Abstract: On aspect is a method to manufacture an integrated circuit including a reshaping process of the wafer edge region and an apparatus to perform the reshaping process.

Abstract: Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well as parts requiring refurbishment after previous use in semiconductor processing. The embodiments described avoid methods and chemistries that may damage the surfaces of the quartz parts and render the parts unfit for use in semiconductor processing. A method in accordance with one embodiment minimizes damage by limiting exposure of the quartz parts to hydrofluoric acid. A quartz part for use in semiconductor processing comprises a surface including a surface portion having a surface portion area to expose to a gas, wherein at least 95 percent of the surface portion area is free of defects and wherein the surface portion has less than E12 atoms per centimeter squared of aluminum.

Abstract: An apparatus and a method for manufacturing semiconductor devices is disclosed for selectively disconnecting a fuse element out of plural fuse elements formed on a semiconductor wafer substrate which is provided with the plural fuse elements and a dielectric layer having at least one opening corresponding to the location for the plural fuse elements.

Abstract: An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

Abstract: An additive containing a hexafluorosilicic acid solution (H2SiF6+H2O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF4+H2O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F? which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.

Abstract: A substrate processing apparatus has a fluid supply means 20 for supplying fluid to a substrate W and a fluid collection means 21 for collecting the fluid in the vicinity of the substrate W, the fluid supply means 20 having a fluid spurt section 20a, the fluid collection means 21 having a fluid suction section 21a opening in the vicinity of the fluid spurt section 20a. Since the fluid collection means 21 suctions and collects the fluid floating around the substrate W as a result of the liquid having been supplied from the fluid spurt section 20a to the substrate W, it is possible to prevent the substrate W from being contaminated after the substrate W being processed with the fluid supplied from the fluid supply means 20.

Abstract: After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.

Abstract: A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated SiN etching amount of the phosphoric acid solation, determining necessity of quality adjustment of the phosphoric acid solution, based on correlation between the integrated SiN etching amount calculated and etching selectivity to oxide film, and calculating a quality adjustment amount of the phosphoric acid solution as needed, and also including a mechanism to adjust the quality of the phosphoric acid solution based on the quality adjustment amount calculated.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: A detachable detection window suitable for being disposed on a sidewall of a plasma chamber is disclosed. The detachable detection window includes a base and a cannular tube. The base herein has a first linking-up part and a second linking-up part is formed at an end of the cannular tube. The base and the cannular tube are assembled to form the detachable detection window.

Abstract: Mutually different plural kinds of processing liquid are sequentially supplied to a gap space in which a substrate is arranged to perform a wet processing to the substrate with respect to each processing liquid. Further, the processing liquid used in the wet processing is sequentially released from the communicating portion upon execution of each wet processing. The liquid retrieval tanks are selectively positioned at a retrieval position corresponding to the kind of processing liquid released from the communicating portion by relatively moving the processing unit and the liquid retrieval unit. The liquid retrieval unit is separated from the processing unit and is arranged below the processing unit. The processing liquid is released from the communicating portion of the processing unit to below the gap space downwards vertically.

Abstract: The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.

Abstract: In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface.

Abstract: An apparatus comprising a near infrared (NIR) spectrometer and a processor with an algorithm configured to acquire NIR spectral data and perform a chemometric data manipulation provides direct measurement of the etch rate for semiconductor wafer etchant solutions. The apparatus may also provide the concentrations of species in etchant and cleaning solutions, and automated process control. The apparatus may be used for analysis and control of other processing solutions.

Abstract: A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includes placing the target substrate on the substrate holding mechanism, laying out an auxiliary plate at a periphery of the substrate such that the two main faces are substantially flush with each other, supplying a second chemical solution onto the main faces, dispensing the first solution from the dispensing port and sucking the first and second solutions through the suction port, with the dispensing and suction ports brought into contact with the second solution, and while dispensing the first solution from the dispensing port and sucking the first solution through the suction port, scanning the dispensing/sucking mechanism such that the dispensing and suction ports are opposed to the main face of the substrate.

Abstract: The present invention provides an auxiliary method for wet etching by oscillation flow modification and an device for the same. The method for wet etching by oscillation flow modification includes steps of providing a metallic substrate, etching the metallic substrate with an etchant, and oscillating the etchant during etching the metallic substrate.

Abstract: Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.

Abstract: A method and apparatus are provided to decrease the diameter of the end of an optical fiber in order to make it possible to arrange optical fibers in an array with very high pitch. Also provided is an optical device comprising a plurality of optical fibers, each fiber formed of a body having a first diameter and an external coating, wherein end portions of the fibers have no external coating thereon and have a second diameter which is smaller than the first diameter.

