Abstract: A method of fabricating a semiconductor device includes forming a dummy gate structure on a substrate, forming gate spacers on sidewalls of the dummy gate structure, and depositing an interlayer dielectric layer around the gate spacers. The method also includes removing the dummy gate structure to form a space between the gate spacers, and forming a gate structure in the space, wherein the gate structure includes a gate dielectric layer and a gate electrode layer over the gate dielectric layer. The method further includes removing a portion of the gate electrode layer to form a recess that is surrounded by the gate dielectric layer. In addition, the method includes implanting on the interlayer dielectric layer to form a strained layer for bending the gate dielectric layer and the gate spacers towards the recess.

Abstract: A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device comprises a gate stack on a substrate. The gate stack is comprised of a gate electrode above a gate dielectric layer and is above a channel region in the substrate. The semiconductor device also comprises a pair of source/drain regions in the substrate on either side of the channel region. The pair of source/drain regions is in direct contact with the gate dielectric layer and the lattice constant of the pair of source/drain regions is different than the lattice constant of the channel region. In one embodiment, the semiconductor device is formed by using a dielectric gate stack placeholder.

Abstract: Cell circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation and related methods are disclosed. In one aspect, a cell circuit includes a substrate of semiconductor material and a semiconductor channel structure(s) of a second semiconductor material disposed on the substrate. The semiconductor material applies a stress to the formed semiconductor channel structure(s) to induce a strain in the semiconductor channel structure(s) for increasing carrier mobility. A diffusion break comprising a dielectric material extends through a surrounding structure of an interlayer dielectric, and the semiconductor channel structure(s) and at least a portion of the substrate. The relaxation of strain in areas of the semiconductor channel structure(s) adjacent to the diffusion break is reduced or avoided, because the semiconductor channel structure(s) is constrained by the surrounding structure.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes forming a gate structure over the substrate. The gate structure has a first sidewall. The method includes forming a spacer element over the first sidewall of the gate structure. The method includes forming a source/drain portion adjacent to the spacer element and the gate structure. The source/drain portion has a first top surface. The method includes depositing an etch stop layer over the first top surface of the source/drain portion. The etch stop layer is made of nitride. The method includes forming a dielectric layer over the etch stop layer. The dielectric layer has a second sidewall and a bottom surface, the etch stop layer is in direct contact with the bottom surface, and the spacer element is in direct contact with the second sidewall.

Abstract: A method for forming a FinFET device structure is provided. The method includes forming a fin structure over a substrate and forming a gate dielectric layer over the fin structure. The method also includes forming a gate electrode layer over the gate dielectric layer and forming a source/drain (S/D) structure adjacent to the gate electrode layer. In addition, the method includes forming an S/D contact structure over the S/D structure. The method also includes forming a first conductive layer in direct with the gate electrode layer. A bottom surface of the first conductive layer is lower than a top surface of the gate dielectric layer. The method further includes forming a second conductive layer over the first conductive layer. The gate electrode layer is electrically connected to the second conductive layer by the first conductive layer.

Abstract: An anti-ferromagnetic (AFM) voltage-controlled field effect logic device structure can include an AFM material that extends in a first direction and an input voltage terminal that extends opposite the AFM material. An oxide material can be located between the AFM material and the input voltage terminal. A first spin orbital coupling (SOC) material can extend in a second direction across the AFM material to provide a first SOC channel with a drain voltage terminal at a first end of the first SOC channel and an output voltage terminal at a second end of the first SOC channel that is opposite the first end. A contact can be electrically coupled to the output voltage terminal and configured to electrically couple to a second SOC material extending in the second direction spaced apart from the first SOC material to provide a second SOC channel.

Abstract: This application discloses a display panel and a display device. The display panel includes a substrate, an active switch array and a color filter layer, where the color filter layer is formed on the active switch array, the active switch array includes a metal layer, the metal layer is arranged on the substrate, the substrate is provided thereon with at least two protective layers, the protective layers are covered on the metal layer, the metal layer is separated from the color filter layer by the protective layers.

