Abstract: A piezoelectric actuator that includes a multilayer body, a low-potential outer electrode, and a high-potential outer electrode. The multilayer body includes multiple alternately stacked piezoelectric ceramic layers and planar electrodes. The planar electrodes include low-potential planar electrodes electrically connected to the low-potential outer electrode and high-potential planar electrodes electrically connected to the high-potential outer electrode. The planar electrode positioned most outwardly on the side of a first main surface of the multilayer body is a low-potential planar electrode. The inner surface of this low-potential planar electrode contacts the ? side of polarization in an active region, and the outer surface of this low-potential planar electrode is exposed on an outside of the multilayer body. On the side of a second main surface of the multilayer body, a high-potential planar electrode is not exposed on the outside of the multilayer body.

Abstract: A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

Abstract: Proposed is a method for producing a polymeric piezoelectric composite having boron nitride nanotubes (BNNT) dispersed therein, the method including: a solution-providing step for providing a polymeric solution; a dispersing step for dispersing BNNT in the polymeric solution; and an electro spinning step for electro spinning the polymeric solution with BNNT dispersed therein, thereby producing micro- and/or nano fibers based polymeric piezoelectric composites.

Abstract: In a non-limiting embodiment, a magnetic memory device includes a memory component having a plurality of magnetic storage elements for storing memory data, and one or more sensor components configured to detect a magnetic field external to the memory component. The sensor component outputs a signal to one or more components of the magnetic memory device based on the detected magnetic field. The memory component is configured to be terminated when the signal is above a predetermined threshold value. In some embodiments, a magnetic field is generated in a direction opposite to the direction of the detected external magnetic field when the signal is above the predetermined threshold value.

Abstract: Various embodiments of the present application are directed towards a method for forming a flat via top surface for memory, as well as an integrated circuit (IC) resulting from the method. In some embodiments, an etch is performed into a dielectric layer to form an opening. A liner layer is formed covering the dielectric layer and lining the opening. A lower body layer is formed covering the dielectric layer and filling a remainder of the opening over the liner layer. A top surface of the lower body layer and a top surface of the liner layer are recessed to below a top surface of the dielectric layer to partially clear the opening. A homogeneous upper body layer is formed covering the dielectric layer and partially filling the opening. A planarization is performed into the homogeneous upper body layer until the dielectric layer is reached.

Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.

Abstract: A magnetic tunnel junction reference layer, magnetic tunnel junctions and a magnetic random access memory are provided, wherein the magnetic tunnel junction reference layer includes: an antiferromagnetic structure layer, which comprises a plurality of stacked metal magnetic layer units, wherein each of the metal magnetic layer units comprises a spacer layer and a magnetic layer on a surface of the spacer layer. The present invention forms a synthetic antiferromagnetic structure through multilayer stack of the metal spacer layer and the magnetic layer, so as to increase thermal stability of the magnetic tunnel junction reference layer with perpendicular magnetic anisotropy and reduce design complexity as well as cost of the film layers. The present invention forms a multilayer film structure without oxides, which has strong perpendicular magnetic anisotropy, high thermal stability, simple film layer, and low cost, thereby promoting large-scale use of the magnetic memory.

Abstract: Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nickel-chromium-ruthenium alloy including ruthenium in an amount ranging from seven atomic percent by weight to eighty-four atomic percent by weight.

Abstract: The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl2O4 as a basic configuration.

Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.

Abstract: A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including ?1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ?1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.

Abstract: Provided is a negative differential resistance element having a 3-dimension vertical structure. The negative differential resistance element having a 3-dimension vertical structure includes: a substrate; a first electrode that is formed on the substrate to receive a current; a second semiconductor material that is formed in some region of the substrate; a first semiconductor material that is deposited in some other region and the first electrode of the substrate and some region of an upper end of the second semiconductor material; an insulator that has a part vertically erected from the substrate, the other part vertically erected from the second semiconductor material, and an upper portion stacked with a first semiconductor material; and a second electrode that is formed at an upper end of the second semiconductor material to output a current, thereby significantly reducing an area of the device and greatly improving device scaling and integration.

