Abstract: Discussed is a solar cell including a semiconductor substrate, a first tunneling layer entirely formed over a surface of the semiconductor substrate, a first conductive type area disposed on the surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive type area.

Abstract: Photovoltaic devices are driven by intense photoemission of “hot” electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Abstract: Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes: first and second electrode layers on a main surface of a substrate, separated by a space; a first semiconductor layer having a first conductivity type and containing crystal grains; a second semiconductor layer on the first semiconductor layer, having a second conductivity type different from the first conductivity type; and one or more first connection conductors on the second electrode layer, coupled to a side of the second semiconductor, and electrically connecting the second semiconductor layer to the second electrode layer. The first semiconductor layer includes: a first portion on the first electrode layer, including crystal grains having a first average size; a second portion disposed at the space on the substrate; and a third portion on the second electrode layer, including crystal grains having a second average size that is larger than the first average size.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Abstract: A thin-film solar battery includes a substrate, a first electrode, a photoelectric conversion layer, and a second electrode. The first electrode, the photoelectric conversion layer, and the second electrode are laminated on the substrate. The photoelectric conversion layer has a laminated layer structure which includes at least a p-type layer and an n-type layer. The p-type layer is formed of Cu, In, Ga, and Se, and a composition ratio of Se of the p-type layer is equal to or higher than 40 atomic % and less than 50 atomic %. The n-type layer is a compound of an element of at least one Group selected from Group 2, Group 7, and Group 12, an element of Group 13, and an element of Group 16, and contains at least In as the element of Group 13 and at least S as the element of Group 16.

Abstract: The present invention comprises a solar cell module and a method of encapsulating the module. The solar cell module comprises a rigid or flexible superstrate and/or substrate having one or more solar cells, and an encapsulant which is a cured liquid silicone encapsulant. The encapsulant composition preferably comprises a liquid diorganopolysiloxane having at least two Si-alkenyl groups per molecule, a silicone resin containing at least two alkenyl groups; a cross-linking agent in the form of a polyorganosiloxane having at least two silicon-bonded hydrogen atoms per molecule, in an amount such that the ratio of the number of moles of silicon-bonded hydrogen to the total number of moles of silicon-bonded alkenyl groups is from 0.1:1 to 5:1; and a hydrosilylation catalyst. The continuous solar cell module encapsulation process comprises uniformly applying a predetermined volume of a liquid silicone encapsulant onto a solar cell module and curing said encapsulant.

Abstract: The present invention comprises a solar cell module and a method of encapsulating the module. The solar cell module comprises a rigid or flexible superstrate and/or substrate having one or more solar cells, and an encapsulent which is a cured liquid silicone encapsulant. The encapsulant composition preferably comprises a liquid diorganopolysiloxane having at least two Si-alkenyl groups per molecule, a silicone resin containing at least two alkenyl groups; a cross-linking agent in the form of a polyorganosiloxane having at least two silicon-bonded hydrogen atoms per molecule, in an amount such that the ratio of the number of moles of silicon-bonded hydrogen to the total number of moles of silicon-bonded alkenyl groups is from 0.1:1 to 5:1; and a hydrosilylation catalyst, preferably a platinum based catalyst.

Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.

Abstract: A laminated film comprising a porous semiconductor layer, a transparent conductive layer and a transparent plastic film, wherein the porous semiconductor layer comprises crystalline titanium oxide fibers and crystalline titanium oxide fine particles, the crystalline titanium oxide fibers and the crystalline titanium oxide fine particles are substantially composed of an anatase phase and a rutile phase, the anatase phase content ratio calculated from the integral intensity ratio of X-ray diffraction is between 1.00 and 0.32, and the laminated film is used in an electrode for dye-sensitized solar cells, and the electrode and a dye-sensitized solar cell comprising the same.

Abstract: To improve the efficiency of heterostructure silicon photovoltaic devices, II-VI wide bandgap semiconductor layers can replace the TCO/doped amorphous silicon/intrinsic amorphous silicon layers on the front side or on both sides of the silicon bulk layer. For example, photovoltaic devices are described containing a first contact electrode; a first doped II-VI semiconductor layer disposed over the first contact electrode; a doped crystalline silicon layer disposed over the first doped II-VI semiconductor layer; and a second contact electrode disposed over the doped silicon layer, where one of the doped crystalline silicon layer and the first doped II-VI semiconductor layer is n-doped N and the other is p-doped.

Abstract: A method for forming a photovoltaic device includes patterning a dielectric layer on a substrate to form a patterned dielectric having local spacings between shapes and remote spacings between groups of shapes, and depositing a doped epitaxial layer over the patterned dielectric such that selective crystalline growth occurs in portions of the epitaxial layer in contact with the substrate and noncrystalline growth occurs in portions of the epitaxial layer in contact with the patterned dielectric. First metal contacts are formed over the local spacings of the patterned dielectric, and second metal contacts are formed over the remote spacings. Exposed portions of the noncrystalline growth are etched using the first and second metal contacts as an etch mask to form alternating interdigitated emitter and back contact stacks.