Abstract: Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

Abstract: Disclosed herein are vertical transistor devices and techniques. In some embodiments, a device may include: a semiconductor substrate; a first transistor in a first layer on the semiconductor substrate; and a second transistor in a second layer, wherein the second transistor includes a first source/drain (S/D) contact and a second S/D contact, the first layer is between the second layer and the semiconductor substrate, and the first S/D contact is between the second S/D contact and the first layer. In some embodiments, a device may include: a semiconductor substrate; and a transistor above the semiconductor substrate, wherein the transistor includes a channel and a source/drain (S/D) contact between the channel and the semiconductor substrate.

Abstract: A semiconductor device includes a stack of layers stacked vertically and including a source layer, a drain layer and a channel layer between the source layer and the drain layer. A gate electrode is formed in a common plane with the channel layer and a gate dielectric is formed vertically between the gate electrode and the channel layer. A first contact contacts the stack of layers on a first side of the stack of layers, and a second contact formed on an opposite side vertically from the first contact.

Abstract: A semiconductor structure and a method for forming same are provided.

Abstract: A technique relates to a semiconductor device. A first stack includes a first plurality of nanowires respectively coupled to first source and drain regions, and a second stack includes a second plurality of nanowires respectively coupled to second source and drain regions. First source and drain contacts couple to a first predefined number of the first plurality of nanowires. Second source and drain contacts to couple to a second predefined number of the second plurality of nanowires, wherein the first predefined number is different from the second predefined number.

Abstract: A magnetoresistance effect device includes a magnetoresistance effect element, and an external magnetic field application unit for applying an external magnetic field to the magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The external magnetic field application unit includes a magnetization retention section and a magnetization setting section. The magnetization setting section has a function of setting a magnetization to be used to generate the external magnetic field into the magnetization retention section by applying a magnetization-setting magnetic field to the magnetization retention section and then stopping the application of the magnetization-setting magnetic field. The magnetization retention section has a function of retaining the set magnetization after the application of the magnetization-setting magnetic field is stopped.

Abstract: A semiconductor device includes a semiconductor substrate including a drift region of a first conductivity type, a transistor portion provided in the substrate, and an adjacent element portion provided in the substrate, the adjacent element and transistor portions being arranged along an arrangement direction. The transistor and adjacent element portions both include a base region of a second conductivity type provided above the drift region, trench portions formed through the base region, extending in an extending direction orthogonal to the arrangement direction on the upper surface, and having a conducting portion therein, and a first lower surface side lifetime control region provided, on a lower surface side, continuously from the transistor portion to the adjacent element portion and includes a lifetime killer. The lifetime control region is provided over entirety of the transistor portion and in a part of the adjacent element portion in a top view of the substrate.

Abstract: An object of the present invention is to provide a Schottky barrier diode using gallium oxide capable of suppressing heat generation and enhancing heat radiation performance while ensuring mechanical strength and handling performance. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide having a recessed part 23 on the second surface 22, an epitaxial layer 30 made of gallium oxide and provided on a first surface 21 of the semiconductor substrate 20; an anode electrode 40 provided at a position overlapping the recessed part 23 as viewed in the lamination direction and brought into Schottky contact with the epitaxial layer 30, and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20 and brought into ohmic contact with the semiconductor substrate 20.

Abstract: An embodiment of the present application relates to a trench capacitor and a method for manufacturing the same. The method for manufacturing the capacitor includes: fabricating a trench reaching a depth of a middle insulating layer on a semiconductor layer of an SOI substrate; and further growing an epitaxial layer of the semiconductor layer on a sidewall of the trench by selective epitaxial growth technology so as to further reduce a width of the trench; filling the trench with an electrically insulating material; and finally, fabricating two electrodes of the capacitor separately through a surface electrode. According to a trench capacitor and a method for manufacturing the same provided in an embodiment of the present application, a process flow is simple, and the capacitor manufactured has two advantages of high capacitance density and high breakdown voltage.