Abstract: A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD) and forming a RRAM stack over a conductive line of the plurality of conductive lines, the RRAM stack including a bottom electrode, a conductive pillar, thermal conducting layers, and a top electrode. The thermal conducting layers are disposed on opposed ends of the conductive pillar. The thermal conducting layers directly contact the top electrode and the bottom electrode. The thermal conducting layers include aluminum oxide (Al2O3).

Abstract: A resistive memory device including a first electrode and a second electrode facing each other and a variable resistance layer disposed between the first electrode and the second electrode, wherein the variable resistance layer includes Cd-free quantum dots (Cd-free quantum dots) and at least a portion of the Cd-free quantum dots include a Cd-free quantum dot including a halide anion on a surface of the Cd-free quantum dot, a method of manufacturing the same and an electronic device.

Abstract: The techniques described herein relate to methods and apparatus for a resistive switching device. The resistive switching device includes a first electrode formed in a substrate. The resistive switching device also includes a plurality of layers formed above the first electrode, including a plurality of oxide layers, wherein one or more of the plurality of oxide layers comprise doped oxide layers, and one or more conductive spacers, wherein each pair of oxide layers of the plurality of oxide layers are separated by a conductive spacer of the one or more conductive spacers. The resistive switching device also includes a second electrode formed above the plurality of layers, such that the first electrode, the plurality of layers, and the second electrode are in series.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.

Abstract: A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.

Abstract: A method of forming a resistive processing unit is provided. The method includes forming a spacer on a substrate. The method further includes forming an intercalation layer segment on opposite sides of the spacer, and replacing a portion of each of the intercalation layer segments with an insulating region. The method further includes replacing the spacer with an electrolyte layer.

Abstract: Various implementations described herein are directed to a device having a multi-layered structure that may be formed on a substrate. The multi-layered structure may have a switching layer, and the switching layer may be formed with correlated electron material (CEM). The multi-layered structure may have at least one barrier layer, and the at least one barrier layer may be referred to as at least one hydrogen barrier layer.

Abstract: Described herein are devices incorporating plasmon Casimir cavities, which modify the distribution of allowable plasmon modes within the cavities. The plasmon Casimir cavities can drive charge carriers from or to an electronic device adjoining the plasmon Casimir cavity by modifying the distribution of zero-point energy-driven plasmons on one side of the electronic device to be different from the distribution of zero-point energy-driven plasmons on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of carriers in very short time intervals, such as in 1 picosecond or less.

Abstract: The present disclosure provides a mask and a manufacturing method thereof, an evaporation method and a display screen, to achieve normal display of an area around such components as an earpiece, a front camera, and sensors on the front of a display screen, and increase the screen-to-body ratio. The mask comprises a substrate provided with at least one opening, an orthographic projection of the opening on a display plane of a display screen to be fabricated coinciding with a display area of the display screen to be fabricated; a shielding part arranged inside the opening, an orthographic projection of the shielding part on the display plane coinciding with an orthographic projection of a component to be shielded in the display screen to be fabricated on the display plane; and a connecting part located between the shielding part and a side wall of the opening.

Abstract: A manufacturing method for carbon nanotube composite film is disclosed. The method comprises steps of: providing a substrate; coating a first aqueous solution dissolved with a charged polymer on a substrate to form a polymer film; dispersing a single-wall carbon nanotube powder into a second aqueous solution dissolved with a charged compound in order to obtain a semiconductor-type single-wall carbon nanotube aqueous solution, and charge properties of the charged compound and the charged polymer are opposite; coating the semiconductor-type single-wall carbon nanotube aqueous solution on the polymer film; after standing for a predetermined period of time, washing with a deionized water to remove an unabsorbed semiconductor-type single-wall carbon nanotube and excess charged polymer; and air drying, forming a carbon nanotube film on the polymer film. A manufacturing method for carbon nanotube TFT and a carbon nanotube TFT are also disclosed. The carbon nanotubes can be well tiled onto the substrate.

Abstract: A compound is represented by a formula (2) below.

