Abstract: A solar cell is shown. The solar cell includes a semiconductor substrate of a first conductive type; a first amorphous semiconductor layer including a crystalline portion; a first electrode portion on the semiconductor substrate; and a second electrode portion on the semiconductor substrate.

Abstract: The objective of this invention is to use chemical additives to increase the rate of deposition processes for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H), and improve the electrical current generating capability of the deposited films for photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Abstract: A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.

Abstract: A thin film solar cell including a first substrate, a first electrode on the first substrate, an upper surface of the first electrode having a plurality of irregularities, an absorption layer on the first electrode, the absorption layer including amorphous silicon layers and microcrystal silicon layers contacting the first electrode at an angle relative to the first substrate, a second electrode on the absorption layer, and a second substrate on the second electrode.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate that contains first impurities of a first conductive type and is formed of a crystalline semiconductor, a first field region that is positioned on an incident surface of the substrate and contains second impurities of a second conductive type, an emitter region that contains third impurities of a third conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

Abstract: A solar cell is provided, including a substrate, a first electrode, a second electrode, an n-type semiconductor layer and a p-type semiconductor layer. The first electrode is disposed on the substrate. The second electrode is disposed between the first electrode and the substrate. The n-type semiconductor layer is disposed between the first electrode and the second electrode. The material of the n-type semiconductor layer is microcrystalline silicon (?c-Si) or polysilicon. The p-type semiconductor layer is disposed between the first electrode and the n-type semiconductor layer.

Abstract: Surface nucleated glass ceramics and more particularly photovoltaic devices comprising surface nucleated glass ceramics as the superstrate in the devices are described.

Abstract: A solar cell is discussed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and at least one photoelectric transformation unit positioned between the first electrode and the second electrode. The at least one photoelectric transformation unit includes a p-type semiconductor layer, an intrinsic (i-type) semiconductor layer, an n-type semiconductor layer, and a buffer layer positioned between the p-type semiconductor layer and the i-type semiconductor layer. A hydrogen content of the buffer layer is more than a hydrogen content of the i-type semiconductor layer.

Abstract: Photovoltaic bituminous tile for photovoltaic roof, production method of the tile and laying method of the roof, in which: —the photovoltaic bituminous tile includes the photovoltaic module that integrates at least one amorphous silicon triple junction solar cell and electric connecting means, coupled to a bituminous base by means of a sticking phase; —and in which, the installation of the photovoltaic roof requires two phases; a first phase in which the photovoltaic bituminous tiles are placed, each provided with electric connecting means, placed side-by-side to the other at the lateral edge and surmounted near the upper longitudinal edge, and, at least at the connection of each tile placed side-by-side to the other, with at least one angular ‘L’ shaped section to which a covering is joinable; the second phase performing the electrical connections with protection of the connections and of the connecting means by means of application of the protection covering.

Abstract: A photovoltaic device includes a built-in electric field generated by electric dipoles of nanoparticles embedded in a photoconducting host.

Abstract: A stacked photovoltaic element comprising a plurality of unit photovoltaic elements each composed of a pn- or pin-junction, connected to each other in series, wherein a zinc oxide layer is provided at least one position between the unit photovoltaic elements, and the zinc oxide layer has resitivity varying in the thickness direction.

Abstract: In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.

Abstract: An object of the present invention is to provide a photoelectric conversion device having a high power generation efficiency. A photoelectric conversion device includes a light-transmitting conductive part including a light incident surface and a light output surface, a semiconductor part formed on the light output surface, an anti-reflection coating formed on the semiconductor part, and a dye-sensitized photoelectric conversion body including a charge transport part and a dye that receives a charge from the charge transport part. The charge transport part is in contact with the anti-reflection coating. The anti-reflection coating has a bandgap larger than that of the semiconductor part.

Abstract: The present invention discloses a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A first current output region formed at the positive electrode of the thin film solar cell module. A first current output element is disposed in the first current output region, and the absorber layer further comprises at least a first gap which is disposed in the first current output region to increase the contact between the first electrode layer and the second electrode layer. The useless current, the resistance and the heat generated there are reduced. The heat generated there is also reduced.

