Absorptive Patents (Class 204/192.28)
  • Publication number: 20020121434
    Abstract: A plurality of composite target materials containing a plurality of metal elements and oxygen, wherein the mix ratio of the metal elements is different individually for each of the target materials, are disposed in a chamber of a sputtering apparatus. The targets are sputtered one by one successively by use of a common ion gun to thereby form successively a laminate film comprising uniform films having a precise film thickness on a surface of a substrate so that the refractive index of the laminate film changes stepwise.
    Type: Application
    Filed: February 6, 2002
    Publication date: September 5, 2002
    Applicant: ALPS ELECTRIC CO., LTD.
    Inventor: Yoshihiro Someno
  • Publication number: 20020108848
    Abstract: Object: To provide a method for preparing an optical thin film having multiple optical layers with little inclusion of impurities and having a high density.
    Type: Application
    Filed: October 19, 2001
    Publication date: August 15, 2002
    Applicant: Asahi Glass Company, Limited
    Inventors: Masao Miyamura, Kazuhiko Mitarai, Satoru Takaki
  • Patent number: 6412307
    Abstract: A heat-treatable coated glass article comprises a substantially transparent substrate with a substantially transparent dual-function coating on a surface of the substrate. The coating provides low emissivity and high anti-solar performance properties. It comprises a first anti-reflection layer of dielectric material, preferably tungsten oxide. An infra-red reflective layer of silver metal and/or copper metal overlies the anti-reflection dielectric layer. A buffer layer, such as a chromium buffer layer, is positioned between the anti-reflection layer and the infra-red reflective layer. Also, optionally, a color control layer may be used, preferably being positioned between the anti-reflection layer and the substrate. A second buffer layer directly overlies the infra-red reflective layer. A second anti-reflection layer overlies the second buffer layer. In accordance with a method of manufacturing the coated article, each of the layers of the coating is deposited in turn by D.C.
    Type: Grant
    Filed: January 3, 2001
    Date of Patent: July 2, 2002
    Assignee: Turkiye Sise ve Cam Fabrikalari A.S.
    Inventor: Hülya Demiryont
  • Publication number: 20020068167
    Abstract: A silver oxide layer capable of absorbing and/or reflecting significant amounts of ultraviolet (UV) radiation, and a method of making the same. An ion beam including oxygen ions is utilized to densify silver material and transform it into a silver oxide inclusive layer. Due to the densification caused by the bombardment of oxygen ions, the resulting silver oxide layer is capable of absorbing and/or reflecting significant amounts of UV radiation. Such silver oxide layers may be utilized in the context of any suitable coating system where UV absorption and/or reflection is desired.
    Type: Application
    Filed: December 4, 2000
    Publication date: June 6, 2002
    Inventor: Vijayen S. Veerasamy
  • Patent number: 6383346
    Abstract: The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms. The thin film of aluminum oxide according to the present invention has little optical absorption and high refractive index in the ultraviolet and vacuum ultraviolet regions.
    Type: Grant
    Filed: March 21, 1997
    Date of Patent: May 7, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kenji Ando, Masaaki Matsushima, Minoru Otani, Yasuyuki Suzuki, Ryuji Biro, Hidehiro Kanazawa
  • Patent number: 6325901
    Abstract: At least an effective region of the face of a panel of a cathode ray tube is held within a vacuum chamber. After the vacuum chamber is hermetically sealed from the outside of the vacuum chamber, a thin film is formed on the face of the panel by using a film-forming means.
    Type: Grant
    Filed: October 19, 1998
    Date of Patent: December 4, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumasa Hirayama, Hitoshi Takeda, Hisashi Iijima, Takeo Ito, Sakae Kimura, Hisashi Chigusa, Yoshimitsu Aramaki
  • Patent number: 6264805
    Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.
    Type: Grant
    Filed: June 10, 1997
    Date of Patent: July 24, 2001
    Assignee: The Trustees of Princeton University
    Inventors: Stephen R. Forrest, Mark E. Thompson, Paul E. Burrows, Vladimir Bulovic, Gong Gu
  • Publication number: 20010008710
    Abstract: By heating a film comprising an indium-zinc oxide (IZO) as its main component under an ambient atmosphere of low-concentration oxygen, a transparent conductive film showing a high transmittance of about 80% or more in a wavelength region of 450 to 3200 nm can be obtained. The electrical resistivity of the transparent conductive film is about 3.0×10−3 &OHgr;-cm or less. A film with IZO as its main component is substantially in amorphous form or microcrystalline form, and such a film may be fabricated by sputtering.
