Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, two contact elements on a back side of the semiconductor layer sequence, a radiolucent cooling element on a front side of the semiconductor layer sequence opposite the back side, and a siloxane-containing converter layer between the cooling element and the semiconductor layer sequence, wherein the contact elements are configured for electrical contacting of the semiconductor chip and are exposed in the unmounted state of the semiconductor chip, the cooling element is different from a growth substrate of the semiconductor layer sequence, and the cooling element has a thermal conductivity of at least 0.7 W/(m·K).

Abstract: A thermoelectric material includes a polymer matrix and a plurality of partially coated particles dispersed within the polymer matrix. Each particle of the plurality has a discontinuous coating of metal on a carbon-based material. A method includes dispersing functionalized particles comprising a carbon-based material in a solvent; providing a metal salt in the solvent; and forming a plurality of distinct metal volumes on a surface of the functionalized particles to form partially coated particles. The distinct metal volumes are thermally insulated from other volumes of the plurality. A composition of matter includes a discontinuous coating of metal on a surface of a carbon-based material. The carbon-based material is selected from the group consisting of graphene oxide and functionalized carbon nanotubes.

Abstract: There are provided a method for manufacturing a substrate excellent in heat dissipation with a small loss in radio frequencies with no need of a high temperature process in which a metal impurity is diffused, and a substrate of high thermal conductivity. A composite substrate according to the present invention is a composite substrate having a piezoelectric single crystal substrate, a support substrate, and an intermediate layer provided between the piezoelectric single crystal substrate and the support substrate. The intermediate layer is a film formed of an inorganic material, and at least a part of the film is thermally synthesized silica. The intermediate layer may be separated into at least two layers along the bonding surface of the composite substrate. The first intermediate layer in contact with the support substrate may be a layer including thermally synthesized silica.

Abstract: A vibrator device including a vibrator element, an IC substrate including a semiconductor substrate configured of a semiconductor having a first conductive type and a circuit electrically coupled to the vibrator element, the first conductive type being any one of an N-type and a P-type, and a lid directly bonded to the semiconductor substrate and configured of a semiconductor having the first conductive type.

Abstract: Provided is a piezoelectric substrate, containing an elongate piezoelectric body that is helically wound, in which the piezoelectric body includes an optically active polypeptide, a length direction of the piezoelectric body and a main orientation direction of the optically active polypeptide included in the piezoelectric body are substantially parallel to each other, and the piezoelectric body has a degree of orientation F of from 0.50 to less than 1.00, as determined from X-ray diffraction measurement by the following Formula (a): Degree of orientation F=(180°??)/180°??(a) in Formula (a), ? represents a half width (°) of a peak derived from orientation.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has higher magnetic damping (greater than 0.01) as compared with the first magnetic free layer. Such a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the magnetic free layers. The higher magnetic damping value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the magnetic free layers and thus reduces, and even eliminates, write errors.

Abstract: Disclosed is a magnetic tunnel junction device whose fixed layer has a simplified structure and in which the number of stacked layers is reduced. The magnetic tunnel junction device comprises a free layer whose magnetization direction is variable, a fixed layer whose magnetization direction is fixed and that is formed as a single layer, and a dielectric layer stacked between the free layer and the fixed layer. One or more of the free layer and the fixed layer are an L11 type magnetic alloy layer, and the dielectric layer has a (111) texture.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.

Abstract: A reduced parasitic capacitance radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM. A PCM contact connects a PCM routing interconnect with a passive segment of the PCM, wherein the passive segment extends outward and is transverse to the heating element. A heating element contact connects a heating element routing interconnect with a terminal segment of the heating element. The heating element contact is situated cross-wise to the PCM contact. The heating element routing interconnect is situated at a different interlayer metal level relative to the PCM routing interconnect so as to achieve the reduced parasitic capacitance. The heating element routing interconnect can be situated above the heating element. Alternatively, the heating element routing interconnect can be situated below the heating element.

