Abstract: A sputtering system comprises a magnetron assembly for depositing liquid metal films on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target and a set of one or more shields forming a chamber between the planar and the rotatable magnetron.

Abstract: A C-containing FePt-based sputtering target for forming a magnetic recording film, wherein a ratio of an X-ray diffraction peak intensity of a graphite (002) plane in a cross section perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a graphite (002) plane in a plane horizontal to a sputtering surface is 2 or more. A magnetic recording layer is configured from a magnetic phase such as an Fe—Pt alloy and a nonmagnetic phase that separates the magnetic phase, and the sputtering target is a ferromagnetic material sputtering target in which carbon is used as a nonmagnetic phase material. When sputtered, the ferromagnetic material sputtering target is effective in preventing the generation of particles caused by an abnormal discharge originating from carbon, which is prone to aggregate.

Abstract: A process for coating a part comprises the steps of providing a chamber which is electrically connected as an anode, placing the part to be coated in the chamber, providing a cathode formed from a coating material to be deposited and platinum, and applying a current to the anode and the cathode to deposit the coating material and the platinum on the part.

Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

Abstract: Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.

Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Abstract: A sputtering target includes a conductive barium titanate sintered material with generation density of crystal grain aggregate (12) having a grain diameter of 10 ?m or more on a cleavage surface of less than 0.2 piece/cm2.

Abstract: A silver-based cylindrical target is provided. The target consists of silver or a single-phase silver alloy in which an additive component is solid-soluted, wherein a ratio A/B is 0.8-1.2, A being a diameter of crystal grains in a direction along a central axis of a cylinder in a cross section including the central axis of the cylinder; and B being a diameter of crystal grains in a direction perpendicular to the central axis, an oxygen content is 100 ppm or less, and a content of non-metallic inclusions is 20 ppm or less.

Abstract: Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 ?m or larger within a 1 mm2 cross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 ?m and a relative density of at least 85%.

Abstract: Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fea—Co100-a)100-b-c-d—Tab—Nbc-Md, wherein 0<a?80, 0?b?10, 0?c?15, 5?b+c?15, 2?d?20, 15?b+c+d?25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ?fB at 300° C. of 0.4% or more.

Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

Abstract: A method of fabricating a sputtering target is provided. The method includes preparing a first powder material, wherein the first powder material includes tin oxide; preparing a mixture by mixing the first powder material and a second powder material, wherein the second powder material includes carbon; and fabricating the sputtering target by compressing and sintering the mixture simultaneously in a reducing atmosphere.

Abstract: A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 ?m2 or less. A process for producing a sputtering target for a magnetic recording medium, wherein an alloy cast ingot is subject to heat treatment, thereafter subject to primary rolling which includes at least one pass of cold rolling, thereafter subject to secondary rolling, and machined to prepare a target. The obtained sputtering target for a magnetic recording medium has few cracks in the B-rich phase and has a high leakage flux density, and by using this target, it is possible to stabilize the discharge during sputtering, suppress arcing which occurs from cracks in the B-rich phase, and suppress the generation of particles.

Abstract: A method for manufacturing an organic light-emitting display apparatus including: forming an organic light-emitting device on a substrate, the organic light-emitting device including a first electrode, a second electrode, and an intermediate layer including at least an organic emission layer; and forming a thin film encapsulating layer on the organic light-emitting device, wherein the thin film encapsulating layer includes at least one inorganic film including a low temperature viscosity transition (LVT) inorganic material and an oxide, and the oxide includes zirconium-tungsten oxide or lithium-aluminum-silicon oxide.

Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.

Abstract: Provided is a tungsten sintered compact sputtering target, wherein the purity of the tungsten is 5N (99.999%) or more, and the content of impurity carbon in the tungsten is 5 wtppm or less. An object of the present invention is to decrease the specific resistance of a tungsten film sputter-deposited by using a tungsten sintered compact sputtering target by reducing a carbon content in the tungsten target.

Abstract: Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within ±200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more.

Abstract: A silver-based magnesium alloy thin film is provided for the semi-reflective coating layer of optical discs. This alloy has moderate to high reflectivity and reasonable corrosion resistance in the ambient environment.

Abstract: A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 ?m and a long side of 50 to 300 ?m formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 ?m around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 ?m or less, a ten-point average roughness Rz is 0.4 ?m or less, a distance between local peaks (roughness motif) AR is 120 ?m or less, and an average length of waviness motif AW is 1500 ?m or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof.

Abstract: Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mm2 or higher, and a bulk resistivity of 1 m?·cm or less. The number of 0.05 mm2 or larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cm2 area of the target surface is 1 or less on average.

Abstract: A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target.

Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the sputtering target contains one or more types of Zr and W in a total amount of 100 wt ppm or more and 15000 wt ppm or less, and has a relative density of 97% or higher. An object of this invention is to provide a ferromagnetic material sputtering target containing chromium oxide with low generation of particles capable of maintaining high density and with uniformly pulverized oxide phase grains.

Abstract: A method of fabricating a sputtering target, a sputtering target fabricated by the method, and an organic light-emitting display apparatus fabricated by using the sputtering target. The sputtering target may be used for forming a thin film encapsulation layer. The sputtering target includes tin oxide as a main component, and a copper fluoride compound as a dopant.

Abstract: The Li-containing transition metal oxide sintered compact of the present invention includes Li and a transition metal, and further includes Al, Si, Zr, Ca, and Y as impurity elements, of which contents are controlled to the following ranges: Al?90 ppm; Si?100 ppm; Zr?100 ppm; Ca?80 ppm; and Y?20 ppm, wherein the sintered compact has a relative density of 95% or higher and a specific resistance of lower than 2×107 ?cm. The present invention makes it possible to stably form Li-containing transition metal oxide thin films useful as the positive electrode thin films of secondary batteries or the like at a high deposition rate without causing abnormal discharge.

