Abstract: A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

Abstract: Methods and apparatuses are disclosed for rinsing the interface area of a liquid and air boundary after a substrate cleaning process using gas barrier. In some embodiments, a protective chuck having an inner gas ring and an outer liquid ring can be used to clean the area under the edge of the protective chuck. A gas flowing outward from the gas ring can enable a liquid to flow outward from the liquid ring, rinsing the outer portion of the protective chuck. The interface rinsing process can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A cover for a pedicure spa containing an automatic sanitation apparatus is disclosed. When activated, the cover automatically sprays disinfectant in a circular motion from a nozzle on the bottom of the cover. The interior surfaces of the pedicure basin are treated with the disinfectant solution. The pedicure basin is thereby efficiently and thoroughly sanitized.

Abstract: A method for cleaning a drain line of a dialysis machine downstream of a filtration unit. The method includes closing inlet and outlet valves of the filtration unit, and closing a bypass valve along a bypass line that connects a source line to a drain line. The method also includes configuring the balancing chamber such that flow is permitted only via the drain line, flowing an amount of a cleaning agent into the drain line through a cleaning agent valve, and rinsing the cleaning agent from the drain line with a rinse fluid.

Abstract: The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate W is subjected to an ultrasonic cleaning process. The step of generating ultrasonic waves includes a step of generating ultrasonic waves in the cleaning tank while the cleaning liquid is being supplied into the cleaning tank. A supply rate at which the cleaning liquid is supplied into the cleaning tank at a certain timing in the step of generating ultrasonic waves differs from a supply rate at which the cleaning liquid is supplied into the cleaning tank at another timing in the step of generating ultrasonic waves.

Abstract: Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. A method is presented which applies a minimum volume of the composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: A liquid processing apparatus, capable of preventing a cleaning solution from remaining on a lifting member of a target object, thereby preventing an attachment of a cleaning solution to an opposite surface of a target object, and preventing an inflow of the cleaning solution into an inert gas supply part to efficiently supply the inert gas to the object, is disclosed. The liquid processing apparatus includes a hollow-shaped support plate to support an object, a hollow-shaped rotary shaft fixedly connected to the support plate, a rotary drive part to rotate the rotary shaft in a predetermined rotating direction, and a lift pin plate arranged in a hollow of the support plate to have lift pins supporting a main body and the processed object. A cleaning solution supply part to supply a cleaning solution and an inert gas supply part to supply an inert gas are extended in a hollow of the rotary shaft.

Abstract: The present invention relates to a method for cleaning an object comprising the steps: (a) distributing to the object a first soak solution comprising at least one surfactant and at least one enzyme followed by a first soak period wherein the concentrations of the at least one surfactant and the at least one enzyme are higher relative to their concentrations in a subsequent wash solution; (b) adding to the object a second soak solution comprising at least one component that is different from any of the components comprised in the soak solution of (a) followed by a second soak period; (c) furthermore adding to the object water to obtain a wash solution followed by a wash period; and (d) rinsing the object; wherein step (b) is conducted either before or after step (c), and wherein said method has a wash performance corresponding to any of (i) a Relative Wash Performance (RWP) of at least 1; (ii) a Process Related Cleaning Index (PRCI) of more than 1; or (iii) a Relative Wash Performance (RWP) of at least 1 and

Abstract: The present invention is directed to fabric and/or home care compositions comprising oils and a polymeric cationic emulsifier, the process to obtain said emulsions and the use of said emulsions in fabric and/or home care compositions and the use of said fabric and/or home care compositions. Such fabric and/or home care compositions provide excellent cleaning and/or treatment properties.

Abstract: To provide a liquid processing apparatus capable of processing substrates with a high throughput with the lesser number of nozzles for chemical-liquid, when the substrates that are horizontally held in cup bodies are liquid-processed by supplying a chemical liquid to the substrates. Taking a developing process as an example of a liquid process, two-types of developing nozzles are prepared for two types of developing methods. The developing nozzle, which is used in the method in which the nozzle is engaged with the process for a longer period of time, is individually disposed on each of a first processing module 1 and a second processing module 2. On the other hand, the developing nozzle, which is used in the method in which the nozzle is engaged with the process for a shorter period of time, is used in common in the first liquid processing module 1 and the second liquid processing module 2. The common developing nozzle is configured to wait on an intermediate position between the modules 1 and 2.

