Abstract: A magnetron plasma apparatus boosted by hollow cathode plasma includes at least one electrically connected pair of a first hollow cathode plate and a second hollow cathode plate placed opposite to each other at a separation distance of at least 0.1 mm and having an opening following an outer edge of a sputter erosion zone on a magnetron target so that a magnetron magnetic field forms a perpendicular magnetic component inside a hollow cathode slit between plates and, wherein the plates and are connected to a first electric power generator together with the magnetron target to generate a magnetically enhanced hollow cathode plasma in at least one of a first working gas distributed in the hollow cathode slit and a second working gas admitted outside the slit in contact with a magnetron plasma generated in at least one of the first working gas and the second working gas.

Abstract: A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.

Abstract: A sputtering apparatus includes a power application device configured to apply power to set a cathode body and a cathode magnet to an equipotential. The power to be applied to the cathode magnet is supplied via a spline arranged between the cathode body and a magnet rotating shaft attached to the cathode magnet.

Abstract: In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

Abstract: An apparatus for the pretreatment and/or for the coating of an article in a vacuum chamber having at least one cathode arranged therein having at least one HIPIMS power source and also having a device which generates a tunnel-like magnetic field in front of the surface of the cathode, is characterized in that the device is designed in order to generate the tunnel-like magnetic field in front of a portion of the surface of the cathode and in that the device is displaceable relative to the cathode to allow the magnetic field to act in front of at least one further portion of the surface of the cathode. The device can consist of permanent magnets, which are displaced relative to the cathode, or of magnetic field generating coils, which can be movably arranged or stationary.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.

Abstract: The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material.

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Abstract: The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.

Abstract: A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.

Abstract: A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.

Abstract: Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (?1) with respect to a first pivot axis.

Abstract: A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.

Abstract: To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet 6 having a polarity different from that of the first magnet on the non-sputtering surface side.

Abstract: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

Abstract: The invention relates to apparatus and a method for applying coatings to substrates such as, for example, a lens or electronic component. The apparatus includes a coating chamber in which there is provided one or more magnetrons which include, typically, an at least partially oxidised metal or metal alloy. A carrier is provided for the substrates to be moved and held in the coating chamber and the carrier is formed from a plurality of units on which the substrates are positioned and the units can be brought together to form the carrier.

Abstract: A sputter gun is provided. The sputter gun includes a target and a first plate coupled to a surface of the target. A first magnet is disposed over a second magnet. A second plate coupled to a surface of the first magnet and a gap is defined between a surface of the second magnet and a surface of the first plate. A fluid inlet and a fluid outlet are disposed above a surface of the first magnet. A restriction bar is coupled to the second plate, wherein the restriction bar is configured to prevent a flow path of fluid through the first inlet to the second inlet unless the fluid traverses the gap defined between a surface of the second magnet and a surface of the first plate. Alternative configurations of the sputter gun are included.

Abstract: An adjustable shunt assembly for use with a sputtering magnetron having at least two magnets spaced from one another and disposed with respect to a sputtering target having a sputtering surface. The magnets define a longitudinal axis and the adjustable shunt assembly moves a shunt between the two magnets for altering the magnetic field therebetween. A transporter is used for moving the shunt so that such movement may be occurred without disassembling the components of the magnetron and such movement may also be done remotely. A method for moving such shunts is also disclosed.

Abstract: The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material.

Abstract: A sputtering apparatus and method are disclosed which can reduce deviations in the deposition thickness on the target object. The sputtering apparatus may include a chamber body and a targeting module. The targeting module may be positioned inside the chamber body and may include a source and at least one magnet unit, where the magnet unit may be configured to generate a magnetic field. Here, the magnet unit can be made to swing during a sputtering process.

Abstract: A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.

Abstract: Magnetic flux shunting pads for optimizing target erosion in sputtering processes are provided. In one embodiment, the invention relates to a sputtering system for countering uneven wear of a sputter target, the system including a sputter target having an emitting surface and a rear surface opposite to the emitting surface, a moving magnet assembly positioned proximate the rear surface and including a planar base and a magnet fixed to the planar base at a preselected point, the moving magnet assembly configured to be moved such that a position of the magnet relative to the rear surface is varied, and a magnetic shunting pad having a planar shape and positioned between the moving magnet assembly and the target, wherein the shunting pad includes uneven magnetic shunting characteristics.

Abstract: This disclosure provides systems, methods, and apparatus related to physical vapor deposition. In one aspect, an apparatus includes a magnet assembly including a magnet element, a substrate holder configured to hold a substrate, a target holder configured to hold a target positioned between the magnet assembly and the substrate, a motor configured to move the magnet assembly across a face of the substrate, and a controller. The controller includes program instructions for conducting a process including moving the magnet assembly across the face of the substrate using the motor to sputter material from the target onto the substrate. The material sputtered onto the substrate may have a substantially uniform thickness.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: One embodiment is directed to a magnetron assembly comprising a plurality of magnets, and a yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion. The end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion. The magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis.

