Polishes Patents (Class 106/3)
  • Patent number: 10297461
    Abstract: The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: May 21, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Mitsuhito Takahashi
  • Patent number: 10287457
    Abstract: A method for chemically stabilizing polishing slurries in aqueous suspension to prevent their agglomeration while maintaining their surface activity is disclosed. The method prevents the formation of irreversible particle agglomerates during drying and permits the subsequent re-suspension of dried particles with no impact on the particle size distribution. The stabilization method can be customized based on knowledge of the colloid surface charge at suspension pH conditions, addition of a charged species having like charge to the colloid at the suspension conditions, and control of the concentrations of the charged species and other ions in suspension.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: May 14, 2019
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Rebecca Dylia-Spears, Michael Feit, Phillip E. Miller, William A. Steele, Tayyab I. Suratwala, Lana L. Wong
  • Patent number: 10239758
    Abstract: A silica sol which has excellent moisture absorption resistance and stability as well as high purity and which does not cause coloring of a solvent or a resin to which the silica sol has been applied. The silica sol contains high-purity silica particles, water and/or a liquid organic medium serving as a dispersion medium, and an organic base compound, the silica particles being dispersed in the dispersion medium, wherein the silica particles satisfy the following requirements (a) to (c): (a) the silica particles have a specific surface area, as determined through a nitrogen absorption method, of 20 to 500 m2/g; (b) the silica particles have a moisture absorption amount per specific surface area thereof of 0.5 mg/m2 or less; and (c) the organic base compound is not substantially contained in the inside thereof.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: March 26, 2019
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Keiko Yoshitake, Naohiko Suemura, Megumi Shimada, Ichitaro Kikunaga
  • Patent number: 10233358
    Abstract: Embodiments relate to a polishing composition for a magnetic disk substrate, where the polishing composition contains colloidal silica, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound has a weight average molecular weight of 20,000 to 10,000,000 and a concentration of 0.0001 to 2.0% by mass.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: March 19, 2019
    Assignee: YAMAGUCHI SEIKEN KOGYO CO., LTD.
    Inventor: Junichiro Ando
  • Patent number: 10233357
    Abstract: Embodiments provide a polishing composition for a magnetic disc substrate including colloidal silica, a phosphorus-containing compound, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound is a copolymer having a structural unit derived from an unsaturated aliphatic carboxylic acid and a structural unit derived from an unsaturated amide.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: March 19, 2019
    Assignee: YAMAGUCHI SEIKEN KOGYO CO., LTD.
    Inventor: Junichiro Ando
  • Patent number: 10227506
    Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: March 12, 2019
    Assignee: BASF SE
    Inventors: Max Siebert, Michael Lauter, Yongqing Lan, Robert Reichardt, Alexandra Muench, Manuel Six, Gerald Daniel, Bastian Marten Noller, Kevin Huang, Sheik Ansar Usman Ibrahim
  • Patent number: 10196542
    Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: February 5, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD
    Inventors: Hisataka Minami, Toshiaki Akutsu, Tomohiro Iwano, Koji Fujisaki
  • Patent number: 10190023
    Abstract: Provided is a silica-based polishing particle which can polish and flatten the surface of a substrate at a sufficient polishing rate with generation of scratches prevented, and successfully prevents generation of particle residues on a substrate after polishing. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of 1.00 or more and 1.20 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: January 29, 2019
    Assignee: JGC CATALYSTS AND CHEMICALS LTD.
    Inventors: Mitsuaki Kumazawa, Miki Egami, Hirotada Arakane, Ryo Muraguchi, Toshiharu Hirai
  • Patent number: 10184069
    Abstract: Provided is a silica-based polishing particle, particularly suitable for primary polishing, which provides a high polishing rate on the surface of a substrate and which prevents particle residues on the substrate after polishing, and an abrasive including the silica-based polishing particle. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of more than 1.20 and 5.00 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: January 22, 2019
    Assignee: JGC CATALYSTS AND CHEMICALS LTD.
    Inventors: Mitsuaki Kumazawa, Miki Egami, Hirotada Arakane, Ryo Muraguchi, Toshiharu Hirai
  • Patent number: 10144850
    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: December 4, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Matthias Stender, Maitland Gary Graham
  • Patent number: 10131757
    Abstract: The invention concerns methods and compositions for modifying a surface of a material by anchoring a surface modifying additive to a polymer matrix using an anchor molecule, wherein the surface modifying additive and the anchor molecule are both added to a melt phase of the polymer matrix.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: November 20, 2018
    Assignee: QED Labs, Inc.
