Abstract: An integrated micro-optical system includes at least two wafers with at least two optical elements provided on respective surfaces of the at least two wafers, at least one of the two optical elements being a spherical lens. The resulting optical system presents a high numerical aperture. One of the optical elements may be a refractive element formed in a material having a high index of refraction.

Abstract: The present invention provides a method for easily obtaining a perpendicular magnetic recording medium having the desired magnetic properties by sputtering, and a magnetic recording medium obtained by this method. The perpendicular magnetic recording medium of the present invention is a perpendicular magnetic recording medium comprising at least a soft magnetic underlayer, an underlayer, a magnetic recording layer, a protective layer, and a liquid lubricant layer sequentially laminated on a nonmagnetic substrate, wherein the magnetic recording layer is a rare earth-transition metal alloy amorphous film formed by sputtering, and the formation of the magnetic recording layer by sputtering is performed using a film-forming gas incorporating 2% or more, but 60% or less of an H2 gas. The present invention also discloses a method for producing the perpendicular magnetic recording medium.

Abstract: An electric field is provided in a first direction between an anode and a target having a flat disposition. A magnetic field is provided such that the magnetic flux lines are in a second direction substantially perpendicular to the first direction. The magnet structure may be formed from permanent magnets extending radially in a horizontal direction, like the spokes of a wheel, and from magnetizable pole pieces extending vertically from the opposite ends of the spokes. The permanent magnets and the pole pieces define a well. The target is disposed in the well so that its flat disposition is in the same direction as the magnetic flux lines. Molecules of an inert gas flow through the well. Electrons in the well move in a third direction substantially perpendicular to the first and second directions. The electrons ionize molecules of the inert gas. The ions are attracted to the target and sputter atoms from the surface of the target. The sputtered atoms become deposited on a substrate.

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A multilayer superlattice having a structure with many interfaces of magnetic/non-magnetic layers could increase the coercivity of a magnetic recording medium by increasing the interfacial anisotropy. A soft magnetic layer comprising interstitial nitrogen between the substrate and the multilayer superlattice reduces the surface roughness between the substrate magnetic layer. This in turn reduces the fly height and boosts the coercivity of the magnetic recording medium.

Abstract: The magnetic tape recording head of the present invention is formed with magnetic poles that are comprised of a laminated NiFeN/FeN structure. The method for fabricating the magnetic poles utilizes an additive photolithographic technique including a bilayer liftoff resist. In this fabrication method magnetic pole trenches are formed in the bilayer liftoff resist such that an undercut exists in the liftoff layer. Thereafter, the laminated NiFeN/FeN structure is sputter deposited into the trench, followed by the wet chemical removal of the bilayer resist.

Abstract: A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnetic free layer in a third chamber by ion beam sputtering, and then forming the remainder of a spin valve sensor through the antiferromagnetic layer in a fourth chamber by DC magnetron sputtering.

Abstract: Methods and apparatus are provided for annealing of materials deposited in a processing chamber to form silicide layers. In one aspect, a method is provided for treating a substrate surface including positioning a substrate having silicon material disposed thereon on a substrate support in a chamber, forming a metal layer on at least the silicon material, and annealing the substrate in situ to form a metal silicide layer. In another aspect, the method is performed in an apparatus including a load lock chamber, an intermediate substrate transfer region connected to the load lock chamber, the intermediate substrate transfer region comprising a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber disposed on the first substrate transfer chamber and an annealing chamber disposed on the second substrate transfer chamber.

Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3&sgr;) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a <200> texture content and less than 50% of a <111> texture content, (b) an initial pass-through flux factor (LPTF) of about 30% or greater; and (c) a homogeneous grain size of about 200 &mgr;m or less.

Abstract: A magnetic recording medium has a nonmagnetic substrate having applied thereon through a nonmagnetic underlayer a magnetic recording layer composed of a magnetic metal material. The nonmagnetic substrate has a smooth surface with an average surface roughness Ra of not more than 20 Å, a recesses-and protrusions-forming layer having stripe-like protrusions and recesses in the circumferential direction, formed on the substrate. A CrP or CrMoP reinforcing coat layer having a hardness higher than that of the recesses-and protrusions-forming layer is sandwiched between the substrate and the recesses-and-protrusions-forming layer.

