Using An Energy Beam Or Field, A Particle Beam Or Field, Or A Plasma (e.g., Ionization, Pecvd, Cbe, Mombe, Rf Induction, Laser) Patents (Class 117/103)
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Patent number: 7837792Abstract: In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps of: forming an amorphous silicon film on a substrate having an insulating surface; patterning the amorphous silicon film to form a predetermined pattern; holding a metal element that accelerates the crystallization of silicon in such a manner that the metal element is brought into contact with the amorphous silicon film; performing a heating process to crystalize the amorphous silicon film, thereby being converted into a crystalline silicon film; and etching a peripheral portion of the pattern of the crystalline silicon film.Type: GrantFiled: September 22, 2004Date of Patent: November 23, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hisashi Ohtani, Akiharu Miyanaga, Satoshi Teramoto, Shunpei Yamazaki
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Patent number: 7820246Abstract: The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in ?c face.Type: GrantFiled: June 15, 2004Date of Patent: October 26, 2010Assignee: Japan Science and Technology AgencyInventors: Masatomo Sumiya, Shunro Fuke
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Patent number: 7820244Abstract: In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.Type: GrantFiled: October 31, 2006Date of Patent: October 26, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Hun Seo, Jin-Gi Hong, Yun-Ho Choi, Hyun-Chul Kwun, Eun-Taeck Lee, Jin-Ho Kim
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Publication number: 20100229789Abstract: A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.Type: ApplicationFiled: March 15, 2010Publication date: September 16, 2010Applicant: Waseda UniversityInventors: Noboru Ichinose, Kiyoshi Shimamura, Kazuo Aoki
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Patent number: 7776154Abstract: The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.Type: GrantFiled: August 1, 2007Date of Patent: August 17, 2010Assignee: Picogiga International SASInventors: Fabrice Semond, Jean Claude Massies, Nicolas Pierre Grandjean
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Patent number: 7776152Abstract: Apparatus and method for growing and observing the growth of epitaxial layers on a wafer. The apparatus includes: epitaxial growth apparatus; a source of light mounted to illuminate an entire surface of the wafer in the apparatus during growth of the epitaxial layer on the entire surface of the wafer; and apparatus for observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The method includes growing the epitaxial layer on a surface of the wafer and observing scattering of the light from the entire surface of the wafer during growth of the epitaxial layer on the entire surface of the wafer. The growing process is varied in accordance with the observation. With an epitaxial layer of gallium nitride (GaN) the entire surface of the wafer is observed for balls of gallium.Type: GrantFiled: November 1, 2006Date of Patent: August 17, 2010Assignee: Raytheon CompanyInventors: William E. Hoke, Theodore D. Kennedy
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Patent number: 7776724Abstract: A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10?7 Torr and about 1×10?4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.Type: GrantFiled: December 4, 2007Date of Patent: August 17, 2010Assignee: Innovalight, Inc.Inventors: Francesco Lemmi, Elena V. Rogojina, Pingrong Yu, David Jurbergs, Homer Antoniadis, Maxim Kelman
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Publication number: 20100193664Abstract: This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length.Type: ApplicationFiled: January 28, 2010Publication date: August 5, 2010Applicant: BP Corporation North America Inc.Inventor: Nathan G. Stoddard
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Publication number: 20100175614Abstract: A configuration for producing a bulk SiC crystal includes a growing crucible having an electrically conductive crucible wall, an inductive heating device disposed outside the growing crucible for inductively coupling an electric current, which heats the growing crucible, into the crucible wall, and an insulation layer disposed between the crucible wall and the inductive heating device. The insulation layer is formed of a graphite insulation material having short carbon fibers with a fiber length in a range of between 1 mm and 10 mm and a fiber diameter in a range of between 0.1 mm and 1 mm. A method for producing a bulk SiC crystal is also provided.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: SICRYSTAL AGInventor: Thomas Straubinger
