Abstract: An electrodeposit formed by using a tin or tin alloy plating bath containing a prescribed branched polyoxyalkylene compound, such as an alkylene oxide adduct of aliphatic monoamine or polyamine in which a plurality of oxyalkylene chains are bonded to a nitrogen atom of an amine structure in a molecule, or an alkylene oxide adduct of glycerin or polyglycerin in which oxyalkylene chains are respectively bonded to a plurality of oxygen atoms of an alcohol structure in a molecule, suppresses formation defect such as abnormal growth of the electrodeposit. The electrodeposit also improves yield from the viewpoint of quality control.

Abstract: The tin alloy plating solution of the present invention includes (A) a soluble salt including at least a stannous salt, (B) a soluble salt of a metal nobler than tin, (C) an alkane sulfonic acid including 9 to 18 carbon atoms in a molecule or a salt thereof, (D) a non-ionic surfactant including one or more phenyl groups in a molecule, and (E) a leveling agent.

Abstract: Provided is an electroplating solution of tin or a tin alloy in which the thickness variation of wafer bumps is maintained at a low level even in various changes of plating conditions and thus the mass productivity is improved. The electroplating solution of tin or a tin alloy may include tin ions as metal ions, a conductive salt, a carboxylic acid as a structure refiner, and a combination of a flavone compound and a quaternary ammonium compound as a thickness variation improving agent.

Abstract: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

Abstract: A tin or tin alloy plating solution includes: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid or a salt thereof; (C) a surfactant; and (D) a leveling agent. In addition, the surfactant contains polyoxyethylene polyoxypropylene alkylamine, an alkyl group of the polyoxyethylene polyoxypropylene alkylamine is CaH2a+1 (where a is 12 to 18). Further, in a case where a number of a functional group of polyoxypropylene of the polyoxyethylene polyoxypropylene alkylamine is set as p and a number of a functional group of polyoxyethylene of the polyoxyethylene polyoxypropylene alkylamine is set as q, the sum of p and q (p+q) is 8 to 21, and a ratio of p to q (p/q) is 0.1 to 1.6.

Abstract: A tin or tin alloy plating solution includes: (A) a soluble salt containing at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid or a salt thereof; (C) a phenyl-based surfactant formed of polyoxyethylene bisphenol ether represented by the General Formula (1); and (D) a leveling agent, here, in the Formula (1), X is CaH2a (a is 1 or 3) and m is 2 to 12.

Abstract: Copper electroplating compositions which include an imidazole compound enables the electroplating of copper having uniform morphology on substrates. The composition and methods of enable copper electroplating of photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: A non alpha controlled alloy that includes a metal and an alpha emitting material is utilized as a plating anode to selectively plate the metal upon a plating cathode. The metal may be selectively plated by pulse plating the non alpha controlled alloy with current control to suppress plating of the alpha emitting material upon the plating cathode. The metal may also be selectively plated by pulse plating the non alpha controlled alloy with potential control to suppress plating of the alpha emitting material upon the plating cathode. The metal may also be selectively plated by plating out the alpha emitting material upon a filtering cathode.

Abstract: Pyrazine derivatives which contain one or more electron donating groups on the ring are used as catalytic metal complexing agents in aqueous alkaline environments to catalyze electroless metal plating on metal clad and un-clad substrates. The catalysts are monomers and free of tin and antioxidants.

Abstract: The present invention describes a method of producing a p-type light-absorbing semiconductor copper zinc tin selenide/sulfide (Cu2(ZnxSn2-x)(SySe1-y)4) (abbreviated CZTS) with electrochemical deposition. It can be used in the production of solar cell when combined with an n-type inorganic or an organic semiconductor layer. The present method comprises a one-step or a sequence of depositions using electroplating to fabricate a low-cost and large-area CZTS solar cell, without using expensive and complicated deposition techniques or highly toxic and flammable chemicals in the production process. The present method significantly reduces the cost and energy requirement for production of solar cell.

Abstract: A cyanide-free tin alloy plating solution having outstanding serial stability as well as a method of precipitating tin alloy plating onto an electroconductive object using the tin alloy plating solution is disclosed. The tin alloy plating solution contains tin ions and one or more additional metal ions of silver, copper, bismuth, indium, palladium, lead, zinc, or nickel, and peptides with cysteine residues.

Abstract: Tin-containing electroplating baths having a combination of certain brightening agents provide tin-containing solder deposits having reduced void formation and smooth morphology.