Abstract: In a magnetic recording medium including an underlayer made of an anti-ferromagnetic material and a magnetic recording layer made of a material containing cobalt as the principal component that are serially disposed on a non-magnetic substrate, an intermediate layer made of a ferromagnetic material is sandwiched between the underlayer and the magnetic recording layer. A magnetic recording medium capable of providing an improved S/N ratio and high-density recording is provided. A production method for such a magnetic recording medium and a magnetic storage apparatus using the same are also provided.

Abstract: A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnetic free layer in a third chamber by ion beam sputtering, and then forming the remainder of a spin valve sensor through the antiferromagnetic layer in a fourth chamber by DC magnetron sputtering.

Abstract: In this invention, an ultra thin layer of CoCr alloy nucleation layer is sputtered at an extremely low deposition rate above a predominantly (200) oriented Cr film followed by a CoCrPt based alloy sputtered film at higher rates and moderate temperatures. This structure creates a media which has very high Hc, and excellent PW50, low noise and excellent low TNLD values. By using this technique, the CoCrPt magnetic film achieves excellent in-plane crystallographic orientation, and high Hc is achieved with minimal amount of Pt addition to the magnetic film. The method allows very fine grain structure of cobalt to be formed which contributes to good signal to noise ratio. A fine grain structure combined with chromium segregation between the grains improve the signal to noise ratio even more. A high degree of in-plane c-axis orientation is achieved in the cobalt layer which provides very high hysteresis loop squareness which helps to improve the OW and TNLD.

Abstract: A pinned layer structure of a spin valve sensor is formed by sputter deposition of cobalt iron (CoFe) in a nitrogen (N2) atmosphere. This method permits a wider range of deposition times of a copper spacer layer to achieve a desirable ferromagnetic coupling field (HF) between the pinned layer structure and a free layer structure in the spin valve sensor.

Abstract: Apparatus for forming a multilayer film on at least one surface of a substrate comprises a vacuum chamber including: (a) a pair of parallel top and bottom walls connected by a side wall; (b) at least one entry/exit means in the side wall for insertion and withdrawal of a substrate from the chamber; (c) a plurality of spaced-apart, radially extending, linearly elongated sputtering sources arranged in a co-planar array adjacent one of the top or bottom walls of the chamber, each of the linearly elongated sputtering sources having a length and a width; and (d) a gripper/transporter for gripping and moving a substrate in a generally circular, planar path past each of the plurality of radially extending sputtering sources, such that the at least one deposition surface of the substrate faces each of the sputtering sources during movement along the circular path, for deposition of the multilayer film thereon.

Abstract: The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magneticfilm, and the magnetic films are coupled with one another by magnetostatic coupling via the non-magnetic film. This element has an improved thermal resistance. Furthermore, the invention provides a magnetoresistive element in which the pinned magnetic layer is as described above. The magnetic films can be coupled with one another by magnetostatic coupling or antiferromagnetic coupling generating negative magnetic coupling. In this element, the magnetic field shift is reduced. Furthermore, the invention provides a magnetoresistive element in which at least one of the magnetic layers sandwiching the intermediate layer includes an oxide ferrite having a plane orientation with a (100), (110) or (111) plane. A magnetic field is introduced in a direction of the axis of easy magnetization in the plane.

Abstract: A collimator system is disclosed for use in an in-line pass-by sputtering system during the fabrication of recording media to improve the data storage density and read/write performance characteristics of the media. The collimator system includes a collimator shield and a collimator honeycomb. The shield includes a rectangular tube having a flange and a frame at inner and outer ends, respectively. The various components of the shield in part serve to prevent possible contamination of substrates due to target atom accumulation on the chamber walls during the sputtering process. The collimator honeycomb is provided for blocking target atoms from contacting the substrate at low incident angles. The collimator honeycomb is comprised of a plurality of collimators which are identical to each other. In a preferred embodiment, the collimators have a hexagonal cross-section taken from a perspective perpendicular to the substrate. The collimators may also have other geometric shapes.

Abstract: An integrated micro-optical system includes at least two wafers with at least two optical elements provided on respective surfaces of the at least two wafers. An active element having a characteristic which changes in response to an applied field may be integrated on a bottom surface of the wafers. The resulting optical system may present a high numerical aperture. Preferably, one of the optical elements is a refractive element formed in a material having a high index of refraction.

Abstract: A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10−9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate body by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber in a vacuum, state controlled to higher than 10−9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate body by sputtering a prescribed target by using the mixture of the gases (a) and (b).

Abstract: A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.