    Inventors: Deepak Arabagatte Ramappa, Gangadhar Jogikalmath
  • Patent number: 10008390
    Abstract: A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: June 26, 2018
    Assignee: Toshiba Memory Corporation
    Inventors: Yukiteru Matsui, Kyoichi Suguro, Akifumi Gawase, Takahiko Kawasaki
  • Patent number: 9994739
    Abstract: Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: June 12, 2018
    Assignee: DISCO CORPORATION
    Inventors: Katsuyoshi Kojima, Takeshi Sato
  • Patent number: 9982166
    Abstract: CMP processes, tools and slurries utilize metal oxide-polymer composite particles that include metal oxide particles and a polymer core. The metal oxide particles are modified with a modifying agent and are partially or fully embedded within the polymer core. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: May 29, 2018
    Assignee: Cabot Corporation
    Inventors: Brian G. Prevo, Mark J. Hampden-Smith, Dmitry Fomitchev, Yakov E. Kutsovsky
  • Patent number: 9879156
    Abstract: Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: January 30, 2018
    Assignee: FUJIMI INCORPORATED
    Inventors: Jun Ito, Kazutoshi Hotta, Hiroyasu Sugiyama, Hitoshi Morinaga
  • Patent number: 9878420
    Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w1 and width w2 at a second larger particle size. The polydispersity formula=(w2?w1)×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: January 30, 2018
    Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.
    Inventors: Rajiv K. Singh, Kannan Balasundaram, Arul Chakkaravarthi Arjunan, Deepika Singh, Wei Bai
  • Patent number: 9868886
    Abstract: Provided is an abrasive agent for substrates that includes, as an abrasive material component in the abrasive agent, cerium oxide as the main component. The abrasive agent for substrates includes soluble silica and cerium oxide. The concentration ratio of the soluble silica, calculated as Si content, and the cerium oxide in the abrasive agent is 0.001:1 to 0.1:1.
    Type: Grant
    Filed: December 14, 2012
    Date of Patent: January 16, 2018
    Assignee: KONICA MINOLTA, INC.
    Inventor: Hazuki Nakae
  • Patent number: 9862862
    Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of ?15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: January 9, 2018
    Assignee: BASF SE
    Inventors: Yongqing Lan, Peter Przybylski, Zhenyu Bao, Julian Proelss
  • Patent number: 9845538
    Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.
    Type: Grant
    Filed: July 3, 2014
    Date of Patent: December 19, 2017
    Assignee: WAKO PURE CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Yokomizo, Hiroyuki Tsurumoto, Masahiko Kakizawa
  • Patent number: 9837283
    Abstract: Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: December 5, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Shuugo Yokota, Koichi Sakabe
  • Patent number: 9796882
    Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: October 24, 2017
    Assignee: Cabot Microelectronics Corporation
    Inventors: Alexander W. Hains, Tina Li
  • Patent number: 9783702
    Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: October 10, 2017
    Assignee: Rohm and Haas Electronic Materials CMP Holdings Inc.
    Inventors: Yi Guo, David Mosley, Matthew Van Hanehem
  • Patent number: 9708508
    Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: July 18, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Graham M. Bates, Michael T. Brigham, Joseph K. Comeau, Jason P. Ritter, Matthew T. Tiersch, Eva A. Shah, Eric J. White
  • Patent number: 9701878
    Abstract: Technique to provide an abrasive regeneration method which, from a used abrasive slurry, can recover an abrasive by an efficient method and can thereafter obtain a high-purity regenerated abrasive by a simple method. This abrasive regeneration method uses an abrasive comprising at least one type of abrasive selected from diamond, boron nitride, silicon carbide, alumina, alumina zirconia and zirconium oxide. The abrasive regeneration involves a slurry recovery step (A) for recovering an abrasive slurry discharged from a polishing machine, a separation and concentration step (B) for adding an alkaline earth metal salt as an inorganic salt to the recovered abrasive slurry to aggregate the abrasive, and separating and concentrating the abrasive from a mother liquor, and an abrasive recovery step (C) for recovering the separated and concentrated abrasive.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: July 11, 2017
    Assignee: KONICA MINOLTA, INC.
    Inventors: Yuuki Nagai, Akihiro Maezawa, Atsushi Takahashi
  • Patent number: 9663683
    Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: May 30, 2017
    Assignee: S. C. Johnson & Son, Inc.
