Abstract: The invention is directed a vacuum processing system having improved substrate heating and cooling facilities. An evacuable chamber of the system includes a first section in which a temperature of a substrate to be processed may be increased and a second section in which the temperature of a processed substrate may be decreased. A barrier may be provided to thermally isolate the first and second sections from each other.

Abstract: A coating apparatus deposits a first coating (single or multi-layered) onto a first side of a substrate (e.g., glass substrate) passing through the apparatus, and a second coating (single or multi-layered) onto the other or second side of the substrate. In certain example embodiments, the first coating may be deposited via sputtering while the second coating is deposited via ion beam deposition. In such a manner, it is possible to coat both sides of the substrate in a single apparatus in an efficient manner. In other embodiments, the coating apparatus may sputter a coating onto a first side of the substrate and ion beam mill at least one surface of the substrate as the substrate passes through the coating apparatus. In other embodiments of this invention, a dual mode chamber may be provided that is adapted to receive a removable ion beam module on one side of a substrate and a removable sputtering module on the other side of the substrate.

Abstract: A lock chamber (1) is isolated from the environment (U) by a lock-valve (3) and from a vacuum chamber configuration (7) by a lock valve (5). A turbo vacuum pump (13) acts upon the vacuum chamber configuration (7). An additional pump (9/15) is switchably (17) connected downstream from the pump, which switchably operates either as a prevacuum pump for the turbo vacuum pump (13) or as lock chamber pump.

Abstract: A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.

Abstract: A method for manufacturing a coated substrate disk, comprises linearly bringing the substrate on a mounting, into an evacuated transport chamber and rotating the mounting in the chamber. The mounting is then extended into a coating position and coating of the substrate takes place. The mounting is then linearly retracted into the chamber again and rotated into a position for guiding the substrate out of the chamber. These steps are repeated for several substrates and then a pump opening into the chamber is closed by means of the mounting or the substrate. The chamber is then flooded and vacuum-tightly closed and the pump opening is released. The chamber is evacuated and the substrate moving and coating steps are repeated for more substrates.

Abstract: A system and method for processing semiconductor wafers using different wafer processes utilizes multiple processing assemblies to efficiently perform these wafer processes. The wafer processes performed by the processing assemblies may vary with respect to operating parameters or the types of wafer processes, which allows customization of the wafer processes. Each of the processing assemblies is configured to sequentially process two or more semiconductor wafers at different processing positions by sequentially transferring the semiconductor wafers to the different processing positions using a wafer transfer carousel. As the semiconductor wafers are processed at one of the processing assemblies, the processed semiconductor wafers are sequentially transferred to the next processing assembly in an efficient manner. The sequential processing of the semiconductor wafers at each of the processing assemblies and the sequential transferring of the wafers contribute to an increased throughput.

Abstract: The present invention is directed to a sputtering device for depositing multi-layer films on a substrate, the sputtering device comprising at least one planar-magnetron-sputtering-cathode and at least one facing-targets-sputtering-cathode housed in a single vacuum chamber, and adapted such that each planar-magnetron-sputtering-cathode and facing-targets-sputtering-cathode can be selectively positioned for sputtering deposition onto a substrate.

Abstract: A magnetic multi-layer film manufacturing apparatus has a transferring chamber, a plurality of film-depositing chambers, and a robotic transferring device. Each film-depositing chamber has a rotatable substrate holder, a plurality of targets positioned at an incline on an opposing interior surface from the substrate holder, and a double layer rotating shutter mechanism and is controllable to deposit at least one layer of a magnetic multi-layer film structure. Magnetic multi-layer film structures are formed by depositing a plurality of magnetic films divided into a plurality of groups, each one of the plurality of groups deposited in an associated one of the plurality of film-depositing chambers continuously in a laminated state. A first division between successive groups of magnetic films is between a metal oxide film and a magnetic layer continuous therewith and a second division is between an antiferromagnetic layer and a magnetic layer continuous therewith.

Abstract: A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.

