Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a sapphire substrate preparation step S10 for preparing a sapphire substrate having, as a main surface, a {10-10} plane or a plane obtained by inclining the {10-10} plane at a predetermined angle in a predetermined direction; a heat treatment step S20 for performing a heat treatment over the sapphire substrate while performing a nitriding treatment or without performing the nitriding treatment; a buffer layer forming step S30 for forming a buffer layer over the main surface of the sapphire substrate after the heat treatment; and a growth step S40 for forming a group III nitride semiconductor layer, in which a growth surface has a predetermined plane orientation, over the buffer layer, in which at least one of a plane orientation of the main surface of the sapphire substrate, presence or absence of the nitriding treatment during the heat treatment, and a growth temperature in the buffer layer forming step is adjusted such that the

Abstract: In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

Abstract: A method for improving EUV lithographic patterning of SnO2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO2 layer. The modification increases the hydrophobicity of the SnO2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO2 layer via spin coating. The modification of the surface of the SnO2 layer enhances adhesion of contact between the photoresist and the SnO2 layer during and after spin coating.

Abstract: The present method comprises providing a flexible web substrate (e.g., polymeric flexible web substrates) that forms at least part of a component of a device, coating so as to wet-out on and cover all or a substantial portion of a major surface on one side or both sides of the flexible web substrate with flowable polymeric material, while the flexible web substrate is moving in a down-web direction, and solidifying the polymeric material so as to form one cleaning layer on the major surface of one side or both sides of the flexible web substrate. The present invention can be utilized in a continuous in-line manufacturing process. In applications of the present invention where the flexible web substrate will not form a component of a device, the present invention broadly provides a method for cleaning particles from a flexible web of indefinite length.

Abstract: Curable homopolymers formed from monomers having two 2-naphthol moieties are useful as underlayers in semiconductor manufacturing processes.

Abstract: A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited over large substrates. When the precursor gas or gas mixture in the chamber is energized by applying radio frequency (RF) power to the chamber, the RF current flowing through the plasma generates a standing wave effect (SWE) in an inter-electrode gap. SWEs become significant as substrate or electrode size approaches the RF wavelength. Process parameters, such as process power, process pressure, electrode spacing, and gas flow ratios all affect the SWE. These parameters can be altered in order to minimize the SWE problem and to achieve acceptable thickness and properties uniformities. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates, while achieving various plasma densities will act to reduce the SWE, creating greater plasma stability.

Abstract: A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N2) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.

Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

Abstract: Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

Abstract: A method of manufacturing a semiconductor device includes forming a hard mask layer over a substrate and activating a surface of the hard mask layer to form a surface active layer over the hard mask layer. A resist layer is formed over the hard mask layer and a metal-containing layer is selectively formed over the surface active layer in at least one trench defined between portions of the resist layer. The resist layer is removed to define a pattern between portions of the selectively formed metal-containing layer and the hard mask layer is etched in accordance with the pattern. The etched pattern is transferred to at least a portion of the substrate and at least a portion of the hard mask layer, surface active layer, and metal-containing layer are removed.

Abstract: Aspects of the disclosure provide a method. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. Then, the method includes forming a mask layer over the spacer layer. The mask layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. Further, the method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer with a dry etching process using the third layer as an etch mask to form an opening that exposes a portion of the spacer layer. Then, the method includes removing the second layer using a wet etchant before a formation of a backfill material layer in the opening and over the first layer.

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming and patterning a spacer layer for multi-patterning processes. In one embodiment, a method for patterning a spacer layer on a substrate includes forming a protective layer on a spacer layer disposed on a structure disposed on a substrate, wherein the protective layer is formed predominately on a top surface of the spacer layer, than a bottom surface of the spacer layer, etching the spacer layer from the bottom surface, forming a polymer layer on the substrate, etching a top portion of the polymer layer and a first portion the spacer layer located the top surface of the structure, and removing the structure from the substrate and leaving a second portion the spacer layer on the substrate.

Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

Abstract: Embodiments described herein relate generally to methods for forming a mask for patterning a feature in semiconductor processing. In an embodiment, a dielectric layer is formed over a substrate. A mask is formed over the dielectric layer. Forming the mask includes depositing a first layer over the dielectric layer; implanting in a first implant process a dopant species through a patterned material and into the first layer at a first energy; after implanting in the first implant process, implanting in a second implant process the dopant species through the patterned material and into the first layer at a second energy greater than the first energy; and forming mask portions of the mask comprising selectively removing portions of the first layer that are not implanted with the dopant species.

