Abstract: A hard, wear resistant coating and a method of forming the coating on a substrate to be exposed to hydrocarbons is provided. A substrate is provided in a chamber. A film is deposited onto the substrate by physical vapor deposition (PVD), where the film includes a bulk layer and an outer termination layer. The deposition of the termination layer is mitigated. The termination layer is removed from the film, leaving the remaining bulk layer disposed over the substrate. And when the substrate is exposed to hydrocarbons in an environment having wear additives, friction modifiers, or naturally occurring compounds, a durable tribological layer is formed on an outer surface of the bulk layer to create a coating having low friction and anti-wear properties.

Abstract: The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

Abstract: So as to control the operation of a sputter target (9) during lifetime of the target and under HIPIMS operation part (I) of a magnet arrangement associated to the target (9) is retracted from the target (9) whereas a second part II of the magnet arrangement is, if at all, retracted less from the addressed backside (7) during lifetime of the target (9). Thereby, part I is closer to the periphery of target (9) than part II, as both are eccentrically rotated about a rotational axis (A).

Abstract: A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.

Abstract: An sputtering device includes a carrier that includes a main body and support members. The main body defines a receiving space and includes a lateral surface defining at least one groove extending along a longitudinal direction. The receiving space and the at least one groove communicate with each other. The at least one groove is defined by a first surface and a second surface. The first surface defines recessed portions along the longitudinal direction and communicates with the receiving space. The support members are used for hanging workpieces. Each of the support members includes at least one support arm protruding from the lateral surface and is selectively and movably retained by one of the recessed portions.

Abstract: A coating apparatus is revealed that is designed to coat substrates by means of a physical vacuum deposition process or a chemical vacuum deposition process or a combination thereof. Said coating apparatus is particular in that it uses a rotatable magnetron (14) that is coverable with an axially moveable shutter (18). Such an arrangement enables to keep the magnetron target clean or to clean the target in between or even during subsequent coating steps. The shutter further provides for a controllable gas atmosphere in the vicinity of the target. The arrangement wherein the magnetron is centrally placed is described. Substrates are then exposed to the sputtering source from all angles by hanging them on a planetary carousel (24) that turns around the magnetron.

Abstract: In-line metalizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metalized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metalized one or more parts to the conveyor system.

Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

Abstract: A thin film encapsulation layer manufacturing apparatus is provided that may include a transfer chamber, a sputtering chamber, a monomer deposition chamber, a chemical vapor deposition (CVD) chamber, and an atomic layer deposition (ALD) chamber. The transfer chamber may be connected to each of the other chambers, and may be configured to align a substrate. Each of the other chambers may be configured to receive from and transfer to the transfer chamber a substrate. The sputtering chamber may be configured to form a first inorganic layer on the substrate by a sputtering process. The monomer deposition chamber may be configured to deposit a first organic layer on the first inorganic layer. The CVD chamber may be configured to form a second inorganic layer on the first organic layer. The ALD chamber may be configured to form a third inorganic layer on the second inorganic layer.

Abstract: A sputtering device includes a vacuum chamber; a film depositing roll; at least one target material; a gas supply mechanism; three drive rolls (downstream conveying rolls); and three temperature control mechanisms for maintaining a temperatures of the drive rolls substantially constant in a range where the temperature is 80° C. or less and is higher than a minimum temperature in the vacuum chamber so that a long film substrate that is detached from the film depositing roll and is conveyed to the downstream conveying rolls is not deformed by rapid cooling.

Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: To improve the result of a glow discharge process is disclosed to be performed in a Physical Vapor Deposition (PVD) coating apparatus comprising a door, at least 2 lateral rotating cathodes with targets. The apparatus is equipped by rotating shields or tube shutters (4). The method comprises the steps of operating the apparatus so that the arc of said second electrode (2) burns directly to said door. The rotary shield or tube shutter on a first electrode (1) is open and said rotary shield or tube shutter (4) on a second electrode (2) is closed. Then a positive potential is applied on said first electrode (1), so that a potential between said second electrode (2) and said first electrode (1) is applied. The positive potential applied on said first electrode (1) is selected so that the electron stream does not burn only against the door since the electrons being affected by the higher potential to said first electrode (1).

Abstract: Planetary carriers (22) for workpieces mounted on a carousel (19) are provided within a vacuum chamber. A source (24) for a cloud comprising ions (CL) is provided so that a central axis (ACL) of the cloud intercepts the rotary axis (A20) of the carousel (19). The cloud (CL) has an ion density profile at the moving path (T) of planetary axes (A22) which drops to 50% of the maximum ion density at a distance from the addressed center axis (ACL) which is at most half the diameter of the planetary carriers (22). When workpieces upon the planetary carriers (22) are etched by the cloud comprising ions material which is etched off is substantially not redeposited on neighboring planetary carriers but rather ejected towards the wall of the vacuum chamber.