Abstract: Disclosed are a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A current output region with a current output element disposed therein is formed at the thin film solar cell module. The absorber layer in the current output region is removed through a mask, thereby making the first electrode layer contacts directly there with the second electrode layer. The current output region can be formed at the positive electrode, the negative electrode, or both positive electrode and negative electrode simultaneously, of the thin film solar cell module, thereby increasing the contact area between the first electrode layer and the second electrode layer at the positive electrode and the negative electrode. The useless current, the resistance and the heat generated there are reduced.

Abstract: To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.

Abstract: Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx).

Abstract: A solar cell including an insulation substrate, a buffer layer disposed on the insulation substrate, a first electrode disposed on the buffer layer, a first polycrystalline semiconductor layer disposed on the first electrode and including first impurities, a photo-absorptive layer disposed on the first polycrystalline semiconductor layer, a second semiconductor layer disposed on the photo-absorptive layer and including second impurities, and a second electrode disposed on the second semiconductor layer.

Abstract: To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.

Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to methods for making materials using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. This invention further relates to methods for making a CIGS, CIS or CGS material by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: A method of forming a conducting polymer based photovoltaic device including: (a) providing a transparent first electrode; (b) providing the transparent first electrode with a layer of metal oxide nanoparticles, wherein the metal oxide is selected from the group consisting of: TiO2, TiOx, and ZnO; (c) providing the layer of metal oxide nanoparticles with a bulk hetero junction layer including metal oxide nanoparticles and a hole conducting polymer containing thermocleavable groups, wherein the metal oxide is selected from the group consisting of: TiO2, TiOx, CeO2, Nb2O5 and ZnO; (d) heating the bulk heterojunction layer, to cleave the thermally cleavable groups to produce an insoluble hole containing polymer; (e) providing the bulk heterojunction layer with a hole transporting layer; and (f) providing the hole transporting layer with a second electrode. Also a conducting polymer based photovoltaic device, and polymeric compounds suitable for use in such devices and methods.

Abstract: A solar cell includes a semiconductor substrate, a p-type organic semiconductor layer disposed on a first region of a rear surface of the semiconductor substrate, an n-type semiconductor layer disposed on a second region of the rear surface of the semiconductor substrate which is different than the first region, a rear electrode disposed on a rear surface of the p-type organic semiconductor layer, a first grid electrode disposed on a rear surface of the rear electrode, and a second grid electrode disposed on a rear surface of the n-type semiconductor layer.

Abstract: This invention relates to processes for materials using compounds, polymeric compounds, and compositions for semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film CAIGS, CAIS, and CAGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C. in an inert atmosphere.

Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making AIGS, AIS or AGS materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: A photosensitizer attaining high incident photon-to-current conversion efficiency and having long durability life and a solar cell using the photosensitizer are provided. A solar cell 1 includes: a semiconductor electrode 10 including a substrate 18 having a conductive film 16 formed on its surface and a porous semiconductor layer 20 formed on the substrate 18; a counter electrode 12 including a substrate 30 having a conductive film 28 formed on its surface; and a carrier transport layer 14 including conductive material, posed between the semiconductor electrode 10 and the counter electrode 12. The surface of porous semiconductor layer 20 is caused to carry a light absorber 22 including inorganic material 24 carrying organic molecules 26 each having an aromatic ring.

Abstract: The present invention provides a photovoltaic device having excellent environmental durability and good adhesion with a collector electrode made of metal paste. The photovoltaic device comprises an ITO film on a p-type amorphous silicon hydride film on a light incident side of the photovoltaic device and a collector electrode made of silver paste on the ITO film. A silicon oxide insulation film made of SiOx is provided on at least regions on the ITO film where the collector electrode is not formed. The thickness of the silicon oxide insulation film is about 1 to 10 times thicker than an arithmetic mean deviation (Ra) of the underlying ITO film. The silicon oxide insulation film is a film having a Si-2p peak with a full width at half maximum of 2.45 or less, which is evaluated by an X-ray photoelectron spectroscopy.