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Patent number: 7736446Abstract: A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less, one-fifth or less and one-tenth or less per one lanthanum atom, respectively, the H2O molecule, the CO molecule and the CO2 molecule being originated from an H2O gas component, a CO gas component and a CO2 gas component in an atmosphere under manufacture; and supplying a metal raw material containing at least one selected from the group consisting of lanthanum, aluminum, titanium, zirconium and hafnium and an oxygen raw material gas simultaneously for the substrate under the condition that the number of O2 molecule are set to 20 or more per one lanthanum atom, thereby manufacturing the lanthanum oxide compound on the substrate.Type: GrantFiled: March 19, 2008Date of Patent: June 15, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Akira Takashima, Koichi Muraoka
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Publication number: 20100139762Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.Type: ApplicationFiled: May 2, 2008Publication date: June 10, 2010Applicants: NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, ROHM CO., LTD., TOKYO ELECTRON LIMITED, UBE INDUSTRIES, LTD.Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
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Publication number: 20100139554Abstract: Methods and apparatus for forming gallium nitride and gallium aluminum nitride films, such as gallium nitride and gallium aluminum nitride epitaxial layers on a substrate are provided, including providing a substrate; and exposing the substrate to gallium vapor and an NH3 plasma so as to form a gallium nitride epitaxial layer on at least a portion of the substrate.Type: ApplicationFiled: December 8, 2009Publication date: June 10, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Morteza Farnia, Mehran Moalem
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Patent number: 7728323Abstract: A nitride-based semiconductor substrate has a substrate formed of a nitride-based semiconductor crystal having a mixed crystal composition with three elements or more. The substrate has a diameter of not less than 25 mm, and a thermal resistivity in a range of 0.02 Kcm2/W to 0.5 Kcm2/W in its thickness direction.Type: GrantFiled: October 4, 2006Date of Patent: June 1, 2010Assignee: Hitachi Cable, Ltd.Inventor: Yuichi Oshima
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Publication number: 20100126406Abstract: In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 ?m/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen.Type: ApplicationFiled: November 24, 2009Publication date: May 27, 2010Inventors: Chih-Shiue YAN, Ho-kwang MAO, Russell J. HEMLEY, Qi LIANG, Yufei MENG
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Publication number: 20100123098Abstract: The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 ?m/h.Type: ApplicationFiled: May 5, 2009Publication date: May 20, 2010Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan, Qi Liang
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Patent number: 7718001Abstract: Disclosed is a method for fabricating a GaN semiconductor epitaxial layer. The method includes the steps of: (a) providing a substrate within a reaction furnace; (b) setting a temperature range of the substrate to be 200° C.˜1,300° C.; (C) supplying a Ga metallic source on the substrate; (d) changing the supplied Ga metallic source on the substrate, to Ga metal islands; (e) supplying a nitrogenous source to the Ga metal islands after suspending supply of the Ga metallic source; (f) forming GaN islands by reacting the Ga metal islands with the nitrogenous source; and (g) growing a GaN epitaxial layer by basing the GaN islands as a seed.Type: GrantFiled: April 20, 2005Date of Patent: May 18, 2010Assignee: Galaxia Photonics Co., Ltd.Inventor: Sung-Hoon Jung
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Patent number: 7713582Abstract: A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is suppliedType: GrantFiled: February 28, 2008Date of Patent: May 11, 2010Assignee: Hitachi Kokusai ElectricInventors: Masanori Sakai, Toru Kagaya, Nobuhito Shima
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Patent number: 7713874Abstract: Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.Type: GrantFiled: May 2, 2007Date of Patent: May 11, 2010Assignee: ASM America, Inc.Inventor: Robert B. Milligan
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Patent number: 7695564Abstract: The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation of oxygen (SIMOX) wafer; depositing a polycrystalline diamond film onto the SIMOX wafer; and removing various layers of the SIMOX wafer to leave a Si overlay layer that is epitaxially fused with the polycrystalline diamond film. In the case of the DLC film, the method comprises acts of ion-implanting a Si wafer; depositing an amorphous DLC film onto the Si wafer; and removing various layers of the Si wafer to leave a Si overlay structure epitaxially fused with the DLC film.Type: GrantFiled: February 3, 2005Date of Patent: April 13, 2010Assignee: HRL Laboratories, LLCInventors: Miroslav Micovic, Peter Deelman, Yakov Royter