Abstract: An organic light emitting device and a display device, the organic light emitting device including a first electrode; a hole transport region on the first electrode; an emission layer on the hole transport region; an electron transport region on the emission layer; and a second electrode on the electron transport region, wherein the hole transport region includes a compound represented by the following Formula 1:

Abstract: The invention relates to an organic compound, in particular for the application in optoelectronic devices. According to the invention, the organic compound consists of a first chemical moiety with a structure of formula I, and two second chemical moieties, each independently from another with a structure of formula II, wherein the first chemical moiety is linked to each of the two second chemical moieties via a single bond; wherein T, V is selected from the group consisting of RA and R1; W, X, Y: are the binding site of a single bond linking the first chemical moiety to one of the two second chemical moieties or is selected from the group consisting of RA and R2; RA is 1,3,5-triazinyl substituted with two substituents RTz: which is bonded to the structure of Formula I via the position marked by the dotted line; RW, RX, RY are the binding site of a single bond linking the first chemical moiety to one of the two second chemical moieties or is RI.

Abstract: A novel organic compound is provided. That is, a novel organic compound that is effective in improving the element characteristics and reliability is provided. The organic compound has a benzofuroquinoxaline skeleton or a benzothienoquinoxaline skeleton. The organic compound is represented by General Formula (G1). In the formula, Q represents O or S, and each of R1 to R8 independently represents any of hydrogen, a halogeno group, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms. At least one of R1 to R8 includes a substituted or unsubstituted condensed aromatic or heteroaromatic ring having 3 to 24 carbon atoms.

Abstract: Provided are a compound represented by Formula 1, an organic electroluminescent element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and electroluminescent device thereof, and by comprising the compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electroluminescent element can be lowered, and the luminous efficiency and life time of the organic electroluminescent element can be improved.

Abstract: The invention relates to compounds of formula (1) which are suitable for use in electronic devices, and to electronic devices, in particular organic electroluminescent devices, containing said compounds.

Abstract: Provided is a compound of Chemical Formula 1: wherein: L is a single bond, a substituted or unsubstituted C6-60 arylene, or a substituted or unsubstituted C2-60 heteroarylene containing at least one selected from the group consisting of N, O and S, and Ar is a substituted or unsubstituted C2-60 heteroaryl containing at least one selected from the group consisting of N, O and S, and to an organic light emitting device comprising the same.

Abstract: An organometallic compound represented by Formula 1: M11(L11)n11(L12)n12??Formula 1 wherein, in Formula 1, M11, L11, L12, n11, and n12 are the same as described in the specification.

Abstract: Provided are a compounds comprising a first ligand LA of

Abstract: An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer. The emission layer includes at least one organometallic compound of Formula 1, and at least one selected from a second compound and a third compound, where the organometallic compound, the second compound, and the third compound are different from each other.

Abstract: A metal complex containing three different ligands which may be used as a light-emitting material in a light-emitting layer of an organic electroluminescent device. These new complexes can not only achieve device performed desired to be adjusted or improved by adjusting substituents but also have the effect of effectively controlling increase of the evaporation temperature. Further disclosed are an electroluminescent device and a compound formulation including the metal complex.

Abstract: An organic light-emitting material contains a 6-silyl-substituted isoquinoline ligand. The organic light-emitting material is a metal complex containing a 6-silyl-substituted isoquinoline ligand and may be used as a light-emitting material in a light-emitting layer of an organic electroluminescent device. These new complexes can provide redder and saturated emission and meanwhile demonstrate a significantly improved lifetime and efficient and excellent device performance. Further disclosed are an electroluminescent device and a compound formulation including the metal complex.

Abstract: An organometallic compound represented by Formula 1: M(L1)n1(L2)n2??Formula 1 wherein in Formulae 1, 2A, and 2B, groups and substituents are the same as disclosed in the specification.

Abstract: A flexible display apparatus is provided. The flexible display apparatus includes a unitary flexible display panel having a display area, a peripheral area, and a bendable area connecting the display area and the peripheral area, wherein the bendable area includes one or more wire-free portions configured to absorb impact applied on the bendable area; a support sandwiched between the display area and the peripheral area, wherein the support has a first side, a second side facing the first side, and a third side connecting the first side and the second side, the display area is on the first side, the peripheral area is on the second side, and the unitary flexible display panel is bend about the third side; and a driving circuit in the peripheral area and connecting to a plurality of signal lines extending through the bendable area into the display area.

