Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).

Abstract: A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.

Abstract: There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Abstract: The present disclosure provides an organic light emitting display that may comprise: an organic light emitting device (OLED) including a first electrode, an organic layer including a light-emitting layer, and a second electrode, which are sequentially formed on a substrate having a Thin Film Transistor (TFT) formed on the substrate; and an upper encapsulation layer, which is formed of an aluminum oxide-based material, is formed in a single layer, and is disposed on the substrate on which the organic light emitting device (OLED) is formed, wherein a Water Vapor Transmission Rate (WVTR) of the upper encapsulation layer is smaller than or equal to 10?2 g/m2/day.

Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

Abstract: To provide an EUV mask blank provided with a low reflective layer, which has excellent properties as an EUV mask blank. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a low reflective layer to an inspection light (wavelength: 190 to 260 nm) for a mask pattern, formed in this order on the substrate, wherein the low reflective layer has a stacked structure having a first layer containing at least 95 at % in total of silicon (Si) and nitrogen (N), and a second layer containing at least 95 at % in total of tantalum (Ta), oxygen (O) and nitrogen (N) or a second layer containing at least 95 at % in total of tantalum (Ta) and nitrogen (N), stacked in this order from the absorber layer side.

Abstract: A color filter substrate including a base substrate, a color layer on the base substrate, a conductive layer on the color layer, and a grain compensation layer between the color layer and the conductive layer. The grain compensation layer includes zinc oxide and a metal oxide other than zinc oxide. A content of the metal oxide is lower than that of the zinc oxide in the grain compensation layer. The grain compensation layer increases the grain size of the conductive layer.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.

Abstract: A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cm2 and 11 W/cm2 applied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.

Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.

Abstract: A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Certain example embodiments relate to a layer of or including Ti1-xSixOy and/or a method of making the same. In certain example embodiments, the Ti1-xSixOy-based layer may be substoichiometric with respect to oxygen. In certain example embodiments of this invention, the layer may include Ti1-xSixOy where x is from about 0.05 to 0.95 (more preferably from about 0.1 to 0.9, and even more preferably from about 0.2 to 0.8, and possibly from about 0.5 to 0.8) and y is from about 0.2 to 2 (more preferably from about 1 to 2, and even more preferably from about 1.5 to 2, and possibly from about 1.9 to 2). The layer may have an index of refraction of from about 1.6 to 1.9. The layer may also be used with a transparent conductive oxide in a transparent conductive coating.

Abstract: A coated article is provided with at least one infrared (IR) reflecting layer. In certain embodiments, the coating is provided with at least one layer of zirconium silicon oxynitride (e.g., ZrSiOxNy), for improving the coated article's ability to block of UV radiation. The oxygen content of the layer may be adjusted in order to tune the coating's visible transmission versus UV blockage.

Abstract: A method (100) for manufacturing a thermal absorber for a solar thermal collector includes arranging (120) a substrate of the thermal absorber on a vacuum coating line and depositing (160) by way of a physical vapour deposition on the substrate that is arranged on the vacuum coating line layers configured to absorb light.

Abstract: To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.

Abstract: To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank.

Abstract: A coated article, and a corresponding method of making the same are provided. The coated article includes a coating supported by a substrate, the coating including a thin metal or metal nitride contact layer (e.g., NiCr, Ni, Cr, CrNx or NiCrNx) located directly between and contacting an infrared (IR) reflecting layer (e.g., Ag) and an oxide barrier layer (e.g., NiCrOx).

Abstract: A coated article is provided that may be heat treated in certain example embodiments. A graded layer (e.g., contact layer or other suitable layer) is formed by initially sputter-depositing a layer, and thereafter ion beam treating the sputter-deposited layer with at least reactive gas ions in order to form a graded layer. In certain example embodiments, the result is a coated article that has improved visible transmission and/or durability, without sacrificing optional heat treatability.

Abstract: The invention provides a substrate bearing a low-maintenance coating. In some embodiments, the coating includes a low-maintenance film that includes both titanium oxide and tungsten oxide. The invention also provides methods and equipment for depositing such coatings.

Abstract: A coated article that can be used in applications such as insulating glass (IG) units, so that resulting IG units can achieve high visible transmission of at least 70% (e.g., when using clear glass substrates from 1.0 to 3.5 mm thick), combined with at least one of: (a) SHGC no greater than about 0.45, more preferably no greater than about 0.40; (b) SC no greater than about 0.49, more preferably no greater than about 0.46; (c) chemical and/or mechanical durability; (d) neutral transmissive color such that transmissive a* is from ?5.0 to 0 (more preferably from ?3.5 to ?1.5), and transmissive b* is from ?2.0 to 4.0 (more preferably from 1.0 to 3.0); and (e) neutral reflective color from the exterior of the IG unit (i.e., Rg/Rout) such that reflective a* is from ?3.0 to 2.0 (more preferably from ?2.0 to 0.5), and reflective b* is from ?5.0 to 1.0 (more preferably from ?4.0 to ?1.0).

Abstract: The invention relates to a method for producing an ultrabarrier layer system through vacuum coating a substrate with a layer stack that is embodied as an alternating layer system of smoothing layers and transparent ceramic layers, but comprising at least one smoothing layer between two transparent ceramic layers, which are applied by sputtering, in which during the deposition of the smoothing layer a monomer is admitted into an evacuated coating chamber in which a magnetron plasma is operated.

Abstract: The invention relates to solar-control glazing comprising a glass substrate and a solar-control thin-film multilayer, said thin-film multilayer incorporating a film selectively absorbing infrared radiation having a wavelength longer than 800 nm, said absorbing film consisting of a titanium oxide substituted with an element X chosen from Nb or Ta, the atomic percentage [X/Ti+X] lying between about 4% and about 9% and the thickness of said absorbing film lying between about 20 and about 200 nanometers.

Abstract: Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm2 to about 2500 cm2.

Abstract: The infrared reflective layered product can reflect infrared radiation with certain wavelengths to prevent heat accumulation while exhibiting excellent heat resistance. The product includes a base layer (B), a layer (A) layered on one side of the layer (B), and a layer (C) layered on the other side of the layer (B). Layer (A) is a colored resin layer which has an absorptance of a light with a wavelength of 800-1400 nm of not more than 10%. Layer (B) is a thermoplastic resin layer which shows a dimensional change (s) satisfying 1%?s??1% when left at 150° C. for 30 min. Layer C is a colored resin layer having a reflectance of a light with a wavelength of 400-1400 nm of not less than 50%. The product may also include a water vapor barrier layer (D).

Abstract: A composite material including a carrier g of aluminum, an optically effective multi-layer system applied to a side (A) of the carrier. The system having at least 2 dielectric and/or oxidic layers, namely an upper layer and a lower, light-absorbing layer. The lower, light-absorbing layer contains a titanium-aluminum mixed oxide TiAlqOx and/or a titanium-aluminum makes nitride TiAlqNy and/or a titanium-aluminum mixed oxynitride TiAlqOxNy, while the upper layer is an oxidic layer made of titanium, silicon or tin of the chemical composition TiOz, SiOw, or SnOv, where the indices q, v, w, y and z each denote a stoichiometric or nonstoichiometric ratio.

Abstract: A coated article for use in spandrel applications and/or the like is provided. In certain example embodiments, a coating is provided to have a coating design which permits the coating to realize more predictable and/or consistent optical characteristics such as glass side reflectance, color and/or the like. Certain example embodiments of this invention relate to a method of making a coated article for spandrel applications or the like. In certain embodiments, a powder inclusive lacquer coating is used as an overcoat.

Abstract: A method of making a cathode structure for an OLED provided over organic layers includes evaporating a first layer over the organic layers, such layer including a metal or metal alloy whose work function is less that 4.0 eV, or a material including an electron-injecting dopant and a reactive metal; depositing at least one second layer of an inorganic material over the first layer to form a buffer structure with the first layer; and sputtering a protective layer of a metal or metal alloy provided over the buffer structure.