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Patent number: 7687798Abstract: The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is suppressed and thus dislocation defects do not form. In the first step, the surface of the first group III-V crystal (substrate) is cleansed by desorption of surface oxides. In the second step, a layer of condensed group-V species is condensed on the surface of the first group III-V crystal. In the third step, a mono-layer of constituent group-III atoms is deposited over the layer of condensed group-V species in order for the layer of constituent group-III atoms to retain the condensed group-V layer. Subsequently, the mono-layer of group-III atoms is annealed at a higher temperature.Type: GrantFiled: March 28, 2006Date of Patent: March 30, 2010Assignee: HRL Laboratories, LLCInventor: Binqiang Shi
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Publication number: 20100075175Abstract: A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.Type: ApplicationFiled: September 9, 2009Publication date: March 25, 2010Applicant: SORAA, INC.Inventors: CHRISTIANE POBLENZ, James S. Speck
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Patent number: 7682449Abstract: Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.Type: GrantFiled: August 8, 2007Date of Patent: March 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Eun Joo Jang, Shin Ae Jun
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Patent number: 7682670Abstract: A molecular beam source for use in thin-film accumulation, which enables the adjustment of the volume of a molecular beam, which is discharged per hour by using a needle valve, to be constant irrespective of a decrease in a thin-film element-forming material remaining within a crucible, contains heaters 32 and 42 for heating the thin-film element-forming materials “a” and “b” within crucibles 31 and 41, and valves 33 and 43 for adjusting the volumes to be discharged of molecules of the thin-film element forming materials “a” and “b”, which are generated within the crucibles 31 and 41.Type: GrantFiled: April 10, 2006Date of Patent: March 23, 2010Assignee: Choshu Industry Co., Ltd.Inventors: Osamu Kobayashi, Toshihiko Ishida
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Publication number: 20100012972Abstract: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.Type: ApplicationFiled: November 21, 2006Publication date: January 21, 2010Applicant: The Arizona Board of Regents, a body corparate acting onbehalf of Arizona State UniversityInventors: John Kouvetakis, Cole J. Ritter III, Changwu Hu, Ignatius S.T. Tsong, Andrew Chizmeshya
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Patent number: 7648577Abstract: A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminum is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm?3, without the need for any post-growth step of activating the dopant atoms.Type: GrantFiled: November 27, 2003Date of Patent: January 19, 2010Assignee: Sharp Kabushiki KaishaInventors: Stewart E. Hooper, Katherine L. Johnson, Valerie Bousquet, Jonathan Heffernan
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Patent number: 7645481Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.Type: GrantFiled: September 17, 2004Date of Patent: January 12, 2010Assignee: Tokyo Electron LimitedInventors: Masaru Sasaki, Satohiko Hoshino, Shinji Ide, Yusaku Kashiwagi
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Patent number: 7641736Abstract: A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.Type: GrantFiled: February 22, 2005Date of Patent: January 5, 2010Assignee: Hitachi Metals, Ltd.Inventor: Taisuke Hirooka
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Patent number: 7641998Abstract: An electrically conductive separator element and assembly for a fuel cell which comprises an electrically conductive substrate having a monoatomic layer coating overlying the substrate. The monatomic layer coating may comprise an electrically conductive material, for example, a noble metal, desirably Ru, Rh, Pd, Ag, Ir, Os and preferably Au. Methods of making such separator elements and assemblies are also provided.Type: GrantFiled: September 20, 2006Date of Patent: January 5, 2010Assignee: GM Global Technology Operations, Inc.Inventors: Gayatri Vyas, Mahmoud H. Abd Elhamid, Youssef M. Mikhail
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Patent number: 7625609Abstract: A method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature is described herein. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.Type: GrantFiled: March 27, 2006Date of Patent: December 1, 2009Assignee: Tokyo Electron LimitedInventor: Hiroyuki Matsuura
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Patent number: 7625447Abstract: SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10?6 to 10?8 Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once.Type: GrantFiled: March 18, 2004Date of Patent: December 1, 2009Assignee: Japan Science and Technology AgencyInventors: Jun Suda, Hiroyuki Matsunami, Norio Onojima