Abstract: The present invention provides a substrate processing system in which a processing liquid is supplied to a substrate W from a processing nozzle 50a situated above the substrate W so as to process the substrate W, and which makes it possible to prevent unintended dripping of the processing liquid from the processing nozzle. A substrate processing system 20 comprises a processing nozzle 50a capable of supplying a processing liquid to a substrate to be processed, an arm 54 supporting the processing nozzle, and droplet removing nozzles 60, 62 capable of blowing a gas to the processing nozzle. The arm is movable between a processing position and a waiting position, the processing nozzle being above a substrate when the arm is in the waiting position and being outside a substrate when the arm is in the processing position. The droplet removing nozzles are so situated that they are in the vicinity of the processing nozzle when the arm is in the waiting position.

Abstract: In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed.

Abstract: Disclosed are a liquid processing device, and a liquid processing method. The liquid processing method includes a first process that includes supplying a first processing liquid to the substrate and discharging the first processing liquid within the processing space from a first discharge path, a second process that includes supplying a second processing liquid to the substrate and discharging the second processing liquid within the processing space from the second discharge path, and after stop supplying of the first processing liquid and prior to beginning of the second process, a nozzle switching operation switching from the first nozzle to the second nozzle and a discharge mechanism switching operation switching from the first discharge path to the second discharge path are performed.

Abstract: The purpose of the present invention is to provide a container sterilization method, washing method, and system which retain food hygiene manufacturing standards and a required production line speed, as well as reducing the amount of treatment fluids used such as pharmaceutical fluid, hot water and aseptic water. The container sterilization method and washing method of the present invention is a method in which a container is sterilized/washed using a treatment fluid, and the sterilization step and/or washing step are divided into at least two parts. By storing and pumping upwards the treatment fluid supplied from one part of the divided sterilization or washing step after use, the treatment fluid can be supplied in series to the other part of the same divided sterilization or washing step.

Abstract: This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer; and performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.

Abstract: A method for removing painted markings is provided that includes the step of applying a paint removal agent to a painted marking on a surface. A covering may be applied to the paint removal agent. Further, a fluid may be applied to the covering as the covering covers the paint removal agent to effect removal of the painted marking, the paint removal agent, and the covering.

Abstract: A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Abstract: Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Abstract: In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

Abstract: A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters.

Abstract: A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas that includes one or more of H2, D2, and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.

Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract: An electronic material cleaning system includes a chemical cleaning means, a wet cleaning means and a single-wafer cleaning apparatus. The chemical cleaning means comprises a functional chemical storage tank and an electrolytic reaction apparatus connected to the functional chemical storage tank via a concentrated sulfuric acid electrolysis line. The functional chemical storage tank can supply a functional chemical to the single-wafer cleaning apparatus via a functional chemical supply line. The wet cleaning means comprises a pure water supply line, a nitrogen gas supply line connected to a nitrogen gas source and an internal mixing type two-fluid nozzle connected respectively to the pure water supply line and the nitrogen gas supply line. Droplets generated from a nitrogen gas and ultrapure water can be sprayed from the tip of the two-fluid nozzle.

Abstract: A method and device for the pretreatment of polymer surfaces of components to be painted. At least one polymer surface of at least one component is preheated to a temperature that minimizes condensation on the component when the component is subsequently cleaned inside a pretreatment cell and then treated with an oxidizing flame. The cleaning of the polymer surface as well as the treatment of the polymer surface with an oxidizing flame are performed inside the same pretreatment cell.

