Abstract: An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

Abstract: A wafer processing method for processing a wafer having a chamfered portion formed at a periphery thereof includes a tape attaching step of attaching a protective tape to a front surface of the wafer and making a diameter of the protective tape coincide with a diameter of the wafer; a grinding step of grinding a back surface of the wafer held by a holding table with use of grinding stones so as to thin the wafer to a thickness thinner than half of an original thickness, to reduce the diameter of the wafer, and to form a protruding portion where the protective tape protrudes from the wafer; and a contracting step of heating and contracting the protruding portion of the protective tape after the grinding step is carried out.

Abstract: According to an embodiment, an etching method includes forming an uneven structure including a protruding portion on a surface of a semiconductor substrate, the protruding portion having a reverse tapered cross-sectional shape; forming a catalyst layer on the surface of the semiconductor substrate at a top surface of the protruding portion, the catalyst layer including a noble metal; and supplying an etching solution to the catalyst layer to etch the semiconductor substrate with an assist from the noble metal as a catalyst.

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of ?20° C. or lower, preferably ?20° C. to ?60° C., and etching the silicon oxide film from the end portion in a lateral direction.

Abstract: A dry etching method according to one embodiment of the present disclosure includes plasmatizing a dry etching agent and etching a silicon oxide or a silicon nitride with the plasmatized dry etching agent, wherein the dry etching agent comprises CF3I and a C2-C3 fluorine-containing linear nitrile compound, and wherein the concentration of the C2-C3 fluorine-containing linear nitrile compound relative to the CF3I is higher than or equal to 1 vol. ppm and lower than or equal to 1 vol %.

Abstract: A substrate processing apparatus includes: a chamber having at least one gas inlet and at least one gas outlet; a substrate support disposed in the chamber; and a controller. The controller causes (a) placing a substrate on the substrate support, the substrate including a base layer and a first layer formed on the base layer; (b) etching the first layer to form a recess in the first layer; (c) when determined that the recess satisfies a predetermined condition, forming a first film on a bottom surface of the recess by forming an inhibitor on the bottom surface of the recess, a predetermined gas species being not adsorbed to the first film; (c) after (b), forming a second film on a side wall of the recess using the predetermined gas species as a precursor gas; and (d) etching the first layer through the recess.

Abstract: A semiconductor structure and a forming method thereof are provided.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes partially removing the second layer. The method includes performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures include the stop layer and the upper portion of the first layer remaining after the etching process. The method includes removing the protrusion structures.

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

Abstract: A method for fabricating a power semiconductor package includes: providing a leadframe having a die pad and a frame, wherein the die pad is connected to the frame by at least one tie bar; attaching a semiconductor die to the die pad; laser cutting through the at least one tie bar, thereby forming a cut surface; and after the laser cutting, molding over the die pad and the semiconductor die, wherein the cut surface is completely covered by molding compound.

Abstract: A manufacturing method of a semiconductor device includes sealing a metal plate on which a semiconductor chip and a control IC are mounted by injecting molding resin raw material into a cavity from an inlet, filling the cavity with the molding resin raw material, and discharging excessive molding resin raw material from an outlet. In the case of the semiconductor device manufactured in this way, at least, generation of voids is reduced in an area around the semiconductor chip and the control IC. Thus, occurrence of an electrical discharge in the semiconductor device is reduced, and deterioration of the reliability of the semiconductor device is prevented.

Abstract: Disclosed is a method for fabricating a semiconductor package. A mold press with upper and lower chases is used. A molded underfill (MUF) material is dispensed on a bottom surface of a mold cavity to form a first dispensed pattern with a serpentine shape. A base substrate on which die stacks are mounted is loaded on the upper chase. The mold cavity in which the die stacks are inserted is closed and MUF material flows between the die stacks to impregnate the die stacks.

Abstract: The present invention relates to an etching device using an etching chamber, comprising: an etchant storage chamber in which an etchant is stored; a connection unit communicating with the etching liquid storage chamber; an etching chamber which is connected with the etching liquid storage chamber through the connection unit, and in which an object is etched; and a pressurization maintaining unit for maintaining the etching liquid storage chamber and/or the etching chamber in a pressurized atmosphere.

Abstract: A substrate processing apparatus includes a fluid supply unit that supplies a fluid that includes a pressurized vapor or mist of a purified water, a processing liquid supply unit that supplies a processing liquid that includes at least sulfuric acid, and a nozzle that includes a first discharge port that discharges a fluid that is supplied from the fluid supply unit, a second discharge port that discharges a processing liquid that is supplied from the processing liquid supply unit, and a guiding route that is communicated with the first discharge port and the second discharge port and guides a mixed fluid of a fluid that is discharged from the first discharge port and a processing liquid that is discharged from the second discharge port, where a cross-sectional area of the guiding route is greater than a cross-sectional area of the first discharge port.