Abstract: The subject of the invention is an essentially ceramic target for a sputtering device, especially for magnetically enhanced sputtering, said target comprising predominantly nickel oxide, the nickel oxide NiOx being oxygen-deficient with respect to the stoichiometric composition.

Abstract: A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 ?m and a long side of 50 to 300 ?m formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 ?m around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: The present invention relates to an oxide sputtering target. By using the oxide sputtering target for formation of a protective film for an optical recording medium, a film, which has high storage stability and breakage resistance due to flexibility, can be deposited. Also, it can be utilized for direct-current sputtering and forms a less amount of particles during sputtering. The oxide sputtering target is made of an oxide sintered body including: with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total content amount; 7 at % or more of Sn; and the balance Zn and inevitable impurities, wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less.

Abstract: Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 ?m or more for samples of 100×100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90° C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

Abstract: The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

Abstract: The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the deposition rate of this Ag alloy film by sputtering is as high as that of a pure Ag film. Provided is an Ag alloy film useful as a reflecting film and/or a transmitting film or as an electrical wiring and/or an electrode, including 0.1 to 1.5 atomic % of at least one element selected from Pd, Au and Pt, and 0.02 to 1.5 atomic % of at least one element selected from at least one rare earth element, Bi and Zn with the balance being Ag and inevitable impurities.

Abstract: A high-purity copper sputtering target, wherein a Vickers hardness of a flange part of the target is in a range of 90 to 100 Hv, a Vickers hardness of an erosion part in the central area of the target is in a range of 55 to 70 Hv, and a crystal grain size of the erosion part is 80 ?m or less. This invention relates to a high-purity copper sputtering target that does not need to be bonded to a backing plate (BP), and aims to provide a high-purity copper sputtering target capable of forming a thin film having superior uniformity by enhancing a strength (hardness) of the flange part of the target, and reducing an amount of warpage of the target. Moreover, the uniformity of the film thickness is improved by adjusting the (111) orientation ratio of the erosion part and the flange part in the target.

Abstract: A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.

Abstract: Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate.

Abstract: Provided is a high-purity copper-chromium alloy sputtering target comprising 0.1 to 10 wt % of Cr and the remainder being Cu and inevitable impurities, wherein when the number of precipitated Cr grains in a 100 ?m square area is counted at different five areas randomly selected on the surface of the target, the difference between the largest and the smallest numbers of counted precipitated Cr grains is less than 40. The term “precipitated Cr grains” refers to the grains each having a Cr content of 70% or more and having a grain size of 1 to 20 ?m. Thus, a thin film having excellent uniformity can be formed by adding an appropriate amount of a Cr element to copper and reducing the in-plane Cr variation of the sputtering target. In particular, the invention provides a high-purity copper-chromium alloy sputtering target that is useful for improving the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.

Abstract: An Fe—Pt—Ag—C-based sintered compact sputtering target having a composition represented by a formula (Fe100-X—PtX)100-Y-Z—AgY-CZ (wherein X represents a numerical value satisfying a formula 35?X?55; Y represents a numerical value satisfying a formula 0.5?Y?15; and Z represents a numerical value satisfying a formula 15?Z?55) when expressed in an atomic ratio, and having a relative density of 93% or more. A method for producing an Fe—Pt—Ag—C-based sintered compact sputtering target, characterized in that an Fe—Pt—C sintered compact is produced in advance, the sintered compact is pulverized to produce a pulverized powder, the pulverized powder is mixed with a Ag powder, and the resultant mixed powder is subject to sintering at a temperature lower than a melting point of Ag.

Abstract: A zinc oxide (ZnO)-based sputtering target which is available for DC sputtering and a photovoltaic cell having a passivation layer deposited using the same. The ZnO-based sputtering target includes a sintered body made of ZnO, the ZnO being doped with 10 to 60% by weight gallium oxide, and a backing plate bonded to the rear surface of the sintered body to support the sintered body. The passivation layer can prevent a change in the composition of the light-absorbing layer from lowering an efficiency.

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract: Provided are a crystalline alloy having significantly better thermal stability than an amorphous alloy as well as glass-forming ability, and a method of manufacturing the crystalline alloy. The present invention also provides an alloy sputtering target that is manufactured by using the crystalline alloy, and a method of manufacturing the alloy target. According to an aspect of the present invention, provided is a crystalline alloy having glass-forming ability which is formed of three or more elements having glass-forming ability, wherein the average grain size of the alloy is in a range of 0.1 ?m to 5 ?m and the alloy includes 5 at % to 20 at % of aluminum (Al), 15 at % to 40 at % of any one or more selected from copper (Cu) and nickel (Ni), and the remainder being zirconium (Zr).

Abstract: Provided is a sputtering target for a magnetic recording film. The sputtering target has a peak intensity ratio (IG/ID) of a G-band to a D-band of 5.0 or more in Raman scattering spectrometry. It is an object of the present invention to produce a magnetic thin film having a granular structure without using a high cost co-sputtering apparatus and to provide a sputtering target, in particular, an Fe—Pt-based sputtering target for a magnetic recording film, where carbon particles are dispersed in the target. Since carbon is a material which is not susceptible to being sintered and is susceptible to form aggregates, a conventional carbon-containing sputtering target has the problem that detachment of carbon lumps occurs during sputtering to result in generation of a large number of particles on the film. The present invention also addresses the problem of providing a high density sputtering target that can overcome the disadvantages.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

Abstract: A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

Abstract: Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.

Abstract: Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.

Abstract: An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.

Abstract: An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.