Abstract: A multilayer superlattice having a structure with many interfaces of magnetic/non-magnetic layers could increase the coercivity of a magnetic recording medium by increasing the interfacial anisotropy. A Si-containing seedlayer between a soft underlayer and the multilayer superlattice further boosts the coercivity of the magnetic recording medium.

Abstract: A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (FeXOY). In the preferred embodiment the pinning layer is composed of cobalt (Co) or cobalt iron (CoFe) which is exchange coupled to the iron oxide (FeXOY) second film of the pinning layer. This structure results in an improved magnetoresistive coefficient (dr/R) which is substantially maintained after annealing so that the magnetic head has good thermal stability when subjected to high temperatures in the presence of a field that is antiparallel to the pinned orientation of the magnetic moment of the pinned layer.

Abstract: Reproducible texturing of magnetic recording media is enhanced by sputtering a buffer layer, such as Ni—P, on a nonmagnetic substrate, prior to sputtering a textured bump layer. A magnetic recording medium comprising a sputter textured metal layer and high coercivity is achieved by employing an underlayer, such as NiAl or FeAl, preferably a composite underlayer containing a chromium or chromium-alloy layer and a NiAl layer, on the sputter textured layer. Advantageously, the buffer layer, underlayer, textured bump layer, magnetic layer and carbon overcoat can be sputter deposited in a single apparatus.

Abstract: Method for manufacturing two disk-shaped workpieces using a sputter station includes providing a load-lock chamber and a sputtering source with a sputter surface. A transport chamber interlinks the chamber and source at an opening from the transport chamber to the load-lock chamber and at an opening from the transport chamber to the sputtering source. These openings are opposite each other. A rotatable transport arrangement in the transport chamber rotates around an axis extending between the openings and can carry only two workpieces at a time. The transport arrangement has an extendable/retractable arm arranged radially with respect to the axis. The arm is workpiece carrier to the two disk-shaped workpieces.

Abstract: A method for making a nickel/silicon sputter target, targets made thereby and sputtering processes using such targets. The method includes the step of blending molten nickel with sufficient molten silicon so that the blend may be cast to form an alloy containing no less than 4.5 wt % silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in a conventional magnetron sputter process; that is, one can be positioned near a cathode in the presence of an electric potential difference and a magnetic field so as to induce sputtering of nickel ion from the sputter target onto the substrate.

Abstract: A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.

Abstract: In a method of producing an information recording medium, any recording film is not substantially formed on the slope portions of a substrate in which slope portions having surfaces non-parallel to the surface of the information track of an information recording medium are provided on the opposite sides of the information track. A recording film of a predetermined film thickness is formed on the information track.

Abstract: A magnetic recording medium having a dual magnetic structure layer for the separate control of KuV/kT and SNR to achieve high SNR, increased overwrite (OW) capability and good thermal stability. The magnetic recording medium includes a nonmagnetic Al—Mg substrate followed by the addition of a NiP layer electrolessly plated on the surface of the substrate. A dual-film magnetic layer is formed on the substrate. The dual-film magnetic structure comprises an upper first magnetic film of CoCrPtB alloy and a lower second magnetic film of a CoCrPtTaB alloy. The composition and thickness of each magnetic film in the dual-film magnetic structure allows for the simultaneous ability of the magnetic recording medium to obtain high SNR, increased OW capability and good thermal stability to improve the overall performance of the media.

Abstract: An object of the present invention is to provide a recording head having a magnetic pole simultaneously possessing a high saturation magnetic flux density, a high permeability and a high electric resistivity, and the magnetic pole of the recording head is a polycrystalline film comprising Fe whose content is not less than 57.5 atomic % and not more than 94.5 atomic %; one or more kinds of elements selected from the element group of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Rh, whose whole content is not less than 1 atomic % and not more than 15 atomic %; N whose content is not less than 0.5 atomic % and not more than 10 atomic %; and O whose content is not less than 1.5 atomic % and not more than 22.5 atomic %.

Abstract: A method employs an RF magnetron sputtering system under specific process conditions for making shield and pole piece ferromagnetic layers of a read write magnetic head wherein the magnetic anisotropy HK of the ferromagnetic layers is substantially maintained without easy axes switching when annealed along their hard axes in the presence of a magnetic field (hard axis annealing).