Abstract: A laser beam irradiating unit of a laser processing apparatus includes a laser oscillator configured to oscillate a laser, a condenser configured to condense a laser beam emitted from the laser oscillator, and a plasma light detector configured to detect plasma light emitted from a region subjected to processing by application of the laser beam.

Abstract: The application provides a repair device for a display panel, including: a defect sensor configured to obtain defect information; a chip pick-and-place part configured to pick up, store, and release light-emitting chips, wherein the chip pick-and-place part includes a chip storage cavity and a controller, the chip storage cavity is used to store the light-emitting chips, and the controller is configured to pick up and release a chip; a chip moving part connected to the chip pick-and-place part for moving the chip pick-and-place part to positions where defects are located according to the defect information; and a chip bonding part.

Abstract: A semiconductor inspection device, including a stage having first and second surfaces opposite to each other, a first holding part for holding the semiconductor wafer apart from the first surface and protruding from the first surface of the stage, a plurality of air suction holes and air supply holes, through which a gas is suctioned from or supplied to a space between the semiconductor wafer and the stage, and an imaging unit configured to capture an image of a second main surface of the semiconductor wafer, after the gas is concurrently suctioned from, and supplied to, the space between the semiconductor wafer and the stage, to thereby correct a warpage of the semiconductor wafer. Each of the air suction holes and the air supply holes has a first opening provided at a predetermined position in the first surface of the stage, and a second opening for connecting to a suction unit or an air supply unit.

Abstract: An apparatus and method for measuring loop height of overlapping bonded wires, interconnecting the pads of a single or stacked silicon chips to the pads of a substrate taking the steps of: focussing of an optical assembly at multiple points of the bond wire including overlapping bond wires, capturing an image of the bond wire at each of the predetermined focused points; calculating the height of each point of the wire with respect to a reference plane; and tabulating the height data using the X, Y and Z coordinates.

Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.

Abstract: A slit door assembly includes a door plate; a supporting arm including a first end coupled to the door plate and a second end away from the first end; and a linkage unit including a rod member and a pin member protruding from the rod member and connecting to the second end of the supporting arm. A fillet is disposed between the pin member and the rod member. A method of operating a slit door assembly includes receiving a door plate; receiving a supporting arm coupled to the door plate; and coupling a linkage unit to the supporting arm, wherein the linkage unit includes a pin member and a rod member, the pin member is protrudes from the rod member and having a fillet. The method further includes applying a first force to the linkage unit to move the door plate from a first position to a second position.

Abstract: A semiconductor fabricating apparatus may include a collet structure configured to pick-up a semiconductor chip. The collet structure may include a holder, a plate, an absorption member and an edge contact. The holder may be configured to downwardly receive vacuum. The holder may include a magnet arranged in the holder. The plate may include an upper surface magnetically and mechanically combined with the holder. The plate may include a sidewall wholly exposed by the holder. The plate may receive the vacuum from the holder. The absorption member may make contact with the plate to pick-up the semiconductor chip using the vacuum received from the plate. The edge contact may include a protrusion having a first length protruded from an edge portion of a bottom surface of the holder to make contact with the plate.

Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Abstract: Disclosed is a pad structure for transferring a flat panel that includes a circular adhesive force adjustment pattern having a predetermined diameter in the center of the pad body, and a ring-shaped microciliated member having a circumferential surface surrounding the first adhesive force adjustment pattern and including a plurality of cilia spaced apart from one another, and thus provides advantages of improving the adhesive force per unit area due to the functions of the pad, without a separate vacuum device, of being easily and simply attached to and detached from the blade at a desired position thereon, and of maximizing productivity by easily and smoothly performing quality control, preventive maintenance, and inventory management of the pad for transferring a flat panel based on serial number standardization (product information standardization).

Abstract: A chuck assembly for holding a plate comprises a member configured to hold the plate, the member including a flexible portion configured to have a central opening, and a first cavity formed by the flexible portion, wherein the plate is held by the flexible portion by reducing pressure in the first cavity, a light-transmitting member covering the central opening of the member, and a fluid path in communication with a second cavity defined by the member, the plate held by the member and the light-transmitting member for pressurizing the second cavity.

Abstract: A substrate holder including: a main body having a main body surface; a plurality of burls projecting from the main body surface and configured for supporting the substrate; and an edge seal projecting from the main body surface, wherein: the edge seal is spaced apart from the plurality of burls so as to define a gap therebetween, the gap having a width greater than or equal to about 75% of a pitch of the plurality of burls; the plurality of burls includes a first group of burls and a second group of burls surrounding the first group of burls; and the stiffness in the direction perpendicular to the support plane per unit area of the second group of burls is greater than or equal to about 150% of the stiffness in the direction perpendicular to the support plane per unit area of the first group of burls.

Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.