Abstract: A monofacial or bifacial crystalline solar cell, on the front face of which over the entire area a first surface passivation layer is arranged directly on the semiconductor interface and above this a first optically opaque, electrically conductive material is arranged in first lateral regions as a front face contact, and a first optically transparent, electrically conductive material is arranged exclusively in second lateral regions. The first optically transparent, electrically conductive material is electrically conductively connected to the front face contact and to a first region of the semiconductor material of the solar cell. The method provides for application of the first optically transparent, electrically conductive material only after the first optically opaque, electrically conductive material has been applied, in such a way that firing of the front face contact is avoided.

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Abstract: A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.

Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

Abstract: A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. There can be provided a solar cell having excellent weather resistance and high photoelectric conversion characteristics.

Abstract: A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.

Abstract: A solar module for incorporation in a motor vehicle including a front sheet having a curvature in at least two directions, at least one set of strings, wherein each string is formed of a plurality strips of a solar cell, and each of the strips is arranged in an overlapping manner with an adjacent strip, and electrically connected to an adjacent strip with an electrically conductive adhesive. The module further includes a first encapsulation layer disposed between the front sheet and a first side of the at least one set of strings, a second encapsulation layer formed on a second side of the ate least one set of strings, and a back sheet formed on the second encapsulation layer.

Abstract: A conductive film, a photovoltaic cell unit, and a photovoltaic cell module are disclosed. The conductive film adapted to electrically connect two adjacent photovoltaic cells in series includes at least one wire, a light transmissive layer, and a light transmissive resin layer, the light transmissive layer covers the wire, and the light transmissive resin layer is at least disposed between the wire and the light transmissive layer.

Abstract: An energy conversion device, particularly electromagnetic energy, such as sunlight and the like, comprising a transparent polymer sheet having an edge and a surface, on which said electromagnetic radiation can impact, and a photovoltaic cell mechanically coupled with said edge of said polymer sheet, capable of transforming in an electrical current the radiation incident on it, characterized in that said polymer sheet comprises a polymeric matrix having silicon nanostructures, functionalized with organic binders, said polymeric sheet being then luminescent with respect to a portion of said electromagnetic radiation, so as to convey the same, through a wave-guide, towards said photovoltaic cell. Also disclosed is a method for realizing a polymeric matrix, for the manufacture of a transparent polymer sheet.

Abstract: A solar module and a method for fabricating a solar module comprising a plurality of rear contact solar cells are described. Rear contact solar cells (1) are provided with a large size of e.g. 156×156 mm2, Soldering pad arrangements (13, 15) applied on emitter contacts (5) and base contacts (7) are provided with one or more soldering pads (9, 11) arranged linearly. The soldering pad arrangements (13, 15) are arranged asymmetrically with respect to a longitudinal axis (17). Each solar cell (1) is then separated into first and second cell portions (19, 21) along a line (23) perpendicular to the longitudinal axis (17).

Abstract: An optical shield for a photovoltaic cell is provided, comprising an at least one carrier element, the carrier element comprises a number of embedded optically functional cavities arranged into an at least one predetermined optical relief pattern, wherein each embedded optically functional cavity in the at least one carrier element is positioned and aligned over an individual surface structure, such as an electrode, a contact, a finger, or a busbar, provided on the surface of the photovoltaic cell.

Abstract: The present invention discloses a bifacial tube-type PERC solar cell, which comprises a rear silver major grid line, a rear aluminum grid line, a rear surface composite film, P-type silicon, an N-type emitter, a front surface silicon nitride film, and a front silver electrode. The present invention also discloses a method and a device for preparing a bifacial tube-type PERC solar cell. The present invention absorbs sunlight on both surfaces, has high photoelectric conversion efficiency, high appearance quality, and high EL yield, and could solve the problems of both scratching and undesirable deposition.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

