Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

Abstract: A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Abstract: To provide a polishing composition suitable for the use of polishing a polishing object having a film containing a silicon material having a silicon-silicon bond formed on a pattern containing an insulating film by a CMP method to form circuit patterns containing the silicon material and capable of also suppressing a remarkable reduction in polishing removal rate. A polishing composition of this invention contains abrasives, a first water-soluble polymer containing a polymer compound containing a lactam ring and having a weight average molecular weight of less than 300,000, a second water-soluble polymer containing a polymer compound containing a lactam ring and having a weight average molecular weight smaller than that of the first water-soluble polymer, a basic compound, and water.

Abstract: A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.

Abstract: In one aspect, the present disclosure provides a method for producing an aluminum platter, which can improve the smoothness of the substrate surface before a magnetic layer is formed thereon and can provide a hard disk substrate that can be processed into a medium with a high yield. In another aspect, the present disclosure relates to a method for producing an aluminum platter, including the following steps 1 and 2: step 1: bringing a composition containing a compound (component A) that has at least one structure represented by the following formula (I) and has a molecular weight between 50 and 100,000 inclusive into contact with a substrate surface of a Ni—P plated aluminum alloy substrate; and step 2: forming a magnetic layer on the substrate obtained in the step 1.

Abstract: The disclosure relates to nail varnish compositions including, in one or more cosmetically acceptable organic solvents: a main film-forming agent including nitrocellulose, at least one fumed silica having a BET specific surface area of at least 170 m2/g, at least one secondary resin having at least one aromatic group in its chemical structure, at least one plasticiser, at least one colorant, which is insoluble in the solvent. The composition is free or substantially free of clay compounds, especially of modified clays, in particular of organophilic clays. The disclosure also relates to the use of these compositions for protecting and/or making up the nails, and also to packaged, ready-to-use items intended for this use.

Abstract: A polishing liquid is provided containing manganese oxide abrasive grains, permanganate ions, and a cellulosic surfactant or a cationic surfactant. The polishing liquid has a pH of 5 or more and 11 or less. The cellulosic surfactant is preferably a carboxymethyl cellulose or a derivative thereof. The cationic surfactant preferably has a quaternary ammonium ion site. The content of the cellulosic surfactant or the cationic surfactant is preferably 0.01 mass % or more and 1.0 mass % or less based on the total amount of the polishing liquid.

Abstract: The present invention provides a polishing composition with which polishing rates can be effectively improved and which is for polishing works to be polished. The polishing composition comprises water, abrasive grains, an oxidant, and a polishing accelerator. The polishing accelerator comprises at least one metal salt selected from the group consisting of alkali metal salts and alkaline-earth metal salts.

Abstract: Methods of preparing an electrochemically active material can include providing electrochemically active particles, coating the particles with a binder, and exposing the particles to a source of metal. The methods can also include forming metal salt on the surface of the particles from the source of metal and heating the metal salt to form metal oxide coated particles.

Abstract: A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract: A method for manufacturing a semiconductor structure or a photonic device, wherein the method comprises the steps of: providing a silicon nitride patterned layer over a carrier substrate; providing a first layer of a conformal oxide on the silicon nitride patterned layer such that it fully covers the silicon nitride patterned layer; and planarizing the first layer of conformal oxide to a predetermined thickness above the silicon nitride patterned layer to form a planarizing oxide layer. After the step of planarizing the first layer of conformal oxide, the method further comprises steps of clearing the silicon nitride patterned layer to form a dished silicon nitride patterned layer with a dishing height; and subsequently providing a second layer of a conformal oxide on or over the dished silicon nitride layer.

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Abstract: Methods of producing high purity powders of submicron particles of metal oxides are presented. The methods comprise providing or forming an alloy of a first metal with a second metal, optionally heating the alloy, subjecting the alloy to a leaching agent to remove the second metal from the alloy and to oxidize the first metal, thus forming submicron oxide particles of the first metal. Collections of high purity, high surface area, submicron particles are presented as well.