Abstract: In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

Abstract: Before submitting a sample, including a first material layered upon a substrate, to an ion milling process, whereby a second material is sputtered onto the surface of the first material and the sample is then submitted to an etching process, an irregularity is formed on the surface of the first material. The overall process results in the formation of cones, or micro-tip structures, which may then be layered with a layer of low work function material, such as amorphous diamond. The irregularity in the surface of the first material may be formed by polishing, sandblasting, photolithography, or mechanical means such as scratching.

Abstract: An exemplary configurable vacuum system is provided for use in coating or plating that provides the capability and versatility to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly, a mechanical drive, an electrical feed through, a filament, and a vacuum chamber. The vacuum table assembly may include a support frame, a sliding means, such as a roller or rollers, an insulated surface, and a platform operable to rotate and support the substrate. The mechanical drive is operable to rotate the platform, the electrical feed through provides an electrical signal to the substrate, and the filament is positioned relative the substrate. The vacuum chamber includes a main opening, an internal volume, and a receiving means, such as a railing or member, operable to receive and support the vacuum table assembly within the internal volume of the vacuum chamber and through the sliding means of the vacuum table assembly.

Abstract: There is described a disk processing and manufacturing equipment in which the processing chambers are stacked on top of each other and in which the disks move through the system on disk carriers which are adjustable to take disks of varying sizes. The disks enter the system through a load zone and are then installed into disk carriers. They move in the carriers sequentially through processing chambers at one level and then move to the other level in a lift or elevator. At this other level, the disks again move sequentially through the system on that level and then exit at an unload zone.

Abstract: An apparatus for depositing seed layers from a group of Cu, Ag or an alloy thereof on a substrate having narrow openings surrounded by a filed; the apparatus comprising a controller, said controller including instructions to deposit a conformal seed layer having a thickness of 50-500 Å oil the filed and to deposit a non-conformal seed layer having a thickness of 100-3000 Å on the filed and to stop depositing the seed layers prior to filling the narrow openings, such that the rermaining narrow openings are filled by electroplating. In accordance with the invention, substantially conformal and non-conformal seed layers me deposited in an apparatus where the conformal and non-conformal seed layer deposition steps can be carried out without breaking vacuum, or without exposing the wafer to the atmosphere between the deposition steps.

Abstract: A system and method for reducing and controlling the number of defects due to carbon inclusions on magnetic media is disclosed. A diamond like carbon protective layer is deposited on magnetic media using a rotary cathode target assembly. The target and cathode are cylindrical in shape and are mounted on holder that allows the target and cathode to rotate while holding a magnet fixed. The target surface is periodically swept in through a plasma which sputters off the surface of the target. This prevents the build up of redeposited material on the target and consequently keeps the target surface cleaner. The reduction of redeposited material on the target surface reduces the number of unwanted particulates which are ejected from the surface, manifesting themselves as disk defects.

Abstract: A replacement chamber shield is provided for a wafer processing machine that replaces many prior art shield components with a single piece shield. The shield is particularly suitable for use in a processing chamber of a vacuum processing machine of a type for processing a wafer in a vertically-oriented split-plenum, such as machines of the type described in U.S. Pat. Nos. 4,909,695 and 4,915,564 and the machine marketed under the trademark Eclipse Mark II by Tokyo Electron Limited. The shield is formed of sheet material formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter. Advantageous dimensions and geometric relationships to components of the machine are described and claimed.

Abstract: The present invention provides a cooldown chamber allowing more efficient and rapid cooling of a substrate. The substrate is cooled in the cooldown chamber utilizing a pair of cooling members, preferably mating “clam shell” style members, positioned adjacent the top and bottom surfaces of the substrate. While the top surface of the substrate should not be contacted directly, the upper cooling member can approach the substrate surface, preferably to within about 0.01 to about 0.03 inches. The bottom cooling member should also approach the bottom substrate surface, preferably making contact or being within about 0.01 to about 0.03 inches. With the cooling members closed to define an enclosure around a hot substrate, an inert gas is supplied into the enclosure at pressures between about 5 and about 30 torr to allow efficient thermal conduction from the substrate to the cooling members.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma plating system to an exterior position, and coupling the external vacuum pump to a vacuum chamber within the mobile storage volume of the mobile plasma plating system using a flexible piping segment, rigid coupling with a dampening effect, or other arrangement operable to reduce and/or eliminate the mechanical vibrations within the vacuum chamber due to the operation of the external vacuum pump.