Abstract: A method of manufacturing a photovoltaic cell may include depositing a cadmium sulfide layer on a transparent conductive oxide stack; depositing a zinc-containing layer on the cadmium sulfide layer; and depositing a cadmium telluride layer on the zinc-containing layer.

Abstract: Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process wherein the sputter deposition process is a direct current sputter deposition wherein the film consists of at least 90 wt-% of an inorganic material having semiconductor properties whereby the film of the inorganic material M2 is directly deposited as crystalline structure, so that at least 50 wt-% of the deposited film has a crystalline structure wherein the source material (target) used for the sputter deposition consists of at least 80 wt-% of the inorganic material M2. wherein the inorganic material is selected from a group including binary, ternary, and quaternary compounds including sulphur, selenium, tellurium, indium, and/or germanium.

Abstract: A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

Abstract: A thin film solar cell including a substrate, a first conductive layer, a first photovoltaic layer, a second conductive layer and a crystallization layer is provided. The first conductive layer is disposed on the substrate. The first photovoltaic layer is disposed on the first conductive layer. The second conductive layer is disposed on the first photovoltaic layer. The crystallization layer is at least partially disposed between the first photovoltaic layer and the first conductive layer or between the first photovoltaic layer and the second conductive layer. A manufacturing method of the thin film solar cell is also provided.

Abstract: In aspects of the present invention, a method is disclosed to form a lamina having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.

Abstract: A method of manufacturing a crystalline silicon solar cell, subsequently including: providing a crystalline silicon substrate having a first side and a second side opposite the first side; pre-diffusing Phosphorus into a first side of the substrate to render a Phosphorus diffused layer having an initial depth; blocking the first side of the substrate; exposing a second side of the substrate to a Boron diffusion source; heating the substrate for a certain period of time and to a certain temperature so as to diffuse Boron into the second side of the substrate and to simultaneously diffuse the Phosphorus further into the substrate.

Abstract: The present invention relates to a thin film solar cell with light transmission. The thin film solar cell comprises a substrate, a front electrode layer, an absorption layer, a back electrode layer, a light-transmittance enhancing layer and an encapsulation layer, stacked in a sequence. Part of the back electrode layer is removed in depth so as to form a plurality of light-transmittance regions. Part of the light-transmittance enhancing layer and part of the encapsulation layer are disposed within each light-transmittance region. The light-transmittance enhancing layer has a refractive index between that of a first medium overlaid by the part of the light-transmittance enhancing layer disposed within each light-transmittance region and that of a second medium overlaying the part of the light-transmittance enhancing layer disposed within each light-transmittance region.

Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an electrically insulating substrate, a lower stack of microcrystalline silicon layers above the substrate, a middle stack of amorphous silicon layers above the lower stack, an upper stack of amorphous silicon layers above the middle stack, and a light transmissive cover layer above the upper stack. An energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks.

Abstract: The present invention provides a thin film photovoltaic device and a method of forming a thin film photovoltaic device. The thin film photovoltaic device has a substrate, a thin film layer formed on the substrate and first and second electrodes formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film. Upon exposure to light, the thin film layer converts light energy into electricity. According to the method, a thin film layer is formed on a substrate. A first electrode and a second electrode are formed on one side of the thin film layer. By applying an electric field over the first and second electrodes, the thin film layer is polarized in a direction parallel to the surface plane of the film.

Abstract: The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 ?m and less than 0.17 ?m, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 ?m and less than 1.0 ?m, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

Abstract: The invention relates to a solar cell that comprises a planar semiconductor substrate with a front and a back; a multitude of holes that interconnect the front and the back; and current-collecting electrical contacts that are exclusively arranged on the back. The front comprises highly doped regions and lightly doped regions of a first type such that in each case the holes are situated in a highly doped region or adjoin such a region. According to a first aspect of the invention, the highly doped regions are arranged locally around the holes. According to a second aspect of the invention, the front comprises at least one region without holes, and the highly doped regions comprise one region or several regions that extends/extend to the at least one hole-free region. The invention furthermore relates to methods for manufacturing such solar cells.