Abstract: The invention relates to a method for making a HIT solar cell comprising the steps of providing a substrate wherein the substrate comprises amorphous layers on the surfaces of the substrate respectively, providing an electroconductive paste comprising as constituents metallic particles and a polymer system then applying the electroconductive paste to the substrate surface to obtain a precursor and finally heating the precursor through microwave radiation to obtain a solar cell.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

Abstract: An apparatus disposed below a housing, the apparatus including: a light-sensing element having a light-sensing region, and being configured to sense light reaching the light-sensing region through a first light-transmitting region of the housing; and where when the energy of the light that reaches the light-sensing region is reduced relative to the energy of the light that is expected to reach the light-sensing region, the area of the light-sensing region located under the first light-transmitting region increases.

Abstract: A light emitting device including a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface the first n-type semiconductor layer, a second light emitting part disposed on the exposed portion of the first n-type semiconductor layer and spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a first bonding part bonding and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

Abstract: A light emitting device including first, second, and third light emitting parts disposed one over another and each including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first adhesion layer disposed between the first and second light emitting parts and including first coupling patterns that are adhesive and conductive, and a second adhesion layer disposed between the second and third light emitting parts and including second coupling patterns that are adhesive and conductive, in which the third light emitting part has a mesa structure exposing a portion of the second coupling patterns of the second adhesion layer.

Abstract: A method for producing an output coupling element and an optoelectronic component are disclosed. In an embodiment, a method includes providing an inorganic dielectric element with a surface in a chamber, wherein the inorganic dielectric element rotates in the chamber during operation and providing a structuring agent comprising water and ozone and introducing the structuring agent into the chamber so that the structuring agent contacts the surface of the inorganic dielectric element and a roughening is produced in the surface, wherein the inorganic dielectric element comprises aluminum oxide.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Provided is a technique for manufacturing a semiconductor light-emitting element for which it is possible to dramatically increase light emission efficiency to a greater degree than in the past. An AlInN film provided on a GaN epitaxial film that is formed on a substrate, wherein: the AlInN film is formed by lamination of AlInN layers; between the laminated AlInN layers, there is provided a cap layer that comprises GaN, AlN, or AlGaN, and has a thickness of 0.1-10 nm; a super lattice structure is formed; the total thickness exceeds 200 nm; and the root-mean-square height RMS is 3 nm or less. A method for forming an AlInN film, the method being such that: a step for forming an AlInN layer is repeated a plurality of times, said step involving using any of an organometallic vapor phase growth method, a molecular beam epitaxy method, and a sputtering method to form the AlInN layer to a thickness of 200 nm or less by epitaxial growth in an atmosphere of 700-850° C.

Abstract: A light emitting device package disclosed to an embodiment of the invention includes a body including an upper surface and a lower surface, the body including a first recess and a second recess concaved from the lower surface toward the upper surface; a light emitting device disposed on the body and including a first bonding portion and a second bonding portion; and first and second conductive portions respectively disposed in the first recess and the second recess, wherein the body includes a first through hole and a second through hole penetrating an upper surface of each of the first recess and the second recess and the upper surface of the body, and wherein each of the first and second conductive portions extends into the first and second through holes and is electrically connected to the first bonding portion and the second bonding portion, respectively.

Abstract: Provided is a wavelength conversion member capable of suppressing excessive heating of a phosphor layer and a light emitting device using the same. The wavelength conversion member 10 includes: a heat dissipation substrate 11; a phosphor layer 12 provided on the heat dissipation substrate 11; and a bonding material layer 13 provided between the heat dissipation substrate 11 and the phosphor layer 12, wherein the bonding material layer 13 includes a thermally conductive porous body 14 and a bonding material 15 and the thermally conductive porous body 14 is impregnated with the bonding material 15.