    Inventors: Thomas E. Polzin, Rahul Saxena, Lynn M. Werkowski
  • Patent number: 9616542
    Abstract: A rough surface of a starting synthetic quartz glass substrate is polished to a mirror finish, using a polishing slurry containing tetragonal or cubic zirconia.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: April 11, 2017
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryouhei Hasegawa, Harunobu Matsui, Daijitsu Harada, Masaki Takeuchi
  • Patent number: 9576818
    Abstract: Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(?O)(OH)2) group or carboxyl (—C(?O)OH) group.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 21, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Anne Miller, Jimmy Granstrom
  • Patent number: 9559021
    Abstract: A wafer polishing process includes polishing a central area on the back side of a wafer, polishing a peripheral area on the back side of the wafer, buffing the central area, and buffing the peripheral area. The process can significantly reduce scratch-related wafer breakage, can correct focus spots on wafers, and can replace cleaning processes that use chemical etchants. Polishing and buffing can include polishing and buffing the bevel region. Further improvements include polishing with abrasive pads having a soft backing, polishing or buffing with pads having relatively soft abrasive particles, polishing or buffing with abrasive pads made from abrasive particles that have been sorted and selected for regularity of shape, irrigating the surface being polished or buffed with an aqueous solution that includes a friction-reducing agent, and buffing with abrasive pads having 20k or finer grit or non-abrasive pads.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: January 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shen-Nan Lee, Teng-Chun Tsai, Hsin-Hsien Lu, Chang-Sheng Lin, Kuo-Cheng Lien, Kuo-Yin Lin, Wen-Kuei Liu, Yu-Wei Chou
  • Patent number: 9493677
    Abstract: Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: November 15, 2016
    Assignees: SK HYNIX INC., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Dae Soon Lim, Il Ho Yang, Seung Koo Lee, Dong Hee Shin, Dong Hyeon Lee, Yang Bok Lee
  • Patent number: 9422454
    Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: August 23, 2016
    Assignee: FUJIMI INCORPORATED
    Inventors: Yasuyuki Yamato, Tomohiko Akatsuka
  • Patent number: 9358196
    Abstract: A sprayable depilatory composition including a depilatory agent; a surfactant present in the range 0.1% to 5.0% by weight of the composition, wherein the composition has an initial viscosity substantially less than about 7.00 Pas.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: June 7, 2016
    Assignee: RECKITT BENCKISER (UK) LIMITED
    Inventor: Lee Cawthorne
  • Patent number: 9334573
    Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.
    Type: Grant
    Filed: January 16, 2013
    Date of Patent: May 10, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Tomoko Higashiuchi, Nobuaki Takane, Masashi Yamaura, Maki Inada, Hiroshi Yokota, Kazuyuki Kamo
  • Patent number: 9309442
    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 12, 2016
    Assignee: Cabot Microelectronics Corporation
    Inventors: Lin Fu, Jeffrey Dysard, Steven Grumbine
  • Patent number: 9254455
    Abstract: Embodiments of the disclosure provide a filter structure. A second porous film having a plurality of second holes is disposed on a first porous film having a plurality of first holes. The second holes are smaller than the first holes. The filter structure is dried by an easy and power-saving method such as compression.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: February 9, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Der Bai, Te-Chang Lan, Kuo-Ti Chen, Hom-Ti Lee, Yun-Huin Lin
  • Patent number: 9180632
    Abstract: An advanced reflexive structure system is disclosed. The reflexive system mimics the pain withdrawal reflex on which the human body relies. The reflexive system incorporates a continuous health and performance monitoring system via an embedded dielectric film, an adaptive composite structure based on shape memory composite material, and an intelligence system which will be interfaced with both the health/performance sensors and the adaptive structure. When activated shape memory polymer will recover its structural integrity via shape recovery and a reptation healing process. These features enable the use of SMP as an adaptive structure in the proposed reflexive system. The development of a reflexive system for structures will enable increased safety and security and demonstrate a better understanding of integrated performance systems.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: November 10, 2015
    Assignee: Cornerstone Research Group, Inc.
    Inventors: Christopher Douglas Hemmelgarn, Thomas Wood Margraf, David Ernest Havens, John Lewis Reed, Logan Wayne Snyder, Anthony Louderbough, Benjamin Allen Dietsch
  • Patent number: 9022834
    Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: May 5, 2015
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Eiichi Satou, Munehiro Oota, Kanshi Chinone, Shigeru Nobe, Kazuhiro Enomoto, Tadahiro Kimura, Masato Fukasawa, Masanobu Habiro, Yousuke Hoshi
  • Patent number: 8911541
    Abstract: The present invention is the aqueous floor polishing composition which contains the polyoxyalkylene diester compound represented by the following general formula (1) and does not contain the phosphorus-containing plasticizer. R1 and R2 represent each independently alkyl groups having 1 to 24 carbon atoms, m represents an integer from 2 to 4, n represents a number from 2 to 40. The aqueous floor polishing composition of the present invention does not contain the phosphorus-containing plasticizer. Therefore, it does not affect the environment negatively, in spite of having excellent leveling properties, lustering properties and heel mark resistance properties.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: December 16, 2014
    Assignee: Adeka Corporation
    Inventors: Yuji Yamazaki, Masashi Harada
  • Patent number: 8834589
    Abstract: A polishing composition for a magnetic disk substrate of the present invention includes water, silica particles, and at least one or more selected from an acid, a salt of the acid, and an oxidizing agent. The silica particles are observed with a transmission electron microscope to measure a maximum diameter and a projected area of each particle, and a value obtained by dividing the area of a circle whose diameter is the maximum diameter of a silica particle by the projected area of the silica particle and multiplying the result by 100, is in the range of 100 to 130.