Abstract: Provided is a method for manufacturing a display device. The method includes forming a display unit including a bending area on a first surface of a mother substrate, aligning a mask in which a mask opening is defined on a second surface of the mother substrate, plasma treating the second surface of the mother substrate, removing the mask and attaching a protective film to the second surface of the mother substrate, and removing a portion of the protective film to form a film opening corresponding to the bending area. The mask opening corresponds to the bending area.

Abstract: In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

Abstract: A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Abstract: A display device includes a luminescence element layer to emit a first color light, and a light control layer on the luminescence element layer. The light control layer includes a first light control part including a first luminescence material to emit a second color light in a shorter wavelength range than the first color light, a second light control part to transmit the first color light, and a third light control part including a second luminescence material to emit a third color light in a longer wavelength range than the first color light, and accordingly, a long life-time of the display device may be achieved.

Abstract: A display apparatus and a manufacturing method of the display apparatus are provided. The display apparatus includes a substrate and a first sub-pixel located on the substrate. The first sub-pixel includes a first bottom electrode, a first light-emitting layer, and a first top electrode. The first light-emitting layer is located on the first bottom electrode. The first light-emitting layer includes a first groove structure or a first protrusion structure. The first top electrode is located on the first light-emitting layer.

Abstract: An organic light emitting device including, in sequence, a first electrode, a first charge transport layer, a second charge transport layer in contact with the first charge transport layer, a light emitting layer in contact with the second charge transport layer, and a second electrode, wherein the first charge transport layer includes a first material and a second material, the second charge transport layer includes the second material and a third material, and the light emitting layer includes the third material and a fourth material.

Abstract: An organic light emitting device including, in sequence, an anode, a light emitting layer, a first electron transport layer, a second electron transport layer, and a cathode, wherein the second electron transport layer includes a first material and a second material different from the first material, and the first electron transport layer includes a third material and a fourth material different from the third material.

Abstract: Provided is a production method related to an organic thin film formed using an organic electronic material containing a charge transport compound, the method suppressing any deterioration in performance during film formation and enabling the formation of an organic thin film having excellent performance. The method for producing an organic thin film includes a step of forming a coating film of an organic electronic material containing a charge transport compound, and a step of heating the coating film under an inert gas atmosphere to form an organic thin film.

Abstract: A highly reliable light-emitting device and a manufacturing method thereof are provided. A light-emitting element and a terminal electrode are formed over an element formation substrate; a first substrate having an opening is formed over the light-emitting element and the terminal electrode with a bonding layer provided therebetween; an embedded layer is formed in the opening; a transfer substrate is formed over the first substrate and the embedded layer; the element formation substrate is separated; a second substrate is formed under the light-emitting element and the terminal electrode; and the transfer substrate and the embedded layer are removed. In addition, an anisotropic conductive connection layer is formed in the opening, and an electrode is formed over the anisotropic conductive connection layer. The terminal electrode and the electrode are electrically connected to each other through the anisotropic conductive connection layer.

Abstract: A display device according to an embodiment may include a base substrate, a circuit layer, a light emitting element layer, and a module hole. The light emitting element layer may include a first electrode, a light emitting layer, and a second electrode. The second electrode may include a first portion that is not overlapped with the module hole and has a first thickness and a second portion between the module hole and the first portion and having a thickness that gradually increases in a direction toward the first portion. Thus, the display device may improve in durability in a hot and humid environment.

Abstract: The invention provides a full-screen display device based on flexible display panel, comprising a housing and a flexible display panel; a first and a second recesses penetrating the flexible display panel in thickness direction being disposed respectively at splicing ends at both ends of the flexible display panel; the two ends of the flexible display panel being spliced together on back of the housing to simultaneously wrap front and back of the housing to form a first display portion covering the front of the housing and a second display portion covering the back of the housing; and the first recess and the second recess communicating and surrounding to form a groove provided for a first element on the housing to pass through. Since the splicing ends of the flexible display panel are located on the back of the housing, the speaker and camera can be placed on the back display.

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided, which pertain to the field of display technologies. The display substrate includes a display area and a package area surrounding the display area. The display substrate includes a base substrate and an interlayer insulating layer on the substrate. The interlayer insulating layer has a groove, an orthographic projection of the groove on the base substrate is located within an orthographic projection of the package area on the base substrate, and the groove is provided with a sealing material.