Abstract: A radio frequency (RF) switch includes a heating element, an aluminum nitride layer situated over the heating element, and a phase-change material (PCM) situated over the aluminum nitride layer. An inside segment of the heating element underlies an active segment of the PCM, and an intermediate segment of the heating element is situated between a terminal segment of the heating element and the inside segment of the heating element. The aluminum nitride layer situated over the inside segment of the heating element provides thermal conductivity and electrical insulation between the heating element and he active segment of the PCM. The aluminum nitride layer extends into the intermediate segment of the heating element and provides chemical protection to the intermediate segment of the heating element, such that the intermediate segment of the heating element remains substantially unetched and with substantially same thickness as the inside segment.

Abstract: A circuit according to the present application includes a diode or other non-linear device coupled to a heating element of a phase-change material (PCM) radio frequency (RF) switch. The diode or other non-linear device allows an amorphizing pulse or a crystallizing pulse to pass to a first terminal of the heating element. The diode or other non-linear device substantially prevents a pulse generator providing the amorphizing pulse or crystallizing pulse from interfering with RF signals at RF terminals of the PCM RF switch. In an array of PCM cells each including a diode or other non-linear device, the diode or other non-linear device substantially prevents sneak paths that would otherwise enable an amorphizing or crystallizing pulse intended for a heating element of a selected cell of the array to be provided to heating elements of unselected cells of the array.

Abstract: A semiconductor device includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. An integrated passive device (IPD) is disposed in an interlayer dielectric above the PCM RF switch, and is a metal resistor, a metal-oxide-metal (MOM) capacitor, and/or and inductor. In another approach, the PCM RF switch is disposed in an interlayer dielectric above the IPD, and the IPD is a poly resistor and/or a capacitor.

Abstract: An IC (“integrated circuit”) chip includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. An active device is situated in the substrate. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. In another approach, the PCM RF switch is situated in or above a first metallization level, and a dedicated heat spreader is situated under the PCM RF switch. Alternatively, a PCM RF switch is situated in a flip chip, an active device is situated in the IC chip, and the flip chip is situated over the IC chip forming a composite device.

Abstract: A radio frequency (RF) switch includes a heating element, an aluminum nitride layer situated over the heating element, and a phase-change material (PCM) situated over the aluminum nitride layer. An inside segment of the heating element underlies an active segment of the PCM, and an intermediate segment of the heating element is situated between a terminal segment of the heating element and the inside segment of the heating element. The aluminum nitride layer situated over the inside segment of the heating element provides thermal conductivity and electrical insulation between the heating element and the active segment of the PCM. The aluminum, nitride layer extends into the intermediate segment of the heating element and provides chemical protection to the intermediate segment of the heating element, such that the intermediate segment of the heating element remains substantially unetched and with substantially same thickness as the inside segment.

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

Abstract: In fabricating a radio frequency (RF) switch, a heat spreader is provided and a heating element is deposited. A thermally conductive and electrically insulating material is deposited over the heating element. The heating element and the thermally conductive and electrically insulating material are patterned, where the thermally conductive and electrically insulating material is self-aligned with the heating element. A layer of an upper dielectric is deposited. A conformability support layer is optionally deposited over the upper dielectric and the thermally conductive and electrically insulating material. A phase-change material is deposited over the optional conformability support layer and the underlying upper dielectric and the thermally conductive and electrically insulating material.

Abstract: A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.

Abstract: The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) device. The RRAM device includes a bottom electrode that is disposed over a lower interconnect layer surrounded by a lower inter-level dielectric (ILD) layer. A data storage structure is arranged over the bottom electrode and a multi-layer top electrode is disposed over the data storage structure. The multi-layer top electrode includes conductive top electrode layers separated by an oxygen barrier structure that is configured to mitigate movement of oxygen between the conductive top electrode layers. A sidewall spacer is disposed directly over the bottom electrode and has a sidewall that covers outermost sidewalls of the conductive top electrode layers and the oxygen barrier structure.

Abstract: A resistive memory device includes a first electrode, a resistance switching layer and a second electrode. The resistance switching layer is disposed on the first electrode and includes a ternary transition metal oxide. The second electrode is disposed on the resistance switching layer.

