provides a system that includes a mass spectrometer including an ion trap, and a central processing unit (CPU). The CPU has storage that is coupled to the CPU for storing instructions that when executed by the CPU cause the system to apply a constant radio frequency (RF) signal to the ion trap, and apply a first alternating current (AC) signal to the ion trap the frequency of which varies as a function of time.Type: ApplicationFiled: October 21, 2016Publication date: February 21, 2019Applicants: Purdue Research Foundation, Purdue Research FoundationInventors: Robert Graham Cooks, Jason Duncan, Joshua Wiley
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Publication number: 20190057857Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventors: Dai Ishikawa, Atsuki Fukazawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun, YongMin Yoo, YoonKi Min, SeYong Kim, JongWan Choi
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Publication number: 20190057858Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.Type: ApplicationFiled: August 18, 2017Publication date: February 21, 2019Inventors: Dennis M. Hausmann, Alexander R. Fox, David Charles Smith, Bart J. van Schravendijk
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Publication number: 20190057859Abstract: In one aspect, the present disclosure relates to a method. The method includes providing a substrate having a patterned layer thereon, the patterned layer including an opening that exposes the substrate. The method also includes selectively infiltrating the patterned layer with a metal or ceramic material, thereby reducing a dimension of the opening. The opening exposes the substrate after the dimension of the opening is reduced.Type: ApplicationFiled: August 14, 2018Publication date: February 21, 2019Applicant: IMEC VZWInventors: Boon Teik Chan, Jean-Francois de Marneffe
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Publication number: 20190057860Abstract: A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes arranging a substrate within a processing chamber of the substrate processing system, depositing an HfO2 layer on the substrate, performing a plasma treatment of the HfO2 layer, and annealing the HfO2 layer to form ferroelectric hafnium HfO2.Type: ApplicationFiled: August 2, 2018Publication date: February 21, 2019Inventors: Hyungsuk Alexander YOON, Zhongwei Zhu, Hwan Sung Choe
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Publication number: 20190057861Abstract: The present disclosure discloses a manufacturing method for a semiconductor apparatus, and relates to the field of semiconductor technologies. Forms of the method include: providing a semiconductor structure, where the semiconductor structure includes: a substrate and an interlayer dielectric layer on the substrate, where the interlayer dielectric layer has an opening for forming a gate; depositing a gate metal layer on the semiconductor structure to fill the opening, where the gate metal layer contains impurity; forming an impurity adsorption layer on the gate metal layer; performing a first annealing treatment on a semiconductor structure on which the impurity adsorption layer has been formed, to make the impurity in the gate metal layer enter the impurity adsorption layer; and removing the impurity adsorption layer after the first annealing treatment is performed.Type: ApplicationFiled: July 25, 2018Publication date: February 21, 2019Applicants: Semiconductor Manufacturing International (Shanghai)) Corporation, Semiconductor Manufacturing International (Beijing) CorporationInventors: Jin E Liang, Le Lv
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Publication number: 20190057862Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.Type: ApplicationFiled: August 6, 2018Publication date: February 21, 2019Inventors: Yang YANG, Eswaranand VENKATASUBRAMANIAN, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
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Publication number: 20190057863Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.Type: ApplicationFiled: August 17, 2018Publication date: February 21, 2019Inventors: YIXIONG YANG, PAUL F. MA, WEI V. TANG, WENYU ZHANG, SHIH CHUNG CHEN, CHEN HAN LIN, CHI-CHOU LIN, YI XU, YU LEI, NAOMI YOSHIDA, LIN DONG, SIDDARTH KRISHNAN
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Publication number: 20190057864Abstract: A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to ultraviolet radiation to resolve defects within the film deposited on the substrate. The ultraviolet radiation can be supplied in-situ using either a second plasma configured to generate ultraviolet radiation or an ultraviolet irradiation device disposed in exposure to the plasma generation region. The ultraviolet radiation can also be supplied ex-situ by moving the substrate to an ultraviolet irradiation device separate from the plasma processing chamber. The substrate can be exposed to the ultraviolet radiation in a repeated manner to resolve defects within the deposited film as the film thickness increases.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventor: Shankar Swaminathan
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Publication number: 20190057865Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 ?m2 or more, and a dislocation density that is less than 5×106cm?2.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Yuichi OSHIMA, Shizuo FUJITA, Kentaro KANEKO, Makoto KASU, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA
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Publication number: 20190057866Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Yuichi OSHIMA, Shizuo FUJITA, Kentaro KANEKO, Makoto KASU, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA