Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

Abstract: This joining method of joining a target substrate and a support substrate includes: an adhesive coating operation that includes coating the target substrate or the support substrate with an adhesive; an adhesive removing operation that includes supplying a solvent of the adhesive onto an outer peripheral portion of the target substrate or the support substrate, which is coated with the adhesive in the adhesive coating operation, to thereby remove the adhesive on the outer peripheral portion; and a joining operation that includes pressing and joining the target substrate and the support substrate together, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the support substrate coated with no adhesive, or pressing and joining the support substrate, in which the adhesive on the outer peripheral portion is removed in the adhesive removing operation, and the target substrate coated with no adhesive.

Abstract: A system and method of etching a semiconductor device are provided. Etching solution is sampled and analyzed by a monitoring unit to determine a concentration of components within the etching solution, such as an oxidant concentration. Then, based upon such measurement, a makeup amount of the components may be added be a makeup unit to the etching solution to control the concentration of the components within the etching system.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Apparatuses include a wet etch module (WEM) operable to combinatorially etch a substrate having at least two site-isolated regions. The WEM includes a dispense manifold operable to dispense fluids and a mixing vessel unit operable to mix fluids. The WEM further includes a reactor unit operable to receive fluids from the dispense manifold or the mixing vessel unit. The reactor unit can apply a combinatorial process on a substrate having at least two site-isolated regions within the WEM. In addition, a secondary containment unit, having a leak sensor therein, is coupled to the dispense manifold, mixing vessel unit, or reactor unit to receive fluid leaks within the system. When the leak sensor detects a fluid leak, a warning may be generated. Advantageously, the generated warning does not impede substrate processing within the WEM.

Abstract: Stripping structure strips insulation from ends of a plurality of leads of a lead bundle. Each lead includes a conductor member coated with the insulation. The structure includes a housing having wall structure defining a stripping chamber, an inlet in fluid communication with the stripping chamber, and an outlet in fluid communication with the stripping chamber. A cover has an opening for receiving an end of the lead bundle in a sealing manner so that the leads thereof are received in the stripping chamber. Chemical stripping solution is in communication with the inlet. When the lead bundle is received through the opening with the leads in the stripping chamber and when the chemical stripping solution is provided though inlet and in the stripping chamber, the chemical stripping solution strips the insulation from the conductor members, with the stripping solution along with stripped insulation exiting through the outlet.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: In an apparatus and process for treating wafer-shaped articles, a spin chuck holds a wafer-shaped article in a predetermined orientation relative to an upper surface of the spin chuck. A heating assembly comprises a housing containing at least one infrared heating element. The heating assembly is mounted above the upper surface of the spin chuck and adjacent a wafer-shaped article when mounted on the spin chuck. The housing also contains a conduit having an inlet connected to a source of cooling fluid and an outlet returning cooling fluid to the source of cooling fluid.

Abstract: An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.

Abstract: An apparatus and method for processing wafer-shaped articles features a spin chuck that is axially displaceable between at least two exhaust levels within a surrounding collector. A gas supply system comprises ducts for supplying gas separately to a first interior region of the collector that is above the spin chuck and a second interior region that is below the spin chuck. The pressure differential within the collector above and below the spin chuck can thereby be controlled to prevent cross-contamination between collector levels.

Abstract: According to one embodiment, a flow rate adjusting unit is disposed on a gas passageway and includes a valve that adjusts the flow rate of a gas and an actuator that controls the displacement amount of the valve. A displacement amount storage unit stores displacement amount information in which a displacement amount of the valve, used when a gas flows into the gas passageway at a flow rate defined according to a process procedure before performing the process procedure, is obtained in advance for each process procedure. A setting circuit acquires the displacement amount corresponding to the process procedure from the displacement amount storage unit, and controls the actuator on the basis of the acquired displacement amount.

Abstract: A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, and a chamber. The substrate rotating mechanism incudes an annular rotor part disposed in an internal space of the chamber and a stator part disposed around the rotor part outside the chamber. The substrate holding part is attached to the rotor part in the internal space of the chamber. In the substrate rotating mechanism, a rotating force is generated about a central axis between the stator part and the rotor part. The rotor part is thereby rotated about the central axis, being in a floating state, together with a substrate and the substrate holding part. In the substrate processing apparatus, the substrate can be easily rotated in the internal space having excellent sealability. As a result, it is possible to easily perform single-substrate processing in a sealed internal space.

Abstract: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate to form a hard mask film on the front surface of the substrate, a hard mask film removing solution dissolving the hard mask film is supplied to the hard mask film formed at the edge portion of the substrate to remove the hard mask film formed at the edge portion of the substrate, and a masking film removing solution dissolving the masking film is supplied to the masking film to remove the masking film at the edge portion of the substrate.

Abstract: A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: A supplying device including a supplying part and an adjustment part is provided. The supplying part includes a run-through supplying path for transporting a fluid. The adjustment part includes a channel and one or more recovery paths adjacent to the channel. The supplying part is disposed in the channel to allow the fluid to flow out of the channel through the supplying part and to allow the recovery paths to suck a portion of the etching solution outputted from the channel in order to control the amount of output of the fluid. Wet-etching equipment including the supplying device is also provided.

Abstract: The methods and apparatus disclosed herein concern a process that may be referred to as a “soft anneal.” A soft anneal provides various benefits. Fundamentally, it reduces the internal stress in one or more silicon layers of a work piece. Typically, though not necessarily, the internal stress is a compressive stress. A particularly beneficial application of a soft anneal is in reduction of internal stress in a stack containing two or more layers of silicon. Often, the internal stress of a layer or group of layers in a stack is manifest as wafer bow. The soft anneal process can be used to reduce compressive bow in stacks containing silicon. The soft anneal process may be performed without causing the silicon in the stack to become activated.

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract: A substrate treating apparatus includes a circulating line having a treating tank for storing a phosphoric acid aqueous solution, a circulating pump for feeding the phosphoric acid aqueous solution, a heater for circulation for heating the phosphoric acid aqueous solution, a filter for filtering the phosphoric acid aqueous solution, the circulating line causing the phosphoric acid aqueous solution discharged from the treating tank to flow in order of the circulating pump, the heater for circulation and the filter, and returning the phosphoric acid aqueous solution from the filter to the treating tank. The apparatus also includes a branch pipe branching from the circulating line between the heater for circulation and the filter for extracting the phosphoric acid aqueous solution from the circulating line, and a concentration measuring station connected to the branch pipe for measuring silicon concentration in the phosphoric acid aqueous solution by potentiometry.

Abstract: An apparatus and method for liquid treatment of wafer-shaped articles comprises a process unit comprising a chuck for holding a wafer-shaped article in a predetermined orientation, and a liquid recovery system that receives used process liquid recovered from the process unit. The liquid recovery system supplies process liquid to a dispenser in the process unit. A supply of fresh process liquid supplies fresh process liquid to the liquid recovery system and also supplies fresh process liquid to a dispenser in the process unit while bypassing the liquid recovery system.

Abstract: A substrate processing device, which processes by immersing the substrate in the processing liquid comprising a mixture of a chemical and a diluting liquid, is provided with: a processing tank (1) that retains the processing liquid; heating means (2, 3) that heat the processing liquid; a temperature detection means (4) that detects the temperature of the processing liquid; a temperature control means (5) that operates the aforementioned heating means (2, 3) in a manner so that the detected temperature approaches a set temperature; a replenishing means (6) that replenishes the diluting liquid in the processing liquid; a concentration detection means (7) that detects the concentration of the processing liquid by measuring the light absorption characteristics of the processing liquid; and a concentration control means (8) that operates the aforementioned replenishing means (6) in a manner so that the detected concentration approaches a set concentration.

Abstract: A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

Abstract: A substrate holding unit of a liquid processing apparatus holds a circular substrate horizontally and rotates the substrate about a vertical axis, and a chemical liquid nozzle supplies a chemical liquid to the peripheral edge of the substrate while the substrate is being rotated in order to remove a film of the peripheral edge. An image capture unit captures an image of the peripheral edge, and a determination unit calculates an actually removed value for a removed width of the film based on a result of the image capturing and determines whether the removed width is suitable or not.

Abstract: The present disclosure provides three-dimensional structures and related methods. The three-dimensional structures may define patterns of positive and negative spaces on opposing surfaces that combine to form the three-dimensional structures. The negative spaces of the patterns may intersect to form apertures through the three-dimensional structures, which may define linear or non-linear paths therethrough. The apertures may be configured to provide desirable characteristics with respect to light, sound, and fluid travel therethrough. Further, the three-dimensional structures may be configured to define desired stiffness, weight, and/or flexibility. The three-dimensional structures may be employed in embodiments including heat sinks, housings, speaker or vent covers, springs, etc.

Abstract: Methods and apparatus for etching materials using tetramethylammonium hydroxide (TMAH) are described. The methods may involve including an additive when applying the TMAH to the material to be etched. The additive may be a gas, and in in some situations may be clean dry air. The clean dry air may be provided with the TMAH to minimize or prevent the formation of hillocks in the etched structure. Apparatus for performing the methods are also described.

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract: An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.

Abstract: Chemical-mechanical polishing (CMP) systems comprising apparatus and methods which allow the physical and chemical characteristics of a CMP slurry to be monitored during the polishing process, both on the pad and in the fresh slurry, are provided. The methods and apparatus of the invention also furnish the CMP operator with real-time information about the polishing process, which can provide insight into various chemical and physical mechanisms involved in chemical-mechanical polishing. The data provided by the sensors also make available valuable information about the stability and reproducibility of the particular CMP process being observed.

Abstract: A production apparatus is provided for producing a near field optical head that includes, during its production process, a substrate, at least one protuberance extending from a surface of the substrate, an electrically conductive shielding film covering the protuberance and the substrate, and a parent film, as a mother material for an air bearing, covering the shielding film. The production apparatus has an etchant for etching the parent film and a container for storing the etchant and for containing the substrate, the shielding film, and the parent film so that the substrate, the shielding film, and the parent film are immersed in the etchant. At least one electrode is fixedly mounted in the container so as to be immersed in the etchant. A measuring device measures an electrical characteristic between the electrode and the shielding film.