Abstract: A solar cell comprises an amorphous silicon solar cell unit in which a p-type layer, an i-type layer, and an n-type layer are laminated. The p-type layer includes a high-concentration amorphous silicon carbide layer doped with a p-type dopant and an amorphous silicon buffer layer which is substantially undoped with the p-type dopant. Then, a band gap of the amorphous silicon buffer layer is defined to be 1.65 eV or greater.

Abstract: A solar cell comprises a p-type layer, an i-type layer, and an n-type layer, the p-type layer comprises a high-absorption amorphous silicon carbide layer and a low-absorption amorphous silicon carbide layer which have different absorption coefficients with respect to light of a wavelength of 600 nm along a thickness direction, and a buffer layer is provided between the low-absorption amorphous silicon carbide layer and the i-type layer.

Abstract: A photovoltaic nanostructure according to one embodiment of the present invention includes an electrically conductive nanocable coupled to a first electrode, a second electrode extending along at least two sides of the nanocable, and a photovoltaically active p-n junction formed between the nanocable and the second electrode. A photovoltaic array according to one embodiment includes a plurality of photovoltaic nanostructures as recited above. Methods for forming nanostructures are also presented.

Abstract: A solar cell comprises a substrate configured to have a plurality of via holes and a first conductive type, an emitter layer placed in the substrate and configured to have a second conductive type opposite to the first conductive type, a plurality of first electrodes electrically coupled to the emitter layer, a plurality of current collectors electrically coupled to the first electrodes through the plurality of via holes, and a plurality of second electrodes electrically coupled to the substrate. The plurality of via holes comprises at least two via holes having different angles.

Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.

Abstract: A housing comprises a transparent exterior coating, a photoelectric conversion coating bonded with the exterior coating and a substrate molded on the photoelectric conversion coating. The photoelectric conversion coating has electrode contacts thereon. The photoelectric conversion coating is used to convert light energy to electrical energy. The disclosure also describes an electronic device using the housing and a method for making the housing there.

Abstract: A degradation-resistant photovoltaic device is provided. The device includes an active area and at least one photovoltaic cell located in the active area. The photovoltaic cell has an elongated shape with a characteristic width and a characteristic length. The characteristic length is greater than the characteristic width and an average distance from the photovoltaic cell to any edge of the active area is greater than the characteristic width.

Abstract: An apparatus for splitting water to produce hydrogen having at least one photoelectrochemical cell. The photoelectrochemical cell includes at least one water permeable photoelectrode having a light sensitive, nano-crystalline catalytic material layer, a polymer electrolyte membrane, a metallic substrate disposed between the light sensitive nano-crystalline catalytic material layer and the polymer electrolyte membrane adjacent to the polymer electrolyte membrane layer, and at least one photovoltaic device connected in series to the light sensitive nano-crystalline material layer and disposed between the light sensitive nano-crystalline catalytic material layer and the metallic substrate layer.

Abstract: A photovoltaic cell includes a substrate, a semiconductor layer stack, a reflective and conductive electrode layer, and a textured template layer. The semiconductor layer stack is disposed above the substrate. The electrode layer is located between the substrate and the semiconductor layer stack. The template layer is between the substrate and the electrode layer. The template layer includes an undulating upper surface that imparts a predetermined shape to the electrode layer. The electrode layer reflects light back into the semiconductor layer stack based on the predetermined shape of the electrode layer.

Abstract: The invention intends to provide a silicon-based thin-film photoelectric conversion device with conversion efficiency improved at low cost. Specifically, disclosed is a thin-film silicon-based photoelectric conversion device (5) comprising a crystalline photoelectric conversion unit (3), wherein one-conductivity-type semiconductor layer (31), a crystalline silicon-based photoelectric conversion layer (322), and a reverse-conductivity-type semiconductor layer (33) are sequentially stacked. This silicon thin film photoelectric conversion device (5) is also characterized in that a substantially i-type crystalline silicon intervening layer (321), which is made of a material different from that of the photoelectric conversion layer (322), is disposed between the one-conductivity-type semiconductor layer (31) and the photoelectric conversion layer (322), and the photoelectric conversion layer (322) contacts directly with the intervening layer (321).

Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid and an overlaid blanket metal reflector. A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.