Abstract: Disclosed is a cable for use in a concentrating photovoltaic module. The cable includes at least one strand wrapped with an optically pervious or reflective sheath. The pervious sheath is made of a material that exhibits a penetration rate of 90% and survives a temperature of at least 140 degrees Celsius. The reflective sheath is made of a material that exhibits a reflection rate of 95% and survives a temperature of at least 140 degrees Celsius. The cable is used to connect an anode of the concentrating photovoltaic module to a cathode of the same. The material of the reflective sheath may be isolating.

Abstract: A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.

Abstract: Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

Abstract: A solar cell is discussed. The solar cell includes a substrate made of a crystalline semiconductor, an emitter region made of a non-crystalline semiconductor forming a p-n junction with the substrate, a first passivation region positioned on the substrate and made of an oxide material, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

Abstract: A solar cell includes a crystalline semiconductor substrate containing a first impurity of a first conductive type, a first non-crystalline impurity semiconductor region directly contacting with the crystalline semiconductor substrate to form a p-n junction with the crystalline semiconductor substrate and including a first portion in which a second impurity of a second conductive type is doped with a first impurity doping concentration and a second portion in which the second impurity is doped with a second impurity doping concentration, the first impurity doping concentration being less than an impurity doping concentration of the crystalline semiconductor substrate and the second impurity doping concentration being greater than the impurity doping concentration of the crystalline semiconductor substrate, a first electrode connected to the first non-crystalline impurity semiconductor region, and a second electrode connected to the crystalline semiconductor substrate.

Abstract: A solar cell includes a substrate containing a first impurity of a first conductivity type and made of a crystalline semiconductor, an emitter region positioned on the substrate and containing a second impurity of a second conductivity type different from the first conductivity type, the emitter region being made of a non-crystalline semiconductor, a surface field region positioned on the substrate and containing a third impurity of the first conductivity type, the surface field region being made of non-crystalline semiconductor, a first electrode connected to the emitter region, and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region is made of amorphous metal silicide containing a metal material.

Abstract: A solar cell is discussed. The solar cell includes a substrate having a first conductivity type and made of a crystalline semiconductor; an emitter region having a second conductivity type opposite the first conductivity type, and forming a p-n junction with the substrate; a surface field region having the first conductivity type and being separated from the emitter region; a first electrode connected to the emitter region; and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region includes a plurality of semiconductor portions, and at least one of the plurality of semiconductor portion is a crystalline semiconductor portion.

Abstract: A method for manufacturing a solar cell (100) includes the steps of removing a resist film (50) and removing a part of an n-type amorphous semiconductor layer (12n).

Abstract: A device comprising a conversion channel including: a first end configured to accept ambient electromagnetic radiation, the ambient electromagnetic radiation having an initial frequency, a second end configured to allow the ambient electromagnetic radiation to exit, and at least two opposing walls connecting the first end and the second end, wherein the at least two opposing walls include one or more crystals, the at least two opposing walls being separated by at least one-half of a wave length; wherein when the ambient electromagnetic radiation interacts with the one or more crystals of the at least two opposing side walls, the initial frequency of the ambient electromagnetic radiation being repeatedly increased to an optimal frequency is provided. Furthermore, an associated method is also provided.

Abstract: A hybrid photovoltaic device comprising a plurality of nanostructures embedded in a matrix of a photosensitive material including one or more layers. A combination of innovative structural aspects of the hybrid photovoltaic device results in significant improvements in collection of incident light from the solar spectrum, better absorption of light, and better collection of the photo-carriers generated in response to the incident light, thereby improving efficiency of the hybrid photovoltaic device.

Abstract: The invention pertains to a method for making a solar cell module comprising solar cells connected in series, comprising the steps of: a) making in a system composed of a substrate-overlaid by a first electrode layer, itself overlaid by an active layer, a first, interruption, groove providing an interrupt in the front electrode and the active layer and a second, interconnection, groove through the active layer, the first and second grooves being positioned close to each other; b) inserting an insulating compound into the interruption groove; c) applying a lift-off compound onto the active layer at a position adjacent to the interconnection groove on the other side of the interconnection groove than the insulation groove; d) applying the second electrode; e) removing the lift-off compound and the overlaying second electrode at that position to obtain a groove in the second electrode.