Abstract: Tin electroplating baths having certain brightening agents and nonionic surfactants provide tin-containing solder deposits having good morphology, reduced void formation and improved within-die uniformity.

Abstract: A ceramic substrate includes a substrate body formed of ceramic and having a pair of surfaces each assuming a rectangular shape as viewed in plane, and a metallization layer formed on the surface of the substrate body and adapted to braze a metal frame thereon. A composite material layer is disposed between the surface of the substrate body and the metallization layer and is formed such that a ceramic portion, a metal portion 10m formed of a metal similar to a metal component of the metallization layer or a metal which, together with a metal component of the metallization layer, forms an all proportional solid solution, and a glass portion exist together. The thickness of the composite material layer is thinner than that of the metallization layer. A plating layer is deposited on the surface of the metallization layer.

Abstract: The present disclosure generally relates to the field of tin electroplating. More specifically, the present disclosure relates to methods for mitigating tin whisker formation on tin-plated films and tin-plated surfaces by doping the tin with gold.

Abstract: Silver and tin alloy electroplating baths include complexing agents which enable the electroplating of either silver rich or tin rich alloys. The silver and tin alloy electroplating baths are substantially free of lead. They may be used to electroplate silver and tin alloys in the manufacture of electronic components such as electrical connectors, finishing layers for metallic substrates, decorative applications and solder bumps.

Abstract: Tin-silver alloy electroplating baths having certain amine-oxide surfactants and methods of electrodepositing a tin-silver-containing layer using these baths are disclosed. Such electroplating baths are useful to provide tin-silver solder deposits having reduced void formation and improved within-die uniformity.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad on a semiconductor die; forming a seed layer over the conductive pad; defining a first mask layer over the seed layer; and forming a silver alloy bump body in the first mask layer. The forming a silver alloy bump body in the first mask layer includes operations of preparing a first cyanide-based bath; controlling a pH value of the first cyanide-based bath to be within a range of from about 6 to about 8; immersing the semiconductor die into the first cyanide-based bath; and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die.

Abstract: A cyanide-free tin alloy plating solution having outstanding serial stability as well as a method of precipitating tin alloy plating onto an electroconductive object using the tin alloy plating solution is disclosed. The tin alloy plating solution contains tin ions and one or more additional metal ions of silver, copper, bismuth, indium, palladium, lead, zinc, or nickel, and peptides with cysteine residues.

Abstract: Systems and methods for tin antimony plating are provided. One plating method includes doping a tin (Sn) plating solution with antimony (Sb). One method also includes electroplating a component using the antimony-doped tin plating. The antimony-doped tin plating formed by one method includes between about 1% and about 3% antimony.

Abstract: Tin or tin alloy plating liquid with a sufficient plated deposit can be formed in the opening without causing burns on the plated film surface or abnormal deposits, and which has a good via filling effect. When a specific ?,?-unsaturated carbonyl compound is added into the tin or tin alloy plating liquid, the plating liquid with good via filling performance can be obtained, and the deposit which is substantially free of voids and burns or abnormal deposits on the deposit surface are reduced.

Abstract: An aqueous cyanide-free electrolyte bath for plating of tin alloy layers on substrate surfaces comprising (i) a tin ion source and a source for another alloy element, characterized in that it further contains (ii) N-methyl pyrrolidone is described.

Abstract: An additive obtained from the reaction product obtained by reacting glutaraldehyde and at least one type of compound selected from hydrocarbon compounds containing a hydroxyl group, and at least one type of compound selected from amine compounds, as well as a tin or tin alloy plating solution containing this additive.

Abstract: Silver electroplating baths having certain sulfide compounds and methods of electrodepositing a silver-containing layer using these baths are disclosed. Such electroplating baths are useful to provide silver-containing solder deposits having reduced void formation and improved within-die uniformity.

Abstract: Tin-silver alloy electroplating baths having certain amine-oxide surfactants and methods of electrodepositing a tin-silver-containing layer using these baths are disclosed. Such electroplating baths are useful to provide tin-silver solder deposits having reduced void formation and improved within-die uniformity.

Abstract: Tin and tin alloy deposits which are substantially free of certain crystal planes or equivalents thereof inhibit or prevent whisker formation. The tin or tin alloy deposits which are free of these crystal planes and inhibit or prevent whisker formation may be deposited by electroplating. Tin alloys include tin/copper, tin/nickel, tin/silver, tin/bismuth, tin/zinc and tin/antimony. The tin and tin alloy baths used to deposit the tin and tin alloys may be acidic or alkaline.