Abstract: The invention discloses a method for coating foil comprised of nickel or a nickel alloy by sputtering a layer comprised of a metal compound on the foil in a vacuum. The foil is treated in an argon plasma with a pressure of 1031 3 to 10−2 millibar, for a variable time with a variable rate, and with energy of the plasma ions. A chromium oxide layer or a layer containing chromium oxide is successively sputtered by means of a reactive magnetron atomizing of at least one target comprised of chromium or an alloy containing chromium. The layer is sputtered with at least one atomization source in an argon-oxygen mixture with a pressure of 10−3 to 10−2 millibar. The operating point is constantly maintained in given boundaries and the foil is bonded in a defined thermal contact with a thermal buffer when the foil is being coated. The foil is coated until a given interference color pertaining to an interference of a first or second order is reached on the foil.

Abstract: A method of coating of thin film coated magnetic disks and thin film magnetic disks made thereby is described. In accordance with the invention, a barrier layer is deposited on the substrate before the underlayer film(s) to increase the corrosion resistance of metallic substrate magnetic disks and, in the case of nonmetallic substrates, to reduce the diffusion of water to the substrate and of freely moveable ions from the substrate. Preferably the barrier layer is deposited by medium frequency pulsed sputtering at a frequency of 10 to 200 kHz and a pulse length to pulse pause ratio from 5:1 to 1:10. Aluminum or chromium are the preferred materials for the barrier layer. Additional improvements may be achieved where the sputtering process gas contains a proportion of oxygen and/or nitrogen.

Abstract: High areal density magnetic recording media exhibiting high magnetic performance, e.g., narrow PW50, and high OW, and high SNR, are formed with a NiAlRu seedlayer. Embodiments of the present invention include sputter depositing a NiAlRu seedlayer on a non-magnetic substrate and sequentially depositing thereon a Cr or Cr alloy underlayer, e.g., CrMo, CrMn, CrV or CrW, a magnetic layer, e.g., a Co—Cr-containing magnetic alloy layer, and a protective overcoat, e.g., a carbon-containing protective overcoat.

Abstract: A magnetic recording medium such as a magnetic disk comprises a substrate of NiP or ceramic glass on which is sputtered an underlayer of TiAl or other alloy which has a L10 structure or a disordered fcc structure. A magnetic layer of a cobalt alloy is then sputtered on the underlayer with the magnetic layer having a magnetization which is perpendicular to the layer. A carbon overcoat can be sputtered on the cobalt alloy magnetic layer with a lubricant layer deposited on the carbon overcoat.

Abstract: A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (Fe2O3) or (Fe3O4). In the preferred embodiment the pinning layer is composed of cobalt (Co) or cobalt iron (CoFe) which is exchange coupled to the iron oxide (Fe2O3) or (Fe3O4) second film of the pinning layer. This structure results in an improved magnetoresistive coefficient (dr/R) which is substantially maintained after annealing so that the magnetic head has good thermal stability when subjected to high temperatures in the presence of a field that is antiparallel to the pinned orientation of the magnetic moment of the pinned layer.

Abstract: An integrated micro-optical system includes at least two wafers with at least two optical elements provided on respective surfaces of the at least two wafers, at least one of the two optical elements being a spherical lens. The resulting optical system presents a high numerical aperture. One of the optical elements may be a refractive element formed in a material having a high index of refraction.

Abstract: A method employs an RF magnetron sputtering system under specific process conditions for making shield and pole piece ferromagnetic layers of a read write magnetic head wherein the magnetic anisotropy HK of the ferromagnetic layers is substantially maintained without easy axes switching when annealed along their hard axes in the presence of a magnetic field (hard axis annealing).

Abstract: A method for making a nickel/silicon sputter target, targets made thereby and sputtering processes using such targets. The method includes the step of blending molten nickel with sufficient molten silicon so that the blend may be cast to form an alloy containing no less than 4.5 wt .% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in a conventional magnetron sputter process; that is, one can be positioned near a cathode in the presence of an electric potential difference and a magnetic field so as to induce sputtering of nickel ion form the sputter target onto the substrate.

Abstract: A method of making a polycrystalline structure film includes causing metallic atoms and molecules of compound to deposit over the surface of a substrate. When the metallic atoms and the molecules of the compound are simultaneously deposited on the substrate, fine and smallest metallic nucleation sites can be formed over the surface of the substrate at a higher density per unit area. Subsequent deposition of metallic atoms enables generation of fine and smallest crystal grains consisting of the metallic atoms.