Abstract: The present invention provides a solar cell unit, which comprises a semiconductor plate of first-type doping or second-type doping; wherein the semiconductor plate has a first surface and a second surface opposite to the first surface; the semiconductor plate comprises a first-type doping region and second-type doping region, both the first-type doping region and the second-type doping region are located on the first surface of the semiconductor plate; a first sheet is provided on the side surface of the semiconductor plate that is adjacent to the first-type doping region, and a second sheet is provided on the side surface of the semiconductor plate that is adjacent to the second type doping region.

Abstract: Provided is a wafer for solar cell which can be produced using a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, which wafer can be used for manufacturing a solar cell with high conversion efficiency. In a wafer for solar cell before acid texturing of the present invention, produced from a polycrystalline semiconductor wafer cut out using a bonded abrasive wire, an amorphous layer does not exist, and irregularities caused due to the cutting using the bonded abrasive wire are left in at least one surface of the wafer for solar cell.

Abstract: Formulations and methods of making solar cell contacts and cells therewith are disclosed. The invention provides a photovoltaic cell comprising a front contact, a back contact, and a rear contact. The back contact comprises, prior to firing, a passivating layer onto which is applied a paste, comprising aluminum, a glass component, wherein the aluminum paste comprises, aluminum, another optional metal, a glass component, and a vehicle. The back contact comprises, prior to firing, a passivating layer onto which is applied an aluminum paste, wherein the aluminum paste comprises aluminum, a glass component, and a vehicle.

Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Abstract: A photoelectric conversion element comprising: a photoelectric conversion layer; and a plurality of metal nanoparticles arranged in the form of a two-dimensional array on the photoelectric conversion layer on its principal face side that is opposite to its light receiving face, wherein the plurality of metal nanoparticles are arranged with a particle density that is equal to or greater than 5.0×108/cm2 and is equal to or smaller than 3.0×109/cm2.

Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Abstract: A solar battery according to the embodiment of the present invention comprises a plurality of solar battery cells formed on a first area of a substrate to include a rear electrode pattern, a light-absorbing layer, a buffer layer and a front electrode layer respectively; a metal film pattern formed on a second area of the substrate to electrically connect to each a plurality of solar battery cells and space each other; and a connection unit formed between the mutually spaced metal film patterns.

Abstract: A solar cell includes a back electrode, a silicon substrate, a doped silicon layer and an upper electrode. The back electrode is located on and electrically connected to a lower surface of the silicon substrate. A number of cavities are formed on an upper surface of the silicon substrate. The doped silicon layer is located on the inside surface of the cavities. The upper electrode is located on the upper surface of the silicon substrate. The upper electrode includes a carbon nanotube structure.

Abstract: An encapsulant material with enhanced light reflectivity, a crystalline silicon photovoltaic module and a thin film photovoltaic module are provided. The encapsulant material has a porous structure therein, and an average pore diameter of the porous structure is between several hundreds of nanometers and several hundreds of micrometers, so that the light reflectance of the encapsulant material is improved. Moreover, the encapsulant material is crosslinked by a physical or chemical crosslinking method, so heat resistance thereof is improved. Therefore, the encapsulant material is suitable for the crystalline silicon photovoltaic module and the thin film photovoltaic module, so as to increase power conversion efficiency of these modules.

Abstract: Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Abstract: We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.

Abstract: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

Abstract: Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

Abstract: An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.

Abstract: The disclosure relates to apparatus and methods of photovoltaic or solar module design and fabrication. A photovoltaic (PV) module includes one or more photovoltaic cells mounted to a support, a first terminal connected to at least one of the one or more PV cells, a second terminal connected to at least one of the one or more PV cells, and a bypass line mounted to the support for bypassing the one or more PV cells. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A multilayer window structure for a solar cell comprises one or more layers where the bottom layer has an intrinsic material lattice spacing that is substantially the same as the emitter in the plane perpendicular to the direction of epitaxial growth. One or more upper layers of the window structure has progressively higher band gaps than the bottom layer and has intrinsic material lattice spacing is substantially different than the emitter intrinsic material lattice spacing.

Abstract: A photovoltaic converter device includes a photovoltaic conversion layer containing a plurality of nanoparticles in a first material in a dispersed state, wherein the nanoparticles include a second material in particles and a third material that coats the second material, the third material having a band gap E3 that is greater than a band gap E1 of the first material, and greater than a band gap E2 of the second material.