Abstract: An object of the present invention is to provide stable withstand voltage characteristics, reduce turn-off losses along with a reduction in leakage current when the device is off, improve controllability of turn-off operations, and improve blocking capability at turn-off. An N buffer layer includes a first buffer layer joined to an active layer and having one peak in impurity concentration, and a second buffer layer joined to the first buffer layer and an N? drift layer, having at least one peak point in impurity concentration, and having a lower maximum impurity concentration than the first buffer layer. The impurity concentration at the peak point of the first buffer layer is higher than the impurity concentration of the N? drift layer, and the impurity concentration of the second buffer layer is higher than the impurity concentration of the N? drift layer in the entire area of the second buffer layer.

Abstract: A display device manufacturing method and a display device manufacturing apparatus are provided. The method includes steps A to D. The step A includes forming a display device. The step B includes disposing the display device in a sealing chamber. The step C includes adding hydrogen gas into the sealing chamber such that hydrogen atoms in the hydrogen gas spread in an insulating layer. The step D includes heating the hydrogen gas and/or the display device in sealing chamber such that the hydrogen atoms in insulating layer spread in the semiconductor member. The present invention can enhance electrical performance of the semiconductor member.

Abstract: A method for forming a FinFET device structure is provided. The method for foiming a FinFET device structure includes forming a fin structure and a fin isolation structure over a substrate, and forming a metal stack over the fin structure and the fin isolation structure. The method for forming a FinFET device structure also includes partially removing the metal stack so that a top surface of the fin isolation structure is exposed, and forming a dielectric material over the metal stack and covering the top surface of the fin isolation structure. The method for forming a FinFET device structure further includes patterning the dielectric material and the metal stack to form a metal gate structure and an insulating structure over the metal gate structure.

Abstract: Techniques herein include systems and methods for correcting pattern overlay errors by correcting or adjusting bowing of wafers. Location-specific tuning of stress on semiconductor substrates reduces overlay error. Location-specific tuning of stress independently modifies specific regions, areas, or point locations on a substrate to change wafer bow at those specific locations, which reduces overlay error on substrates, which in turn improves overlay of subsequent patterns created on the substrate. Techniques herein include receiving a substrate with some amount of overlay error, measuring bow of the substrate to map z-height deviations across the substrate, generating an overlay correction pattern, and then physically modifying internal stresses on the substrate at specific locations with modifications independent of other coordinate locations. Such modifications can include etching a backside surface of the substrate. One or more processing modules can be used for such processing.

Abstract: In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

Abstract: A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.

Abstract: A method comprises following steps. A first mandrel is formed over a target layer over a substrate, wherein the first mandrel comprises a mandrel island and a first mandrel strip, the mandrel island comprises a first sidewall and a second sidewall perpendicular to the first sidewall, and the first mandrel strip extends from the first sidewall of the mandrel island. A first spacer is formed along the first and second sidewalls of the mandrel island and a sidewall of the first mandrel strip. The first mandrel is removed from the target layer. The target layer is patterned when the first spacer remains over the target layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

Abstract: When a semiconductor element is bonded to a base plate electrode, a cushioning is used for protecting the surface of the semiconductor element. A protrusion having an outwardly cutting shape is formed around an area on the base plate electrode for bonding the semiconductor element to disperse and reduce shear force acting on the cushioning during the bonding, so that no cushioning adheres to the surface of the semiconductor element after bonding.

Abstract: The present application relates to a chip packaging method including: fabricating an insulating band on a scribe line of a wafer, where a front surface of the wafer includes independent chip regions, and between any two adjacent chip regions, a depth of the insulating band is greater than a thickness of the chip region and less than a thickness of the wafer, and a width of the insulating band is less than or equal to a width of the scribe line; fabricating an insulating layer on an upper surface of the wafer; fabricating a plurality of holes on the insulating layer above each of the plurality of chip regions to expose each chip region; depositing a conductive material in the plurality of holes to form a plurality of bonding pads; and thinning a back surface of the wafer to obtain a packaged discrete chip for the each chip region.