Abstract: A dye-sensitized solar cell having high long-term reliability is provided by inventing a glass composition, which is hardly eroded by an iodine electrolyte solution and has a low-melting point property, and a material using the glass composition. The glass composition for a dye-sensitized solar cell of the present invention is characterized by including as a glass composition, in terms of mass %, 20 to 70% of V2O5 and 10 to 50% of P2O5.

Abstract: The invention pertains to a process for manufacturing a solar cell foil comprising the steps of: providing an etchable temporary substrate applying a front electrode of a transparent conductive oxide (TCO) onto the temporary substrate applying a photovoltaic layer onto the TCO layer applying a back electrode layer applying a permanent carrier ensuring that the front electrode and the back electrode are electrically connected in an interconnect to establish a series connection, the front and the back electrode each being interrupted by front and back groove, respectively, at different sides of the interconnect in any one of the preceding steps providing an etch resist on the non-TCO side of the temporary substrate at least at the location of the interconnect, and at least not at the entire location of the front groove selectively removing the temporary substrate where it is not covered with etch resist.

Abstract: In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 ?m or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.

Abstract: Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Abstract: Method for making a photovoltaic device and structure thereof. The method includes providing a substrate including a glass layer, a first conductive layer on the glass layer, and a cadmium sulfide layer on the first conductive layer. Additionally, the method includes depositing one or more first materials on the cadmium sulfide layer. The one or more first materials include a first quantity of chemical element cadmium and a second quantity of chemical element tellurium. Moreover, the method includes performing a first thermal treatment to at least the first quantity of chemical element cadmium, the second quantity of chemical element tellurium, and a third quantity of chemical element chlorine, so that a polycrystalline layer composed of at least cadmium telluride is formed on the cadmium sulfide layer. Also, the method includes depositing one or more second materials on a surface of the polycrystalline layer.

Abstract: Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material.

Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: A solar includes a substrate of a first conductive type, an emitter region of a second conductive type opposite to the first conductive type and forming a p-n junction with the substrate, a first anti-reflection layer positioned on the emitter region, a first electrode connected to the emitter region, a second anti-reflection layer positioned on the first anti-reflection layer and the first electrode, and a second electrode connected to the substrate.

Abstract: A Group III-V solar cell and a manufacturing method thereof, wherein, three amorphous silicon layers are formed on a substrate, which includes a first type amorphous silicon layer, an intrinsic amorphous silicon layer, and a second type amorphous silicon layer. The lattice characteristics of amorphous silicon layer are utilized, and a Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer, such that amorphous silicon and Group III-V material are able to perform photoelectric conversion simultaneously in raising photoelectric conversion efficiency of said Group III-V solar cell effectively by means of a direct energy gap of said Group III-V material.

Abstract: The present invention relates to a solar cell having a structure of improved photo-utilization efficiency. The solar cell comprises a transparent texture layer, a transparent conductive layer, a photoelectric conversion layer and a back electrode layer and a substrate under the back electrode layer stacked in a sequence from an incident light side. A laser scribing of module process is performed in the transparent conductive layer, the photoelectric conversion layer and the back electrode layer so as to form a laser scribing region and a photoelectric conversion active region where the transparent texture layer is formed of an angular or arc surface shape and has a concave portion opposite to the laser scribing region. The laser scribing region is provided to guide the incident light to concentrate on the photoelectric conversion active region.

Abstract: A photovoltaic device including an active layer of an amorphous material in which the active layer is in the shape of an array of defined and repeating geometrical structures, wherein the geometrical structures include a base and a single apex that are connected by at least three n-polygonal surfaces where n is equal to 4 or higher.

Abstract: The present invention provides a solar cell pre-laminate assembly comprising one or more solar cells laminated between two compositionally distinct encapsulant layers, and the method of preparing a solar cell module from such an assembly.

Abstract: A solar cell structure of Group III-V semiconductor and method of manufacturing the same, comprising: a transparent substrate, an amorphous silicon layer, and at least a Group III-V polycrystalline semiconductor layer. Wherein, said amorphous silicon layer is formed on said transparent substrate through Plasma Enhanced Chemical Vapor Deposition (PECVD), and said Group III-V polycrystalline semiconductor layer is formed on said amorphous silicon layer sequentially by means of Metal-Organic Chemical Vapor Deposition (MOCVD). In said solar cell structure mentioned above, said transparent substrate replaces a conventional Group III-V substrate, hereby reducing its cost significantly, increasing surface area of said solar cell structure, hence increasing its light absorption area, and raising its photoelectric conversion efficiency.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and/or one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.