Abstract: An in-line sputtering apparatus includes a deposition chamber, a target installed inside the deposition chamber, a substrate holder to hold a substrate, a substrate holder transferring mechanism which transfers the substrate holder relative to the target such that a thin film made of a material of the target that is formed on the substrate held by the substrate holder, first and second thickness distribution correcting members and a plate driving mechanism. The first and second thickness distribution correcting members are provided above the target, and each of the first and second thickness distribution correcting members has a plurality of movable plates. The plate driving mechanism is linked to the first and second thickness distribution correcting members and moves the corresponding movable plates of the first and second distribution correcting plates, symmetrically.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

Abstract: A sputter coating apparatus for depositing a thin uniform material coating onto exposed surfaces of objects. The apparatus includes a vacuum chamber having one or more sealably closable doors through which objects treated by sputter coating are loaded into and removed therefrom and a support positionable within the chamber for supporting the objects to be sputter coated. A vacuum source establishes a vacuum in the chamber when the door is closed and the objects are held by the support within the chamber. A sputtering target formed of a material to be sputter coated onto the objects is operably connected within the chamber and spaced apart from the objects. A process gas inlet is operably connected to introduce a process gas such as argon or nitrous oxide into said chamber after a vacuum is established.

Abstract: A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.

Abstract: The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device.

Abstract: A vacuum chamber for transporting at least one workpiece has two or more openings defining respective opening areas for treating or handling the at least one workpiece. A transport device is arranged relative to the openings and includes a drive shaft rotatable around a drive shaft rotational axis. Two or more conveyors transport at least one workpiece. A linear driver is operationally independent to linearly move respective ones of the two or more conveyors relative to the drive shaft, with a drive component in a radial direction relative to the axis. An obstructing member is provided for closing the openings when one of the conveyors is positioned adjacent to the openings by rotating the transport device and is moved by the linear drive towards the opening.

Abstract: A transfer chamber is provided. The transfer chamber has a temperature adjustment plate located in an upper portion of the chamber, a substrate handler located in a lower portion of the chamber, and a rotatable substrate carriage adapted so as to raise and lower between an elevation above a substrate supporting surface of the temperature adjustment plate, and an elevation below a substrate supporting blade of the substrate handler. The rotatable substrate carriage is adapted to transfer a substrate to and from the substrate supporting surfaces of the temperature adjustment plate, and of the substrate handler blade.

Abstract: An apparatus for depositing a protective film on a data recording disk, including the steps of depositing a magnetic film layer as a data recording layer on a surface of a substrate while the substrate is at a magnetic film deposition temperature; heating the substrate with the magnetic film layer thereon to a protective film deposition temperature; and depositing a protective film on the magnetic film layer while the substrate is at the protective film deposition layer; wherein the protective film deposition temperature is higher than the magnetic film deposition temperature.

Abstract: In a vacuum treatment apparatus for deposition of thin layers on shell-shaped substrates (2, 2′, . . .

Abstract: An alignment apparatus which obtains an amount of correction for centering a semiconductor wafer from four points of a wafer edge detected by noncontact proprioceptors in a wafer delivery position P1 where the semiconductor wafer is passed to a wafer carrying unit from a wafer carrying robot and centers the semiconductor wafer.

Abstract: A method and an apparatus for depositing a metal layer on a substrate use a sputtering technique wherein first sputter particles sputtered from a first target including a metal are deposited on the substrate. A first metal layer portion having a first thickness corresponding to 40 to 60% of the whole deposition thickness is formed on the substrate. Second sputter particles sputtered from a second target including a metal identical to the first target are deposited on the first metal layer portion. Thus, a second metal layer portion including a material identical to the first metal layer portion and having a second thickness corresponding to 40 to 60% of the whole deposition thickness is formed on the first metal layer portion. When depositing the second metal layer portion, a radio frequency bias is applied to a bottom surface of the substrate so that the first and second sputter particles deposited on the substrate are resputtered towards the surface of the substrate.