Abstract: A semiconductor device is provided. The semiconductor device includes a base substrate, a die stacking unit, a number of dummy micro bumps, and an underfill material. The die stacking unit, which is mounted on the base substrate, includes a first die, a second die, and a number of first conductive joints. The first die and the second die are stacked on each other, and the first conductive joints are disposed between and connected to the first die and the second die. The dummy micro bumps, which are disposed between the first conductive joints, are connected to the first die but not to the second die. The underfill material is filled into a number of gaps between the base substrate, the first die, the second die, the first conductive joints, and the dummy micro bumps.

Abstract: A method and a system for thinning a substrate are provided. The method includes at least the following steps. A liquid seal is provided at an interface between a chuck and a substrate disposed on the chuck. The substrate is thinned during the liquid seal is provided.

Abstract: In an embodiment, a system includes: a pedestal configured to secure a wafer; a nozzle configured to deposit a cleaning solution on the wafer disposed on the pedestal during a cleaning session; and a plurality of contacts configured to secure the wafer to the pedestal while the cleaning solution is deposited on the wafer, wherein a first subset of the plurality of contacts is configured to contact the wafer at a first time interval and a second subset of the plurality of contacts is configured to contact the wafer at a second time interval.

Abstract: In an embodiment, a method includes: spinning a wafer around an axis of rotation at a center of the wafer; applying a first stream of liquid along a line starting from an initial point on the wafer adjacent to the center of the wafer, through the center of the wafer, and ending at an edge of the wafer; applying a second stream of liquid to an inner third of the line starting at the initial point and ending at a boundary point; applying a third stream of liquid to a middle third of the line starting at the boundary point; applying a fourth stream of liquid to an outer third of the line ending at the edge of the wafer; applying a fifth stream of liquid along the line starting from the initial point and ending at the edge of the wafer; and applying a stream of gas along the line starting from the initial point and ending at the edge of the wafer.

Abstract: A gas etching device includes an upper cover having a first gas exhausting channel that surrounds a first accommodation space. A lower cover has a second accommodation space where a wafer is located. The lower cover can connect with the upper cover. A gas jetting element is arranged in the first accommodation space to communicate with the upper cover. The gas jetting element receives etching gas from outside the upper cover and jets the etching gas in the first accommodation space and the second accommodation space to react with the wafer. The reacted etching gas is exhausted through the first gas exhausting channel. The first gas entering channel continues receives high-pressure gas from outside the upper cover and transmits the high-pressure gas to the second gas entering channel, so as to avoid leaking the etching gas.

Abstract: A cutting apparatus includes a processing feed direction determining mechanism. The processing feed direction determining mechanism includes an imaging unit 28 that images a region including a cut groove and a recording unit that records chipping data of the imaged cut groove. The recording unit records first chipping data of a cut groove formed by cutting a workpiece from a first direction, second chipping data of a cut groove formed by cutting the workpiece from a direction opposite from the first direction, third chipping data of a cut groove formed by cutting the workpiece from a second direction orthogonal to the first direction, and fourth chipping data of a cut groove formed by cutting the workpiece from a direction opposite from the second direction.

Abstract: A package substrate processing method for processing a package substrate having a division line, an electrode being formed on the division line includes a cutting step of cutting the package substrate along the division line by using a cutting blade and a burr removing step of removing burrs produced from the electrode in the cutting step by spraying a fluid to the package substrate along the division line after performing the cutting step. The cutting step includes a step of supplying a cutting liquid containing an organic acid and an oxidizing agent to a cutting area where the package substrate is to be cut by the cutting blade.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.

Abstract: A flip-chip bonding apparatus (100) is provided with: a bonding tool (10) that includes a base (11), and an island (13) that vacuum-sucks, to a surface (14) thereof, a semiconductor die (70) having protruding electrodes (72, 73) that are disposed on both the surfaces; and a heater (20) that heats the semiconductor die (70) vacuum-sucked to the island (13). The flip-chip bonding apparatus heats the semiconductor die (70), bonds the protruding electrodes (73) of the semiconductor die (70) to protruding electrodes (82) of a semiconductor die (80), and seals, using a non-conductive film (NCF) (75), a gap between the semiconductor die (70) and the semiconductor die (80). Continuous vacuum suction holes (15) are provided in the base (11), said continuously vacuum suction holes being at positions adjacent to the outer peripheral surface of the island (13).

Abstract: The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system includes a processing module and a transfer module. The processing module includes a processing chamber that is configured to process a semiconductor wafer and a gate valve that is configured to provide access to the processing chamber. The transfer module includes a transfer chamber that is coupled to the processing chamber and a liner that is coupled to an inner surface of the transfer chamber. The liner is configured to reduce a volume of the transfer chamber prior to or during a transfer chamber pressure adjustment operation of the transfer module.