Abstract: An additive obtained from the reaction product obtained by reacting glutaraldehyde and at least one type of compound selected from hydrocarbon compounds containing a hydroxyl group, and at least one type of compound selected from amine compounds, as well as a tin or tin alloy plating solution containing this additive.

Abstract: Disclosed is a tin electroplating bath containing a water-soluble tin salt, one or more substances selected from inorganic acids, organic acids and their water-soluble salts, and one or more substances selected from water-soluble tungsten salts, water-soluble molybdenum salts and water-soluble manganese salts. This tin electroplating bath enables to form a tin-plated coating film on components for electronic devices such as a chip component, crystal oscillator, bump, connector, lead frame, hoop member, semiconductor package and printed board, as a substitute for a tin-lead alloy plating material, while having high whisker suppressing effects.

Abstract: The invention provides an electroplating composition, method, and improved apparatus, which enables electroplating tin-silver alloys at high speed and without burning. The composition is an aqueous acidic solution including salts of stannous tin and a monovalent silver, and a complexing agent selected from the group consisting of thiocarbazides and thiohydrazides, and optionally an aldehyde and/or dialdehyde organic brightener compound. A sulfonic acid and a surfactant may also be included. The improved apparatus provides a protective structure substantially surrounding the anode(s) to decrease turbulence and the problematic silver displacement reaction.

Abstract: Disclosed are metal plating compositions for plating a metal on a substrate. The metal plating compositions include compounds which influence the leveling and throwing performance of the metal plating compositions. Also disclosed are methods of depositing metals on a substrate.

Abstract: Disclosed are metal plating compositions and methods. The metal plating compositions provide good leveling performance and throwing power.

Abstract: An electrolytic composition for the deposition of a matt metal layer onto a substrate and deposition process where the composition comprises a source of metal from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, In, Sn, Sb, Re, Pt, Au, Bi, and combinations thereof; a substituted or unsubstituted polyalkylene oxide or its derivative as an emulsion and/or dispersion former; and a compound comprising fluorated or perfluorated hydrophobic chains or which is a polyalkylene oxide substituted quaternary ammonium compound as wetting agent; wherein the electrolytic composition forms a microemulsion and/or dispersion.

Abstract: A tin plating solution and tin plating method for chip components minimizes tin shavings when plated components are rubbed together such as during bulk mounting. This minimizes sticking of the chip components together.

Abstract: Disclosed are metal plating compositions for plating a metal on a substrate. The metal plating compositions include compounds which influence the leveling and throwing performance of the metal plating compositions. Also disclosed are methods of depositing metals on a substrate.

Abstract: An additive obtained from the reaction product obtained by reacting glutaraldehyde and at least one type of compound selected from hydrocarbon compounds containing a hydroxyl group, and at least one type of compound selected from amine compounds, as well as a tin or tin alloy plating solution containing this additive.

Abstract: An additive obtained from the reaction product obtained by reacting glutaraldehyde and at least one type of compound selected from hydrocarbon compounds containing a hydroxyl group, and at least one type of compound selected from amine compounds, as well as a tin or tin alloy plating solution containing this additive.

Abstract: Disclosed are electrolyte compositions for depositing a tin alloy on a substrate. The electrolyte compositions include tin ions, ions of one or more alloying metals, a flavone compound and a dihydroxy bis-sulfide. The electrolyte compositions are free of lead and cyanide. Also disclosed are methods of depositing a tin alloy on a substrate and methods of forming an interconnect bump on a semiconductor device.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: The object of the present invention is to prevent generation of whisker in a Pb-free plating layer. Provided is a Pb-free Sn—B plating solution containing tin sulfate, which is a source of Sn ions, and dimethyl amine borane or trimethyl amine borane, which is a source of B ions.

Abstract: A method of forming an Sn—Ag—Cu ternary alloy thin-film of the present invention forms the ternary alloy thin-film by electroplating. A plating bath contains an Sn compound, an Ag compound, a Cu compound, an inorganic chelating agent and an organic chelating agent. The inorganic chelating agent is one of a polymerized phosphate-based chelating agent and a chelating agent represented by a chemical formula (I): MFX(X—Y)— . . . (I) where M is an arbitrary metal, X is an arbitrary natural number and Y is an oxidation number of M. The organic chelating agent is one of porphyrins, dipivaloylmethane, phthalocyanines and a compound represented by a chemical formula (II): R—(CH2CH2O)n-A . . . (II) where R is an alkyl group having a carbon number of 8 to 30, A is CH2COONa or CH2SO4Na and n is a natural number.