Abstract: A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.

Abstract: A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.

Abstract: A reflective coating is disclosed that has a base layer provided with a reflective surface for reflecting electromagnetic radiation, such as visible and solar near-infrared light. The reflective coating also has a dielectric layer formed on the reflective surface, and an absorber layer. The absorber layer is formed on the dielectric layer that is formed on the base layer. The reflective coating has an average reflectance greater than about 60% for wavelengths of electromagnetic radiation in the range of 800 to 2500 nm that is irradiated upon the reflective coating. Additionally, the reflective coating has an average reflectance for wavelengths of electromagnetic radiation in the range of 400 to 700 nm irradiated upon the reflecting coating that is less than the average reflectance of the reflective coating from 800 to 2500 nm.

Abstract: A coated article that can be used in applications such as insulating glass (IG) units, so that resulting IG units can achieve high visible transmission of at least 70% (e.g., when using clear glass substrates from 1.0 to 3.5 mm thick), combined with at least one of: (a) SHGC no greater than about 0.45, more preferably no greater than about 0.40; (b) SC no greater than about 0.49, more preferably no greater than about 0.46; (c) chemical and/or mechanical durability; (d) neutral transmissive color such that transmissive a* is from ?5.0 to 0 (more preferably from ?3.5 to ?1.5), and transmissive b* is from ?2.0 to 4.0 (more preferably from 1.0 to 3.0); and (e) neutral reflective color from the exterior of the IG unit (i.e., Rg/Rout) such that reflective a* is from ?3.0 to 2.0 (more preferably from ?2.0 to 0.5), and reflective b* is from ?5.0 to 1.0 (more preferably from ?4.0 to ?1.0).

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: A method and apparatus for depositing a CIGS film and a buffer layer on to a flexible substrate. Deposition of the CIGS film occurs in monolayers due to rotation of the flexible substrate. A roll of substrate is placed on a loading roller within a flexible solar cell coating apparatus. A section of the substrate unwinds and advances around a rotating drum. The CIGS film is deposited as the section is rotated and heated. Deposition is a hybrid sputtering and evaporation process. Deposition continues until a predetermined thickness is met and the roll is completely coated. The buffer layer is then deposited on to the CIGS film. The deposition of the CIGS film utilizes elemental selenium and sodium doped indium. The elemental selenium may be ionized to increase monolayer reaction reactivity. The buffer layer is a non-toxic ZnS-O layer.

Abstract: A scratch resistant coated article is provided which is also resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluoride-based etchant(s). In certain example embodiments, the anti-etch layer(s) is substantially transparent to visible light. In certain embodiments, a DLC layer(s) may be provided over the anti-etch layer. An underlayer may be provided under the anti-etch layer(s) in certain example embodiments. In certain example embodiments, the anti-etch layer(s) may be of or include a carbide and/or oxycarbide of Zr, Sn or the like.

Abstract: Improved solar collectors (40) comprising glass tubing (42) attached to bellows (44) by airtight seals (56) enclose solar absorber tubes (50) inside an annular evacuated space (54. The exterior surfaces of the solar absorber tubes (50) are coated with improved solar selective coatings (48) which provide higher absorbance, lower emittance and resistance to atmospheric oxidation at elevated temperatures. The coatings are multilayered structures comprising solar absorbent layers (26) applied to the meta surface of the absorber tubes (50), typically stainless steel, topped with antireflective Savers (28) comprising at least two layers 30, 32) of refractory metal or metalloid oxides (such as titania and silica) with substantially differing indices of refraction in adjacent layers. Optionally, at least one layer of a noble metal such as platinum can be included between some of the layers.

Abstract: A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used to treat an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been found to improve sheet resistance (Rs) properties, emittance, solar control properties, and/or durability of the coated article.

