Abstract: To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes.

Abstract: A sputtering bracket includes a curved plate body, a plurality of frames, and a plurality of fastening members. The body defines a plurality of through holes and has an inner concave side. The frames are pivotally connected with the curved plate body and received in the respective through holes. Each frame is rotatable relative to the curved plate body such that either one of opposite sides thereof can be exposed at the inner concave side. The fastening members are mounted on the curved plate body, and are spring-loaded for resilient engagement with the respective frames.

Abstract: The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.

Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

Abstract: The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. A plasma processing apparatus (1) includes: a substrate holder (11) that supports a substrate (10); a magnet holder (31) that is provided around the substrate holder and supports a magnet (30); a cathode unit (50) that is provided above the substrate, and applied with a discharge voltage; a rotating mechanism (20, 40) that is capable of rotating one or both of the substrate holder and the magnet holder along the planar direction of the process surface of the substrate; a rotational position sensor (25, 45) that detects the rotating positions of the substrate and the magnet; and a control device (60) that controls an operation of each operation element.

Abstract: A sputtering apparatus includes a susceptor having a substrate and a plurality of target devices facing the substrate and substantially parallel to each other, each target device being rotatable.

Abstract: There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher. In a film forming chamber 2 the pressure of which is controlled, while a rotating drum 7 is rotated by the driving of a drive motor 8, a film is formed on the top surface of a substrate 12 on a substrate tray 13 held on a substrate holder 10 by cathodes 17a and 17b for outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrate 12 on the substrate tray 13 held on the substrate holder 10 by cathodes 14a and 14b for inner surface to which a d.c. voltage or an a.c.

Abstract: The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

Abstract: A sputtering device is provided. The sputtering device comprises a housing defining a chamber, and a carrier arranged within the housing. The carrier comprises a base, a plurality of supporting members, a plurality of spacing members, and a cap. The supporting members are spaced from each other and rotatably connected to the base. Each supporting member defines at least one cavity to receive at least one workpiece. The spacing members are fixed to the base, each of which is arranged between two adjacent supporting members. The cap is arranged above the plurality of supporting members and the plurality of spacing members to form a substantially enclosed space. The driving device is used to drive the carrier to rotate and to drive the plurality of supporting members to rotate with respect to the base.

Abstract: A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+?, where n is a natural number, including 0, and ?10 degrees<?<10 degrees.

Abstract: The invention relates to a method and an apparatus for the treatment of substrates, in particular for the coating of plastic containers on a rotary installation. A plurality of treatment devices are arranged on the rotor and pass through a plurality of process phases as a function of their angle position on the rotor. For at least one process phase, the angle position can be set variably as a function of the current rotational speed of the rotor.

Abstract: A film forming apparatus and a film forming method includes: a vacuum chamber; a holder for a film formation object, the holder being rotatably provided in the vacuum chamber; and a sputter source capable of holding a plurality of targets, the sputter source being spinnably provided so that the opposed area of the target with respect to the film formation object can be varied. They can perform uniform and efficient film formation in accordance with the size of a film formation object using a simple configuration, with less possibility of contamination and easy maintenance.

Abstract: The invention relates in general level to radiation transference techniques as applied for utilisation of material handling. The invention relates to a radiation source arrangement comprising a path of radiation transference, or an improved path of radiation transference, which path comprises a turbine scanner or an improved turbine scanner. The invention also concerns a target material suitable for vaporization and/or ablation. The invention concerns an improved turbine scanner. The invention concerns also to a vacuum vaporization/ablation arrangement that has a radiation source arrangement according to invention. The invention concerns also a target material unit, to be used in coating and/or manufacturing target material.

Abstract: A rotatable target device for sputtering installations, the rotatable target device including: a rotatable target base adapted for holding a solid target cylinder, the solid target cylinder having an inner axial face, an outer axial face and at least one front face connecting the inner axial face with the outer axial face; wherein the rotatable target base comprises a flexible element, a first face adapted to the shape of the inner axial face of the solid target cylinder and a second face adapted to hold the flexible element outside of the solid target cylinder.

Abstract: A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder having a lateral surface, a middle part, a first end region and a second end region opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than the outer diameter of the middle part.

Abstract: The invention relates to a method and a device which are used for the plasma treatment of work pieces. Said work piece is inserted into an at least partially evacuatable chamber of a treatment station (3) and the work piece is positioned inside the treatment station of retaining elements. At least one operating agent is at least partially impinged upon by a transporting device (44) which is displaced together with the treatment station on a closed and rotating transport path.

Abstract: A method of producing substrates with functional layers which have high optical properties and/or a high surface smoothness, in particular a low turbidity and significantly lower roughness, is provided. The method includes a sputtering process for coating a substrate with at least one functional layer, the sputtering process being interrupted at least once by the application of an intermediate layer with a thickness of less than 20 nm.

Abstract: A plasma-assisted sputter deposition system includes a reactor 1 into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.

Abstract: Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section.

