Abstract: A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.

Abstract: A device and method that cleans microwave ovens through a chemical action, specifically to an agent that is placed into the microwave oven, and then activated by operating the oven for a period of time. Different embodiments include a devise composed of an open cell container filled with solution; an open cell container with an attached sponge(s) and filled with solution; and a sponge that contains a cleaning solution in hydrant or dehydrated form. In some of the described embodiments, the devise has a tear off membrane seal to maintain the solution within the cell prior to use. Another embodiment described has a bottle hanger attached to a cell. All embodiments maintain a process to absorb excess microwave energy.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.

Abstract: By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

Abstract: An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.

Abstract: An apparatus and a method for drying washed objects being capable of drying the objects in a reduced period of time, effectively preventing contamination of the objects, and preventing energy loss are provided. The apparatus for drying washed objects includes a drying tank having an opening on the upper portion thereof so that the washed objects can be placed or taken out from above, and a rinsing tank formed integrally with the drying tank, and is capable of being sealed hermetically by closing the openable and closable lid. The drying tank includes a mist-straightening vane for supplying organic solvent mist at normal temperatures to the washed objects, so that the washed objects are dried by organic solvent mist emitted from the mist-straightening vane.

Abstract: A process and system for conditioning a bulk container for ultra-high purity liquefied gas. Vapor is generated in the container from a conditioning quantity of the ultra-high purity liquefied gas by imposing a temperature difference on the container so that the vapor condenses when a temperature difference is achieved. The resulting liquid reflux, e.g., the condensed liquid drips or flows back to the conditioning quantity of the liquified gas, washes or removes contaminants, e.g., particles, metal and moisture, from the interior surface of the container. A portion of the vapor is vented from the container for reclamation. The used conditioning liquid may also be reclaimed.

Abstract: A substrate treatment assembly for treating a work object on a surface of a substrate by supplying to the work object a wet ozone-containing gas wetted with a treatment solution includes a substrate heating device for maintaining a substrate at a temperature higher than room temperature, a wetting device for producing a wet ozone-containing gas by wetting an ozone-containing gas with a treatment solution, a supply device for supplying the wet ozone-containing gas to a work object on a surface of the substrate, a gas conduit connecting the wetting device to the supply device, and a heating device for heating the wet ozone-containing gas to a temperature approximately equal to or greater than the temperature of the substrate.

Abstract: A cleaning apparatus and a cleaning method for cleaning a object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A method of treating contact lenses made from polymerizable materials by providing supercritical fluids to the lenses.

Abstract: An apparatus adapted to clean an exposed surface of a microstructure device such as a disc or head for a disc drive. The apparatus includes a fixture with a mounting surface adapted to receive the microstructure device. A cleaning fluid covers the exposed surface. A slider bearing coupled to a resilient mount flies over the exposed surface. A cleaning line on the exposed surface adjacent the slider bearing is subject to flow of the cleaning fluid. The flow can be generated by relative motion between the device and the slider bearing or generated by a nozzle.

Abstract: A system for stripping an optical fiber includes a source of air and means for generating very short bursts of air. A heater heats the bursts of air to a temperature sufficient to remove the outer coating from an optical fiber, while maintaining the air isolated from the heat source. A single burst of heated air removes the outer coating of an optical fiber, within less than about one second. A series of closely spaced bursts or a prolonged burst of heated air may be used to remove an expanded length of fiber coating. Stripping may include translation of the fiber or the heater or portions thereof. The stripper may be configured to strip several loaded fibers or a single fiber.

Abstract: A system and method are provided for using an organic solvent to clean chamber parts used in semiconductor manufacturing. The chamber parts are exposed to the solvent using a dipping system or a vapor contact system in order to soften or dissolve the organic polymers. The solvent may be heated up to a temperature of 100° C. The organic cleaning solvent may be a pyrrole-based, amine-based, fluoro/ether-based or ether-based solvent. Additionally, a system and method are provided for establishing criteria to verify that the chamber parts are clean with respect to organic, metallic and particulate impurities and establishing criteria to verify that the physical surface morphology remains intact.

Abstract: A substrate processing apparatus and a substrate processing method are provided wherein particles etc. adhering to a substrate after processing can be reduced.

Abstract: Disclosed are methods of cleaning articles of manufacture using hydrofluorocarbon and hydrochlorofluorocarbon fluids. The methods comprise generally the steps of (a) providing a hydrofluorocarbon and/or hydrochlorofluorocarbon fluid in liquid or supercritical state; (b) contacting an article of manufacture with said fluid; and (c) removing substantially all of said fluid from said article of manufacture.