    Type: Grant
    Filed: April 26, 2007
    Date of Patent: September 16, 2014
    Assignee: Kao Corporation
    Inventors: Yoshiaki Oshima, Norihito Yamaguchi, Haruhiko Doi
  • Patent number: 8821215
    Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: September 2, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventor: Nevin Naguib Sant
  • Patent number: 8758501
    Abstract: The present invention relates to nanoparticulate UV protectants which are obtainable by hydrothermal treatment of a nanoparticulate metal oxide and subsequent application of a silicon dioxide coating, and to the preparation and use thereof. The present invention furthermore relates to novel compositions, in particular for topical application, which are intended, in particular, for light protection of the skin and/or of the hair against UV radiation, and to the use thereof in the above-mentioned cosmetic application.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: June 24, 2014
    Assignees: Merck Patent GmbH, Sachtleben Chemie GmbH
    Inventors: Frank Pfluecker, Bernd Hirthe, Heike Saenger, Stephan John
  • Patent number: 8741009
    Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: June 3, 2014
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jeffrey M. Dysard, Paul M. Feeney, Sriram P. Anjur, Timothy P. Johns, Yun-Biao Xin, Li Wang
  • Publication number: 20140073707
    Abstract: Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 13, 2014
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Thomas G. Calvarese, Weiming Qiu, Anilkumar Raghavanpillai, Yamaira Gonzalez
  • Patent number: 8591763
    Abstract: The inventive chemical-mechanical polishing composition comprises a liquid carrier, hydrogen peroxide, benzotriazole, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing composition.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: November 26, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventor: Shoutian Li
  • Patent number: 8563769
    Abstract: A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t—??(2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: October 22, 2013
    Assignee: AGC Seimi Chemical Co., Ltd.
    Inventors: Katsuyuki Tsugita, Masato Mitsuhashi
  • Patent number: 8529680
    Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: September 10, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Francesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
  • Patent number: 8506661
    Abstract: A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 ? reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: August 13, 2013
    Assignee: Air Products & Chemicals, Inc.
    Inventors: Rebecca A. Sawayda, Bentley J. Palmer
  • Patent number: 8440751
    Abstract: The invention provides an aqueous floor coating composition, comprising water, at least one polymer film forming agent, and a plasticizing agent, wherein at least a portion of the plasticizing agent is a synergistic combination of tributoxyethyl phosphate and a benzoate ester blend. Such compositions have reduced phosphorus content, yet retain the leveling and gloss of tributoxyethyl phosphate plasticizers and also exhibit improved soil resistance.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: May 14, 2013
    Assignee: Ecolab USA Inc.
    Inventors: Timothy John Kohnke, Dale Curtis Larson, III, Robert D. P. Hei, Minyu Li, Catherine Hanson
  • Publication number: 20130112908
    Abstract: This invention is directed to a composition capable of imparting surface effects to a liquid by contacting the liquid with a partially fluorinated phosphate with an ammonium cation (NH2R1R2)+ wherein R1 and R2 are independently linear or branched organic groups containing at least one carboxylate moiety and one amino moiety, and optionally be substituted, interrupted, or both with oxygen, sulfur, or nitrogen-containing moieties, or with cyclic alkyl or aryl moieties containing up to 10 carbon atoms.
    Type: Application
    Filed: February 20, 2012
    Publication date: May 9, 2013
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Sheng PENG, Allison Mary YAKE, Xianjun MENG
  • Publication number: 20130109794
    Abstract: An optionally VOC-free silicone containing furniture polish is prepared using one or both of 1) a low viscosity silicone fluid and 2) a polydiorganosiloxane; and 3) a phosphonic acid dispersant together with water and one or more suitable surfactants.
    Type: Application
    Filed: October 31, 2011
    Publication date: May 2, 2013
    Inventors: Thomas E. Polzin, Rahul Saxena, Lynn M. Werkowski
  • Patent number: 8425276
    Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: April 23, 2013
    Assignee: Showa Denko K.K.
    Inventors: Takashi Sato, Hiroshi Takahashi, Yoshitomo Shimazu, Yuji Itoh