Abstract: In an embodiment, a system includes: a chuck; multiple groove conduits arranged around a circumference of a wafer position on the chuck; a gas source in fluid communication with the multiple groove conduits; and a flow monitor configured to determine an amount of gas flow from the gas source to an individual one of the multiple groove conduits.

Abstract: A substrate storage apparatus includes a stage on which a cassette that has a lid detachably mounted to an opening is disposed, a lid attaching/detaching plate that performs attaching/detaching of the lid to/from the opening of the cassette disposed on the stage, and is provided to be movable between a mounting position in contact with the lid disposed at a position of the opening and a retracted position not in contact with the lid disposed at the position of the opening, a lid holding sensor that detects whether the lid is being held by the lid attaching/detaching plate, and a controller that determines presence/absence of abnormality related to attachment/detachment of the lid based on a detection result of the lid holding sensor.

Abstract: A humidity-controlled storage device includes a plurality of panels configured to form an enclosed volume. A first panel of the plurality of panels includes inlet and outlet ports. The storage device further includes a purge system with a gas inlet pipe, a gas supply system, and a gas extraction system. The gas inlet pipe includes a nozzle and a cylindrical portion coupled to the inlet port. The gas supply system is configured to supply a purge gas to the gas inlet pipe. The gas inlet pipe is configured to output the purge gas into the enclosed volume in a direction that creates a circular or an oval gas flow pattern within the enclosed volume. The gas extraction system is coupled to the outlet port and is configured to extract the purge gas from the enclosed volume.

Abstract: A method for transferring massive Micro-LED includes: providing a transfer plate including a base substrate, an insulation film on the base substrate and provided with recesses, and first metal bonding pads in the recesses; providing Micro-LED grains each provided with a second bonding metal at a backside of the Micro-LED gain; forming solder on the first metal bonding pad or the second metal bonding pad; placing the transfer plate and the Micro-LED gains into a chamber which contains solvent and has a temperature higher than a melting point of the solder, vibrating the chamber to enable the Micro-LED gains to fall into the recesses, thereby enabling the second metal bonding pads of the Micro-LED gains fallen in the recesses to be in contact with the first metal bonding pads in the recesses through the solder; and cooling down the transfer plate, thereby solidifying the solder and forming a Micro-LED substrate.

Abstract: Apparatus and methods for handling die carriers are disclosed. In one example, a disclosed apparatus includes: a load port configured to load a die carrier operable to hold a plurality of dies into a processing tool; and a lane changer coupled to the load port and configured to move at least one die in the die carrier to an input of the processing tool and transfer the at least one die into the processing tool for processing the at least one die.

Abstract: A wafer carrier handling apparatus includes a housing, a platform, a moving mechanism and a door storage device. The platform is configured to hold a wafer carrier. The moving mechanism is connected to the housing and configured to move the platform with respect to the housing. The door storage device is disposed above the housing. The door storage device has a first door storage zone. The first door storage zone is configured to allow a door of the wafer carrier to be held thereon.

Abstract: A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Abstract: A wafer uniting method includes a thermocompression bonding step of causing a thermocompression bonding sheet having a size comparable to or greater than a size and a shape of a wafer and a front surface of the wafer to face each other, and pressing them against each other while applying heat to thermocompression bond the thermocompression bonding sheet to the front surface of the wafer. The thermocompression bonding sheet thermocompression bonded to the wafer in the thermocompression bonding step includes at least a first thermocompression bonding sheet and a second thermocompression bonding sheet.

Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.

Abstract: Embodiments described herein relate to coating materials with high resistivity for use in processing chambers. To counteract the high charges near the top surface of the thermal conductive support, the top surface of the thermal conductive support can be coated with a high resistivity layer. The high resistivity of the layer reduces the amount of charge at the top surface of the thermally conductive element, greatly reducing or preventing arcing incidents along with reducing electrostatic chucking degradation. The high resistivity layer can also be applied to other chamber components. Embodiments described herein also relate to methods for fabricating a chamber component for use in a processing environment. The component can be fabricated by forming a body of a chamber component, optionally ex-situ seasoning the body, installing the chamber component into a processing chamber, in-situ seasoning the chamber component, and performing a deposition process in the processing chamber.