Abstract: In order to remove impurities, especially liquids (5) and/or particles (4) from surfaces of plate-shaped workpieces (2) contaminated or wetted with liquid (5), at least one wiping element (3) is provided which moves with respect to the surface (2a) the wiping element (3) to be cleaned and contacts this surface (2a). The wiping element (3) is cooled down so that the liquid (5) coming into contact with this wiping element (3) and bristles (8) preferably provided thereon assumes a higher viscosity or even solidifies and consequently remains adhered together with the particles (4) contained in the liquid (5) to the wiping element (3) or its bristles (8). This cleaning principle can be assisted and influenced by heating of the surface of workpiece (2) upstream of the wiping element or elements (3) in the feed direction.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: According to a supercritical drying method of this invention, a substrate having a pattern is dipped in water and rinsed with water. Then, the substrate is placed in the reaction chamber of a predetermined sealable vessel, and surfactant-added liquid carbon dioxide is introduced into the reaction chamber. The substrate is dipped in surfactant-added liquid carbon dioxide, and liquid carbon dioxide is changed to the supercritical state. After that, supercritical carbon dioxide is gasified.

Abstract: The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH4OH) and hydrogen peroxide (H2O2) at a temperature maintained between 40° C. to 70° C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.

Abstract: A cleaning system that utilizes an organic cleaning solvent and pressurized fluid solvent is disclosed. The system has no conventional evaporative hot air drying cycle. Instead, the system utilizes the solubility of the organic solvent in pressurized fluid solvent as well as the physical properties of pressurized fluid solvent. After an organic solvent cleaning cycle, the solvent is extracted from the textiles at high speed in a rotating drum in the same way conventional solvents are extracted from textiles in conventional evaporative hot air dry cleaning machines. Instead of proceeding to a conventional drying cycle, the extracted textiles are then immersed in pressurized fluid solvent to extract the residual organic solvent from the textiles. This is possible because the organic solvent is soluble in pressurized fluid solvent. After the textiles are immersed in pressurized fluid solvent, pressurized fluid solvent is pumped from the drum.

Abstract: A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.

Abstract: A method of removing Chemical Mechanical Polishing (CMP) residue from a semiconductor substrate is disclosed. The semiconductor substrate with the CMP residue on a surface is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a solvent are introduced into the pressure chamber. The supercritical carbon dioxide and the chemical are maintained in contact with the semiconductor substrate until the CMP residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: The present invention increases the safety of a reactor for generating water vapor from oxygen and hydrogen, provides ultra-pure water vapor in an amount necessary for practical use safely, stably and continuously, provides ultra-pure water vapor concentrations to nearly 100 percent without the need of an inert transporting gas, and provides a catalyst with long term, high catalytic activity within the reactor. Specifically, the system comprises a catalyst vessel and a plurality of sorption vessels. The catalyst vessel is made of a heat-resistant material and includes an inlet and an outlet for water vapor and inert gas mixture, a heat source, and has a platinum or palladium catalyst within the catalyst vessel. The sorption vessels are made of a heat-resistant material and includes an inlet and an outlet for water vapor and inert gas mixture, a heat source, and has a molecular sieve water vapor sorption material within the sorption vessel.

Abstract: The present invention is directed to methods for cleaning films and particulates from the compressor section and combustion contaminants from the combustion and turbine sections of a combustion turbine. Particulate films and contaminants adhering to the internal components of the compressor section of a turbine are readily removed by forcing a mist comprising a cleaning solution such as an aqueous surfactant solution through the compressor section. Contaminants resulting from fuel combustion and deposited in the combustion and turbine sections are removed by forcing a mist comprising a second cleaning solution through those sections. The second solution typically comprises an aqueous acid solution optionally including a corrosion inhibitor. The compressor section must be isolated from such acid solutions, e.g. by continuing to force the misted surfactant solution through the compressor section prior to and simultaneously with forcing the misted acid solution through the combustion section.

Abstract: A workpiece or substrate is placed in a support in a reaction chamber. A heated process liquid is sprayed onto the substrate. The thickness of the layer of process liquid formed on the substrate is controlled, e.g., by spinning the substrate. Ozone is introduced into the reaction chamber by injection into the liquid or into the reaction chamber, while the temperature of the substrate is controlled, to chemically process the substrate. The substrate is then rinsed and dried.

Abstract: A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

Abstract: A process for treating an electronic component wherein the electronic component is exposed to a heated solvent and subsequently exposed to an ozonated process fluid. The electronic component is optionally exposed to the heated solvent by exposing the electronic component to a passing layer of heated solvent. An apparatus for treating electronic components with a heated solvent and an ozonated process fluid is also provided.

Abstract: A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance can be supplied thereby creating at least locally a sharply defined liquid-vapor boundary. The gaseous substance and the liquid can be selected such that the gaseous substance is miscible with the liquid and when mixed with the liquid yields a mixture having a surface tension lower than that of the liquid. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-vapor boundary over said substrate thereby removing said liquid from said substrate.

Abstract: A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Abstract: A method of cleaning substrates is provided. Prior to, during or prior to and during a cleaning process, fluid is applied to a substrate surface to form a fluid film thereon. Ice crystals are introduced into the fluid film on the substrate surface. The ice crystals have a temperature that is lower than the temperature of the fluid such that the fluid changes the ice crystals into a gaseous state to form a pulse generated in the fluid film. The depth of penetration of the ice crystals into the fluid film is controlled such that the ice crystals do not strike the substrate surface. The substrate surface is cleaned with the pulse.

Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.

Abstract: A portable, diver-operated cryogenic freezing unit cleans surfaces underwater. A housing has a first chamber that contains cryogenic liquid, such as liquid nitrogen, and a second chamber is disposed adjacent to an end portion that fits about contaminating matter on a surface underwater. A valve vents cryogenic liquid from the first chamber to expand as gas in the second chamber. The vented cryogenic liquid and gas freeze a slug of water and the contaminating matter on the surface within the end portion. The housing is bent, twisted or otherwise displaced to break or pry-away and remove the frozen slug of water and contaminating matter from the surface to thereby clean it. A method of cleaning a surface underwater using the cryogenic freezing unit is described.

Abstract: A method for the production of a cleaning agent and a solvent carrier with reduced toxicity resulting from lower isopropyl bromide (2-bromopropane) content will be described. The cleaning agents are effective for removal of various soils but have a lower tendency to create health problems upon inhalation.

Abstract: A portable, diver-operated cryogenic freezing unit cleans surfaces underwater. A housing has a first chamber that contains cryogenic liquid, such as liquid nitrogen, and a second chamber is disposed adjacent to an end portion that fits about contaminating matter on a surface underwater. A valve vents cryogenic liquid from the first chamber to expand as gas in the second chamber. The vented cryogenic liquid and gas freeze a slug of water and the contaminating matter on the surface within the end portion. The housing is bent, twisted or otherwise displaced to break or pry-away and remove the frozen slug of water and contaminating matter from the surface to thereby clean it. A method of cleaning a surface underwater using the cryogenic freezing unit is described.

Abstract: A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

Abstract: A composition and apparatus and method of using the composition for aqueous spray descaling or conditioning of scale or oxide on metal surfaces, especially stainless steel strip or the like, in one embodiment, although it can be used to descale or condition oxide or scale on other work pieces such as metal bar, or even discrete objects. An aqueous solution having a base composition of an alkali metal hydroxide, such as sodium hydroxide, potassium hydroxide, or a mixture of alkali metal hydroxides such as sodium hydroxide and potassium hydroxide is used. The aqueous solution may contain certain additives to improve the descaling performance of the salt. In one embodiment, the solution is used to condition the scale or surface oxide on a strip of stainless steel. The strip of steel is at a temperature between the melting point of the alkali metal hydroxide in anhydrous form and a temperature at which the Leidenfrost effect appears.

Abstract: A method of and an apparatus for drying a wafer using the Marangoni effect quickly forms an isopropyl alcohol layer on a cleaning liquid in which the wafer is submerged. The isopropyl alcohol is first heated and then supplied in a fluid state onto the cleaning liquid. The isopropyl alcohol liquid thus diffuses rapidly to form the isopropyl alcohol layer. The wafer is thoroughly dried by removing it from the cleaning liquid through the isopropyl alcohol while only supplying more of the heated nitrogen gas into the ambient above the cleaning liquid.

Abstract: A method and apparatus for removing a toxic contaminant from porous material by placing the material and a fluid solvent for the toxic in a drum and rotating the drum around its horizontal axis. Also provided is apparatus for placing the drum in a sealable container and sealing the container during the decontamination cycle.

Abstract: A method and system for cleaning a metal article. The system is used to employ a method that comprises placing the article in a means defining a chamber; subjecting the article to a gaseous atmosphere in the means defining a chamber, where the gaseous atmosphere consisting essentially of carbon, hydrogen, and fluorine; and subjecting the article to the gaseous atmosphere at a temperature in a range from about 815° C. to about 1100° C. to clean the article.

Abstract: To clean a semiconductor wafer without using a harmful liquid chemical solution such as piranha and organic solvent

Abstract: The decontamination of PCB-containing transformers to obtain treated transformers containing less than 50 parts per million (ppm) polychlorinated biphenyls (PCB) can be achieved using a method wherein the transformer is initially drained of all PCBs; then the core/coil assembly is removed. The internal surfaces of the transformer are then cleaned using a solvent. Finally, a new core/coil assembly is installed. The method is simple and can be completed within a substantially shorter period of time than methods known in the art.

Abstract: The invention provides a solvent mixture including n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: A system for stripping an optical fiber includes a source air, and means for generating very short bursts of air. A heater heats the bursts of air to a temperature sufficient to remove the outer coating from an optical fiber, while maintaining the air isolated from the heat source. The heater includes a heater core that includes a heat generating element such as a conductive filament, and a heat chamber enclosed within the heater core. A spiral-shaped air conduit surrounds the outer surface of the heater core, and communicates with the heat chamber. Upon injection of air into the conduit, heat is transferred to the air from the heat generating element while the air flows through the air conduit and into and out of the chamber. A single burst of heated air removes the outer coating of an optical fiber, within less than one second.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.

Abstract: A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.