Abstract: A light absorbing layer of a CIGS solar cell and a method for fabricating the same are provided. According to the present invention, a cuprous sulfide layer is prepared by a sputtering process. Then, a CIGS sol-gel solution is provided onto the cuprous sulfide layer by an immersion coating, spin coating, printing, or spray coating process. The CIGS sol-gel solution is then baked to form a plurality of a CIGS stack layers containing copper (Cu), indium (In), gallium (Ga), and selenium (Se). A rapid thermal process is then conducted for melting the cuprous sulfide layer and the CIGS stack layers to form a copper/indium/gallium/sulfur/selenium (CIGSS) light absorbing layer. The CIGSS light absorbing layer is provided for a solar cell to improve the photoelectric transformation efficiency and the light absorbance.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

Abstract: Nano-composite materials are disclosed. An exemplary method of producing a nano-composite material may comprise co-sputtering a transition metal and a refractory metal in a reactive atmosphere. The method may also comprise co-depositing a transition metal and a refractory metal composite structure on a substrate. The method may further comprise thermally annealing the deposited transition metal and refractory metal composite structure in a reactive atmosphere.

Abstract: A method of reactive magnetron sputtering for large-area deposition of a chalcopyrite absorber layer for thin-film solar cells on a substrate, using at least one magnetron sputter source with at least one copper target, and using an inert gas and a chalcogen-containing reactive gas in a magnetron plasma, includes introducing the chalcogen-containing reactive gas directly at the substrate. The chalcogen-containing reactive gas fraction is set at 5 to 30% of the inert gas fraction in the magnetron plasma. A sputtering pressure of between 1 and 2 Pa, is set. A negative bias voltage is applied to the substrate. The magnetron plasma is excited by rapid frequency AC voltage above 6 MHz. The substrate is heated to a temperature between 350° C. and 500° C.

Abstract: The present invention relates to a light selective absorbing coating and a production process thereof. The light selective absorbing coating consists of a composite material film deposited by reaction of iron chromium alloy and a non-metal gas with vacuum deposition technology. Said non-metal gas comprises gases of nitrogen and oxygen elements. The present invention also relates to a solar energy heat collecting element or solar energy selective absorbing coating system comprising said light selective absorbing coating and a production process thereof. The present invention further relates to use of said composite material film as a light selective absorbing coating of a solar energy heat collecting element or of a solar energy selective absorbing coating system.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: A photovoltaic cell can include a transparent conductive layer including cadmium stannate.

Abstract: A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used to treat an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been found to improve sheet resistance (Rs) properties, emittance, solar control properties, and/or durability of the coated article. In certain example embodiments, an ion source(s) and a sputtering target(s) used in forming the IR reflecting layer, or any other suitable layer, may be located in a common deposition chamber of an apparatus used in forming at least part of the coating.

Abstract: A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. Ion beam treatment is performed on a layer(s) of the coating. For example, a silicon nitride layer of a low-E coating may be ion beam treated. It has been found that ion beam treatment, for example, of a silicon nitride underlayer is advantageous in that sodium migration from the glass substrate toward the IR reflecting layer(s) can be reduced during heat treatment.

Abstract: An absorption type multi-layer film ND filter having a substrate formed of a resin film and provided on at least one side thereof an absorption type multi-layer film formed of oxide dielectric film layers and absorption film layers which are alternately formed in layers, characterized in that the oxide dielectric film layers are each constituted of an SiCyOx (0<y?0.1, 1.5<x<2) film having an extinction coefficient at a wavelength of 550 nm of from 0.005 to 0.05, formed by a physical vapor deposition process making use of a film-forming material composed chiefly of SiC and Si, and the absorption film layers are each constituted of a metal film having a refractive index at a wavelength of 550 nm of from 1.5 to 3.0 and an extinction coefficient at that wavelength of from 1.5 to 4.0, formed by a physical vapor deposition process; an outermost layer of the absorption type multi-layer film being constituted of one oxide dielectric film layer formed of the SiCyOx film.