Abstract: A sputtering device includes at least: a vacuum container defining a vacuum space; a substrate holder installed rotatably in the vacuum space; a substrate installed on the substrate holder; a target for forming thin film on the substrate; and a rotatable sputtering cathode in which the target is installed. The sputtering cathode is slanted relative to the substrate, and a center of the target is eccentric to a rotation axis of the sputtering cathode.

Abstract: A double-layer shutter control method of a multi-sputtering system provided with three targets in a single chamber and a double-layer rotating shutter mechanism having shutter plates which independently rotate and have holes formed therein, comprising selecting a target by a combination of holes of a first shutter plate and a second shutter plate and uses the selected target for a pre-sputtering step and a main sputtering step with continuous discharge so as to deposit a film on a substrate, whereby it is possible to prevent cross-contamination between targets due to target substances etc. deposited on the shutter plates.

Abstract: To provide a vertical substrate transfer apparatus and a film-forming apparatus capable of, regardless of a carrying position of a substrate, subjecting either surface thereof to film-formation, and capable of supporting and carrying the substrate without interfering with a non-film-forming surface. A film-forming apparatus (1) according to the present invention includes a carrier (15) giving support so that either surface of a substrate (W) is processable, a first position changing section (3) changing a carrying position of the carrier (15), and a carrying chamber (9) housing the carrier, whose position is changed therein and which carries the carrier to a film-forming chamber (10). With the above construction, it becomes possible to subject either surface to film-forming processing regardless of the carrying position of the substrate (W). Further, it becomes possible to change a film-forming surface (Wa) in the course of carrying the substrate (W).

Abstract: A magnetic recording medium includes a disk substrate, and recording cells arrayed on the disk substrate in a track direction, the recording cells includes a ferromagnetic pattern and a magnetic pattern formed on one of two sidewalls of the ferromagnetic pattern in the track direction and having a lower crystalline magnetic anisotropy constant Ku than that of the ferromagnetic pattern.

Abstract: A coating apparatus is revealed that is designed to coat substrates by means of a physical vacuum deposition process or a chemical vacuum deposition process or a combination thereof. Said coating apparatus is particular in that it uses a rotatable magnetron (14) that is coverable with an axially moveable shutter (18). Such an arrangement enables to keep the magnetron target clean or to clean the target in between or even during subsequent coating steps. The shutter further provides for a controllable gas atmosphere in the vicinity of the target. The arrangement wherein the magnetron is centrally placed is described. Substrates are then exposed to the sputtering source from all angles by hanging them on a planetary carousel (24) that turns around the magnetron.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: A film coating method enables, when forming film layers in response to optical characteristics on a substrate, to coat gradation range layers of decreasing thickness without distributions, and to coat films on a plurality of substrates at the same time. The gradation range layer is formed by sputtering evaporation targets of dielectric substances with an introduction gas, followed by forming the films with compounds generated by applying a reactive gas to the films.

Abstract: The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is located in the bearing housing for sealing the drive shaft to the housing. An at least one electrical contact is disposed between a power source and the cathode for transmittal of an oscillating or fluctuating current to the cathode. The electrical contact between the power source and the cathode is disposed inside of the vacuum chamber, greatly reducing, and almost eliminating, the current induced heating of various bearing, seals, and other parts of the rotatably sputter cathode assembly.

Abstract: A single, right-angled end-block is claimed for rotatably carrying a target in a sputtering apparatus. The end-block comprises all necessary means to drive, energise, bear and seal (coolant and gas) the target in the sputtering apparatus from the outside through a single opening in a wall or door. The right-angled end-block rotates the target around an axis of rotation that is parallel to the wall on which the target is mounted. By preference the end-block is situated below the target in order to allow easy drainage of the coolant.

Abstract: There is disclosed a manufacturing method of a phase shift mask blank in which dispersions of phase angle and transmittance among blanks can be reduced as much as possible and yield is satisfactory. In the manufacturing method of the phase shift mask blank, a process of using a sputtering method to continuously form a thin film on a transparent substrate comprises: successively subjecting a plurality of substrates to a series of process of supplying the transparent substrate into a sputtering chamber, forming the thin film for forming a pattern in the sputtering chamber, and discharging the transparent substrate with the film formed thereon from the sputtering chamber; supplying and discharging the transparent substrate substantially at a constant interval; and setting a film formation time to be constant among a plurality of blanks.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: A sample holder for physical vapor deposition equipment, which is disposed in a vacuum chamber for holding samples, includes a transmission mechanism and a fastening mechanism. The transmission mechanism includes a stationary shaft and a transmission element. The fastening mechanism includes a rotation shaft unparalleled with the stationary shaft of the transmission mechanism, a support arm for securely holding the rotation shaft, and a rotational disk assembly that drives the rotation shaft and the support arm to rotate about the transmission mechanism. Two ends of the rotation shaft are connected to a rotation element and an affixation base. The rotation element rotates in response to the transmission element, thereby rendering the affixation base to perform inclined rotation. In this manner, the nano-meter ions can be coated continuously and homogeneously onto the sample surface to enhance the surface hardness, the erosion resistance and the life expectancy of the sample.

Abstract: The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.