Abstract: A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: A silicon solar cell is manufactured by providing a carrier plate, and by applying a first contact pattern to the carrier plate. The first contact pattern includes a set of first laminar contacts. The silicon solar cell is further manufactured by applying a multitude of silicon slices to the first contact pattern, and by applying a second contact pattern to the multitude of silicon slices. Each first laminar contact of the set of first laminar contacts is in spatial laminar contact with maximally two silicon slices. The second contact pattern includes a set of second laminar contacts. Each second laminar contact of the set of second laminar contacts is in spatial laminar contact with maximally two silicon slices.

Abstract: The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.

Abstract: A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type.

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type; at least one first electrode on the emitter layer and electrically connected to the emitter layer; a passivation layer on the substrate, the passivation layer including a plurality of exposing portions to expose respective portions of the substrate; and an electrode conductive layer on the passivation layer, the electrode conductive layer including a plurality of second electrodes electrically connected to the respective plurality of exposing portions, wherein in each of the plurality of exposing portions, an area of an exposed surface of the substrate is greater than an area of a virtual interface that is coplanar with an interface between the substrate and the passivation layer and which is located over the exposed surface.

Abstract: A photovoltaic device which includes: a) a substrate based on a crystalline semi-conductor material; b) a first electrode which includes at least one heterojunction made on one face, referred to as the rear face, of the substrate, where this heterojunction includes a layer based on a doped amorphous semi-conductor material; and c) a second electrode. The first and second electrodes are arranged on the rear face of the substrate according to an interdigitated combs design, and where the layer includes multiple portions of the doped amorphous semi-conductor material which are unconnected and spaced apart from each other.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Abstract: The textured transparent conductive layer according to the invention is deposited on a substrate intended for a photoelectric device and exhibiting a surface morphology formed from a sequence of humps and hollows. It is characterized in that its hollows have a rounded base with a radius of more than 25 nm; the said hollows are virtually smooth, which is to say that, where they exhibit microroughnesses, these microroughnesses have a height on average of less than 5 nm; and its flanks form an angle with the plane of the substrate whose median of the absolute value is between 30° and 75°.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MB(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: A device and method for forming a photovoltaic device include forming a photovoltaic stack of layers on a transparent substrate wherein at least one layer of the photovoltaic stack of layers includes a microcrystalline layer. The microcrystalline layer is formed by purging a vacuum chamber with a gettering gas to remove contaminant species from the chamber prior to forming the microcrystalline layer. The microcrystalline layer is deposited at a vacuum base pressure of greater than about 10?2 Torr.

Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers and thin films thereof.

Abstract: A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

Abstract: A removable cover system for protecting solar cells from exposure to moisture during fabrication processes. The cover system includes a cover having a configuration that complements the configuration of a solar cell substrate to be processed in an apparatus where moisture is present. A resiliently deformable seal member attached to the cover is positionable with the cover to engage and seal the top surface of the substrate. In one embodiment, the cover is dimensioned and arranged so that the seal member engages the peripheral angled edges and corners of the substrate for preventing the ingress of moisture beneath the cover. An apparatus for fabricating a solar cell using the cover and associated method are also disclosed.

Abstract: Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A structure includes a crystalline semiconductor having at least one surface, a doped crystalline region disposed in at least one selected area of the semiconductor surface, and a dopant-containing amorphous silicon layer stack containing a same dopant as present in the doped crystalline region on at least a portion of the semiconductor surface outside the selected area, wherein the dopant-containing amorphous silicon layer stack passivates the portion of the semiconductor surface on which it is disposed.

Abstract: A solar cell is disclosed. The solar cell has a front side facing the sun during normal operation, and a back side facing away from the sun. The solar cell comprises a silicon substrate, a first polysilicon layer with a region of doped polysilicon on the back side of the substrate. The solar cell also comprises a second polysilicon layer with a second region of doped polysilicon on the back side of the silicon substrate. The second polysilicon layer at least partially covers the region of doped polysilicon. The solar cell also comprises a resistive region disposed in the first polysilicon layer. The resistive region extends from an edge of the second region of doped polysilicon. The resistive region can be formed by ion implantation of oxygen into the first polysilicon layer.

Abstract: Provided is a solar cell including a substrate of a first conductivity type, a first electrode, a dielectric layer, a region of a second conductivity type, and a second electrode. The substrate of the first conductivity type has a front surface and a back surface opposite to each other. The first electrode is disposed on the front surface. The dielectric layer has charges. The dielectric layer is disposed on the front surface and positioned at both sides of the first electrode. The region of the second conductivity type is disposed between the substrate of the first conductivity type and the first electrode, wherein the region of the second conductivity type is disposed only below the first electrode. The second electrode is disposed on the back surface.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, which is capable of improving solar-ray transmittance and dispersion efficiency by the increased effective area for absorbing the solar ray through the use of substrate with a predetermined pattern having protrusions and depressions, wherein the method comprises preparing a substrate with a predetermined pattern having protrusions and depressions on its one surface; forming a front electrode on the substrate; forming a semiconductor layer on the front electrode; and forming a rear electrode on the semiconductor layer.