Abstract: A method for the controlled growth of thin films by atomic layer deposition by making use of multilayers and using energetic radicals to facilitate the process is described in this invention. In this method, a first reactant is admitted into the reaction chamber volume, where there is a substrate to be coated. This first reactant then adsorbs, in a self-limiting process, onto the substrate to be coated. After removing this first reactant from the reaction chamber volume, leaving a layer coating the substrate, a second reactant is then admitted into the reaction chamber volume, which adsorbs onto this initial layer in a self-limiting process. The second reactant is then also removed from the reaction chamber volume. Following this procedure a self-limited multilayer of unreacted species remains adsorbed on the substrate to be coated. If additional chemical species are desirable, these exposures and removals could be continued. Next this multilayer is exposed to a flux of radicals.

Abstract: By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.

Abstract: An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000° C. on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

Abstract: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

Abstract: Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.

Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

Abstract: A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with a light beam, and an image formation optical system which causes a light beam on an irradiation target surface a light intensity distribution having an inverse-peak-shaped pattern formed based on the light beam phase-modulated by the phase modulation element to fall on an irradiation target object. Dimensions of the basic pattern are not greater than a point spread function range of the image formation optical system converted in terms of the light modulation element. The phase modulation area is configured in such a manner that a phase distribution in a light complex amplitude distribution on the irradiation target surface becomes a saw-tooth-like distribution along a line segment in a lateral direction.

Abstract: Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

Abstract: It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of secondary particles which are aggregations of primary particles of manganese oxide, a target plate made of manganese oxide is irradiated with laser light to desorb the component substance of the target plate, and the desorbed substance is deposited on a substrate facing substantially parallel to the aforementioned target plate.

Abstract: A method for forming a silicon nitride film in a PECVD batch type chamber is provided. In the PECVD silicon nitride film deposition method, as the number of batches of processed wafers increases, a silicon nitride deposition time is gradually adjusted to be longer as each batch of wafers is processed. Therefore a uniform thickness of the silicon nitride film is maintained despite variations in deposition rates resulting from an RF plasma cleaning process.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: A method of fabricating an orientation film for a liquid crystal display device is provided. An orientation film is formed on a substrate. An ion-beam irradiation apparatus having an ion generation element is provided. The substrate is placed on a stage in a vacuum chamber. The angle of the substrate is controlled such that the orientation film has a predetermined angle with respect to an ion beam of the ion-beam irradiation apparatus. An ion beam from the ion-beam irradiation apparatus irradiates a surface of the orientation film. The ion beam has an energy intensity of about 300 eV to about 800 eV and a predetermined dose.

Abstract: Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced by doping the SiC in a concentration that changes the SiC conductivity from n-type to semi-insulating. Related embodiments provide for the additional doping of the SiC single crystal with one or more deep level dopants. However, the resulting concentration of deep level dopants, as well as shallow donor or acceptor dopants, is not limited to concentrations below the detection limits of secondary ion mass spectrometry (SIMS) analysis.

Abstract: MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline subtrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources.

Abstract: A method for forming a single crystalline film including the steps of forming an amorphous film on a single crystalline substrate, forming an opening in the amorphous film and thereby exposing a part of a surface of the substrate, and introducing atomic beams, molecular beams or chemical beams onto the surface of the substrate at their incident angle of not more than 40 degrees with respect to the substrate surface under a reduced atmosphere and thereby selectively and epitaxially growing a single crystalline film on the exposed surface of the substrate and then in a lateral direction parallel to the surface of the substrate on the amorphous film.

Abstract: A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150° C. to 250° C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50° to 60° with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20° or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.

Abstract: The bulk synthesis of highly crystalline noncatalytic low melting metals such as ?-gallium oxide tubes, nanowires, and nanopaintbrushes is accomplished using molten gallium and microwave plasma containing a mixture of monoatomic oxygen and hydrogen. Gallium oxide nanowires were 20–100 nm thick and tens to hundreds of microns long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures can occur directly out of molten gallium exposed to appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures are of particular interest for opto-electronic devices and catalytic applications.

Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50–90 GPa and a fracture toughness of 11–20 MPa m1/2. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000° C. to about 1100° C. such that the single crystal diamond has a fracture toughness of 11–20 MPa m1/2.

Abstract: When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

Abstract: High temperature composites and thermal barrier coatings, and related methods, using anisotropic ceramic materials, such materials as can be modified to reduce substrate thermal mismatch.