Abstract: Processing methods may be performed to form an airgap spacer on a semiconductor substrate. The methods may include forming a spacer structure including a first material and a second material different from the first material. The methods may include forming a source/drain structure. The source/drain structure may be offset from the second material of the spacer structure by at least one other material. The methods may also include etching the second material from the spacer structure to form the airgap. The source/drain structure may be unexposed to etchant materials during the etching.

Abstract: A method for manufacturing a flash memory device is provided. The method includes: providing a substrate structure including a substrate, a plurality of active regions and a plurality of first isolation regions alternately arranged in a first direction and extending in a second direction different from the first direction, a plurality of gate structures on the substrate, the gate structures being spaced apart from each other and extending in the second direction, and a gap structure between the gate structures; forming an overhang surrounding an upper portion of the gate structures to form a gap structure between the gate structures; and forming a second isolation region filling an upper portion of the gap structures and leaving a first air gap between the gap structures.

Abstract: A method for manufacturing a semiconductor apparatus may include forming a patterned mask over a substrate, so that a first region of a first main surface of the substrate is covered by a plurality of spaced-apart sub-structural elements of a dielectric material, and second regions of the first main surface are not covered. Each of the plurality of sub-structural elements is arranged between adjacent second regions. The method also comprises carrying out a selective growth process of semiconductor material, so that the semiconductor material is grown over the second regions of the first main surface.

Abstract: An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: A system for interconnecting at least two die each die having a plurality of conducting layers and dielectric layers disposed upon a substrate which may include active and passive elements. In one embodiment there is at least one interconnect coupling at least one conducting layer on a side of one die to at least one conducting layer on a side of the other die. Another interconnect embodiment is a slug having conducting and dielectric layers disposed between two or more die to interconnect between the die. Other interconnect techniques include direct coupling such as rod, ball, dual balls, bar, cylinder, bump, slug, and carbon nanotube, as well as indirect coupling such as inductive coupling, capacitive coupling, and wireless communications. The die may have features to facilitate placement of the interconnects such as dogleg cuts, grooves, notches, enlarged contact pads, tapered side edges and stepped vias.

Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.

Abstract: A first MISFET is formed on a semiconductor layer of an SOI substrate in a circuit region and a second MISFET composing a TEG for VC inspection is formed on the semiconductor layer of the SOI substrate in a TEG region. An interlayer insulating film is formed, contact holes are formed in the interlayer insulating film, and plugs are formed in the contact holes, respectively. In the TEG region, the plugs include a plug electrically connected to both the semiconductor substrate composing the SOI substrate and the semiconductor layer composing the SOI substrate.

Abstract: Techniques herein include methods for fabricating three-dimensional (3D) logic or memory stack integrated with 3D metal routing. The methods can include stacking metal layers within existing 3D silicon stacks. A first portion can be masked while a second, uncovered portion is etched. Predetermined layers in a bottom portion (disposed closer to the substrate) of the multilayer stack can be replaced with a conductor. The second portion can be masked while the first portion is uncovered and processed. This can enable higher density 3D circuits by having multiple metal lines contained within a multilayer 3D nano-sheet. Advantageously, this facilitates easier connections for 3D logic and memory. Moreover, better speed performance can be achieved by having reduced distance for signals to travel to transistor connections.

Abstract: A collector layer, a base layer, an emitter layer, and an emitter mesa layer are placed above a substrate in this order. A base electrode and an emitter electrode are further placed above the substrate. The emitter mesa layer has a long shape in a first direction in plan view. The base electrode includes a base electrode pad portion spaced from the emitter mesa layer in the first direction. An emitter wiring line and a base wiring line are placed on the emitter electrode and the base electrode, respectively. The emitter wiring line is connected to the emitter electrode via an emitter contact hole. In the first direction, the spacing between the edges of the emitter mesa layer and the emitter contact hole on the side of the base wiring line is smaller than that between the emitter mesa layer and the base wiring line.

Abstract: A system, method, and computer-readable medium are disclosed automatic validation of light emitting diodes (LEDs) of disk drives in disk processor enclosures (DPEs) or disk array enclosures (DAEs) during the manufacturing and integration of computer systems. An automated test script is performed in support of the integration of the computer system that includes the LEDs and includes a validation and checking step for the LEDs. A determination is made if a camera is properly calibrated to identify the LEDs as part of the validating and checking step for the LEDs. A DPE or DAE that contains disk drive units that include the LEDs are identified, and an indication is performed as to which LEDs pass or fail.

Abstract: The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze.

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

Abstract: A semiconductor package structure and a method for manufacturing the same are provided. The method includes: providing a package body includes a first semiconductor device, wherein the first semiconductor device includes a plurality of first electrical contacts disposed adjacent to an active surface of the first semiconductor device; measuring the actual positions of the first electrical contacts of the first semiconductor device; providing a plurality of second electrical contacts outside the first semiconductor device; and forming an interconnection structure based on the actual positions of the first electrical contacts of the first semiconductor device and the positions of the second electrical contacts satisfying a predetermined electrical performance criterion by a mask-less process, so as to connect the first electrical contacts and the second electrical contacts and maintain signal integrity during transmission.