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Patent number: 7601217Abstract: A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.Type: GrantFiled: November 22, 2005Date of Patent: October 13, 2009Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventors: Bruce Faure, Fabrice Letertre
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Patent number: 7601216Abstract: A method for forming a patterned noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web with a patterned mask overlaid thereto to a first ion beam having an energy not higher than 500 eV, and to a second beam having an energy of at least 500 eV, containing the ions of at least one noble metal and a gas diffusion electrode.Type: GrantFiled: October 12, 2005Date of Patent: October 13, 2009Assignee: BASF Fuel Cell GmbHInventors: Andrea F. Gulla, Robert J. Allen
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Patent number: 7591897Abstract: A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of metals with oxygen plasma. Using oxygen plasma at low temperatures allows for rapid growth unlike other synthesis methods where nanomaterials take a long time to grow. Density of neutral oxygen atoms in plasma is a controlling factor for the yield of nanowires. The oxygen atom density window differs for different materials. By selecting the optimal oxygen atom density for various materials the yield can be maximized for nanowire synthesis of the metal.Type: GrantFiled: March 20, 2006Date of Patent: September 22, 2009Assignee: University of Louisville Research Foundation, Inc.Inventors: Mahendra Kumar Sunkara, Sreeram Vaddiraju, Miran Mozetic, Uros Cvelbar
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Publication number: 20090199763Abstract: The invention concerns a process and an apparatus for the production of gallium nitride or gallium aluminium nitride single crystals. It is essential for the process implementation according to the invention that the vaporisation of gallium or gallium and aluminium is effected at a temperature above the temperature of the growing crystal but at least at 1000° C. and that a gas flow comprising nitrogen gas, hydrogen gas, inert gas or a combination of said gases is passed over the surface of the metal melt in such a way that the gas flow over the surface of the metal melt prevents contact of the nitrogen precursor with the metal melt.Type: ApplicationFiled: October 17, 2005Publication date: August 13, 2009Inventors: Armin Dadgar, Alois Krost
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Publication number: 20090127566Abstract: [Object] The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. [Means for Solving Problems] A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.Type: ApplicationFiled: April 23, 2007Publication date: May 21, 2009Inventors: Norio Tokuda, Hitoshi Umezawa, Satoshi Yamasaki
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Patent number: 7507288Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.Type: GrantFiled: August 15, 2006Date of Patent: March 24, 2009Assignee: Applied Thin Films, Inc.Inventors: Sankar Sambasivan, Kimberly Steiner
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Patent number: 7504643Abstract: A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.Type: GrantFiled: June 1, 2006Date of Patent: March 17, 2009Assignee: ASML Netherlands B.V.Inventors: Johannes Maria Freriks, Vadim Yevgenyevich Banine, Vladimir Vitalevitch Ivanov, Derk Jan Wilfred Klunder, Maarten Marinus Johannes Wilhelmus Van Herpen
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Patent number: 7495239Abstract: A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa).Type: GrantFiled: December 22, 2005Date of Patent: February 24, 2009Assignee: ASML Netherlands B.V.Inventors: Johannes Maria Freriks, Vadim Yevgenyevich Banine, Vladimir Vitalevitch Ivanov
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Patent number: 7494546Abstract: The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical properties. These films and their properties could be used for protecting electronic devices under space radiation applications such as solar cell operating in space.Type: GrantFiled: July 16, 2007Date of Patent: February 24, 2009Assignee: Blue Wave Semicodnuctors, Inc.Inventors: Ratnakar D. Vispute, Evan Bertrue Jones
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Patent number: 7485349Abstract: A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.Type: GrantFiled: October 25, 2006Date of Patent: February 3, 2009Assignee: ASM Genitech Korea Ltd.Inventors: Won-Yong Koh, Chun-soo Lee