Abstract: A first disk carrier constructed in accordance with the invention is substantially circular, and has a size and shape such that it can be placed in an opening in a second, larger disk carrier. In one embodiment, the second, large disk carrier is a conventional disk carrier, e.g. used to hold a substrate during a magnetic disk manufacturing process. The first disk carrier is circular, and has a diameter equal (or substantially equal) to common substrates currently being manufactured. Therefore, the first disk carrier fits in and can be held by the second disk carrier. The first disk carrier has one or more openings for holding one or more substrates that have a diameter substantially less than the diameter of the opening of the second disk carrier.

Abstract: A load lock and related method of handling a substrate involves placing a substrate onto a vertically movable poppet and moving the poppet between two vertically opposed subchambers such that in moving the poppet toward one of the subchambers, that subchamber is sealed to atmosphere. The two subchamber system allows one substrate to be placed into a buffer and another substrate to be cooled at the same time. Also, the system allows for a slow vacuum to be made on the substrate in a subchamber to avoid undesirably loading the substrate by the otherwise immediate drop in pressure.

Abstract: A gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer and a Cr layer are sequentially deposited on a substrate on which a gate wire is formed. Next, the Cr layer is patterned to form a data line, a source electrode and a drain electrode. The doped amorphous silicon layer and the amorphous silicon layer are patterned at the same time, and the doped amorphous silicon layer is etched by using the data line, the source electrode and the drain electrode as etch stopper. Subsequently, a passivation layer is deposited and patterned to form a contact hole. An ITO layer is deposited and patterned to form a pixel electrode. According to the present invention, an oxide layer is prevented by performing a sequential deposition of the four layers in a vacuum state. As a result, the on current of the TFT is increased, and HF cleaning is not necessary because no oxide layer is formed. Therefore, the overall TFT manufacturing process is simplified.

Abstract: An exemplary configurable vacuum system and method are provided for use in coating or plating that provides the capability to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly and a vacuum chamber. The vacuum table assembly may include a support frame, an insulated surface, a mechanical drive mounted to the support frame, an electrical feed through mounted to the support frame, a filament positioned above the insulated surface between a first filament conductor and a second filament conductor, a filament power connector electrically coupled to the first filament conductor through a first filament power contact pad of the filament power connector and to the second filament conductor through a second filament power contact pad of the filament power connector, and a platform operable to support the substrate.

Abstract: An apparatus for flow-line treatment of articles has two chambers. The first chamber is a vacuum working chamber to treat articles in an artificial atmosphere. First transport means transport articles through the first chamber and at least one lock at the end of the chamber. Second transport means transport articles though the second chamber. The lock has a movable body with at least two cavities, installed inside an airtight shell. The movable body moves between a first position, in which one cavity connects with the first chamber and the first transport means extend into the cavity, and a second position, in which the cavity connects with the second chamber and the second transport means extend into the cavity. The at least two cavities are adjacent and similar and are provided with openings. Each cavity holds one carrier with articles. The first and second transport means provide simultaneous and antiparallel movement.

Abstract: A substrate processing system includes a primary processing assembly and secondary processing assembly. The secondary processing assembly has one or more interconnected modules and includes one or more process stations. The primary and secondary processing assemblies are connected by a vacuum conveyor, so that the substrates remain in vacuum during transport. The secondary processing assembly may include one or more modules which are interconnected to provide a desired system configuration. A dual processing module, including first and second process stations, is selectably operable in a serial mode or a parallel mode.

Abstract: A method for fabricating a semiconductor device is provided. The method includes the steps of: forming an insulating layer having an opening region on a semiconductor substrate; forming a first ruthenium layer on the insulating layer and the opening region by sputtering at a first pressure; forming a second ruthenium layer on the first ruthenium layer by first chemical vapor deposition (CVD) at a first flow rate of oxygen gas and at a second pressure, wherein the second pressure is greater than the first pressure; and forming a third ruthenium layer on the second ruthenium layer by second CVD at a second flow rate of oxygen gas and at a third pressure, wherein the third pressure is greater than the first pressure.