    Type: Application
    Filed: August 26, 1999
    Publication date: July 19, 2001
    Inventors: HIROSHI TAKATSUJI, TADASHI HIROMORI, SATOSHI TSUJI
  • Publication number: 20010008207
    Abstract: The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms.
    Type: Application
    Filed: March 21, 1997
    Publication date: July 19, 2001
    Inventors: KENJI ANDO, MASAAKI MATSUSHIMA, MINORU OTANI, YASUYUKI SUZUKI, RYUJI BIRO, HIDEHIRO KANAZAWA
  • Publication number: 20010008206
    Abstract: Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, not only when sputtering in oxygen to produce an oxide coating, but also when sputtering in inert gas, nitrogen or a mixture of nitrogen and oxygen to produce coatings of silicon-chromium, silicon-chromium nitride or silicon-chromium oxynitride respectively.
    Type: Application
    Filed: September 8, 1997
    Publication date: July 19, 2001
    Inventor: JAMES J FINLEY
  • Publication number: 20010008706
    Abstract: A method for forming an oxide film on a substrate by a sputtering process using a target comprising a metal as the main component, wherein sputtering is carried out in an atmosphere which contains a gas containing carbon atoms.
    Type: Application
    Filed: May 19, 1999
    Publication date: July 19, 2001
    Inventors: JUNICHI EBISAWA, NOBUTAKA AOMINE, YASUO HAYASHI, SATORU TAKAKI
  • Patent number: 6210542
    Abstract: A substrate 2 is autorotatably installed in a vacuum chamber 1 at an upper part thereof. MgF2 granules 3 as a film source material are put in a quartz boat 4 and mounted on a magnetron cathode 5. The magnetron cathode 5 is connected through a matching box 6 to a 13.56 MHz radio frequency power source 7. Cooling water 8 for holding the temperature of the magnetron cathode 5 constant flows on a lower face of the magnetron cathode 5. A side face of the vacuum chamber 1 is provided with gas introduction ports 9, 10 for introducing gas in the vacuum chamber 1. A shutter 11 is placed between the magnetron cathode 5 and the substrate 2. This structure provides a process enabling forming a thin film at a high speed by sputtering, especially, a high speed sputtering process enabling forming a thin fluoride film free of light absorption in a high speed by sputtering.
    Type: Grant
    Filed: November 4, 1998
    Date of Patent: April 3, 2001
    Assignee: Olympus Optical Co., Ltd.
    Inventors: Ken Kawamata, Nobuaki Mitamura
  • Patent number: 6171458
    Abstract: A spectral selective absorbing surface on solar collector elements has a very high solar absorbing ability, in the range of 96% to 97% and a low thermal emittance, in the order of 10%, and can be produced with high capacity in industrial scale. A reactive gas in an amount of 1 to 50 cm 3/min kW, preferably 10 cm 3/min kW, distributed in the coating zone provides that the metal layer deposed onto the receiving material partly oxidizes during the deposition, whereby a layer is obtained that comprises a grain mixture of metallic material and metal oxide, whereby 40% to 80%, preferably about 50%, of metallic material is embedded into the metal oxide closest to the receiving material. The metallic material is successively decreased to about zero at the surface of the layer by increasing the addition of oxygen at the end of the coating zone.
    Type: Grant
    Filed: March 10, 1999
    Date of Patent: January 9, 2001
    Assignee: Sunstrip AB
    Inventor: Göran Hultmark
  • Patent number: 6171457
    Abstract: In the method of fabricating a CRT including a sputtering method for forming an anti-static layer and a spin-coating or spray-coating method for forming an anti-reflection layer on a CRT panel, a method of fabricating a low-resistance, anti-reflection CRT is characterized by applying a silicon oxide (SiO2) coating between the anti-static layer and the anti-reflection layer by a sputtering method. As a result, the CRT has enhanced strength of layers and a low surface resistance. Also, the screen is provided with a charge protection function in the surface, with reflectivity of an external light being mitigated. As a result, it is possible to enhance the contrast characteristics of the screen, to avoid leaving fingerprints on the screen, and also to eliminate unpleasant feeling of static electricity.
    Type: Grant
    Filed: June 24, 1998
    Date of Patent: January 9, 2001
    Assignee: LG Electronics, Inc.
    Inventor: Yeoung-Ku Kim