Abstract: Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

Abstract: Described are methods and apparatuses for the electrochemical generation and constant concentration delivery of high purity gases used in the production of semiconductors and the doping of semiconductors.

Abstract: Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Abstract: A method of growing a single crystal thin film characterized by heating a silicon single crystal substrate placed in a reactor vessel, then while the temperature of the silicon single crystal substrate is 850.degree. C. or below, introducing a mixed gas composed of hydrogen fluoride gas and hydrogen gas into the reactor vessel for removing a native oxide film on a main surface of the silicon single crystal substrate in an ambient of hydrogen gas; and thereafter, growing a single crystal thin film by a vapor phase epitaxy on said main surface free from the native oxide film at a temperature of 1,000.degree. C. or below. With this method, both evaporation of a dopant caused by outdiffusion and autodoping can be suppressed with a substantial reduction of the processing time.

Abstract: A semiconductor processing method of depositing a film on a substrate using an organometallic precursor, where the precursor comprises a coordination complex having a central linking atom and at least two ligands bonded thereto, at least one of the ligands including an organic species comprising a carbon atom having at least one hydrogen atom bonded thereto thereby defining a carbon-hydrogen bond of the species, includes, a) passing a feed material through a plasma generating location effective to induce the feed material into a plasma state; b) flowing the feed material from the plasma generating location, the feed material flowing from the plasma generating location comprising a gas in an activated metastable state; c) combining an organometallic precursor with the gas when the gas is in the activated metastable state to separate the organic species from the organometallic precursor coordination complex while leaving the carbon-hydrogen bond intact, the organometallic precursor being in a gaseous non-plasma

Abstract: A method of making n-type semiconducting diamond is disclosed, which is doped with boron-10 at the time of diamond formation and bombarded with neutrons for in-situ conversion of boron-10 to lithium-7, while filtering the neutrons from high energy components during irradiation.

Abstract: The present invention concerns a process for the preparation of a rare-earth sulphide characterized in that a rare-earth halide is brought into the presence of an alkaline or aluminum halide and heated in the presence of hydrogen sulphide at a temperature which is sufficient to volatilize the halides.More particularly, the halide is a chloride, the rare-earth is cerium and the alkali is sodium.

Abstract: A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

Abstract: In a method using organic vapor phase deposition (OCPD), for the growth of thin films of optically nonlinear organic salts, a volatile precursor of each component of the salt is carried as a vapor to a hot-wall reaction chamber by independently controlled streams of carrier gas. The components react to form a polycrystalline thin film on substrates of glass and gold. Excess reactants and reaction products are purged from the system by the carrier gas. For example, the method provides the growth of polycrystalline, optically nonlinear thin films of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) with >95% purity.

Abstract: A chemical vapor deposition method for forming films or coatings of metal oxide films showing a giant magnetoresistive effect, with the metal oxides having the formula La.sub.x A.sub.1-x MnO.sub.3 wherein A is selected from the group consisting of barium, calcium, manganese, and strontium, and x is a number in the range of from 0.2 to 0.4. The method uses a liquid source delivery CVD approach, wherein source reagent solution precursor is flash vaporized and is delivered to a CVD chamber, wherein it decomposes to deposit the multicomponent metal oxide films with well-controlled stoichiometry.

Abstract: An atomic layer epitaxy method uses an organometal consisting of a metal and an alkyl group and having a self-limiting mechanism. At least one bond between the metal and the alkyl group of the organometal is dissociated, and organometal molecules consisting of the metal and the alkyl group, and a hydride or organometal molecules consisting of a different metal are alternately supplied on a substrate while at least one bond is left, thereby growing an atomic layer on the substrate. An atomic layer epitaxy apparatus is also disclosed.

Abstract: Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl.sub.2, etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H.sub.2 molecules.

Abstract: A process for forming a deposited film comprises the steps:(a) arranging a substrate having crystal orientability uniformly on its surface in a film forming space for formation of a deposited film;(b) introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other, thus permitting both the species to react chemically with each other thereby to form a deposited film on the above substrate; and(c) introducing into said film forming space a gaseous substance (E) having etching action on said deposited film to be formed or a gaseous substance (E2) forming said gaseous substance (E) during the above film formation step (b), thus exposing the surface for deposited film growth to said gaseous substance (E) and thereby effecting an etching action to conduct crys

Abstract: A supersonic, direct-current arcjet is designed for expansion into low pressure, the arcjet operates as mixtures of hydrogen and argon to convert molecular hydrogen to atomic hydrogen and direct the atomic hydrogen to a substrate surface. A hydrocarbon (methane or acetylene) is introduced in the arcjet plume where it is converted to hydrocarbon precursors and is directed to the substrate surface where it combines with the atomic hydrogen to produce a diamond film.

Abstract: A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.

Abstract: A process for epitaxially growing a compound semiconductor layer containing at least arsenic on a single crystal silicon substrate, which prevents the silicon impurity from intruding said compound semiconductor layer. The process comprises supplying one of the starting material gas, ASH.sub.3, into the reaction furnace to effect growth, but in such a manner that the AsH.sub.3 gas is pyrolyzed in advance to thereby supply arsenic alone either in an atomic or a molecular state. The GaAs layer is thus epitaxially grown on a single crystal silicon substrate in the crystal growing chamber, i.e., the reaction furnace in the apparatus, under an atmosphere comprising atomic or molecular arsenic at a temperature in the range of from 400.degree. to 650.degree. C. and at a vacuum degree of about 0.1 Pa. By thus epitaxially growing GaAs layer under an atmosphere comprising atomic or molecular arsenic, the intrusion of silicon impurity into the GaAs layer during its growth can be effectively prevented.