Abstract: In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

Abstract: A method for selectively etching a substrate includes providing a template having opening portions formed on an upper surface in a predetermined pattern and flow channels penetrating through the template from the opening portions to a lower surface of the template, filling an etching solution into the flow channels, coupling the upper surface of the template to a substrate such that the opening portions correspond to the predetermined pattern of through holes to be formed through the substrate, and supplying the etching solution onto the substrate through the opening portions of the template such that the through holes are etched through the substrate.

Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

Abstract: Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method. The liquid processing apparatus includes an ejection port ejecting a first liquid to a wafer, a first liquid supply mechanism supplying sulphuric acid to the ejection port, and a second liquid supply mechanism supplying hydrogen peroxide solution to the ejection port. The first liquid supply mechanism includes a first temperature adjustment mechanism maintaining the first liquid heated to a first temperature, a second temperature adjustment mechanism connected to the first temperature adjustment mechanism, and an ejection line connecting the second temperature adjustment mechanism with the ejection port. The second temperature adjustment mechanism includes a second circulation line and a second heater. The ejection line connects the second circulation line through a switching valve at a location further downstream than the second heater.

Abstract: A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent includes a concentration sensing means for sensing the concentration of the processing liquid by measuring the absorbance characteristics of the processing liquid. The concentration sensing means includes a light-transmitting section that introduces the processing liquid into the inside to let the processing liquid pass therethrough, a light-emitting section that radiates light having a predetermined wavelength to the light-transmitting section, a light-receiving section that receives the light therefrom via the light-transmitting section, a first lens that condenses the light emitted from the light-emitting section to the light-transmitting section, a second lens that condenses the light that has passed through the light-transmitting section to the light-receiving section, and a cooling mechanism that cools at least one of these.

Abstract: A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.

Abstract: A method of chemically milling a workpiece includes the step of depositing a masking material on portions of a workpiece according to a predefined masking pattern such that other portions of the workpiece that are desired to be milled are unmasked. The masking material is deposited using a masking printer that moves in three dimensions to deposit the masking material onto the workpiece. The method also includes the step of chemically removing material from unmasked desired milling areas of the workpiece.

Abstract: A high purity, non-toxic, environmentally friendly method for anisotropically etching single crystal silicon and etching polysilicon, suitable for microelectronics, optoelectronics and microelectromechanical (MEMS) device fabrication, using high purity aqueous ammonium hydroxide (NH4OH) solution generated at the point of use, is presented. The apparatus of the present invention supports generation of high purity aqueous NH4OH solution from ammonia NH3 gas dissolved into distilled/deionized water and maintained in equilibrium with an overpressure of NH3, within a hermetically enclosed chamber at the optimal temperature between 70-90° C., preventing evaporation of NH3 gas from aqueous NH4OH solution for achieving a high anisotropic etching rate. Other liquid anisotropic etching methods for silicon may use tetramethylammonium hydroxide (TMAH).

Abstract: Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistries are disclosed. A method in accordance with one embodiment includes sequentially exposing a portion of a semiconductor workpiece surface to a first chemistry having a first chemical composition and a second chemistry having a second chemical composition different than the first. Prior to rinsing the portion of the workpiece surface, the portion is sequentially exposed to the first and second chemistries again. The first and second chemistries are removed from the portion, and, after sequentially exposing the portion to each of the first and second chemistries at least twice, and removing the first and second chemistries, the portion is rinsed and dried.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.

Abstract: A liquid supply apparatus is to supply a polishing liquid from a polishing supply source onto a polishing surface of a polishing table at a predetermined flow rate. The liquid supply apparatus according to the present invention includes at least one supply tube for retaining the liquid supplied from the liquid supply source, an electropneumatic regulator for supplying a pressurized gas from a gas source to the supply tube, and a pipe having no narrow portion for controlling a flow rate of the liquid. The supply tube is vertically disposed. The pressurized gas supply mechanism is operable to supply the pressurized gas to the supply tube so as to supply the liquid, filling the supply tube, to the polishing surface of the polishing table via the pipe and a polishing liquid supply pipe.

Abstract: Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.

Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.

Abstract: Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing system that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the second container being adapted to receive and retain an overflow amount of a fluid from the first container, and disposing the fluid in the first container and a portion of the second container. The method includes providing at least one semiconductor device, disposing the at least one semiconductor device in the first container, and maintaining the fluid in the second container substantially to a first level while processing the at least one semiconductor device with the fluid.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

Abstract: There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates with a treating liquid. The apparatus includes a treating tank for storing the treating liquid; a lifter having holding elements for holding the substrates, and vertically movable between a standby position above the treating tank and a treating position inside the treating tank; lower nozzles arranged on opposite sides at a bottom of the treating tank for supplying the treating liquid; upper nozzles arranged above the lower nozzles for supplying the treating liquid toward the holding elements of the lifter; and a control device for controlling a flow ratio of the treating liquid between the upper nozzles and the lower nozzles according to the treatment.