Abstract: A method and apparatus for forming a solar cell. The apparatus includes a housing defining a vacuum chamber and a rotatable substrate apparatus configured to hold a plurality of substrates on a plurality of surfaces. A first sputtering source is configured to deposit a plurality of absorber layer atoms of a first type over at least a portion of a surface of each one of the plurality of substrates. An evaporation source is configured to deposit a plurality of absorber layer atoms of a second type over at least a portion of the surface of each one of the plurality of substrates.

Abstract: A rotary sputtering target assembly and method of making the same including a target and a backing tube having a plated bonding surface. The backing tube and the target are bonded together along the plated bonding surface.

Abstract: A chamber for physical vapor deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapor deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.

Abstract: Apparatuses for forming material films on a solar cell substrate of substantially uniform thickness and processes for forming the same are disclosed. The process performed in the apparatuses is physical vapor deposition (PVD) in some embodiments. In one embodiment, an apparatus includes a specially configured flow aperture. In another embodiment, an apparatus includes moveable shutters which open and close in synchronization with a rotating drum on which substrates are mounted for processing. In other embodiments, the apparatus includes a variable power supply or drum speed control which automatically vary the power supply to the apparatus or drum speed respectively in synchronization with the rotating drum.

Abstract: The invention provides a multi-film forming apparatus including a substrate holder stock chamber for storing a plurality of substrate holders separately from a path in the multi-film forming apparatus, so that production can be performed without being affected by the process of removing a film accumulated on the surface of the substrate holder and the process of replacing the substrate holder, or by the process of removing a film accumulated on the surface of the substrate holder or the process of replacing the substrate holder, and hence high-throughput production is possible. A branch path is provided on the path of the multi-film forming apparatus, and a substrate holder stock chamber for storing a plurality of substrate holders which enables retrieval of the substrate holder from the path and feeding of the substrate holder to the path is provided.

Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one rotatable target over the substrate; varying the relative position between the at least one target and the substrate. In addition, the present disclosure describes varying the distance between a target and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate.

Abstract: A sputter-coating apparatus is configured for forming coatings on a plurality of workpieces, and includes a deposition chamber defining a cavity, a plurality of targets received in the cavity, and a plurality of supporting assemblies. Each target includes a first target plate and an opposite second target plate. The supporting assemblies are received in the cavity and arranged between the first target plates and the second target plates. Each supporting assembly includes a hollow rotating post for rotating about a first axis substantially parallel to a lengthwise direction thereof, at least one support extending from the post, and at least one driving unit. Each support includes a connecting arm rotatably connected to the post and a fixing portion attached to the connecting arm for supporting a workpiece. The driving unit is configured for driving each connecting arm to rotate relative to the corresponding post about a second axis.

Abstract: A coating device includes a rotatable base, a board for holding workpieces, a positioning shaft positioned on the rotatable base, two eccentric wheels, a rack, and two reciprocating shafts. The two eccentric wheels are fixed on the positioning shaft and extend from the positioning shaft along two opposite directions. The two eccentric wheels are parallel to and spaced from each other. The rack is rotatably connected to the rotatable base. The rack is capable of rotating around the positioning shaft. Each reciprocating shaft is positioned on the rack. Each reciprocating shaft includes a hinge portion rotatably connected to an end of the board and a sliding portion slidably connected to the edge of a corresponding eccentric wheel. The two eccentric wheels are capable of driving the two reciprocating shafts to move alternately toward and away from the positioning shaft along radial directions of the positioning shaft.

Abstract: A sputtering device includes a main body and a loading device received in the main body. The main body includes a top portion, a bottom portion, and a sidewall connected between the top portion and the bottom portion, an upper bearing mounted on the top portion, and a lower bearing mounted on the bottom portion. The loading device includes an outer frame, an inner frame received in the outer frame, and a gear device arranged between the outer frame and the in inner frame. The outer frame is rotatably connected to the upper bearing and includes a plurality of first rods arranged in a first circle. The inner frame is rotatably connected to the lower bearing and includes a plurality of second rods arranged in a second circle. The gear device is configured for bringing the outer frame and the inner frame to rotate in opposite directions.