Abstract: Present disclosure provides a semiconductor stress monitoring structure, including a substrate, first conductive segments, second conductive segments, and a sensing structure. The first conductive segments are over the substrate and arranged parallel to each other. The second conductive segments are arranged below the first conductive segments and parallel to each other. The sensing structure is proximate to the substrate. The sensing structure is configured to respond to a stress caused by the first conductive segments and the second conductive segments and generate a monitoring signal.

Abstract: A display module including a glass substrate; a thin film transistor layer disposed in a first area of the glass substrate; a plurality of connection pads disposed in a second area extending from the first area of the glass substrate and electrically connected to the thin film transistor layer; a plurality of test pads disposed in a third area extending from the second area of the glass substrate and electrically connected to the plurality of connection pads, respectively, and a plurality of connection wirings electrically connecting the plurality of connection pads and the plurality of test pads.

Abstract: A test element group (TEG) test key of an array substrate and a display panel thereof are provided. The TEG test key of the array substrate includes a glass substrate, a multi-buffer layer, an active layer, a gate insulating layer, a gate electrode layer, an interlayer insulating layer, a source and drain electrode layer, and an organic planarization layer stacked in sequence. The TEG test key of the array substrate is defined with two test zones and a connecting zone, and each test zone is provided with a groove exposing the gate electrode layer. The gate electrode layer in the test zones is electrically connected to the source and drain electrode layer in the connecting zone.

Abstract: A display substrate and a display apparatus are provided, the display substrate includes: a base substrate including a display area and a peripheral area surrounding the display area; a plurality of sub-pixel units in the display area; a plurality of data lines in the display area and electrically coupled to the plurality of sub-pixel units; a plurality of data transmission lines in the peripheral area on at least one side of the display area and electrically coupled to the plurality of data lines; a plurality of first pads and a plurality of second pads located between the plurality of first pads and the plurality of data transmission lines; a plurality of third pads between the plurality of first pads and the plurality of second pads; and a plurality of multiplexers between the plurality of second pads and the plurality of third pads.

Abstract: A semiconductor package includes: a lower package: an upper substrate on the lower package: and connection members connecting the lower package to the upper substrate. wherein the lower package includes: a lower substrate; and a lower semiconductor chip, wherein the upper substrate includes: an upper substrate body: upper connection pads combined with the connection members: and auxiliary members extending from the upper substrate body toward the lower substrate, wherein the connection members are arranged in a first horizontal direction to form a first connection member column, wherein the auxiliary members are arranged in the first horizontal direction to form a first auxiliary member column, wherein the first connection member column and the first auxiliary member column are located between a side surface of the lower semiconductor chip and a side surface of the lower substrate, and the first auxiliary member column is spaced apart from the first connection member column.

Abstract: A method for forming a packaged electronic die includes forming a plurality of bonding pads on a device wafer. A photoresist layer is deposited over the device wafer and is patterned so as to form a photoresist frame that completely surrounds a device formed on the device wafer. Conductive balls are deposited over the bonding pads. The wafer is cut to form the electronic die and the electronic die is placed over the substrate. The conductive balls are heated and compressed, moving the electronic die closer to the substrate such that the photoresist frame is in direct contact with the substrate or with a landing pad formed on the substrate. Encapsulant material is deposited such that the encapsulant material covers the electronic die and the substrate. The encapsulant material is cured so as to encapsulate the electronic die. The substrate is cut to separate the packaged electronic die.

Abstract: A semiconductor package includes a semiconductor chip, a heat radiating member on which the semiconductor chip is mounted, and a sealing member sealing the semiconductor chip. The sealing member is made of a liquid crystal polymer.

Abstract: A semiconductor module is provided, comprising a circuit board having a predetermined circuit pattern, a semiconductor chip placed on the circuit board, a wiring member configured to connect the semiconductor chip and the circuit pattern, and a sealing resin configured to seal the semiconductor chip and the wiring member, wherein the sealing resin has a first resin including an inorganic filler and an epoxy resin, which covers the semiconductor chip and a second resin having a smaller elastic modulus than the first resin, which is provided on a surface of the first resin, and wherein the second resin is separated from the semiconductor chip and the circuit board.

Abstract: An encapsulation material is used to fill a gap between a base member and a semiconductor chip to be bonded onto the base member. The encapsulation material has a reaction start temperature of 160° C. or less. A total content of components volatilized from the encapsulation material when the encapsulation material is heated to at least one temperature falling within a range from 100° C. to 170° C. is 0.5% by mass or less of the entire encapsulation material.