Abstract: Methods and apparatuses for electrochemical-mechanical processing of microelectronic workpieces. One embodiment of an electrochemical processing apparatus in accordance with the invention comprises a workpiece holder configured to receive a microelectronic workpiece, a workpiece electrode, a first remote electrode, and a second remote electrode. The workpiece electrode is configured to contact a processing side of the workpiece when the workpiece is received in the workpiece holder. The first and second remote electrodes are spaced apart from the workpiece holder. The apparatus can also include an AC power supply, a DC power supply, and a switching assembly. The switching assembly is coupled to the workpiece electrode, the first remote electrode, the second remote electrode, the AC power supply, and the DC power supply.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: The present invention provides a film deposition system capable of effectively cooling a work having a large volume, and a film deposition method using this system. The film deposition system has, within a vacuum chamber 1, an evaporation source 3 for forming a film on a work 2 and a cooling device 4 for cooling the work 2, characterized in that the work 2 has an internal space 15 communicating with the outside through an opening part 14, and the cooling device 4 is insertable to and drawable from the internal space 15 through the opening part 14 of the work 2 to cool the work 2 from the inside.

Abstract: An object of the invention is to provide a method of sputtering and a device for sputtering which can improve distribution of a film's thickness and coverage distribution improve. The device for sputtering includes at least a substrate, a substrate holder which holds the substrate, a target for forming a thin film on the substrate, a sputtering cathode in which the target is installed, a means for sputtering which makes materials of the target sputter to the substrate. Sputtering is carried out by making the substrate holder rotate and making a sputter cathode unit comprising at least one sputtering cathode move along an arc over the rotating substrate held on the substrate holder.

Abstract: An object of the invention is to provide a sputtering device which can provide increased distribution of film formation and coverage distribution better than prior sputtering devices. Thus, this invention is that, in the sputtering device constituted of a substrate holder for holding a substrate, at least one target for forming a thin film on the substrate, at least one sputtering cathode which has the target and magnets arranged behind the substrate, an axis of the target is inclined to an axis of the sputtering cathode, and the sputtering cathode is rotated on its axis to make the target swing relative to the substrate.

Abstract: A focus ring assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a focus ring having one or more wear indicators for determining the lifetime of the focus ring, wherein the coupling of the focus ring to the substrate holder facilitates auto-centering of the focus ring in the plasma processing system. For example, a centering ring mounted on the substrate holder can comprise a centering feature configured to couple with a mating feature on the focus ring.

Abstract: There is disclosed a method of depositing a nanocomposite coating of stainless steel and a metallic carbide or metallic nitride, e.g. chromium carbide or chromium nitride, onto a stainless steel substrate 10, including the steps of (a) providing the stainless steel substrate 10; (b) depositing stainless steel on the substrate 10; (c) depositing chromium carbide or chromium nitride on the substrate 10; and allowing a nanocomposite coating 14 of the stainless steel and chromium carbide or chromium nitride to form on the substrate 10.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: An exemplary configurable vacuum system is provided for use in coating or plating that provides the capability and versatility to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly, a mechanical drive, an electrical feed through, a filament, and a vacuum chamber. The vacuum table assembly may include a support frame, a sliding means, such as a roller or rollers, an insulated surface, and a platform operable to rotate and support the substrate. The mechanical drive is operable to rotate the platform, the electrical feed through provides an electrical signal to the substrate, and the filament is positioned relative the substrate. The vacuum chamber includes a main opening, an internal volume, and a receiving means, such as a railing or member, operable to receive and support the vacuum table assembly within the internal volume of the vacuum chamber and through the sliding means of the vacuum table assembly.

Abstract: A cylindrical magnetron target and spindle attachment apparatus for affixing a cylindrical magnetron target to a rotatable support spindle. The attachment apparatus includes a target and a spindle. The target defines a receiving portion. The spindle has a spindle plug. The spindle plug is disposed within the receiving portion of the target. The attachment apparatus increases the speed and ease of removing and installing cylindrical rotating targets onto a support spindle.

Abstract: A rotating sputtering target(s) is segmented so as to include a plurality of different sputtering material portions or segments radially dispersed around the outer periphery of the target. This enables a plurality of different layers to be sputter-deposited, one after the other, using the same sputtering target as the target rotates. The thicknesses of the different layers can be controlled by the radially extensive size of the different segments, the rotation speed of the target, the material sputter rate, the sputtering power used, and/or the line speed of the sputter coater in which the target(s) is located. One or more such targets may be used in a coater according to different embodiments of this invention.

Abstract: A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

Abstract: An apparatus for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from one compartment to the other compartment. The transfer mechanism comprises two doors that seal the pathway between the two compartments between movement so that the two compartments are isolated and the workpiece can be processed sequentially and isolatedly in each compartment. The apparatus further comprises components to enable the processing of a workpiece: a delivery system to delivery precursor, a plasma source to generate a plasma and a vacuum pump to maintain a sub-atmospheric pressure. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then to transfer the workpiece to the second compartment for a reaction or a plasma reaction on the existing thin layer.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.