Abstract: Exemplary embodiments provide a multi-source deposition method and apparatus for the provision of coatings within relatively tight tolerances. An apparatus may be provided including control circuitry and a plurality of deposition sources for coating a substrate. The sources may be disposed a selectable distance away from the substrate and/or may be tilted at a selected angle. The control circuitry may utilize information indicative of an emission pattern associated with each of the sources to adjust a power to each of the sources during coating of the substrate. By rotating the substrate relative to the sources and/or controlling parameters such as source height, tilt angle, and source power, a substantially uniform coating thickness may be achieved on the substrate.

Abstract: A coating apparatus includes a housing, a sputter mechanism, an evaporation mechanism, and a workpiece transport assembly. The housing defines a receiving space. The workpiece transport assembly includes a fixing plate, a first transport member, and a first shaft. The fixing plate is secured to the housing via the receiving space and divides the receiving space into a sputter chamber and an evaporation chamber. The sputter mechanism is mounted in the sputter chamber, and the evaporation mechanism is mounted in the evaporation chamber. The fixing plate defines a through hole. The sputter chamber communicates with the evaporation chamber via the through hole. The first transport member is configured to transport at least one workpiece. The first shaft is secured to the first transport member and rotatably mounted to the housing.

Abstract: A composite coating apparatus includes a main body, two carrying boards, and two actuators. The main body defines a first chamber and a second chamber with a separating board intervening therebetween. The separating board defines a coating opening intercommunicating with the chambers. The carrying boards are received in the first chamber and rotatably connected to the separating board at two sides of the coating opening. Each carrying board defines a receiving groove for holding a substrate. The actuators are configured for driving the carrying boards to rotate between a first coating position, in which the substrate is exposed to the second chamber for a first coating process carried out in the second chamber via the coating opening, and a second coating position, in which the substrate faces away from the separating board for a second coating process carried out in the first chamber.

Abstract: A carrier for use during sputtering includes a main body and support members. The main body defines a receiving space and includes a lateral surface defining at least one groove extending along a longitudinal direction. The receiving space and the at least one groove communicate with each other. The at least one groove is defined by a first surface and a second surface. The first surface defines recessed portions along the longitudinal direction and communicates with the receiving space. The support members are used for hanging workpieces. Each of the support members includes at least one support arm protruding from the lateral surface and is selectively and movably retained by one of the recessed portions.

Abstract: The present invention relates to a magnetron sputtering device including a large ring cathode having a defined inner radius. The position of the ring cathode is offset in relation to a center point of a planetary drive system. An anode or reactive gas source may be located within the inner radius of the ring cathode. Lower defect rates are obtained through the lower power density at the cathode which suppresses arcing, while runoff is minimized by the cathode to planet geometry without the use of a mask.

Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: A physical vapor deposition device includes a chamber; a cathode and an opposite anode, a target material, and supporting device arranged in the chamber. The target material and the supporting device are positioned between the cathode and the anode. The supporting device includes a rotatable device and a hollow supporting plate. The hollow supporting plate is configured for securing the workpiece and exposing part of the workpiece where is needed to be coated. The hollow supporting plate is movably fastened to the rotatable device. A distance from the hollow supporting plate to the rotatable device can be adjusted when the hollow supporting plate is rotated together with the rotatable device in order to align workpiece with the target material.

Abstract: A coating device includes a rotatable base, a board for holding workpieces, a positioning shaft positioned on the rotatable base, two eccentric wheels, a rack, and two reciprocating shafts. The two eccentric wheels are fixed on the positioning shaft and extend from the positioning shaft along two opposite directions. The two eccentric wheels are parallel to and spaced from each other. The rack is rotatably connected to the rotatable base. The rack is capable of rotating around the positioning shaft. Each reciprocating shaft is positioned on the rack. Each reciprocating shaft includes a hinge portion rotatably connected to an end of the board and a sliding portion slidably connected to the edge of a corresponding eccentric wheel. The two eccentric wheels are capable of driving the two reciprocating shafts to move alternately toward and away from the positioning shaft along radial directions of the positioning shaft.

Abstract: According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.

Abstract: A sputter-coating apparatus for coating a plurality of workpieces includes a deposition case defining a cavity, a supporting assembly received in the cavity, and a target assembly received in the cavity and extending through the supporting assembly to face the workpieces. The supporting assembly includes a plurality of supporting members. Each supporting member includes a body and a plurality of adjusting units extending through the body. Each adjusting unit includes a supporting pole fixed to the body, a first fixing pole and a second fixing pole fixedly connected to the supporting pole and radially extending from the supporting pole, a first threaded pole and a second threaded pole retractably connected to the supporting pole and radially extending from the supporting pole, and a driving member received in the supporting pole for driving the first threaded pole and the second threaded pole to retract relative to the supporting pole.