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

Abstract: A significantly reduced parasitic capacitance phase-change maternal (PCM) radio frequency (RF) switch includes an RF clearance zone including a step-wise structure of intermediate interconnect segments and vias to connect PCM contacts to setback top routing interconnects. The said RF clearance zone does not include cross-over interconnect segments. A low-k dielectric is situated in the RF clearance zone. A closed-air gap is situated in the RF clearance zone within the low-k dielectric. The setback top routing interconnects are situated higher over a substrate than the PCM contacts and the intermediate interconnect segments. The PCM RF switch may further include an open-air gap situated between the setback top routing interconnects.

Abstract: A radio frequency (RF) switch includes a heating element, a phase-change material (PCM) situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM. The heating element can have a heater line underlying an active segment of the PCM. Alternatively, the heating element can have a split heater lines underlying an active segment of the PCM. The split heater lines increase an area of the active segment of the PCM and reduce a heater-to-PCM parasitic capacitance. A fan-out structure having fan-out metal can connect the heater line to a heater contact. The fan-out structure reduces heat generation outside the active segment of the PCM and reduces a heater contact-to-PCM parasitic capacitance. The fan-out structure can have dielectric segments interspersed between the fan-out metal to reduce dishing.

Abstract: A radio frequency (RF) switch includes a heating element and a thermally resistive material adjacent to sides of the heating element. A thermally conductive and electrically insulating material is situated on top of the heating element. A phase-change material (PCM) is situated over the thermally conductive and electrically insulating material. The PCM has an active segment overlying the thermally conductive and electrically insulating material, and passive segments underlying input/output contacts of the RF switch. The RF switch may include a bulk substrate heat spreader, a silicon-on-insulator (SOI) handle wafer heat spreader, or an SOI top semiconductor heat spreader under the heating element.

Abstract: A semiconductor chip or system, such as a multi-chip module (MCM), a system-in-package (SiP), and/or a printed circuit board (PCB) module, includes a substrate, a resonator and/or a micro-electrical-mechanical system (MEMS), and a phase-change material (PCM) switch. The PCM switch includes a heating element, a PCM situated over the heating element, and PCM contacts connected to passive segments of the PCM. The heating element is transverse to the PCM and approximately defines an active segment of the PCM. The PCM contacts are electrically connected to the resonator and/or the MEMS in a shared routing region of the semiconductor chip. The PCM switch is configured to engage or disengage the resonator and/or the MEMS. In one approach, a plurality of PCM switches are capable of reconfiguring an array of resonators and/or an array of MEMS. In another approach, a redundant PCM switch is electrically connected to a redundant resonator and/or a redundant MEMS.

Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.

Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.

Abstract: A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected heating element in a selected PCM RF switch. The ASIC is also configured to generate data for determining and characterizing resistivity change of the selected heating element in the selected PCM RF switch after the ASIC performs a plurality of OFF/ON cycles. In one implementation, a testing method using the ASIC is disclosed.

Abstract: A radio frequency (RF) switch includes a heating element, a nugget, a phase-change material (PCM), and input/output contacts. The nugget comprises thermally conductive and electrically insulating material, and is situated on top of the heating element. The PCM has an active segment approximately situated over the nugget, and passive segments approximately situated under the input/output contacts. The PCM RF switch may include thermally resistive material adjacent to first and second sides of the heating element, and/or adjacent to first and second sides of the nugget.

Abstract: A chalcogenide material and an electronic device are provided. The chalcogenide material may include 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic and 40-50 at % of selenium. The electronic device may include a semiconductor memory device, the semiconductor memory device including a first memory cell that includes a first switching element. The first switching element may include a chalcogenide material including 0.1-5 atomic percent (at %) of silicon, 15-22 at % of germanium, 30-35 at % of arsenic, and 40-50 at % of selenium.

Abstract: A chalcogenide material and an electronic device are provided. The chalcogenide material may include 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may include a switching element including a chalcogenide material, the chalcogenide material including 1-10 atomic percent (at %) of silicon, 10-20 at % of germanium, 25-35 at % of arsenic, 40-50 at % of selenium, and 1-10 at % of tellurium. The electronic device may further include a first electrode electrically coupled to the switching element and a second electrode electrically coupled to the switching element.

Abstract: In manufacturing a radio frequency (RF) switch, a heat spreader is provided. A first dielectric is deposited over the heat spreader. A trench is etched in the first dielectric. A heating element is deposited in the trench and over at least a portion of the first dielectric. A thermally conductive and electrically insulating material is deposited over at least the heating element, where the thermally conductive and electrically insulating material is self-aligned with the heating element. A conformability support layer is optionally deposited over the thermally conductive and electrically insulating material and the first dielectric. A phase-change material is deposited over the optional conformability support layer and the underlying thermally conductive and electrically insulating material and the first dielectric.

Abstract: A compound represented by the following formula (1) is an excellent near-infrared emitter. R1 to R6 are H or a substituent and R7 is represented by the following formula (2). Ar11 is an aryl group, R11 is a substituent other than an aryl group and n11 is 1 or more.

Abstract: Disclosed is an organic electroluminescence device. The device includes an anode; a cathode; and a first light-emission layer disposed between the anode and the cathode and configured for emitting blue light. The first light-emission layer comprises a host composition and a blue dopant. The blue dopant includes at least one compound represented by Chemical Formula D. The host composition contains a first host compound and a second host compound. The first host compound has a triplet energy level higher than a triplet energy level of the blue dopant, while the second host compound has a triplet energy level lower than the triplet energy level of the blue dopant. In Chemical Formula D, each of Ra, Rb, Rc, Rd and Re independently is the same as defined in the present specification.

Abstract: The present disclosure provides a method for manufacturing a light emitting device. The method includes providing a substrate, and forming a photosensitive layer over the substrate. The method also includes patterning the photosensitive layer to form a first recess and a first bump. The method also includes disposing a first organic layer in the first recess. The method also includes patterning the photosensitive layer to form a second recess and a second bump. The method also includes disposing a second organic layer in the second recess.

Abstract: Disclosed is an organic light emitting diode (OLED) display comprising a substrate; an organic light emitting element disposed on the substrate; an encapsulation substrate disposed on the organic light emitting element; and an adhesive layer formed on the substrate, covering the organic light emitting element, and bonding the substrate on which the organic light emitting element is formed with the encapsulation substrate.

Abstract: Provided is an organic light emitting device.

Abstract: According to one or more embodiments, an organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer may include a first compound represented by one selected from Formulae 1-1 and 1-2, and a second compound represented by Formula 2:

Abstract: The present invention provides an indenocarbazole compound characterized by having hole transporting properties, being used as a constituent material of an organic electroluminescence device, and being represented by the following general formula (1), and an organic electroluminescence device having a pair of electrodes and at least one organic layer sandwiched therebetween is characterized in that the indenocarbazole compound is used as a constituent material of at least one organic layer. The indenocarbazole compound according to the present invention has (1) excellent hole transporting properties, (2) excellent electron blocking properties, (3) a stable thin film state, and excellent heat resistance. The organic electroluminescence device according to the present invention has a high light-emitting efficiency and high brightness.

Abstract: The present invention relates to a compound of an acridine derivate as well as of an organic semiconductor material an organic semiconductor layer, an electronic device comprising the acridine derivative, a device comprising an organic light-emitting diode comprising the acridine derivative, a display device thereof and a method of manufacturing the same. (I) wherein L is selected from phenylene, naphthylene and biphenylene; R1, R2, R3, R4 and R5 are independently selected from unsubstituted or substituted C6 to C18 aryl and unsubstituted or substituted pyridyl; and the substituents are selected from deuterium, C1 to C12 alkyl and C1 to C12 alkoxy; a, b, c, d and e are independently selected from 0 or 1 and 2?a+b+c+d+e?5.

Abstract: A compound of formula (I), a material for an organic electroluminescence device comprising at least one compound of formula (I); an organic electroluminescence device which comprises an organic thin film layer between a cathode and an anode, wherein the organic thin film layer comprises one or more layers and comprises a light emitting layer, and at least one layer of the organic thin film layer comprises at least one compound of formula (I); an electronic equipment comprising the organic electroluminescence device; and a process for preparing the compound of formula (I).