Abstract: A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon films, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter deposited to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, with breaking the vacuum seal, to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.

Abstract: An exemplary mobile plating system and method are provided for performing a plating process using virtually any known or available deposition technology for coating or plating. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control module to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A processing system and associated method for vacuum evaporation of material onto a substrate. The processing system includes a loading chamber, a transfer chamber, and a thermal processing chamber arranged together to form a cluster tool. The cluster tool arrangement provides the system a continuous processing capability. The system also includes an evacuation system arrangement for evacuating the processing system to adequate processing pressure levels. The evacuation system arrangement includes a series of pumps, which are capable of maintaining the selected processing pressure levels for continuous thermal evaporation processing without the need for lowering the pressure to deep vacuum pressure levels.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction is disclosed. The magnetic film forming system includes a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable while still holding the substrate, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.

Abstract: A cluster tool for forming semiconductor devices using a wafer process includes: at least a load port where wafers are loaded; a front end system including an ATM robot and an ATM aligner, the front end system positioned under atmospheric pressure in a clean room condition; at least a load lock chamber including at least a vacuum wafer transfer device; at least a process module where the wafer process are conducted on the wafers; and at least a slot valve located between the load lock chamber and the process module; wherein the ATM robot transfers the wafers from the load port to the ATM aligner for a positional aligning and then transfers the positional-aligned wafers to the vacuum wafer transfer device; wherein the ATM aligner aligns the wafers for adequate process in the process module; and wherein the vacuum wafer transfer device includes at least a end effector that supports the wafers transferring by the ATM robot, and then the vacuum transfer device puts the wafers into the process module for the wafer

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: A vacuum coating installation has at least a central distribution station which can be evacuated and has a transport arrangement driven in a controlled manner essentially along a plane, for the material to be treated. One operating station for the distribution station as well as at least two processing stations for the material to be treated are provided. The three or more stations communicate by way of operating openings with the distribution station, through which openings the material to be treated can be transported from one station into the other by the transport arrangement for the material to be treated. The material to be treated is formed by individual workpiece holders of the installation, each having a plurality of workpiece supports.

Abstract: A method and apparatus are provided for substrate handling. In a first aspect, a temperature adjustment plate is located below a substrate carriage and is configured such that a substrate may be transferred between the temperature adjustment plate and the substrate carriage by lifting and lowering the substrate carriage above and below the top surface of the temperature adjustment plate. The temperature adjustment plate may be configured to heat and/or cool a substrate positioned thereon. In a second aspect, the substrate carriage is magnetically coupled so as to rotate and/or lift and lower magnetically, thereby reducing particle generation via contact between moving parts (and potential chamber contamination therefrom). In a third aspect, a substrate handler positioned below the substrate carriage is both magnetically coupled and magnetically levitated, providing further particle reduction.

Abstract: A processing system and associated method for vacuum evaporation of material onto a substrate. The processing system includes a loading chamber, a transfer chamber, and a thermal processing chamber arranged together to form a cluster tool. The cluster tool arrangement provides the system a continuous processing capability. The system also includes an evacuation system arrangement for evacuating the processing system to adequate processing pressure levels. The evacuation system arrangement includes a series of pumps, which are capable of maintaining the selected processing pressure levels for continuous thermal evaporation processing without the need for lowering the pressure to deep vacuum pressure levels.

Abstract: A vacuum treatment system has a vacuum chamber in which there is at least one part which is driven in rotation and is connected by a gear train which comprises at least two rotating transmission bodies with a motor drive unit. The rotating transmission bodies produce a relative motion in a rolling manner. For this purpose, the bodies have axes of rotation that are not aligned. The rotating transmission bodies are magnetically drive-coupled to each other, and at least one of them is located in the vacuum chamber.

Abstract: A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.