Abstract: The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

Abstract: A method for chemically stabilizing polishing slurries in aqueous suspension to prevent their agglomeration while maintaining their surface activity is disclosed. The method prevents the formation of irreversible particle agglomerates during drying and permits the subsequent re-suspension of dried particles with no impact on the particle size distribution. The stabilization method can be customized based on knowledge of the colloid surface charge at suspension pH conditions, addition of a charged species having like charge to the colloid at the suspension conditions, and control of the concentrations of the charged species and other ions in suspension.

Abstract: A silica sol which has excellent moisture absorption resistance and stability as well as high purity and which does not cause coloring of a solvent or a resin to which the silica sol has been applied. The silica sol contains high-purity silica particles, water and/or a liquid organic medium serving as a dispersion medium, and an organic base compound, the silica particles being dispersed in the dispersion medium, wherein the silica particles satisfy the following requirements (a) to (c): (a) the silica particles have a specific surface area, as determined through a nitrogen absorption method, of 20 to 500 m2/g; (b) the silica particles have a moisture absorption amount per specific surface area thereof of 0.5 mg/m2 or less; and (c) the organic base compound is not substantially contained in the inside thereof.

Abstract: Embodiments relate to a polishing composition for a magnetic disk substrate, where the polishing composition contains colloidal silica, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound has a weight average molecular weight of 20,000 to 10,000,000 and a concentration of 0.0001 to 2.0% by mass.

Abstract: Embodiments provide a polishing composition for a magnetic disc substrate including colloidal silica, a phosphorus-containing compound, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound is a copolymer having a structural unit derived from an unsaturated aliphatic carboxylic acid and a structural unit derived from an unsaturated amide.

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.

Abstract: Provided is a silica-based polishing particle which can polish and flatten the surface of a substrate at a sufficient polishing rate with generation of scratches prevented, and successfully prevents generation of particle residues on a substrate after polishing. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of 1.00 or more and 1.20 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.

Abstract: Provided is a silica-based polishing particle, particularly suitable for primary polishing, which provides a high polishing rate on the surface of a substrate and which prevents particle residues on the substrate after polishing, and an abrasive including the silica-based polishing particle. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of more than 1.20 and 5.00 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Abstract: The invention concerns methods and compositions for modifying a surface of a material by anchoring a surface modifying additive to a polymer matrix using an anchor molecule, wherein the surface modifying additive and the anchor molecule are both added to a melt phase of the polymer matrix.

Abstract: A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

Abstract: Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step.

Abstract: CMP processes, tools and slurries utilize metal oxide-polymer composite particles that include metal oxide particles and a polymer core. The metal oxide particles are modified with a modifying agent and are partially or fully embedded within the polymer core. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.

Abstract: Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.

Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w1 and width w2 at a second larger particle size. The polydispersity formula=(w2?w1)×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.

Abstract: Provided is an abrasive agent for substrates that includes, as an abrasive material component in the abrasive agent, cerium oxide as the main component. The abrasive agent for substrates includes soluble silica and cerium oxide. The concentration ratio of the soluble silica, calculated as Si content, and the cerium oxide in the abrasive agent is 0.001:1 to 0.1:1.

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of ?15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Abstract: Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: Technique to provide an abrasive regeneration method which, from a used abrasive slurry, can recover an abrasive by an efficient method and can thereafter obtain a high-purity regenerated abrasive by a simple method. This abrasive regeneration method uses an abrasive comprising at least one type of abrasive selected from diamond, boron nitride, silicon carbide, alumina, alumina zirconia and zirconium oxide. The abrasive regeneration involves a slurry recovery step (A) for recovering an abrasive slurry discharged from a polishing machine, a separation and concentration step (B) for adding an alkaline earth metal salt as an inorganic salt to the recovered abrasive slurry to aggregate the abrasive, and separating and concentrating the abrasive from a mother liquor, and an abrasive recovery step (C) for recovering the separated and concentrated abrasive.

Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.

Abstract: A rough surface of a starting synthetic quartz glass substrate is polished to a mirror finish, using a polishing slurry containing tetragonal or cubic zirconia.

Abstract: Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(?O)(OH)2) group or carboxyl (—C(?O)OH) group.

Abstract: A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.

Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.

Abstract: A sprayable depilatory composition including a depilatory agent; a surfactant present in the range 0.1% to 5.0% by weight of the composition, wherein the composition has an initial viscosity substantially less than about 7.00 Pas.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Abstract: Embodiments of the disclosure provide a filter structure. A second porous film having a plurality of second holes is disposed on a first porous film having a plurality of first holes. The second holes are smaller than the first holes. The filter structure is dried by an easy and power-saving method such as compression.

Abstract: An advanced reflexive structure system is disclosed. The reflexive system mimics the pain withdrawal reflex on which the human body relies. The reflexive system incorporates a continuous health and performance monitoring system via an embedded dielectric film, an adaptive composite structure based on shape memory composite material, and an intelligence system which will be interfaced with both the health/performance sensors and the adaptive structure. When activated shape memory polymer will recover its structural integrity via shape recovery and a reptation healing process. These features enable the use of SMP as an adaptive structure in the proposed reflexive system. The development of a reflexive system for structures will enable increased safety and security and demonstrate a better understanding of integrated performance systems.

Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Abstract: The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. R1 and R2 represent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. The aqueous floor polishing composition of the present invention does not contain the phosphorus-containing plasticizer. Therefore, it does not affect the environment negatively, in spite of having excellent leveling properties, lustering properties and heel mark resistance properties.

Abstract: A polishing composition for a magnetic disk substrate of the present invention includes water, silica particles, and at least one or more selected from an acid, a salt of the acid, and an oxidizing agent. The silica particles are observed with a transmission electron microscope to measure a maximum diameter and a projected area of each particle, and a value obtained by dividing the area of a circle whose diameter is the maximum diameter of a silica particle by the projected area of the silica particle and multiplying the result by 100, is in the range of 100 to 130.

Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.

Abstract: The present invention relates to nanoparticulate UV protectants which are obtainable by hydrothermal treatment of a nanoparticulate metal oxide and subsequent application of a silicon dioxide coating, and to the preparation and use thereof. The present invention furthermore relates to novel compositions, in particular for topical application, which are intended, in particular, for light protection of the skin and/or of the hair against UV radiation, and to the use thereof in the above-mentioned cosmetic application.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Abstract: Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives.

Abstract: The inventive chemical-mechanical polishing composition comprises a liquid carrier, hydrogen peroxide, benzotriazole, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing composition.

Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 ? reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.

Abstract: The invention provides an aqueous floor coating composition, comprising water, at least one polymer film forming agent, and a plasticizing agent, wherein at least a portion of the plasticizing agent is a synergistic combination of tributoxyethyl phosphate and a benzoate ester blend. Such compositions have reduced phosphorus content, yet retain the leveling and gloss of tributoxyethyl phosphate plasticizers and also exhibit improved soil resistance.

Abstract: This invention is directed to a composition capable of imparting surface effects to a liquid by contacting the liquid with a partially fluorinated phosphate with an ammonium cation (NH2R1R2)+ wherein R1 and R2 are independently linear or branched organic groups containing at least one carboxylate moiety and one amino moiety, and optionally be substituted, interrupted, or both with oxygen, sulfur, or nitrogen-containing moieties, or with cyclic alkyl or aryl moieties containing up to 10 carbon atoms.

Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.