Abstract: A fabric treatment composition is provided that includes at least one zeta potential modifier, a fluoropolymer and a hydrophobic agent with a melting point or glass transition temperature below 100° C., for imparting fabric protection benefits to a fabric, such as improved stain and soil resistance, oil repellency, water repellency, softness, wrinkle and damage resistance, and better hand feel. Fabric treatment compositions can be used as a pretreatment prior to washing, through soaking, or added to the treatment liquor, that is either the wash or rinse cycle of an automatic washing machine, to first provide and then maintain and refresh the fabric protection benefits imparted to the fabric. Following use of a first treatment composition, protective benefits are maintained and refreshed by means of a second treatment operation employing a second treatment composition.

Abstract: The present invention concerns a process for the production of metal doped cerium compositions comprising a cerium oxide and a metal oxide by precipitation. The invention also concerns metal doped cerium compositions providing high crystallites size and exhibiting high thermal stabilities, which may be used as a catalytic support or for polishing applications.

Abstract: A composition is provided that includes a universal hydrophobic active ingredient of modified silicone polymer forming a microemulsion in water, and a water miscible organic solvent to produce a clear and transparent solution that cleans and leaves a hydrophobic film on a glass substrate when dried. A process of applying the same is also provided.

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Abstract: A subject of this invention is to provide a dispersion liquid of a silica-based composite particle, which can rapidly polish silica film, Si wafer or even hard-to-process material, can concurrently achieve high surface accuracy (less scratches, etc.), and can suitably be used for surface polishing of semiconductor devices including semiconductor substrate and wiring board, by virtue of its impurity-free nature. The subject is solved by a dispersion liquid of a silica-based composite particle that contains a silica-based composite particle that has a core particle mainly composed of amorphous silica, and bound thereto a ceria particle mainly composed of crystalline ceria, further has a silica film that covers them.

Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.

Abstract: Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m2/g or more and 50 m2/g or less and an average secondary particle diameter of 0.05 ?m or more and 4.8 ?m or less. This polishing composition can be used for polishing an outer surface of the resin coating.

Abstract: Described herein are polishing compositions containing an abrasive and a buffering material, wherein the pH of the polishing composition is about 6 to about 9, and methods of preparing and using the same.

Abstract: The present invention provides non-calcined cementitious compositions comprising micron inorganic particles, which can be used as a binder material; and provides non-calcined concrete compositions; non-calcined concretes are also provided, which exhibit similar or better physical and mechanical properties than those prepared with traditional cements do. The present invention also provides the preparation methods of the non-calcined cementitious compositions, the non-calcined concrete compositions and the non-calcined concretes.

Abstract: A gas turbine engine includes a plurality of circumferentially-spaced blades. The blades have a polymeric coating thereon. An abradable seal circumscribes the blades and includes a polymeric matrix with a dispersion of a nanolayer material.

Abstract: The present invention provides a slurry composition and method for polishing organic polymer-based ophthalmic substrates. The slurry composition according to the invention includes an aqueous dispersion of abrasive particles and one of a polyvinyl alcohol compound, and a tertiary amide functionalized compound. The abrasive particles can be alumina, zirconia, silica, titania, ceria, spinel or combinations of the foregoing.

Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one metal corrosion inhibitor; 4) at least one organic solvent; 5) at least one amidine base; and 6) water.

Abstract: The present invention discloses a preparation method of an alumina supported cerium oxide powder material. A cerium organometallic precursor is effectively decomposed into CeO2 nanoparticles at 500-700° C. in an oxygen atmosphere condition by using a chemical vapor deposition method, and the CeO2 nanoparticles are evenly dispersed on an Al2O3 support. The decomposition of the CeO2 precursor is accelerated by changing experimental parameters of reaction between organic materials and oxygen, so as to control the size and microstructure of powder, thereby achieving the preparation and even dispersion of cerium oxide nanoparticles, and avoiding the problem of generation of toxic waste liquor during reaction. The method of the present invention is simple, has a short preparation period, and the cerium oxide nanoparticles prepared are evenly dispersed, can be used as catalytic materials and functional materials, and have a broad application prospect in multiple fields.

Abstract: The present invention provides a CMP polishing agent containing polishing particles, a protective agent, and water, wherein the protective agent is a silsesquioxane polymer having a polar group. This provides a CMP polishing agent which can reduce polishing scratches produced due to polishing in a CMP process and has high polishing selectivity.