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Patent number: 7481880Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon layer on a substrate, placing a mask over the substrate including the amorphous silicon layer, and applying a laser beam onto the amorphous silicon layer through the mask to form a first crystallized region, the laser beam having an energy intensity high enough to completely melt the amorphous silicon layer, wherein the mask comprises a base substrate, a phase shift layer on the base substrate, having a plurality of first stripes having a first width separated by slits, and a blocking layer overlapping the phase shift layer, having a plurality of second stripes having a second width narrower than the first width, the second stripes being parallel to the first stripes.Type: GrantFiled: January 25, 2006Date of Patent: January 27, 2009Assignee: LG Display Co., Ltd.Inventor: Kwang-Jo Hwang
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Patent number: 7459026Abstract: A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.Type: GrantFiled: August 8, 2005Date of Patent: December 2, 2008Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura
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Patent number: 7452420Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.Type: GrantFiled: April 23, 2007Date of Patent: November 18, 2008Assignees: Carnegie Institution of Washington, The UAB Research FoundationInventors: Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan, Yogesh K. Vohra
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Publication number: 20080265264Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.Type: ApplicationFiled: June 12, 2008Publication date: October 30, 2008Applicant: Waseda UniversityInventors: Noboru Ichinose, Kiyoshi Shimamura, Kazuo Aoki, Encarnacion Antonia Garcia Villora
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Patent number: 7438790Abstract: The present invention provides an electrode for electrolysis including: a conductive substrate; and a conductive diamond formed on a surface of the conductive substrate, the conductive substrate having at least one surface shape selected from the group consisting of: (a) a surface shape of a combination of an Ra of 100-1,000-?m and an RSm of 50-10,000 ?m; (b) a surface shape of a combination of an Ra of 2.5-100 ?m and an RSm of 1.5-800 ?m, and (c) a surface shape of a combination of an Ra of 0.01-2 ?m and an RSm of 0.005-250 ?m, and a process for producing the electrode.Type: GrantFiled: July 25, 2006Date of Patent: October 21, 2008Assignee: Permelec Electrode Ltd.Inventors: Masashi Hosonuma, Masaharu Uno, Tomoyasu Shibata, Yoshinori Nishiki, Tsuneto Furuta
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Patent number: 7419546Abstract: A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy of at least 500 eV, containing the ions of at least one noble metal and electrodes provided by the method.Type: GrantFiled: March 3, 2005Date of Patent: September 2, 2008Assignee: BASF Fuel Cell GmbHInventors: Andrea F. Gulla, Robert J. Allen, Emory De Castro, Enrico Ramunni
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Publication number: 20080178794Abstract: The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.Type: ApplicationFiled: January 25, 2007Publication date: July 31, 2008Applicant: AU Optronics CorporationInventors: An-Thung Cho, Chih-Wei Chao, Chia-Tien Peng, Wan-Yi Liu, Ming-Wei Sun
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Patent number: 7402206Abstract: A method of synthesizing or growing a compound having the general formula Mn+1AXn(16) where M is a transition metal, n is 1, 2, 3 or higher, A is an A-group element and X is carbon, nitrogen or both, which comprises the step of exposing a substrate to gaseous components and/or components vaporized from at least one solid source (13, 14, 15) whereby said components react with each other to produce the Mn+1AXn (16) compound.Type: GrantFiled: December 2, 2002Date of Patent: July 22, 2008Assignee: ABB ABInventors: Peter Isberg, Jens-Petter Palmquist, Ulf Jansson, Lars Hultman, Jens Birch, Timo Seppänen
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Patent number: RE40647Abstract: The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760 Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation.Type: GrantFiled: November 29, 2001Date of Patent: March 10, 2009Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masaki Aoki, Hideo Torii, Eiji Fujii, Mitsuhiro Ohtani, Takashi Inami, Hiroyuki Kawamura, Hiroyoshi Tanaka, Ryuichi Murai, Yasuhisa Ishikura, Yutaka Nishimura, Katsuyoshi Yamashita
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Patent number: RE41503Abstract: The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760 Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation.Type: GrantFiled: May 18, 2006Date of Patent: August 17, 2010Assignee: Panasonic CorporationInventors: Masaki Aoki, Hideo Torii, Eiji Fujii, Mitsuhiro Ohtani, Takashi Inami, Hiroyuki Kawamura, Hiroyoshi Tanaka, Ryuichi Murai, Yasuhisa Ishikura, Yutaka Nishimura, Katsuyoshi Yamashita, Yasuko Nishimura, Syunsuke Nishimura, Emi Kawahara