Abstract: Formulations and methods of making solar cells are disclosed. In general, the invention provides a solar cell comprising a contact made from a mixture wherein, prior to firing, the mixture comprises at least one aluminum source, at least one boron source, and about 0.1 to about 10 wt % of a glass component. Within the mixture, the overall content of aluminum is about 50 wt % to about 85 wt % of the mixture, and the overall content of boron is about 0.05 to about 20 wt % of the mixture.

Abstract: The invention relates to a hetero solar cell which comprises silicon, doped silicon layers and tunnel passivation layers. This is concluded by an indium-tin oxide layer on the front-side and by an aluminium layer on the rear-side. Furthermore, the invention relates to a method for producing hetero solar cells.

Abstract: A power generation umbrella includes solar energy components, including a solar energy absorption film, a solar energy accumulator, a transmission line, and an output interface, which are combined with an umbrella structure. The umbrella structure includes a canopy, a skeleton, a runner, and a central post. The solar energy absorption film is uniformly distributed over a top surface of the canopy. The solar energy accumulator and the output interface are arranged inside a hollow portion of the central post and are connected by the transmission line to the solar energy absorption film. The power generation umbrella features both shielding of sun light and rainwater, similar to a regular umbrella, and continuous supply of electrical power to serve a power source for an outdoor activity, so that there is no need for a user to carry a large capacity of power storage for the outdoor activity. The power generation umbrella makes the outdoor activity easy and convenient.

Abstract: A photovoltaic cell includes a first type doped mono-crystalline silicon substrate, an intrinsic amorphous silicon layer, a second type doped amorphous silicon layer, a first type doped crystalline Ge-containing layer, and a pair of electrodes. The first type doped mono-crystalline silicon substrate has a front surface and a rear surface. The intrinsic amorphous silicon layer is disposed on the front surface. The second type doped amorphous silicon layer is disposed on the intrinsic amorphous silicon layer. The first type doped crystalline Ge-containing layer is disposed on the rear surface. The pair of electrodes are electrically connected to the second type doped amorphous silicon layer and first type doped crystalline Ge-containing layer, respectively.

Abstract: The present invention provides a photovoltaic device. In an exemplary embodiment, the photovoltaic device includes a substrate having a thin film disposed thereon, where the thin film includes alloyed ternary nanocrystals. The present invention provides also provides a method of making ternary compound nanocrystals. In an exemplary embodiment, the method includes (1) degassing a solution of PbO, oleic acid and 1-octadecene (ODE) in a container, (2) heating the solution in the container, (3) injecting a first mixture of trioctylphosphine (TOP):Se solution, TMS2S, diphenylphosphine (DPP) and ODE into the heated solution, thereby forming a second mixture in the container, (4) adding ODE to the second mixture in the container, (5) growing the nanocrystals in the second mixture in a reaction in the container, and (6)_quenching the reaction, thereby resulting in precipitated nanocrystals in the container. In a further embodiment, the present invention further includes purifying the precipitated nanocrystals.

Abstract: A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 104 cm?1 for light in a wavelength range comprising about 400 cm?1 to about 700 cm?1 characterizes the thickness of material.

Abstract: A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein.

Abstract: A photovoltaic (PV) cell includes a first electrically conductive layer, a p-type semiconductor layer, and a substantially intrinsic semiconductor layer with a median grain size of at least about five (5) ?m and comprising a cadmium and tellurium. The PV cell further includes an n-type semiconductor layer and a second electrically conductive layer. The substantially intrinsic semiconductor layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A photovoltaic cell that includes a first electrically conductive layer comprising a textured substrate and a substantially intrinsic semiconductor layer, with a median grain size of at least about five (5) ?m and comprising cadmium and tellurium, is also provided.

Abstract: A solar cell includes a substrate of a first conductive type; an emitter part of a second conductive type positioned at a front surface of the substrate; a first silicon thin film layer positioned on the emitter part and including amorphous silicon containing impurities of the second type that are doped therein; a first transparent conductive layer positioned on the first silicon thin film layer and electrically connected with the emitter part; a first electrode positioned on the first transparent conductive layer and electrically connected with the first transparent conductive layer; and a second electrode positioned on a back surface of the substrate. For example, the first silicon thin film layer includes N+-a-Si:H or N+-a-SiC:H.