Abstract: The present disclosure relates to an organic electroluminescent device comprising a light-emitting layer and a hole transport zone. By comprising the combination of the light-emitting layer and the hole transport zone having a certain HOMO energy value according to the present disclosure, an organic electroluminescent device of excellent luminous efficiency while maintaining excellent lifespan or driving voltage characteristic of the device can be provided.

Abstract: An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which the organic layer includes a compound represented by the following general formula, has high luminous efficiency, excellent blue color purity, and a small change in the chromaticity due to deterioration by driving (Cy represents a fused aromatic ring structure having the number of constituent rings of 3 or more, and has Dn1 and Ac1 as different constituent rings, and each of the constituent rings are all hydrocarbon rings. Dn1 represents NR11, an O atom, or an S atom. Ac1 represents an electron absorbing substituent, an aryl group having an electron absorbing substituent, or an electron deficient heteroaryl group. The ring Z1 represents an arylene group or a heteroarylene group. L1, L2 and L3 represent specific linking groups.

Abstract: Provided is a quantum dot light-emitting device and a display apparatus including the same. The quantum dot light-emitting device comprises: an anode; a cathode; a hole transport layer disposed between the anode and the cathode; a light-emitting layer disposed between the hole transport layer and the cathode, the light-emitting layer including a quantum dot having a core-shell structure; and a buffer layer disposed between the hole transport layer and the light-emitting layer, wherein the buffer layer contains an organic compound or derivatives thereof. The external quantum efficiency and device stability are improved. an aromatic hydrocarbon compound or derivatives thereof having a functional group selected from the group consisting of a hydroxyl group (—OH), a carboxyl group (—COOH), an amino group (—NR, —NH, —NH2, where R is a C1 to C6 monovalent hydrocarbon group or derivatives thereof) and a thiol group (—SH).

Abstract: The present disclosure relates to a compound represented by Formula 1 and an organic light emitting device using the same. The compound used as a material of an organic material layer of the organic light emitting device provides improved efficiency, low driving voltage, and improved lifetime characteristic.

Abstract: A method for preparing a flexible OLED display panel and the motherboard structure thereof are provided. The method includes disposing a first protective film on a second surface of the support substrate. A projection of the first protective film on the flexible OLED motherboard covers each of the flexible OLED display panels so that the support substrate can be prevented from being scratched during the substrate transfer process. In addition, it is unnecessary to grind and clean the support substrate in the laser lift-off process, thereby optimizing the production process, improving the production efficiency and reducing the production cost.

Abstract: A flexible display panel and a manufacturing method which is capable of removing a non-display area without damaging a display element layer, the flexible display panel includes a flexible substrate which includes a display area and a peripheral area outside of the display area, a display element layer disposed on the flexible substrate, and a neutral plane balancing layer disposed on the display element layer in the peripheral area, wherein the peripheral area of the flexible substrate in which the neutral plane balancing layer is disposed is folded towards a rear side of the display area along a first bending line, and the neutral plane balancing layer overlaps the first bending line.

Abstract: A display device includes a first substrate 11, a second substrate 12, and a plurality of light emitting elements 10. Light is emitted via the second substrate 12. Each of the light emitting elements 10 is formed by laminating, from a side of the first substrate, a first electrode 51, an organic layer 70 having a light emitting layer, a second electrode 52, and a sealing layer 15. A light diffusion layer 80 containing fine particles 81 is formed between the sealing layer 15 and the second substrate 12. Orthographic images of the fine particles 81 in the light diffusion layer 80 do not overlap each other on the second substrate 12. Alternatively, the light diffusion layer is formed between the sealing layer and the second substrate, and the light diffusion layer includes a flat portion and a plurality of protruding portions each constituted by a part of a spherical surface protruding from the flat portion.

Abstract: A quantum dot light-emitting diode and a preparation method therefor, and a light-emitting module and a display apparatus. The quantum dot light-emitting diode successively comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.