Abstract: A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures and a pre-treatment solution prior to the conventional CIP cleaning process. The pre-treatment step improves the degree of softening of the soil, and thus facilitates its removal. The pre-treatment solution can be a strong acidic solution, a strong alkaline solution, or comprise a penetrant. A preferred strong acidic solution is an acid peroxide solution. In some embodiments, the pre-treatment may include no strong alkali or acid ingredient; rather, the penetrant provides acceptable levels of pre-treatment.

Abstract: The present application relates to encapsulated, preformed peracids and products comprising such encapsulates, as well as processes for making and using such encapsulates and products comprising such encapsulates. Such products deliver bleaching that results in superior whiteness and stain removal without the stability issues that are normally associated with certain bleaching systems.

Abstract: A method for cleaning wafer after chemical mechanical planarization that includes placing the wafer in the wafer holder and rotating the wafer holder and the wafer simultaneously, cleaning with chemicals by providing the wafer surface with chemical detergent through the detergent supply cantilever that keeps a certain distance away from the wafer surface, cleaning with deionized water by providing the wafer surface with deionized water through the detergent supply cantilever to remove the chemical detergent and cleaning products. The method also includes the second clean for better cleaning effect and drying the wafer out. According to the wafer cleaning method, the non-contact detergent and deionized water supply cantilever used for wafer cleaning reduces or eliminates the possible problems in making macro scratches on wafer surface in the scrubbing process and increases the yield for wafer devices.

Abstract: The invention provides a method for cleaning a soiled substrate, the method comprising the treatment of the moistened substrate with a formulation comprising a multiplicity of polymeric particles, wherein the polymeric particles are applied in combination with a detergent formulation, the method being characterised in that the detergent formulation is divided into its sepcrate chemical constituents and these chemical constituents are added at different times during the wash cycle. The method allows for improved cleaning with reduced overall chemical loading, and facilitates addition of the more expensive parts of the formulations when they are most effective for cleaning performance, thereby providing considerable cost savings in comparison with conventional all-in-one detergent formulations. A method for cleaning the polymeric particles is also provided.

Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.

Abstract: The present invention increases a number of target reaction containers from one into many. Coordinated with increased reaction times, total reaction volume is increased. By modifying an affinitive column of an automatic synthesis system, a production in a single batch is increased. The products obtained can be conformed to quality check specifications with cost saved.

Abstract: When the inner surface of containers conveyed in an inverted posture is sterilized, the sterilization efficiency can be increased, the amount of sterilizing fluid used can be reduced, the sterilization time and washing time can be shortened, the number of drive components of the apparatus can be reduced and the apparatus can be simplified and reduced in cost. A non-inserted nozzle 20 is disposed at a distance of 1-50 mm below the lower end surface 52 of a mouth of a container conveyed in an inverted posture, the sterilizing fluid is mixed with air and the sterilizing fluid is atomized and sprayed intermittently from the non-inserted nozzle toward the inside of the container.

Abstract: The present invention relates to a process for washing a polysaccharide-based material which has been subjected to oxidation by at least one oxidizing agent, the said process comprising a first stage of washing with a first densified fluid which is inert with regard to the said oxidizing agent, characterized in that the first stage is followed by a second stage of washing with a washing composition comprising at least one second inert densified fluid and at least one alcohol. The said process according to the invention can additionally comprise a third stage of washing with a third inert densified fluid in order to remove the said alcohol deposited on the said polysaccharide-based material during the said second washing stage. Preferably, the said inert densified fluids are supercritical carbon dioxide.

Abstract: In treating ice dams, a more aggressive de-icing agent creates an initial breach in the dam, followed by treatment with a less aggressive de-icing agent to maintain and grow the breach. Depending on quantities, and specific materials used, that portion of the ice dam which will be removed may be removed in several hours, several days, or a few weeks, also depending on the aggressiveness of the less aggressive agent. Where moderately aggressive de-icing agent is used as the second step, slow-acting de-icing agent can be applied as a third step. De-icing agents can be applied in any order, so long as the moderately aggressive agent and/or slow acting agent are applied soon enough to avoid re-closure of paths already created. A product combination comprises a very aggressive de-icing agent, a less aggressive agent, and instructions specifying use of both agents to breach and maintain an ice dam.