Abstract: A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

Abstract: An LED light bulb, consisting of: a lamp housing doped with a golden yellow material or its surface coated with a yellow film; a bulb base connected to the lamp housing; a stem connected to the bulb base and located in the lamp housing, the stem comprises a stand extending to the center of the lamp housing; and a single LED filament, disposed in the lamp housing, the LED filament comprising: a light conversion layer, coated on at least two sides of the LED chip and the conductive electrodes, and a portion of each of the conductive electrodes is not coated with the light conversion layer, the light conversion layer has at least one top layer and one base layer, the top layer and the base layer are disposed on the opposing surface of the LED chip, wherein the top layer of the light conversion layer in the conductive section comprises a wavy concave structure with groove, the two adjacent grooves of the wavy concave structure have different width at the positions aligned in the axial direction of the LED filamen

Abstract: An LED light bulb, comprising of: a lamp housing; a bulb base connected to the lamp housing; a stem connected to the bulb base and located in the lamp housing, the stem comprises a stand extending to the center of the lamp housing; a single LED filament, disposed in the lamp housing, the LED filament comprising: a plurality of LED sections, each of the LED sections includes at least two LED chips that are electrically connected to each other; a plurality of conductive sections, each of the conductive sections is located between the two adjacent LED sections and configured to electrically connect the two adjacent LED sections, each of the conductive sections includes at least one conductor that connects the two adjacent LED sections, each of the conductor has at least one through hole; a light conversion layer comprising a base layer and a top layer, wherein the base layer of the light conversion layer is filled into the through hole of the conductor and then contacting the surface of the top layer.

Abstract: A display apparatus includes a plurality of unit modules; and a cover configured to support the plurality of unit modules. Each of the plurality of unit modules includes: a substrate; a plurality of inorganic light emitting diodes provided on a mounting surface of the substrate; and an encapsulation layer formed on the mounting surface of the substrate to cover the plurality of inorganic light emitting diodes and the mounting surface of the substrate. The encapsulation layer includes a viscoelastic material having varying viscoelasticity based on temperature being applied to the viscoelastic material.

Abstract: An LED filament includes an underlying layer exhibiting a first appearance at a first temperature, and an over-coated layer comprising a thermochromic material that exhibits at the first temperature, a preselected appearance other than the first appearance, and at a second temperature, a transparent or translucent appearance.

Abstract: A method of producing side-emitting components includes providing a plurality of semiconductor chips on an auxiliary carrier, wherein the semiconductor chips on the auxiliary carrier are spaced apart from each other and each have a side surface provided with a transparent protective layer; covering the semiconductor chips with a radiation-reflecting molding compound so that in a plan view of the auxiliary carrier, the semiconductor chips are completely covered by the molding compound; and singulating the molding compound and the semiconductor chips into a plurality of components so that the components each include a semiconductor chip, wherein the components are singulated at the associated transparent protective layer, as a result of which the components each have a radiation exit surface exposed by the molding compound and formed by a surface of the remaining or exposed transparent protective layer.

Abstract: The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.

Abstract: The present invention relates to a display apparatus using a semiconductor light emitting device and a manufacturing method therefor and, more specifically, to a display apparatus using a semiconductor light emitting device. The display apparatus according to the present invention comprises: a wiring board which comprises a wiring electrode; a conductive adhesive layer which covers the wiring electrode; and a plurality of semiconductor light emitting devices which are coupled to the conductive adhesive layer and are electrically connected to the wiring electrode, wherein the conductive adhesive layer is applied in a patterned form on each electrode of the semiconductor light emitting devices such that a plurality of adhesive regions are provided spaced apart from each other on the wiring board.

Abstract: A light-emitting device package includes a lead frame, a light-emitting device chip, a molding structure, and a plurality of slots. The lead frame includes a first lead and a second lead including metal and spaced apart from each other. The light-emitting device chip is mounted on a first area of the lead frame, which includes a part of the first lead and a part of the second lead. The molding structure includes an outer barrier surrounding an outside of the lead frame and an inner barrier. The plurality of slots are formed in each of the first lead and the second lead. The inner barrier divides the lead from into the first area and a second area. The inner barrier fills between the first lead in the second lead. The second area is located outside of the first area. The plurality of slots are filled by the molding structure.