Abstract: A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

Abstract: The present invention relates a method for epitaxial growth of a second group III-V crystal having a second lattice constant over a first group III-V crystal having a first lattice constant, wherein strain relaxation associated with lattice-mismatched epitaxy is suppressed and thus dislocation defects do not form. In the first step, the surface of the first group III-V crystal (substrate) is cleansed by desorption of surface oxides. In the second step, a layer of condensed group-V species is condensed on the surface of the first group III-V crystal. In the third step, a mono-layer of constituent group-III atoms is deposited over the layer of condensed group-V species in order for the layer of constituent group-III atoms to retain the condensed group-V layer. Subsequently, the mono-layer of group-III atoms is annealed at a higher temperature.

Abstract: A crucible is provided that is thermally stable at high temperatures and is suitable for use in the growth of large, bulk AlN, AlxGa1-xN or other nitride single crystals. The crucible is comprised of specially treated tantalum. During the initial treatment, the walls of the crucible are carburized, thus achieving a crucible that can be subjected to high temperatures without deformation. Once the carburization of the tantalum is complete, the crucible undergoes further treatment to protect the surfaces that are expected to come into contact with nitride vapors during crystal growth with a layer of TaN. If the crucible is to be used with a graphite furnace, only the inner surfaces of the crucible are converted to TaN, thus keeping TaC surfaces adjacent to the graphite furnace elements. If the crucible is to be used with a non-graphite furnace, both the inner and outer surfaces of the crucible are converted to TaN.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

Abstract: A method of growing single crystal Gallium Nitride on silicon substrate is disclosed including: removing oxide layer of silicon substrate, growing buffer layer of Silicon Carbon Nitride (SiCN), and growing single crystalline Gallium Nitride thin film, characterized in that a buffer layer of SiCN is grown to avoid lattice mismatch which appears when Gallium Nitride is grown directly on silicon substrate, and that Rapid Thermal Chemical Vapor Deposition is adopted to grow SiCN buffer layer, and that Metalorganic Chemical Vapor Deposition is adopted to grow single crystalline GaN thin film.

Abstract: An amorphous silicon pattern is formed first. A first region, a second region, at least one first pointed region adjacent to the second region and having a second height, at least one fourth region between the first region and each first pointed region are included in the amorphous silicon pattern. Each fourth region has a fourth height smaller than the second height. A laser crystallization process is performed to form a first single crystal silicon grain in each fourth region.

Abstract: A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

Abstract: A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes with a stripe width (seed width) of about 5 ?m, a wing width of about 15 ?m and a depth of about 0.5 ?m. As a result, mesa portions each shaped like nearly a rectangle in sectional view are formed. Non-etched portions each having the seed multilayer as its flat top portion are arranged at arrangement intervals of L?20 ?m. Part of the sapphire substrate is exposed in trough portions of wings. The ratio S/W of the seed width to the wing width is preferably selected to be in a range of from about ? to about ?. Then, a semiconductor crystal A is grown to obtain a thickness of not smaller than 50 ?m. The semiconductor crystal is separated from the starting substrate to thereby obtain a high-quality single crystal independent of the starting substrate.

Abstract: A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists the growth of the crystalline structure of film. For lithium-ion energy-storage devices, the first material is an intercalation material, which releasably stores lithium ions therein. Supercapacitors and energy-conversion devices are also fabricated according the methods.

Abstract: The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.

Abstract: Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film overlying the substrate; forming a single-crystal seed overlying the substrate and insulator; forming an amorphous film overlying the seed; annealing the amorphous film; and, forming a single-crystal domain in the film responsive to the single-crystal seed. The annealing technique can be (conventional) laser annealing, a laser induced lateral growth (LiLAC) process, or conventional furnace annealing. In some aspects forming a single-crystal seed includes forming a nanowire or a self assembled monolayer (SAM). For example, a Si nanowire can be formed having a crystallographic orientation of <110> or <100>. When, the seed has a <100> crystallographic orientation, then an n-type TFT can be formed.

Abstract: A method of growing quaternary epitaxial films having the formula YCZN wherein Y is a Group IV element and Z is a Group III element at temperatures in the range 550-750° C. is provided. In the method, a gaseous flux of precursor H3YCN and a vapor flux of Z atoms are introduced into a gas-source molecular beam epitaxial (GSMBE) chamber where they combine to form thin film of YCZN on the substrate. Preferred substrates are silicon, silicon carbide and AlN/silicon structures. Epitaxial thin film SiCAlN and GeCAlN are provided. Bandgap engineering may be achieved by the method by adjusting reaction parameters of the GSMBE process and the relative concentrations of the constituents of the quaternary alloy films. Semiconductor devices produced by the present method have bandgaps from about 2 eV to about 6 eV and exhibit a spectral range from visible to ultraviolet which makes them useful for a variety of optoelectronic and microelectronic applications.