Abstract: The invention relates to an electrolyte used in connection with the deposition of a gold-tin alloy on an electroplatable substrate. This solution generally includes water; stannous and/or stannic tin ions, a complexing agent to render the stannous and/or stannic tin ions soluble, complexed gold ions, and an alloy stabilizing agent that includes ethoxylated compounds with phosphate ester functional group, brightening additives based on ethoxylated phosphate esters and alkali metal fatty acids dipropionates. The brighteners may be used alone or in conjunction with each other to achieve beneficial synergistic effect. The alloy stabilizing agent is present in an amount sufficient to stabilize the composition of the gold-tin deposit over a usable current density range. The solution has a pH of between 2 and 10 and the gold ions and tin ions are present in relative amounts sufficient to provide a deposit having a gold content less than 90% by weight and a tin content greater than 10% by weight.

Abstract: Disclosed herein is a method for forming a displacement tin alloy plated film, on a copper or a copper alloy on a substrate, a tin alloy plated film containing at least one additive metal selected from silver, bismuth, palladium, indium, zinc and antimony, the method including the steps of: forming an under layer on the copper or copper alloy in a low temperature displacement tin alloy plating bath at a temperature of 10 to 50° C.; and forming an upper layer on the under layer in a high temperature tin alloy plating bath at a temperature of 40 to 80° C. to form the displacement tin alloy plated film formed of the under layer and the upper layer.

Abstract: An electrolyte employed to selectively deposit a tin or tin alloy film on a composite substrate. A method for depositing the tin or tin alloy on the composite substrate also is described.

Abstract: An electroplating bath medium for electroplating articles with a tin-cobalt, tin-nickel, or tin-cobalt-nickel alloy comprises: at least one tin salt; an alloying metal salt comprising a cobalt salt and/or a nickel salt; a complexant comprising a hydroxycarboxylic acid or alkali metal salt thereof such as a sodium or potassium gluconate or heptonate complexant; boric acid; and a bath soluble substituted phenolic compound. The current regime applied to the plating bath can include time intervals of direct current and of pulsed current in order to selectively control the deposition of tin by activation or diffusion control.

Abstract: The invention relates to an electroplating solution for providing a deposit of an alloy of gold and tin. This solution includes an aqueous solvent in which gold is present in the form of a solution soluble cyanide complex and tin is present in the form of a solution soluble organotin complex. 2,2?-dipyridyl is present as an additive that allows the codeposition of useful gold-tin alloy compositions at current densities lower than would be possible in its absence, given the concentrations of the individual metallic components in the solution. This additive is generally used at a concentration of 0.1 to 1 grams per liter for imparting significant enhancements in providing gold-tin alloy deposits.

Abstract: An electrolytic plating method, including: preparing a plating solution including water which is a primary medium, a sulfonic acid, and tin, copper, and silver ions, and a complexing agent, concentrations of the sulfonic acid, and tin, copper, and silver ions being 0.5 to 5 mol/L, 0.21 to 2 mol/L, 0.002 to 0.02 mol/L, and 0.01 to 0.1 mol/L, respectively, a mole ratio of the silver-ion concentration to the copper-ion concentration being in a range of 4.5 to 5.58; and separating a solution around a soluble anode containing 90 percent or more of tin from the plating solution on a cathode side by a non-ionic micro-porous membrane having a pore diameter of 0.01 to 0.05 ?m and a thickness of 5 to 100 ?m.

Abstract: Disclosed are systems and methods of plating a tin alloy in an efficient, economical, and environmentally friendly manner. An electrochemical cell containing an anolyte compartment and a catholyte compartment separated by a selective membrane is employed. The selective membrane prevents ionic metals from migrating from the catholyte compartment to the anolyte compartment. A conduit may be employed in the electrochemical cell to permit one way flow of anolyte to the catholyte compartment thereby replenishing tin to the catholyte compartment.

Abstract: A tin-silver electrolyte and methods of depositing tin-silver alloys on a substrate.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.

Abstract: Disclosed are electrolyte compositions for depositing tin or tin-alloys at various current densities. Also disclosed are methods of plating such tin or tin-alloys on substrates, such as the high speed tin plating of steel.