Abstract: This invention relates to cleaning compositions comprising organic catalysts having enhanced enzyme compatibility and processes for making and using such cleaning compositions.

Abstract: A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

Abstract: A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: A substrate treatment apparatus includes: a nozzle having an opposing surface to be opposed to and spaced from a front surface of a substrate rotated by a substrate rotating unit, the nozzle further having an outlet port provided in the opposing surface to be opposed to a rotation center of the substrate; a second liquid supply control unit which controls the second liquid supplying unit to fill a space defined between the front surface and the opposing surface with the second liquid in a liquid filled state, and then stop supplying the second liquid to form a liquid puddle in the space; and a first liquid supply control unit which controls a first liquid supplying unit to spout a first liquid from the outlet port after the formation of the liquid puddle.

Abstract: A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.

Abstract: A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete hole connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.

Abstract: In this disclosure, a reactor system is described. The reaction system comprises (a) a reaction vessel having an inner wall, wherein said reaction vessel is configured to receive reactants and export products and byproducts; (b) a primary quench device (PQD) configured to receive a coolant and disperse said coolant into said reaction vessel; and (c) a secondary quench device (SQD) configured to receive a coolant and disperse said coolant into said reaction vessel; wherein said PQD comprises an array of spray nozzles fixed on the inner wall of said reaction vessel at a first axial position; and wherein said SQD comprises (1) an axially movable pipe having a coolant entry end and a nozzle end, wherein said pipe is configured to be removably fixed inside said reaction vessel; and (2) a spray nozzle that is fluidly connected to said pipe at its nozzle end via a fluid tight seal connection.

Abstract: Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.

Abstract: A process chamber for processing semi-conductor wafers. The chamber includes at least one rotor within the process chamber. The rotor is adapted to receive and/or process semi-conductor wafers. The top of the process chamber also includes a tiltable rim. This rim tilts from a non-inclined position to an inclined position. The wafers may be loaded into and unloaded from the process chamber when the rim is in its inclined position.

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: The pickling process designed for pickling electrical steel strip in a continuous fashion comprising immersing the strip in at least one pickling tub. The pickling tub contains a mixture of HCl, Fe2+, and Fe3+ and a low concentration of HF. Upon exiting the final pickling tub, the strip may be brushed or scrubbed to loosen any residual scale to form a clean strip.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: A process system includes a manufacture device, a concentration detector and a compensation device. The manufacture device is used for processing a wafer using a chemical solution. The concentration detector detects a concentration of a key component in the chemical solution. The compensation device provides a supplement solution to the manufacture device when the concentration of the key component in the chemical solution is lower than a definite value, wherein the supplement solution includes a component that is the same as the key component in the chemical solution.

Abstract: A cleaning method for a wafer is provided. First, a first cleaning process is performed wherein the first cleaning process includes providing a cleaning solution having a first concentration. Next, a second cleaning process is performed, wherein the second cleaning process includes providing the cleaning solution having a second concentration. The second concentration is substantially greater than the first concentration. Next, a post-cleaning process is performed to provide dilute water.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: A modular chemical delivery system is designed to be readily convertible from use with a warewashing system to use with a laundry system, or vice-versa, merely by the replacement of one chip in the controller of the system. The dispensing system is also readily expandable by adding additional satellite pumps in order to inject additional chemicals into a single washing unit, and/or to supply chemicals to additional washing units. Plug and play technology is used so that control intelligence can be distributed from the main system controller to satellite controllers, and so that additional satellite units may be readily added, identified, and properly integrated into the dispensing system.

Abstract: A component from a substrate processing chamber which has plasma process residues on both its internal and external surfaces, is removed from the processing chamber, and transferred to a cleaning chamber. The component is exposed to an energized cleaning gas in the cleaning chamber, and the cleaning gas is exhausted from below the component so that the cleaning gas cleans off the residues on both the internal and external surfaces of the component. It has been determined that the cleaning gas can also repair surface defects in the component.

Abstract: The present application relates to delivery particles comprising benefit agents, and products comprising such delivery particles, as well as processes for making and using such delivery particles and products comprising such delivery particles. The process of making such particles does not unduly degrade the benefit agent and when such particles are employed in a product, they are stable, yet they release the desired amount of benefit agent when such product is used as intended.

