Abstract: A vacuum deposition facility for continuously depositing, on a running substrate, coatings formed from metal or metal alloy, and including: a central casing including a vapor jet coater, the inner walls of the central casing being suited to be heated at a temperature above the condensation temperature of the metal or metal alloy vapors, a vapor trap located at the substrate exit of the central casing, the inner walls of the vapor trap being suited to be maintained at a temperature below the condensation temperature of the metal or metal alloy vapors, the passage linking the central casing to the vapor trap including at least one thermal connector extending at least from the inner walls of the central casing to the inner walls of the vapor trap.

Abstract: This facility comprises a support (1) for the substrate, a pressing roll (2), capable of pressing the substrate against said support, a treatment unit positioned downstream of the pressing roll, with reference to the direction of travel of the substrate, said unit comprising injection means (37) for injecting a treatment gas towards said support and means (8) for transforming the surface of the moving substrate.

Abstract: Apparatus for plasma processing of a continuous fiber, comprising a first and a second plasma torch. Each plasma torch comprises oppositely arranged electrodes to define a plasma discharge chamber between the electrodes. The plasma discharge chamber comprises an inlet and an outlet for passing a plasma forming gas between the electrodes. The apparatus further comprises an afterglow chamber in fluid communication with the outlets of the plasma discharge chambers, which comprises a substrate inlet and a substrate outlet arranged at opposite sides of the outlets of the plasma discharge chambers. A transport system is configured to continuously transport the fiber from the substrate inlet to the substrate outlet through the afterglow chamber. The substrate inlet comprises an aperture having a cross-sectional size substantially smaller than a cross-sectional size of the afterglow chamber. The outlets of the plasma torches face each other and exhaust plasma activated species into the afterglow chamber.

Abstract: An electrode for a plasma reactor, the electrode comprising an elongate body having an inlet end and an opposed outlet end, a reaction region extending along a portion of the elongate body, a first sealing region located between the reaction region and the inlet end of the elongate body and a second sealing region located between the reaction region and the outlet end of the elongate body, wherein the first sealing region and the second sealing region each comprise a plurality of receiving portions adapted to receive a sealing member therein, and wherein a barrier member adapted to reduce or eliminate the flow of fluid between the receiving portions provided between each of the plurality of receiving portions.

Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: Devices for deposition of material via organic vapor jet printing (OVJP) and similar techniques are provided. The depositor includes delivery channels ending in delivery apertures, where the delivery channels are flared as they approach the delivery apertures, and/or have a trapezoidal shape. The depositors are suitable for fabricating OLEDs and OLED components and similar devices.

Abstract: Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: Disclosed herein is a method of manufacturing an electrode for a secondary battery, including: a process of continuously forming two or more slurry coated parts on one surface or both surfaces of metal foil in a second direction which is a longitudinal direction of the metal foil so that a non-coated part which an electrode slurry is not coated is positioned between the slurry coated parts coated with the electrode slurry including an electrode active material in a first direction which is a transverse direction of the metal foil; a process of forming mixture coated parts by drying the slurry coated parts and rolling by a roller; and a process of forming electrode strips by slitting the non-coated part in the second direction, wherein before continuously forming the slurry coated parts, while continuously forming the slurry coated parts, or between continuously forming the slurry coated parts and forming the mixture coated parts, the method further includes a process of forming non-continuous linear slits in

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract: A thin film deposition system includes a web guide system having a plurality of web guides defining a web transport path for the web of substrate. The web guide system includes a moveable portion including first and second moveable-position web guides. A web transport control system advances the web of substrate along the web transport path at a web advance velocity. A deposition head is located along the web transport path between the first and second moveable-position web guides. A motion actuator system synchronously moves a position of the first and second moveable-position web guides such that they move forward and backward according to a defined oscillating motion pattern while maintaining a constant distance between the first and second moveable-position web guides, thereby causing a portion of the web of media adjacent to the deposition head to move forward and backward in an in-track direction.

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract: Disclosed is a gas injector for a semiconductor processing system comprising a tube, and at least one nozzle head mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises: a body, and at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end, wherein the plurality of flow regulation components are each constructed and arranged such that a film buildup on inner surfaces of the gas injector is reduced.

Abstract: Barrier films comprising a PECVD barrier coating with diamond-like carbon are disclosed, along with methods of manufacturing such films, and laminated packaging materials comprising such films, in particular intended for liquid food packaging are disclosed. Packaging containers comprising the laminated packaging material or being made from the laminated packaging material, in particular to a packaging container intended for liquid food packaging are also disclosed.