Abstract: A waveguide structure and method of fabricating the same, the method comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, and a lattice constant adjusting material, wherein the concentration of the second optical material increases with the height of the first graded layer and the concentration of the lattice constant adjusting material varies in proportion to the second optical material; and forming a second graded layer, the second graded layer comprising the first and second optical materials, and a lattice constant adjusting material, wherein the concentration of the second optical material decreases with the height of the second graded layer and the concentration of the lattice constant adjusting material varies in proportion to the second optical material.

Abstract: Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A rapid rotary switching of the process gases eliminates having to divert the process gases to a system vent and provides for atomic layer film growth sufficient for high-volume production applications. Conventional chemical vapor deposition can also be performed concurrently with atomic layer deposition within the multi-wafer sequential processing chamber.

Abstract: The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

Abstract: A process for the fabrication of a photonic crystal (and the crystal produced thereby) comprising producing a first beam of coherent light; generating a second and a third beam of coherent light each in a fixed phase relationship with the first beam; aligning the beams of coherent light so as to form a fixed relative angle of incidence between each pair of beams and to form an evanescent light interference pattern grid on a substrate having a first electrostatic charge; introducing into the evanescent light interference pattern grid a substance having a second electrostatic charge of an attractive nature to the first electrostatic charge; positioning the substance with the second electrostatic charge using the evanescent interference pattern grid in a planned manner on the substrate so as to form a photonic crystal.

Abstract: A method of forming a component is disclosed. The method includes: providing a core containing a porous material; infiltrating the core with silicon carbide; and removing the porous material of the core, thereby forming a porous substrate containing silicon carbide.

Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas.

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

Abstract: In a method for manufacturing a crystalline silicon film by utilizing a metal element that promotes the crystallization of silicon, an influence of this metal element can be suppressed. A nickel element 104 is retained in contact with a surface of an amorphous silicon film 103 patterned to form a predetermined pattern in such a manner that the metal element is brought into contact with the amorphous silicon film 103 patterned to form a predetermined pattern. Next, the crystalline silicon film 105 is formed by a heat treatment. At this time, the nickel element is segregated in the edge region of the pattern. Further, a crystalline silicon film 100 having no region to which the metal element concentrated by patterning using a mask 107. By using this crystalline silicon film 100 as an active layer, the thin film transistor is fabricated.

Abstract: In a plasma processing apparatus according to the present invention, a gas inlet port and a discharge port are provided on a chamber for introducing and discharging gas into and from the chamber respectively. A sample to be etched is placed on an electrode part, so that a high-frequency power source applies a high-frequency bias to the sample. An electromagnet provided on the periphery of a plasma generation area generates a magnetic field while a waveguide connected to an upper potion of the chamber introduces a microwave into the plasma generation area through a microwave introduction window. Electron cyclotron resonance is excited for the gas for generating plasma. At least a surface of the microwave introduction window exposed to the plasma generation area is made of quartz, while the gas contains fluorine. The apparatus having the aforementioned structure can remove a material adhering to the surface of the microwave introduction window when the sample is etched.

Abstract: A method and system for growing a crystalline layer on a substrate. Using an electrically-shielded RF (ESRF) source, a plasma is created and directed to a substrate inside the ESRF source. The plasma arrives at the substrate surface with a high mobility and enables its constituents to form a highly regular structure on the substrates.

Abstract: A method of deposition of a microwave frequency paraelectric BST-based thin film on a SiC substrate provides a resulting thin film-substrate structure which has no interfacial phases or element/chemical interdiffusion. For physical vapor deposition of the thin film, at least one of (i) thermally stable, refractory semiconductor substrate material is heat-treated during film deposition and (ii) the film-substrate structure is post-deposition heat treated, e.g., annealed, to achieve high quality film crystallinity with a fully developed film microstructure having desired microwave dielectric and insulating properties. For chemical solution deposition, the thin film is deposited onto a thermally stable, refractory semiconductor substrate material and is post-deposition heat treated to achieve a high quality film with a fully developed film microstructure having desired microwave dielectric and insulating properties.

Abstract: A process for producing an epitaxial layer of gallium nitride (GaN). A film of a dielectric whose thickness is about one monolayer is formed on a surface of a substrate. A continuous gallium nitride layer is then deposited on the dielectric film at a temperature sufficiently low to suppress island formation of the gallium nitride. The deposited gallium nitride layer is annealed at a temperature sufficiently high to promote island formation of the gallium nitride. An epitaxial regrowth with gallium nitride at the end of a spontaneous in situ formation of islands of gallium nitride then takes place. This method makes it possible to avoid having to use ex situ etching of masks by photolitographiy or chemical ethching techniques.

Abstract: The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber.

Abstract: A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1-2 0) planes of the ZnO epitaxial film are disposed with an interplanar spacing in the range of about 1.623 to 1.627 Å parallel to the (0 1-1 2) planes of the R-plane sapphire substrate.

Abstract: A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.