Abstract: A wash element for washing one or more reusable fluid manipulators is provided comprising at least one nozzle for connection to a fluid pump to generate a fluid jet and at least one deflector surface positioned to deflect the fluid jet towards a washing zone for receiving at least a portion of the fluid manipulator. The deflector surface is being shaped to broaden the fluid jet. The invention further relates to a wash station having a cavity provided with one or more wash elements. The invention yet further relates to an automated system for manipulating fluids comprising at least one wash station and a controller set up to control washing the fluid manipulator. In a process for washing the reusable fluid manipulator at least a portion of the fluid manipulator is moved in a washing zone, a fluid jet of washing fluid is generated and directed onto a deflector surface shaped to broaden and deflect the fluid jet towards the washing zone.

Abstract: A cleaning liquid is pressurized and superheated to a condition, in which temperature of the cleaning liquid is above an atmospheric boiling point. A product to be cleaned is interposed between a pair of liquid holding blocks, so that gaps are respectively formed between side surfaces of the product and the liquid holding blocks. The pressurized and superheated liquid is injected to the product so that layers of condensate of vapor of injected cleaning liquid are formed in the gaps. Contamination on the surface of the product is removed by the cleaning liquid and the surface is dried by latent heat of the condensate of the vapor of the cleaning liquid.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Abstract: A method of cleaning a support plate according to which, while no waste solution is produced after cleaning the support plate, the support plate can be treated at low cost. The method of cleaning the support plate includes the step of removing an organic substance adhered to the support plate by putting the support plate in contact with oxygen plasma.

Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Abstract: There is an apparatus for cleaning a substrate (5) mounted on a moveable platen. In an example embodiment, the apparatus comprises a first chamber (20), the first chamber has solvent-dispensing nozzles (25); the solvent-dispensing nozzles wet the substrate surface (5) with a solvent (7) as the platen transports the substrate. The platen moves in a predetermined direction and at a predetermined scan velocity as it transports the substrate into a process chamber. The process chamber has a hot source (30) at a predetermined height (h) from the substrate surface (5); it provides heat energy directed toward the substrate surface, the heat energy evaporates the solvent (7) dispensed on the substrate surface; the solvent evaporation removes particulates (35) from the substrate surface, as the platen transports the substrate from the first chamber (20) into the process chamber. Substrates cleaned may include precision photo-masks, or wafers.

Abstract: The invention provides an aqueous bleaching solution for substrate treatment comprising a source of oxidant and a suspended polymer matrix having a plurality of optically functional particles associated with one or more copolymers present in the polymer matrix. The plurality of optically functional particles are associated with the copolymer during polymerization of at least one hydrophobic and at least one hydrophilic monomer so as to form a polymer matrix useful to impart an aqueous bleaching solution with optically functional properties providing a benefit to the solutions during storage, use and application to substrates for treatment.

Abstract: A method of warewashing for the removal of starch is described herein. The method includes applying an alkaline composition to a dish, then applying an acidic composition to a dish, and then applying a second alkaline composition to the dish. The method may include additional steps. Compositions for using with the method are also disclosed. Finally, dish machines that may be used in accordance with the method are disclosed.

Abstract: The present invention provides engineered protease variants. In particular, the protease variants comprise combinable mutations at selected surface positions that affect the charge and/or hydrophobicity of the enzyme to enhance at least one desired property of the resulting variant enzyme in a chosen application. Compositions comprising the protease variants, and methods for using the same are also provided.

Abstract: System for treating and/or processing liquid products, in particular beverages, having at least two system components, having a cleaning and rinsing system for cleaning and rinsing of at least product-carrying regions of the system components with at least one liquid cleaning and rinsing medium, and having at least one source for providing the cleaning and rinsing medium.

Abstract: The present invention relates to the field of cleaning in general, and in particular that of industrial cleaning and of domestic cleaning. More specifically, the invention aims to remove scale, oxalate scale, comprising salts of oxalic acid, and mainly mineral salts of oxalic acid, by means of a mixture of acids comprising at least one alkanesulphonic acid and at least one other mineral acid.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: An apparatus and method for cleaning passageways and the like with a two-phase mixture of gas under pressure and an aqueous cleaning solution. The two-phase cleaning mixture is generated in a module and is passed out of the module at a predetermined rate that determines droplet size, velocity and droplet density at the pipeline surface to be cleaned. The droplets impact the walls of the passageway to be cleaned, thereby fragmenting, eroding and removing contaminants in said passageway. These are then flushed out of the passageway by the two-phase flow. The flow of cleaning solution can be steady or pulsed. The apparatus and process include a clean-in-place system that is useful in food, beverage, pharmaceutical and similar process industries.