Abstract: A sputtering device includes a main body and a loading device received in the main body. The main body includes a top portion, a bottom portion, and a sidewall connected between the top portion and the bottom portion, an upper bearing mounted on the top portion, and a lower bearing mounted on the bottom portion. The loading device includes an outer frame, an inner frame received in the outer frame, and a gear device arranged between the outer frame and the in inner frame. The outer frame is rotatably connected to the upper bearing and includes a plurality of first rods arranged in a first circle. The inner frame is rotatably connected to the lower bearing and includes a plurality of second rods arranged in a second circle. The gear device is configured for bringing the outer frame and the inner frame to rotate in opposite directions.

Abstract: A sputtering device includes a hollow main body, a loading device, and a driving device received in the main body. The main body includes a top plate and a bottom plate opposite to the top plate. The loading device includes a supporting base rotatably positioned on the bottom plate, a ring-shaped frame positioned on the top plate, and a number of rods. The ring-shaped frame is coaxial with the supporting base and includes a number of assembly plates connecting to each other in sequence. The rods are positioned on the supporting base along the circumference thereof, and substantially perpendicularly connect between the ring-shaped frame and the supporting base along the axis of the supporting base. The driving device connects to the supporting base and the rods, and drives the supporting base and driving the rods to rotate.

Abstract: The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one target over the substrate; varying the relative position between the at least one target and the substrate to a first position (I), which first position is maintained for a predetermined first time interval; and varying the relative position between the at least one target and the substrate to a second position (II), which second position is maintained for a predetermined second time interval. The present disclosure further describes a system for coating a substrate.

Abstract: A film forming apparatus and a film forming method includes: a vacuum chamber; a holder for a film formation object, the holder being rotatably provided in the vacuum chamber; and a sputter source capable of holding a plurality of targets, the sputter source being spinnably provided so that the opposed area of the target with respect to the film formation object can be varied. They can perform uniform and efficient film formation in accordance with the size of a film formation object using a simple configuration, with less possibility of contamination and easy maintenance.

Abstract: An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target.

Abstract: A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder (4) having a lateral surface (3), a middle part (12), a first end region (7) and a second end region (9) opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than the outer diameter of the middle part.

Abstract: The apparatus (1) for coating a substrate (14) by reactive sputtering comprises an axis (8), at least two targets (11,12) in an arrangement symmetrically to said axis (8) and a power supply connected to the targets (11,12), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate (14) by coating a substrate (14) by reactive sputtering in an apparatus (1) comprising an axis (8). The method comprises a) providing a substrate (14) to be coated; b) providing at least two targets (11,12) in an arrangement symmetrically to said axis (8); c) alternatively operating said targets (11,12) as cathode and anode during coating. Preferably, the targets (11,12) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Abstract: A sputtering apparatus for forming a coating film made of a metallic film on a coating surface of a substrate by sputtering to have such a film thickness that gradually increases or gradually decreases from its one end side to the other end side. The apparatus comprising at least one supporting means supporting at least one substrate such that a coating surface thereof is opposed to an emission surface of a sputtering target at an angle, and at least one shielding member for preventing part of sputtering particles emitted from the emission surface from reaching the coating surface. The at least one shielding member being disposed in the vacuum chamber so as to be positioned in a space between the coating surface of the at least one substrate and the emission surface of the sputtering target.

Abstract: A chamber for physical vapour deposition is provided. The chamber includes a housing, a door for opening and closing the housing, and a bearing for receiving a target, wherein the bearing is oriented in a first direction. Further, the chamber is adapted so that the target is at least partially removable from the chamber in the first direction. According to an embodiment, a chamber for physical vapour deposition is provided. The chamber is adapted for receiving at least one target and a substrate. The chamber includes a housing, a door, and at least one bearing for mounting the target, wherein the bearing is attached to the door.

Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

Abstract: A sputtering apparatus includes a housing having an enclosure and a plurality of gas-introduction holes defined in the sidewalls of the enclosure, a substrate holder for holding substrates, a plurality of targets surrounding the substrate holder, the targets and the substrate holder are accommodated in the housing, and a driving member for rotating the targets such that the targets can be selectively oriented to face the substrate holder or the gas-introduction holes.

Abstract: A target base includes a fixed carrier, a rotatable carrier, a number of target housings, and a number of target supports. The rotatable carrier is rotatably mounted on the fixed carrier. The target housings are mounted on the fixed carrier around the rotatable carrier, and define receiving spaces adjacent to the rotatable carrier. The target supports are rotatably mounted on the target housings correspondingly. Each target support is able to rotate to be received in the receiving space of a corresponding one of the target housings or to move out of the receiving space.

Abstract: To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes.