Abstract: A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200° C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Abstract: Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 ?m/hr or greater, for example, about 40 ?m/hr, about 50 ?m/hr, about 55 ?m/hr, about 60 ?m/hr, about 70 ?m/hr, about 80 ?m/hr, and about 90-120 ?m/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Abstract: A SiC epitaxial growth apparatus according to an embodiment includes a mounting stand on which a SiC wafer is mounted, and a furnace body which is configured to cover the mounting stand, and the furnace body includes a raw material gas supply port which is positioned so as to face the mounting stand and is configured to supply a raw material gas to the growth space, a first purge gas supply port which surrounds a vicinity of the raw material gas supply port and is configured to supply a purge gas to the growth space, and a second purge gas supply port which surrounds a vicinity of the first purge gas supply port and is configured to supply a purge gas to the growth space.

Abstract: A vapor phase epitaxy method including: providing a III-V substrate of a first conductivity type, introducing the III-V substrate into a reaction chamber of a vapor phase epitaxy system at a loading temperature, heating the III-V substrate from the loading temperature to an epitaxy temperature while introducing an initial gas flow, depositing a III-V layer with a dopant concentration of a dopant of the first conductivity type on a surface of the III-V substrate from the vapor phase from an epitaxial gas flow, fed into the reaction chamber and comprising the carrier gas, the first precursor, and at least one second precursor for an element of main group III, wherein during the heating from the loading temperature to the epitaxy temperature, a third precursor for a dopant of the first conductivity type is added to the initial gas flow.

Abstract: Systems and methods for supplying a precursor material for an atomic layer deposition (ALD) process are provided. A gas supply provides one or more precursor materials to a deposition chamber. The deposition chamber receives the one or more precursor materials via an input line. A gas circulation system is coupled to an output line of the deposition chamber. The gas circulation system includes a gas composition detection system configured to produce an output signal indicating a composition of a gas exiting the deposition chamber through the output line. The gas circulation system also includes a circulation line configured to transport the gas exiting the deposition chamber to the input line. A controller is coupled to the gas supply. The controller controls the providing of the one or more precursor materials by the gas supply based on the output signal of the gas composition detection system.

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Abstract: The instant disclosure discloses method comprising receiving a substrate; disposing a dielectric layer over the substrate; disposing a metallic material on the dielectric layer; disposing a passivation layer on top surface of the metallic material; and performing an alloy layer formation process to dispose a SiGe layer across top surface of the passivation layer.

Abstract: Coated semiconductor wafers are produced by introducing a process gas through first gas inlet openings along a first flow direction into a reactor chamber and over a substrate wafer of semiconductor material lying on a susceptor in order to deposit a layer on the substrate wafer, whereby material derived from the process gas precipitates on a preheat ring arranged around the susceptor; extracting the coated substrate wafer from the reactor chamber; and subsequently removing material precipitate from the preheat ring by introducing an etching gas through the first gas inlet openings into the reactor chamber along the first flow direction over the preheat ring and also through second gas inlet openings between which the first gas inlet openings are arranged, along further flow directions which intersect with the first flow direction.

Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.

Abstract: The present invention provides a metal nitride platform for semiconductor devices, including, a pre-defined array of catalyst sites, disposed on a substrate. Metal nitride islands with lateral to vertical size ratios of at least greater than one (1) are disposed on the array of catalyst sites, where the surfaces of the metal nitride islands are with reduced dislocation densities and side walls with bending of dislocations. The platform of metal nitride islands is further used to build electrically and optically-active devices. The present invention also provides a process for the preparation of a metal nitride platform, selectively, on the array of catalyst sites, in the presence of a reactive gas and precursors and under preferred reaction conditions, to grow metal nitride islands with lateral to vertical size ratios of at least greater than one (1).

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.

Abstract: This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

Abstract: An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.

Abstract: A method for atomic layer deposition of high temperature materials from single source precursors includes placing a substrate in a reaction zone in gas isolation from other reaction zones and contacting the substrate in the reaction zone with a reactant to allow atoms in the reactant to combine with reaction sites on the substrate to form a layer of the reactant on the substrate. The substrate is then placed in a purge zone and purged with a flowing inert gas. The substrate is then placed in a final reaction zone in gas isolation from the other zones wherein the final reaction zone has an atmosphere and temperature to decompose adsorbed reactant and/or form desired phases with crystallinity to form a layer of material. The substrate is then placed in a purge zone and the process is repeated until a layer of material of desired thickness is formed on the substrate.

Abstract: A source of material for use in a deposition system includes one or more baffles or equivalent structures within the source. The baffles provide for increased concentration of material entrained in a carrier gas that is passed through and emitted by the source.

Abstract: A method of providing a coating on a conductor. The coating has a first layer containing palladium and a second layer containing gold from the conductor side. The first layer has an inner layer on the conductor side and an outer layer arranged nearer to the second layer than the inner layer, and the outer layer has a higher phosphorus concentration than the inner layer.

Abstract: A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

Abstract: A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, in which the crystal material is a single crystal of GaN, and the polishing liquid is an oxidizing polishing liquid having an oxidation-reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH between 0.1 and 6.5: Ehmin (mV)=?33.9 pH+750 . . . (1) Ehmax (mV)=?82.1 pH+1491 . . . (2).

Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. The methods include performing multi-stage inhibition treatments including intervals between stages. One or more of plasma source power, substrate bias power, or treatment gas flow may be reduced or turned off during an interval. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate and wordline fill, and 3-D integration using through-silicon vias.

Abstract: Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, an indexed jet injector may include a body having a substantially cylindrical central volume, a gas input port disposed on a first surface of the body, a gas distribution channel formed in the body and fluidly coupled to the gas input port and to the cylindrical central volume, a gas distribution drum disposed within the cylindrical central volume and rotatably coupled to the body, the gas distribution drum having a plurality of jet channels formed through the gas distribution drum, and a plurality of indexer output ports formed on a second surface of the body, wherein each of the plurality of jet channels fluidly couple the gas input port to at least one of the plurality of indexer output ports at least once per 360° rotation of the gas distribution drum.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.

Abstract: A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor.

Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

Abstract: A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene includes forming a vacuum chamber comprising a conduit and a process chamber. A gas is introduced into the vacuum chamber. An RF electromagnetic field is applied to a magnetic core to form a toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that the toroidal plasma loop discharge generates atomic hydrogen.

Abstract: Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 ?m/hr or greater, for example, about 40 ?m/hr, about 50 ?m/hr, about 55 ?m/hr, about 60 ?m/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

Abstract: A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.

Abstract: A processing apparatus includes a plurality of first gas supply channels configured to supply a plurality of gases to the process chamber, a second gas supply channel configured to supply a gas to the process chamber, the gas being used in processing the target substrate, a plurality of first valves configured to open and close the plurality of first gas supply channels, a second valve configured to open and close the second gas supply channel, and a controller. One of the plurality of first valves is a follow-up target valve. The controller controls opening/closing operation of the plurality of first valves such that opening durations of the plurality of first valves do not overlap with each other, and controls opening/closing operation of the second valve such that opening duration of the second valve has a predetermined time relationship with opening duration of the follow-up target valve.

Abstract: Methods of depositing Co-containing layers on substrates are disclosed. The vapor of a Co-containing film forming composition is introduced into a reactor having a substrate disposed therein. The Co-containing film forming compositions comprise a silylamide-containing precursor selected from Co[N(SiMe3)2]2(NMe2Et), Co[N(SiMe3)2]2(NMeEt2), or combinations thereof. At least part of the silylamide-containing precursor is deposited onto the substrate to form the Co-containing layer using a vapor deposition method.

Abstract: A heating apparatus includes a gas supply for providing a base gas, a generator configured to excite the base gas to produce a metastable gas mixture that includes a metastable gas, and a housing. The housing includes a wall shaped to contain the metastable gas mixture and selectively enclose a reactive element of a target component. Interaction between the metastable gas and at least one of a coupling material and the reactive element transfers energy to selectively heat the at least one of the coupling material and the target component.

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1<T2<T3. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

Abstract: A method for atomic layer deposition includes providing a substrate in a reaction chamber; and performing at least one atomic layer deposition cycle to form a film on a surface of the substrate. The atomic layer deposition cycle includes passing first precursors into the reaction chamber to let first atoms included in the first precursors combine with reaction sites of the substrate; and passing second precursors into the reaction chamber to let second atoms included in the second precursors combine with the reaction sites uncombined with the first atoms or substitute at least part of the first atoms to combine with the reaction sites of the substrate. The above-mentioned method for atomic layer deposition is capable of preparing large area and uniformity of doping film without annealing process or with low temperature annealing process.

Abstract: A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1?d2|/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 ?m and a plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 1.9×10?3, and the main surface has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Abstract: Method and apparatus for characterizing metal oxide reduction using metal oxide films formed in an anneal chamber are disclosed. Oxygen is provided into an anneal chamber. A substrate including a metal seed layer is exposed to the oxygen and exposed to a heated substrate support in the anneal chamber to form a metal oxide of the metal seed layer. The oxidized substrate can be stored for later use or transferred to a processing chamber for reducing the metal oxide to metal. The oxidized substrates formed in this manner provide metal oxides that are repeatable, uniform, and stable. The oxidized substrate is exposed to a reducing treatment under conditions that reduce the metal oxide to metal in the form of a film integrated with the metal seed layer.

Abstract: A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co2(CO)6(R1C?CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt(II) complex comprising nitrogen-based supporting ligands.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: An epitaxial growth method for preventing auto-doping effect is presented. This method starts with the removal of impurities from the semiconductor substrate and the reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region.

Abstract: A plasma chamber for activating a process gas, including at least four legs forming a toroidal plasma channel, each leg having a cross-sectional area, and an outlet formed on one leg, the outlet having a greater cross-sectional area than the cross-sectional area of the other legs. The plasma chamber further includes an inlet for receiving the process gas and a plenum for introducing the process gas over a broad area of the leg opposing the outlet to reduce localized high plasma impedance and gas flow instability, wherein the leg opposing the outlet defines a plurality of holes for providing a helical gas rotation in the plasma channel.

Abstract: A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

Abstract: Structures for transitioning between two layers of differing lattice parameters are disclosed. In some embodiments, the structures are in the form of a superlattice that serves as a strain relieving transition between two layers of differing lattice parameters. By controlling the properties of the superlattice, the superlattice can exhibit desirable properties such as transparency to light and lattice matching to one of the two layers of differing lattice parameters. Optoelectronic devices such as light emitting diodes including such superlattices are also disclosed.

Abstract: Non-polar (11 20) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1 102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (11 20) a-plane GaN thin films.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.

Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.

Abstract: Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.