Abstract: The present application relates to perfume raw materials, perfume delivery systems and consumer products comprising such perfume raw materials and/or such perfume delivery systems, as well as processes for making and using such perfume raw materials, perfume delivery systems and consumer products. Such perfume raw materials and compositions, including the delivery systems, disclosed herein expand the perfume communities' options as such perfume raw materials can provide variations on character and such compositions can provide desired odor profiles.

Abstract: An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.

Abstract: Provided is a liquid processing apparatus in which a target substrate is horizontally held on a substrate holding unit and rotated around a vertical shaft, and the chemicals are supplied from a chemical supplying unit to the bottom surface of the target substrate that is rotating. In particular, the liquid processing apparatus performs a first step in which the chemicals are supplied to the target substrate while rotating the target substrate at a first rotation speed, a second step in which the supply of the chemicals is halted and the chemicals are thrown off by rotating the target substrate at a second rotation speed higher than the first rotation speed, and a third step in which the rinse liquid is supplied to the target substrate while rotating the target substrate at a third rotation speed equal to or lower than the first rotation speed.

Abstract: A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer.

Abstract: The present application relates to perfume raw materials, perfume delivery systems and consumer products comprising such perfume raw materials and/or such perfume delivery systems, as well as processes for making and using such perfume raw materials, perfume delivery systems and consumer products. Such perfume raw materials and compositions, including the delivery systems, disclosed herein expand the perfume communities' options as such perfume raw materials can provide variations on character and such compositions can provide desired odor profiles.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: Provided is a cleaning process which is simplified and in which a time required for the cleaning process is reduced and which has an excellent cleaning effect. The cleaning process comprises loading a wafer in a high pressure cleaner, injecting high-purity gaseous carbon dioxide (CO2) having low pressure into the high pressure cleaner, injecting CO2 having lower pressure than supercritical cleaning pressure into the high pressure cleaner, cleaning the wafer by injecting a supercritical homogeneous transparent phase mixture in which a cleaning additive and supercritical CO2 are mixed, into the high pressure cleaner under a supercritical cleaning pressure, rinsing the wafer by injecting a supercritical rinsing mixture in which a rinsing additive and supercritical CO2 are mixed, into the high pressure cleaner, and separating CO2 from a mixture discharged from the high pressure cleaner.

Abstract: An apparatus and a method are provided for accurately analyzing and evaluating a degree of contamination on a chamfered part without mixing impurities from parts other than the chamfered part into chemicals. At a position in which, on a front plane flat part of a semiconductor wafer, a boundary region bordering the chamfered part can come into contact with the chemicals, a radius direction position of the chemicals (a distance between a chemicals center and a wafer center) is determined, scanning is performed in a circumference direction, and the chemicals including impurities are collected. Then, at a position that can be brought into contact with the both chamfered part of the semiconductor wafer and the boundary region, a radius direction position of the chemicals is determined, scanning is performed in the circumference direction and the chemicals including impurities are collected.

Abstract: A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both.

Abstract: A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

Abstract: In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface.

Abstract: The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device by a dispensing device while one or more such microelectronic devices are supported on a turntable in a generally horizontal fashion. Drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying. Particle counts and evaporation thicknesses are reduced by delivering a tensioactive compound like IPA, during at least portions of the rinsing and drying steps while a microelectronic device is controllably rotated.

Abstract: A method for processing a substrate includes receiving a substrate and processing the substrate using a first fluid meniscus and a second fluid meniscus. The first fluid meniscus and the second fluid meniscus are applied to a surface of the substrate such that the first fluid meniscus is spaced apart from the second fluid meniscus by a transition region. A saturated gas chemistry is applied to the surface of the substrate at the transition region. The saturated gas chemistry is configured to maintain moisture in the transition region so as to prevent drying of the surface of the substrate in the transition region, before the second fluid meniscus is applied to the surface of the substrate.

Abstract: This invention relates to cleaning compositions comprising organic catalysts having enhanced enzyme compatibility and processes for making and using such cleaning compositions.