Abstract: A method for chemically stabilizing polishing slurries in aqueous suspension to prevent their agglomeration while maintaining their surface activity is disclosed. The method prevents the formation of irreversible particle agglomerates during drying and permits the subsequent re-suspension of dried particles with no impact on the particle size distribution. The stabilization method can be customized based on knowledge of the colloid surface charge at suspension pH conditions, addition of a charged species having like charge to the colloid at the suspension conditions, and control of the concentrations of the charged species and other ions in suspension.

Abstract: A silica sol which has excellent moisture absorption resistance and stability as well as high purity and which does not cause coloring of a solvent or a resin to which the silica sol has been applied. The silica sol contains high-purity silica particles, water and/or a liquid organic medium serving as a dispersion medium, and an organic base compound, the silica particles being dispersed in the dispersion medium, wherein the silica particles satisfy the following requirements (a) to (c): (a) the silica particles have a specific surface area, as determined through a nitrogen absorption method, of 20 to 500 m2/g; (b) the silica particles have a moisture absorption amount per specific surface area thereof of 0.5 mg/m2 or less; and (c) the organic base compound is not substantially contained in the inside thereof.

Abstract: Embodiments relate to a polishing composition for a magnetic disk substrate, where the polishing composition contains colloidal silica, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound has a weight average molecular weight of 20,000 to 10,000,000 and a concentration of 0.0001 to 2.0% by mass.

Abstract: Embodiments provide a polishing composition for a magnetic disc substrate including colloidal silica, a phosphorus-containing compound, a water-soluble polymer compound, and water. According to at least one embodiment, the water-soluble polymer compound is a copolymer having a structural unit derived from an unsaturated aliphatic carboxylic acid and a structural unit derived from an unsaturated amide.

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

Abstract: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.

Abstract: Provided is a silica-based polishing particle which can polish and flatten the surface of a substrate at a sufficient polishing rate with generation of scratches prevented, and successfully prevents generation of particle residues on a substrate after polishing. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of 1.00 or more and 1.20 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.

Abstract: Provided is a silica-based polishing particle, particularly suitable for primary polishing, which provides a high polishing rate on the surface of a substrate and which prevents particle residues on the substrate after polishing, and an abrasive including the silica-based polishing particle. A silica-based polishing particle with a three-dimensional polycondensation structure containing an alkoxy group, wherein the particle has an average particle diameter (d) of 5 to 300 nm, an aspect ratio of more than 1.20 and 5.00 or less, and a carbon content of 0.005% by mass or more and less than 0.50% by mass.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

Abstract: The invention concerns methods and compositions for modifying a surface of a material by anchoring a surface modifying additive to a polymer matrix using an anchor molecule, wherein the surface modifying additive and the anchor molecule are both added to a melt phase of the polymer matrix.

Abstract: A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

Abstract: Provided is a polishing liquid which contains a permanganate, a pH adjustor, and water and which is used for polishing of a SiC substrate. Also provided is a method of polishing a SiC substrate, the method including: a first polishing step of polishing the SiC substrate by use of a first polishing liquid containing a permanganate, inorganic salts having an oxidizing ability, and water; and a second polishing step of performing finishing polishing of the SiC substrate by use of a second polishing liquid containing a permanganate, a pH adjustor, and water after the first polishing step.

Abstract: CMP processes, tools and slurries utilize metal oxide-polymer composite particles that include metal oxide particles and a polymer core. The metal oxide particles are modified with a modifying agent and are partially or fully embedded within the polymer core. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.

Abstract: Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.

Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w1 and width w2 at a second larger particle size. The polydispersity formula=(w2?w1)×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.

Abstract: Provided is an abrasive agent for substrates that includes, as an abrasive material component in the abrasive agent, cerium oxide as the main component. The abrasive agent for substrates includes soluble silica and cerium oxide. The concentration ratio of the soluble silica, calculated as Si content, and the cerium oxide in the abrasive agent is 0.001:1 to 0.1:1.

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of ?15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Abstract: Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.