Abstract: A phosphoric acid solution stored in an immersion bath is circulated through a circulation line. Substrates on each of which a silicon oxide film and a silicon nitride film are formed are immersed into the phosphoric acid solution in the immersion bath, to proceed a process of selectively etching the silicon nitride film. A recovery line draws part of the phosphoric acid solution circulating through the circulation line, and collects and discharges siloxane with a recovery device to recover the phosphoric acid solution. A control part controls a flow rate regulating valve on the basis of measurement results of an outlet concentration meter and an inlet concentration meter, to regulate the flow rate of the phosphoric acid solution to be circulated to the immersion bath so that the concentration of siloxane contained in the phosphoric acid solution stored in the immersion bath should be constant.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: A substrate processing apparatus includes a high-speed supply system having a relatively small opening for ejecting a processing liquid through the relatively small opening to supply the processing liquid into a processing bath, and a low-speed supply system having a relatively large opening for ejecting the processing liquid through the relatively large opening to supply the processing liquid into the processing bath. While an etching process is in progress, the processing liquid is supplied through the high-speed supply system. This decreases a difference in concentration of a liquid chemical component in the processing liquid within the processing bath to improve the uniformity of the etching process. While the etching process is not in progress, on the other hand, the processing liquid is supplied through the low-speed supply system. This improves the efficiency of the replacement of the processing liquid within the processing bath.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

Abstract: A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

Abstract: The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.

Abstract: A system for regulating an etch process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the acceptability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor selectively controls the etching devices to regulate etching of the portions of the wafer.

Abstract: Disclosed is an etching apparatus enabling to increase productivity of etching glass substrates. The present invention includes an etching bath having an etchant, a plurality of sensors inside the etching bath detecting a level of the etchant, and a deionized water tube spraying a deionized water to the sensors.

Abstract: The method and apparatus are provided for preparing a slurry for a CMP apparatus with which mixing accuracy for a slurry is improved and accurate measurement is automatically accomplished for H2O2 as a small amount of additive. A slurry preparation apparatus for a CMP apparatus comprises a tank for preparing the slurry, a stock solution feeder for the slurry which feeds a stock solution for the slurry into the tank, and a concentration measurement instrument located outside the tank, which is capable of measuring an additive concentration in the slurry in the tank. The concentration measurement instrument measures the additive concentration in the slurry in the tank, and the amount of the stock solution for the slurry to be supplied is controlled according to the measurements.

Abstract: A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Abstract: A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

Abstract: A substrate processing apparatus for supplying a treatment liquid onto the surface of a substrate to treat the same. This apparatus is provided with: a spin chuck for holding and rotating a substrate; a nozzle for supplying a treatment liquid to the substrate held by the spin chuck; a circulating passage arranged such that the treatment liquid supplied to the substrate from the nozzle and used for substrate treatment is circulated to the nozzle and reutilized for substrate treatment; a metal contamination amount measuring device for measuring the metal contamination amount in the treatment liquid passing through the circulating passage; and a judgment processing unit for judging whether or not the value measured by the metal contamination amount measuring device has exceeded a predetermined set value.

Abstract: A method and apparatus for improving an operating efficiency for a process including temperature dependent fluid delivery including determining a projected time period to start a process during a non-operating time period; delivering a process fluid for performing the process along at least one fluid recirculation pathway for at least one selected time period the at least one fluid recirculation pathway including a substantial portion of a fluid delivery pathway for providing the process fluid to the process at a predetermined process temperature; and, providing the process fluid following the at least one selected time period to the process at the predetermined process temperature.

Abstract: A vacuum processing device includes at least one vacuum processing chamber for performing predetermined treatments to a wafer being transferred to a predetermined position within the chamber, an atmospheric transfer equipment for transferring a wafer in atmospheric air to a vacuum transfer equipment which is disposed within a vacuum transfer chamber connecting the atmospheric air and the vacuum processing chambers for transferring the wafer received from the atmospheric transfer equipment to the predetermined position within the vacuum processing chamber, and wafer position sensors disposed near the ingress path leading into the processing chamber for detecting the displacement of the wafer being transferred.

Abstract: A chemical mechanical polishing system uses a shear force measurement system. Polishing parameters, such as the polishing pressure, can be adjusted in response to the measured shear force. For example, the pressure can be increased to avoid hydroplaning or decreased to avoid delamination or damage to a low-k dielectric film being polished. The shear force measurement system can include a sensor disk and one or more load cells.

Abstract: A dual-port endpoint detection window for a process chamber for substrates. The dual-port endpoint detection window of the present invention comprises a primary port and a secondary port each of which may be individually removably fitted with a light sensor for the endpoint detection system. A cover is provided for removably covering the secondary port. After the window of the primary port has become covered with material deposition as a result of prolonged use of the process chamber, the secondary port is uncovered for use and the light sensor is attached to the secondary port for continued use of the endpoint detection system through the secondary port.

Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract: According to the present invention, a chemical and mechanical polishing apparatus (100) for a sample such as a wafer includes a built-in inspection apparatus (25) incorporated therein. The polishing apparatus (100) further comprises a load unit (21), a chemical and mechanical polishing unit (22), a cleaning unit (23), a drying unit (24) and an unload unit (26). The chemical and mechanical polishing apparatus (100) receives a sample from a preceding step (107), carries out respective processes for the sample by said respective units disposed within the polishing apparatus (100) and then transfers the processed sample to a subsequent step (109). Sample loading and unloading means and a sample transfer means are no more necessary for transferring the sample between respective units.

Abstract: A processing line includes a process tool, a metrology tool, a tool state monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The tool state monitor is configured to observe at least one tool state variable value during the processing of a selected workpiece in the processing tool. The sampling controller is configured to receive the observed tool state variable value and determine the sampling plan for the metrology tool based on the observed tool state variable value. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. At least one tool state variable value is observed during the processing of a particular workpiece in the processing tool.

Abstract: The inventive device for cleaning substrates, especially semiconductor wafers, comprises a treatment basin for receiving at least one substrate, a cover for sealing said treatment basin, a first feeding device for controllably feeding in a reactive gas, a second feeding device for controllably feeding in at least one moist fluid for promoting a reaction between the reactive gas and a deposit to be removed from the substrate and a control device for controlling the concentration of moisture in the treatment basin.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

Abstract: An inspection unit is provided in a substrate processing apparatus performing resist coating processing and development processing on a substrate. In the inspection unit, a film thickness measuring device, a line width measuring device, an overlay measuring device and a macro defect inspection device are successively stacked and arranged from below. The inspection unit is provided on an intermediate portion of a substrate transport path formed in the substrate processing apparatus. The substrate processed in the substrate processing apparatus is selectively introduced into each inspection part. Therefore, the apparatus can properly inspect the substrate at need while suppressing reduction of the throughput. Thus provided are a substrate processing apparatus and a substrate inspection method capable of properly inspecting a substrate while suppressing reduction of the throughput.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: A photoresist supply apparatus is provided. The photoresist supply apparatus includes a lower photoresist sensor and an upper photoresist sensor respectively installed near the bottom and the top of a trap tank to detect a photoresist in the trap tank. A drain line is connected to an upper side of the trap tank to release air. A photoresist-blocking valve is installed at the drain line, the photoresist-blocking valve structured to be opened to release air or closed to prevent photoresist loss according to signals detected by the lower photoresist sensor and the upper photoresist sensor. While the photoresist is supplied into the trap tank, the photoresist-blocking valve is opened to release air. After the photoresist supply into the trap tank is completed, the photoresist-blocking valve is closed to prevent the loss of a large amount of the photoresist through the drain line.

Abstract: A method and apparatus for performing online monitoring of a physical characteristic of a process material. A request to provide a slurry to a processing tool is received. The slurry is transported through a slurry transport unit, based upon the request, to the processing tool. An online monitoring of a physical characteristic of the slurry is performed. The online monitoring of the slurry includes analyzing an optical signal sent through the slurry to determine whether the physical characteristic of the slurry is within a predetermined level of tolerance.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: Disclosed is an apparatus and method for controlling boiling condition of hot H3PO4 solution by adjusting the vapor extracting rate thereof, wherein an acid tank filled with hot H3PO4 solution to a level surface is located in a treatment room and a temperature thermocouple is arranged above the level surface of the hot H3PO4 solution to monitor the vapor temperature near the level surface of the H3PO4 solution. The vapor temperature is used to adjust the extracting rate of the treatment room by control of a damper connected to an outlet of the treatment room. According to the present invention, the treatment apparatus and method can control the boiling condition of the hot H3PO4 solution thereof by properly adjusting the extracting rate, and therefore avoid defects and loss of control in manufacturing processes.

Abstract: An apparatus for assessing a silicon dioxide content of a phosphoric acid bath for etching silicon nitride and a system for etching silicon nitride bath utilize a sensor. In particular, the apparatus for assessing the silicon dioxide content of a phosphoric acid bath for etching silicon nitride of the present invention contains a sensor for measuring the NH3 concentration of the phosphoric acid bath, a storage unit for storing data which define a relationship between the silicon dioxide content and the NH3 concentration, and a device for calculating the silicon dioxide content of the basis of the measured NH3 concentration and the stored data.