Abstract: Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Abstract: A method for cleaning a distributor plate in a fluidized bed polymerization reactor system according to one embodiment includes, in a first mode, operating with about a normal, baseline value of superficial gas velocity in a fluidized bed polymerization reactor system having a reactor vessel, a recycle line, and a distributor plate in the reactor vessel near an inlet of the reactor vessel. In a second mode, the superficial gas velocity is increased above the baseline value of the first mode to a level sufficient to raise the temperature of the cycle gas at the inlet above an average temperature of the cycle gas at the inlet in the first mode, and to a level sufficient to dislodge foulant from holes in the distributor plate.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: A cleaning method is provided for brush cleaning a surface of a substrate. The method comprises scrubbing a first surface of the substrate with a brush having a first surface geometry; and then scrubbing the first surface of the substrate with a brush having a second surface geometry, wherein the first and the second surface geometries are different. Numerous other aspects are provided.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Abstract: A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates.

Abstract: Apparatus and methods are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide an in-situ reclaim approach that utilizes condensing mechanisms to reclaim evaporated solvent components. In these embodiments, the condensing can occur within a proximity head itself and/or along a vacuum line running from the proximity head to a vacuum tank. Other embodiments of the present invention provide an in-situ reclaim approach that prevents the evaporation of solvents at the onset by maintaining appropriate equilibrium gas phase concentrations between the liquid chemistries and gases used to process wafer surfaces.

Abstract: A substrate processing apparatus includes liquid tanks, a conveyor mechanism that dips multiple semiconductor substrates, arranged with provision of spaces, collectively into liquids in the liquid tanks, and water vapor spray nozzles disposed in gaps between the multiple semiconductor substrates so as to face rear surfaces of the semiconductor substrates. Heated water vapor is sprayed out of the water vapor spray nozzles onto the respective rear surfaces of the multiple semiconductor substrates prior to dipping the semiconductor substrates into the liquid in the liquid tanks.

Abstract: A process is provided for removing polymeric fouling on process equipment surfaces to restore the efficiency of such equipment. This is accomplished by contacting the fouled equipment with a solvent comprising at least one non-aromatic hydrocarbon compound, or a mixture of one or more non-aromatic organic compounds and one or more aromatic hydrocarbon compounds, for a period of time sufficient to remove the polymeric fouling.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A process for removing carbonaceous deposits on surfaces of catalysts and plant parts by treating the deposits with a superheated stream of steam admixed at least temporarily with an oxygenous gas is provided, which involves, in each case monitoring the offgas CO2 content after condensation of the steam, at a temperature of at least 300° C.: (a) treating the carbonaceous deposits with superheated steam at a temperature of at least 300° C. until the CO2 content of the offgas has exceeded a maximum; (b) then, with further supply of superheated steam, commencing oxygen supply, the amount of oxygen supplied being adjusted such that the CO2 content in the offgas decreases further until it has fallen to a value of <1% by volume; and then (c) ending the supply of superheated steam and passing an oxygenous gas over remaining amounts of carbonaceous deposits until the deposits have been virtually removed.

Abstract: A drying apparatus has a casing, a cavity formed in the casing for receiving an object, a fan located in the casing and creating an airflow, and at least one slot-like opening communicating with the fan and arranged in the casing so as to direct an airflow transversely across the cavity. The slot-like opening has a maximum width which is no greater than 0.8 mm. This produces a very narrow, high velocity, high pressure airflow which is capable of drying an object efficiently and quickly and is suitable for use in a hand dryer.

Abstract: Methods and apparatus for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing electrorheological (ER) and magnetorheological (MR) fluids to remove contaminant residual particles from the substrate surface are provided.

Abstract: A method for carrying out a dishwashing cycle in a household dishwasher includes performing a wash step and dispensing an amount of a combination product from a dispenser during the wash step. The combination product includes a rinse agent and a cleaning agent. The method also includes performing a rinse step and dispensing an amount of the combination product from the dispenser during the rinse step.