Abstract: Barrier films comprising a PECVD barrier coating from diamond-like carbon are disclosed, along with methods of manufacturing such films, and laminated packaging materials comprising such films, in particular for liquid food packaging, are disclosed. Packaging containers comprising the laminated packaging material or being made from the laminated packaging material, in particular a packaging container for liquid food packaging, are also disclosed.

Abstract: A roll to roll fabrication apparatus includes: a vacuum chamber having an installation chamber and a process chamber; a preprocessing unit in the installation chamber to process a surface of a film which is transferred to enhance a film characteristic in a subsequent CVD process; a process drum in the process chamber to wind the film thereon; a process treatment unit in the process chamber to form a layer by performing a CVD process on the film wound on the process drum; and a plurality of heaters in the installation chamber and the process chamber to gradually increase a temperature of the film wound on the process drum to prevent application of a thermal impact to the film due to the high-temperature process drum.

Abstract: A gate valve has a communication block with a communication passage and a valve unit having a valve plate movable between a partitioning position and an open position. A lower end part of the valve plate comes into pressurized contact with a surface of a band-shaped base material transferred through the communication passage between a first chamber and a second chamber. Due to a force of this pressurized contact, a back surface of the base material is seated on a seating surface provided in the communication passage. A groove is formed in the lower end of the valve plate, and a roller-shaped sealing member with a central shaft is inserted into the groove. Opening parts are formed in both axial side-wall surfaces of the groove such that the end parts of the central shaft of the sealing member are inserted into the opening parts and pivotally supported with a clearance.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: The present disclosure relates to a current collector production apparatus for producing a current collector. The current collector includes a current collector substrate, a conductive layer disposed on at least one surface of the current collector substrate. The current collector production apparatus includes an oven having a space where the current collector is to be heated, and a passivation ozone knife having a current collector injection port. The current collector injection port is configured to release ozone in such a manner that the ozone reacts with a surface material of the conductive layer, so as to form a passivation layer. The passivation ozone knife is disposed inside the oven. The current collector produced in the present disclosure can prevent HF in electrolyte from reacting with Al, so as to solve a problem of detachment of active material from the current collector and maintain the performance of lithium-ion battery.

Abstract: There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.

Abstract: A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.

Abstract: Methods produce an adhesive tape, in which a fluoropolymer web and a cross-linked silicon-adhesive-mass web are supplied to a lamination gap in the same supply direction, and the cross-linked silicon-adhesive-mass web and the fluoropolymer web are laminated together with a respective first surface. The first surface of the fluoropolymer web and the first surface of the cross-linked silicon-adhesive-mass web are activated by a plasma, wherein the plasma continuously acts on the two first surfaces under atmospheric pressure, starting before the lamination gap until entering the lamination gap, and the two activated first surfaces are pressed onto one another in the lamination gap.

Abstract: A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Abstract: A device for coating one or more yarns by a vapor deposition method, the device including a treatment chamber defining a first and a second treatment zone in which at least one yarn is to be coated by performing a vapor deposition method, the first and second zones being separated by a wall and the first zone surrounding the second zone, or being superposed on the second zone; a conveyor system to transport the at least one yarn through the first and second zones; a first injector device to inject a first treatment gas phase into the first zone and a first removal device configured to remove the residual first gas phase from the first zone; and a second injector device configured to inject a second treatment gas phase into the second zone, and a second removal device configured to remove the residual second gas phase from the second zone.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: A deposition system and method includes a deposition source, a roll conveyor and at least one shield positioned at a location proximate to the deposition source.

Abstract: A dielectric barrier discharge (DBD) plasma apparatus for synthesizing metal particles is provided. The DBD plasma apparatus includes an electrolyte vessel for receiving an electrolyte solution comprising metal ions; an electrode spaced-apart from the electrolyte vessel; a dielectric barrier interposed between the electrolyte vessel and the electrode such that, when the electrolyte solution is present in the electrolyte vessel, the dielectric barrier and an upper surface of the electrolyte solution are spaced-apart from each other and define a discharge area therebetween; and gas inlet and outlet ports in fluid communication with the discharge area such that supplying gas in the discharge area while applying an electrical potential difference between the electrode and the electrolyte solution cause a plasma to be produced onto the electrolyte solution, the plasma interacting with the metal ions and synthesizing metal particles.

Abstract: A lithiated carbon phosphonitride material is made by, for example, reacting P(CN)3 with LiN(CN)2 in solution (for example, dimethoxyethane or pyridine), then drying the solution to obtain the product. The material is a thermoset that is stable to over 400° C. and exhibits up to 10?3 S·cm2 of Li+ conductivity.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: Provided is a substrate processing apparatus including a load-lock chamber; a transfer chamber connected to the load-lock chamber; and one or more processing chambers connected to the transfer chamber. The transfer chamber includes a transfer arm that transfers a substrate between the load-lock chamber and the one or more processing chambers, the load-lock chamber includes a plurality of load-lock stations for accommodating a plurality of substrates as a matrix of m×n. According to the substrate processing apparatus, a time taken to transfer substrates may be reduced greatly, and productivity may be improved.

Abstract: An apparatus for processing battery electrodes includes: a microwave applicator cavity with slots on opposite ends to allow a continuous sheet to move through the cavity in a first direction; a processing chamber constructed of microwave-transparent material, disposed within the applicator cavity and surrounding the continuous sheet, the processing chamber having slots to allow the continuous sheet to pass through it; a microwave power supply to deliver power to the applicator cavity; a source of heated gas providing a controlled gas flow through the processing chamber in a direction opposite the first direction; and, at least one non-contacting temperature measuring device positioned to measure a surface temperature at a selected location on the continuous sheet as it passes through the processing chamber. The apparatus is particularly suited for removing polar solvents from porous electrode coatings. A related method is also disclosed.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: A device is provided for generating plasma by microwaves for CVD coating a substrate having a vacuum container into which a reaction gas can be fed and an electrical conductor arranged therein which is connected on each of both ends thereof to a device for coupling microwaves and to a voltage source with which a difference of potential can generated between the electrical conductor and the surrounding vacuum container. The electrical conductor is electrically insulated from the devices for coupling microwaves. The electrical conductor has a rod-shaped design or a curved run. The electrical conductor is connected to the voltage source via a feedthrough filter. The device for coupling microwaves expands in a funnel shape toward the electrical conductor and is partially or completely filled by a dielectric material. The device for coupling microwaves has groove-shaped recesses running along a circumference.

Abstract: A thin film deposition apparatus that can be simply applied to produce large-sized display devices on a mass scale and that improves manufacturing yield. The thin film deposition apparatus includes a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in a second direction that is perpendicular to the first direction. A deposition is performed while the substrate or the thin film deposition apparatus moves relative to each other in the first direction, and the deposition source, the deposition source nozzle unit, and the patterning slit sheet are formed integrally with each other.

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

Abstract: The invention relates to a vacuum processing system for processing a substrate (2), with an enclosure (1) for carrying the substrate (2) to be treated in a substrate plane (4), whereby the enclosure (1) comprises a first reflecting means (6) and a heating means (5) having a first plane surface (10) and an opposed second plane surface (11), the heating means (5) is configured for irradiating heating energy only via the first surface (10) and/or via the second surface (11), the first reflecting means (6) is configured for reflecting the heating energy irradiated by the heating means (5) onto the substrate plane (4), and the heating means (5) is arranged such that the first surface (10) faces towards the first reflecting means (6) and the second surface (11) faces towards the substrate plane (4).

Abstract: A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process.

Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.

Abstract: Embodiments of gas mixing apparatus are provided herein. In some embodiments, a gas mixing apparatus may include a container defining an interior volume, the container having a closed top and bottom and a sidewall having a circular cross section with respect to a central axis of the container passing through the top and bottom; a plurality of first inlets coupled to the container proximate the top of the container to provide a plurality of process gases to the interior volume of the container, the plurality of first inlets disposed such that a flow path of the plurality of process gases through the plurality of first inlets is substantially tangential to the sidewall of the container; and an outlet coupled to the container proximate the bottom of the container to allow the plurality of process gases to be removed from the interior volume of the container.

Abstract: An apparatus for thermal treatment of dielectric films on substrates includes: a microwave applicator cavity and microwave power source; a workpiece to be heated in the cavity, having a porous coating on a selected substrate; and, an apparatus for introducing a controlled amount of a polar species into the porous coating immediately before heating by the microwave power. The interaction of the polar species with the microwaves enhances the efficiency of the process, to shorten process time and reduce thermal budget. A related method includes: depositing a porous film on a substrate; soft baking the film to a selected state of dryness; introducing a controlled amount of a polar species into the soft baked film; and, applying microwave energy to heat the film via interaction with the polar species.

Abstract: A filter apparatus for arc ion evaporator used in the cathodic arc plasma deposition system according to this invention is characterized by a set of multiple straight tubes placing in parallel to one another wherein the size and/or amount of large particles, which could contaminate the plasma beam, can be controlled. The filter apparatus further comprises a set of solenoid coils which coil around the filter to generate a magnetic field to drive plasma to the targeting object or material. The filter apparatus of this present invention can reduce a number of large particles in the plasma beam and can further be designed into compacted shapes with high flexibility for adaptation in order to suit engineering demands.

Abstract: A process for obtaining a material including a transparent substrate coated with a stack of thin layers which are deposited by cathode sputtering, optionally assisted by a magnetic field, including at least one silver-based functional metal layer and at least two antireflective coatings, each antireflective coating including at least one dielectric layer, so that each functional metal layer is positioned between two antireflective coatings, the process includes the sequence of following stages: (a) an antireflective coating including at least one thin layer based on crystalline nickel oxide is deposited, then (b) at least one silver-based functional metal layer is deposited above and in contact with the thin layer based on crystalline nickel oxide.

Abstract: An evaporation apparatus for depositing material on a substrate by a drum is described. The evaporation apparatus includes a first set of evaporation crucibles aligned in a first line a first direction for depositing evaporated material on the substrate; a first gas supply pipe extending in the first direction being arranged between at least one of the evaporation crucibles of the first set of evaporation crucibles and the drum; and a second gas supply pipe extending in the first direction for providing a gas between the first set of evaporation crucibles and the drum with openings shaped and positioned to improve the uniformity of the deposition of the material.

Abstract: Disclosed is an apparatus and method for manufacturing SiO, which may lower a manufacturing cost of SiO by collecting SiO continuously. The apparatus for manufacturing SiO includes a reaction unit configured to receive a SiO-making material and bring the received material into reaction by heating to generate a SiO gas; and a collecting unit configured to maintain an internal temperature lower than an internal temperature of the reaction unit, the collecting unit including a rotating member in an inner space thereof, wherein the collecting unit collects a SiO deposit by introducing the SiO gas generated by the reaction unit through an inlet formed at least at one side thereof and allowing the introduced SiO gas to be deposited to a surface of the rotating member.

Abstract: An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

Abstract: Apparatuses and methods for depositing materials on both side of a web while it passes a substantially vertical direction are provided. In particular embodiments, a web does not contact any hardware components during the deposition. A web may be supported before and after the deposition chamber but not inside the deposition chamber. At such support points, the web may be exposed to different conditions (e.g., temperature) than during the deposition.

Abstract: An installation, comprising a chamber comprising two ends, a transport unit and a support unit which introduce a two-sided substrate into the chamber, a stabilized high-voltage high-frequency power supply of at least 200 kW, comprising an HF transformer comprising a primary and a secondary circuit connected to terminals, at least two electrodes being connected to the terminals of the secondary circuit, said electrodes being placed on each side of the substrate, at least one dielectric barrier placed between the at least two electrodes; a power supply regulation/control unit placed upstream of the HF transformer that is capable of increasing an active power/reactive power ratio, an introducing unit for introducing at least one reactive substance into the chamber, and an extracting unit for extracting residual substances, wherein an adjustable inductor is placed in the secondary circuit of the transformer in parallel with a circuit comprising the at least two electrodes, and the adjustable inductor enables a ph

Abstract: The present invention relates to a facility for the continuous vacuum deposition of a metal coating on a substrate in motion, comprising a vacuum deposition enclosure (24), at least one vapor jet deposition head (25,26) connected to an evaporator pot (9) designed to contain the coating metal in liquid form (11), through a vapor supply pipe (20) provided with a distribution valve (19), and a melting furnace (1) for said metal, said furnace being at atmospheric pressure, located below the lowest portion of the evaporator pot (9) and connected to the evaporator pot (9) by at least one automatic supply pipe (8) of the evaporator pot (9) provided with a supply pump (6) and by at least one liquid metal return pipe (8A,18) optionally provided with a valve (16,17), regulating means for the supply pump (6) further being present to regulate a determined liquid metal level in the evaporator pot (9), characterized in that it comprises, in each said supply and return pipes (8; 8A,18), a so-called heat valve area (7,13,15)

Abstract: The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.