Abstract: The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

Abstract: A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.

Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity whilst extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.

Abstract: Methods and apparatus for processing a substrate in a process chamber, include receiving process control parameters for one or more devices from a process controller to perform a first chamber process, determining a time to send each of the process control parameters to the one or more devices, for each of the one or more devices, adjusting the determined time to send each of the process control parameters using specific signal process delays associated with each of the one or more devices, and sending the process control parameters to each of the one or more devices at the adjusted times to perform the first chamber process, wherein the synchronization controller includes one or more output channels, each channel directly coupled to one of the one or more devices.

Abstract: A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma.

Abstract: A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.

Abstract: A thin film battery manufacturing method is provided for deposition of lithium metal oxide films onto a battery substrate. The films are deposited in a sputtering chamber having a plurality of sputtering targets and magnetrons. The sputtering gas is energized by applying a voltage bias between a pair of the sputtering targets at a frequency of between about 10 and about 100 kHz. The method can provide a deposition rate of lithium cobalt oxide of between about 0.2 and about 4 microns/hr with improved film quality.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: The nanoparticle production device includes a target provided with a nanoparticle source surface, and a magnetron generating a first magnetic field, the target being mounted on the magnetron and the first magnetic field forming field lines at the level of the nanoparticle source surface. The device further includes balancing means of the first magnetic field at the level of the target, arranged to close fleeing field lines of the first magnetic field and to keep said lines closed at the level of said nanoparticle source surface, said balancing means being distinct from the magnetron.

Abstract: A magnetron sputtering apparatus where a target is disposed to face a substrate installed in a vacuum chamber and magnets are disposed on a rear surface of the target, including a power supply unit configured to apply a voltage to the target; and a magnet array body including a magnet group arranged on a base body provided at the rear surface of the target. In the magnet array body, rod-shaped magnets each having different polarities at opposite ends thereof are disposed in a mesh shape on a surface of the base body facing the target; the mesh has a 2n polygonal shape (n being an integer greater than or equal to 2); permeable core members are disposed at intersection points of the mesh surrounded by the ends of the rod-shaped magnets; and end portions of the rod-shaped magnets which surround each of the core members have a same polarity.

Abstract: A magnetron sputtering system generates a high density plasma on a target by applying magnetic fields intersecting an electric field by using a plurality of magnets that are rotatably supported. The respective magnets are revolved and rotated so that the time variation of regions where a magnetic field (line of magnetic force) generated by the each magnet is orthogonal to an electric field is prevented from becoming monotonous. Further, the respective magnets are arranged to make the distances between the center of rotation and the center of revolution of the respective magnets different from each other, so that the regions where the magnetic field (line of magnetic force) generated by the each magnet is orthogonal to the electric field are dispersed in the radial direction of a target.

Abstract: A method of sputtering with sputtering apparatus is for depositing a layer upon a substrate. The apparatus includes a sputter target with a face exposed to the substrate and a magnetron providing a magnetic field that moves relative to the target face. The speed of movement of the field is controlled such that the uniformity of the deposition on the substrate is enhanced. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed. The selected speed may vary over the life of the target, with increased speeds becoming desirable as the target thins.

Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract: A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

Abstract: A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through Which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation :apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma. (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.

Abstract: A production method for nanoparticles is disclosed which allows excellent control of the production parameters and elevated production rates. It comprises a plurality of sputter targets arranged in a coplanar manner, a first gas supply located between the plurality of sputter targets, for emitting a stream of gas; and a plurality of magnetrons, one located behind each of the sputter targets. Each magnetron can have an independently controlled power supply, allowing close control. For example, the targets could be of different materials allowing variation of the alloying compositions. A plurality of further gas supplies can be provided, each further gas supply providing a supply of gas over a sputter target. The sputter targets can be arranged in a rotationally symmetric manner, ideally symmetrically around the first gas supply.

Abstract: The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention.

Abstract: Exemplary embodiments provide a multi-source deposition method and apparatus for the provision of coatings within relatively tight tolerances. An apparatus may be provided including control circuitry and a plurality of deposition sources for coating a substrate. The sources may be disposed a selectable distance away from the substrate and/or may be tilted at a selected angle. The control circuitry may utilize information indicative of an emission pattern associated with each of the sources to adjust a power to each of the sources during coating of the substrate. By rotating the substrate relative to the sources and/or controlling parameters such as source height, tilt angle, and source power, a substantially uniform coating thickness may be achieved on the substrate.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.