Abstract: In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen between an n-type single-crystal silicon substrate and a p-type amorphous silicon layer containing hydrogen, the photovoltaic device according to the present invention comprises a trap layer that contains less hydrogen than the intrinsic amorphous silicon layer between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer. The trap layer reduces hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer.

Abstract: The solar cell has a pigmented dielectric reflector, which includes two dielectric layers with different refractive indices and pigments embedded in the layers, so that the solar cell has good light-trapping properties and high efficiency with a small reflector layer thickness. The material systems suitable for producing the pigmented dielectric reflector are also part of the invention.

Abstract: A method, system and an apparatus of alternative energy powered electronic reader having preloaded educational data is disclosed. In one embodiment, a method includes converting a solar energy, through a photovoltaic cell, into an electrical current to utilize the solar energy of a sun. In addition, the method includes storing the electrical current in a battery to provide a power source to an electronic reader. The method also includes powering the electronic reader through the battery to provide an electronic content to a user. The method further includes storing the electronic content in a solid state drive in the electronic reader. The electronic content may be an educational lesson.

Abstract: The present invention generally provides a method of forming a high quality passivation layer over a p-type doped region to form a high efficiency solar cell device. Embodiments of the present invention may be especially useful for preparing a surface of a boron doped region formed in a silicon substrate. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface and then deposit a charged dielectric layer and passivation layer thereon.

Abstract: A nanocrystalline superlattice solar cell utilizing a superlattice constructed from alternating amorphous and nanocrystalline layers is provided. The amorphous layers of the superlattice include Germanium. In one embodiment the Germanium content is homogeneous across the amorphous layer. Alternatively, the Germanium content is graded across the amorphous layer from a lower content to a greater content as the amorphous layer is grown. The grading of Germanium content can vary from 0% or greater at a boundary with the preceding layer to 100% or less at a boundary with a subsequent layer. The grading may be continuous or may occur in discreet step increases in Germanium content.

Abstract: A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

Abstract: Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Abstract: A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide.

Abstract: The present invention provides novel strategies for mitigating the Staebler-Wronski Effect (SWE), that is, the light induced degradation in performance of photoconductivity in amorphous silicon. Materials according to the present invention include alloys or composites of amorphous silicon which affect the elasticity of the materials, amorphous silicon that has been grown on a flexed substrate, compression sandwiched comprising amorphous silicon, and amorphous silicon containing nanoscale features that allow stress to be relieved. The composites are formed with nanoparticles such as nanocrystals and nanotubes. Preferred are boron nitride nanotubes (BNNT) including those that have been surface modified.

Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: This disclosure provides organic photoactive devices, including organic light emitting diodes and organic solar cells. The devices have a first electrode, a second electrode, and a stack of organic layer between the first and second electrodes. The stack of organic layers has a first transport layer, a second transport layer, an interface mediating layer, and a photoactive layer.

Abstract: One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.

Abstract: Photovoltaic coatings and methods of making photovoltaic coatings are provided. The photovoltaic coating contains a semiconductor layer containing semiconductor elements such as silicon particles between bottom metal-semiconductor compounds and upper metal-semiconductor compounds. The upper metal-semiconductor compounds can exist at uppermost boundary portions between semiconductor elements and not substantially over uppermost surfaces of the semiconductor elements. The method can involve forming a semiconductor layer comprising semiconductor elements such as silicon particles over a conductive layer; forming first metal-semiconductor compounds at a bottom surface of the semiconductor layer; and forming second metal-semiconductor compounds at uppermost boundary portions between the semiconductor elements.

Abstract: A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.

Abstract: This invention relates to a photovoltaic cell and its preparation method. The nano polycrystalline bio thin film photovoltaic cell as provided by the present invention is of layered structure, and the structure from top to bottom is: a top plate insulated and sealed layer, a conductive layer, a nano semiconductor layer, chromophoric molecular layer, an electrolyte polymer layer, a conductive catalyst layer, a conductive layer, a bottom plate insulated and sealed layer. The nano semiconductor layer is made of three metal oxide or metal sulfide, and the electrolyte polymer layer is made of CeCl3, gas SiO2 and LiI. The present invention also provides the preparation method of the nano polycrystalline bio thin film photovoltaic cell. The nano polycrystalline bio thin film photovoltaic cell mentioned in the present invention has higher photovoltaic conversion efficiency, lower cost, and can be applied in construction, family, community, factories and mines and electric net power supply.