Abstract: A magnetically permeable material comprising a substantially amorphous permalloy film is disclosed. The substantially amorphous permalloy film is formed by ion-beam sputtering. The substantially amorphous permalloy film exhibits improved output amplitude and noise characteristics.

Abstract: Sputter-deposited amorphous metal oxide films on substrates comprising an aluminum-containing support and a Ni-containing pre-coat reduce Ni ion migration significantly from the substrate onto the top surface of the magnetic recording media. Longitudinal magnetic recording media deposited on metal oxide sealing layers have very good magnetic recording performances and are suitable for high density recording application.

Abstract: The present invention is directed to an MR element and a thin film magnetic head that do not cause an increase in the electrical resistance value due to the presence of dead zones. When forming passive areas that include magnetic domain control films and conductive films at the two sides of a central active area through a vacuum film formation method, the magnetic domain control films are formed under film forming conditions that are different from the film forming conditions under which the conductive films are formed to ensure that the degree to which the conductive films overlap the central active area is set larger than the degree to which the magnetic domain control films overlap the central active area.

Abstract: A preferred method of the present invention provides an improved thin film for carrying magnetic flux. With the preferred method, the magnetic thin film may be formed by depositing Fe by reactive sputtering using N2 to form a thin film comprising &agr;-Fe and &ggr;-Fe4N. With this method, the relative percentage of &ggr;-Fe4N in the deposited film is increased to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N. Increasing &ggr;-Fe4N increases resistivity while expanding lattice constants to provide improved coercivity at higher resistivity. Increasing the percentage of &ggr;-Fe4N to provide expanding lattice constants for both the &agr;-Fe and the &ggr;-Fe4N may be accomplished by adjusting sputtering power, N2 gas percentage, a flow rate of N2, and substrate bias.

Abstract: A method prepares the top exposed surface of a pinning layer after its sputter deposition for an improved exchange coupling with a sputter deposited pinned layer even though the top surface of the pinning layer has been degraded by exposure to the atmosphere. In a preferred method the relatively thick pinning layer is sputter deposited in a first chamber which has a high sputtering rate and is transferred to a second sputtering chamber where the pinned layer, as well as other layers of a spin valve sensor, are sputter deposited. After transfer to the second sputtering chamber the top surface of the nickel oxide (NiO) pinning layer is sputter etched and a thin layer of nickel oxide (NiO) is sputter deposited thereon followed by sputter deposition of the pinned layer. In a preferred embodiment the thickness of the nickel oxide (NiO) pinning layer portion sputter deposited in the second chamber is approximately 40 Å.

Abstract: A solid freeform fabrication process and apparatus for making a three-dimensional object.

Abstract: A solid freeform fabrication process and apparatus for making a three-dimensional object. The process comprises the steps of (1) operating a multiple-channel material deposition sub-system for dispensing droplets of selected liquid compositions and solid powders at predetermined proportions; (2) providing an object platform in close working vicinity to the deposition sub-system to receive the deposition materials therefrom; and (3) during the material deposition process, moving the deposition sub-system and the platform relative to each other in an X-Y plane defined by first and second directions and in a Z direction orthogonal to the X-Y plane so that the materials are deposited to form a first layer of the object. These steps are repeated to deposit multiple layers for forming a three-dimensional shape.

Abstract: A magnetic multi-layer film manufacturing apparatus has a transferring chamber, a plurality of film-depositing chambers, and a robotic transferring device. Each film-depositing chamber has a rotatable substrate holder, a plurality of targets positioned at an incline on an opposing interior surface from the substrate holder, and a double layer rotating shutter mechanism and is controllable to deposit at least one layer of a magnetic multi-layer film structure. Magnetic multi-layer film structures are formed by depositing a plurality of magnetic films divided into a plurality of groups, each one of the plurality of groups deposited in an associated one of the plurality of film-depositing chambers continuously in a laminated state. A first division between successive groups of magnetic films is between a metal oxide film and a magnetic layer continuous therewith and a second division is between an antiferromagnetic layer and a magnetic layer continuous therewith.

Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is separated by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: A Co-Pt based magnetic alloy which has been doped with a relatively high amount of nitrogen, e.g., or above 1 at. % is obtained having high coercivity, for example in the range of 1400 Oe or above, and an increased signal-to-noise ratio as compared to the same Co-Pt based alloy which has not been doped with nitrogen. The alloy is vacuum deposited, for example, by sputtering, and the nitrogen may be introduced from the sputtering gas or from the sputtering target.