Abstract: Aqueous acidic copper electroplating bath comprising: copper ions; at least one acid; halide ions; at least one sulfur containing compound selected form the group consisting of sodium 3-mercaptopropylsulfonate, bis(sodiumsulfopropyl)disulfide, 3-(N,N-dimethylthiocarbamoyl)-thiopropanesulfonic acid or the respective sodium salt thereof and mixtures of the aforementioned; at least one amine reaction product of diethylamine with epichlorohydrin or an amine reaction product of isobutyl amine with epichlorohydrin or mixtures of these reaction products; at least one ethylene diamine compound selected from the group having attached EO-PO-block polymers, attached EO-PO-block polymers and sulfosuccinate groups and mixtures thereof; at least one aromatic reaction product of benzylchloride with at least one polyalkylenimine and a method for electrolytically depositing of a copper coating using the electroplating bath.

Abstract: The present invention relates to an acidic aqueous composition (plating bath) for electrolytic copper plating (electrolytic deposition of copper), the composition comprising (i) copper (II) ions, (ii) one or more than one compound of Formula (Ia) (iii) one, two, three or more than three further compounds, which are different from the compound of Formula (Ia), with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of pyrazole compounds and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: Polymers of reaction products of dihalogens and compounds containing benzimidazole moieties are included in metal electroplating compositions to provide level metal deposits on substrates.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of imidazole and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of pyridyl alkylamines and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: The present disclosure relates to a leveling composition for electrodepositing metals.

Abstract: An additive for reducing voids after annealing of copper plating with through silicon via. The additive contains by weight percent: 0.05-1% of one or more of quaternized polyethylene imine and derivatives thereof having different molecular weights, and 1-10% of polyethylene glycol with an average molecular weight of 200-20000. The additive is used in combination with an electroplating solution of a copper methyl sulfonate system. The electroplating solution of a copper methyl sulfonate system contains 1-5 ml/L of the additive by volume ratio. The electroplating solution of a copper methyl sulfonate system contains by mass volume ratio: 50-110 g/L of copper ions, 5-50 g/L of methanesulfonic acid and 20-80 mg/L of chlorine ions. The electroplating solution also contains by volume ratio: 0.5-5 ml/L of accelerator, 5-20 ml/L of inhibitor and 5-10 ml/L of levelling agent.

Abstract: The present technology generally relates to copper plating solutions. Specifically, the present technology includes a copper plating solution comprising a source of copper ions and a conductivity salt wherein the copper plating solution has a pH between 1.7 and 3.5 as is essentially free of chloride ions. The present technology also relates to a method of using such copper plating solutions.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: A process of making a polymeric phenazonium compound having the general formula: wherein R1, R2, R4, R5, R6, R8 and R9 are the same or different, and represent hydrogen, a low alkyl or a substituted aryl, R3 starts as NH2 and is diazotized followed by polymerization, R5 and R8 may alternatively represent monomeric or polymeric phenazonium radicals, R7 is a carbon in the aromatic ring, and wherein RX—N—RY represents a substituted amine, and RX and RY represent any combination of CH3, C2H5, and hydrogen, except that RX and RY cannot both be hydrogen, A is an acid radical, and n is an integer from 2 to 100. The polymeric phenazonium compound is usable in as an additive in a metal plating bath.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract: A method for copper plating in a plating bath wherein the substrate is brought into contact with a leveller additive comprising a heterocyclic core having a thiol group and an amino group attached to said heterocyclic core by a spacer is disclosed. Said method is particularly suitable for filling recessed structures in the manufacture of printed circuit boards, IC substrates and semiconducting substrates.

Abstract: A process of making a polymeric phenazonium compound having the general formula: wherein R1, R2, R4, R5, R6, R8 and R9 are the same or different, and represent hydrogen, a low alkyl or a substituted aryl, R3 starts with NH2 and is diazotized followed by polymerization, R5 and R8 may alternatively represent monomeric or polymeric phenazonium radicals, R7 with its substituent group is a substituted amine, with RX and RY representing any combination of CH3, C2H5, and hydrogen, except that RX and RY cannot both be hydrogen, A is an acid radical, and n is an integer from 2 to 100, preferably from 2 to 20 is described. The polymeric phenazonium compound is usable in as an additive in a metal plating bath.

Abstract: This invention relates to copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds useful to deposit copper on the surface of a conductive layer. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. This invention also relates to methods of depositing copper layers using such copper plating baths.

Abstract: This invention relates to copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds useful to deposit copper on the surface of a conductive layer. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. This invention also relates to methods of depositing copper layers using such copper plating baths.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device. The plating composition comprises an electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: An electrolytic copper plating solution is provided which has an excellent via filling ability without using formaldehyde, which is harmful to the environment. An electrolytic copper plating solution which contains compounds which have an —X—S—Y— structure wherein X and Y are individually atoms selected from a group comprising hydrogen, carbon, sulfur, nitrogen, and oxygen atoms and X and Y can be the same only when they are carbon atoms and specific nitrogen-containing compounds. Good filled vias can be made without causing a worsening of the exterior appearance of the plating by using this electrolytic copper plating solution.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of one or more of certain pyridine compounds with one or more epoxide-containing compounds, that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of one or more of certain pyridine compounds with one or more epoxide-containing compounds, that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R1, R2, R3 are each independently selected from an H atom and an organic radical having from 1 to 20 carbon atoms, R4 is a divalent, trivalent or mutlivalent organic radical which does not comprise a hydroxyl group in the ? or ? position relative to the nitrogen atom of the imidazole rings is an integer.

Abstract: A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of one or more of certain cyclodiaza-compounds with one or more epoxide-containing compounds that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: A method of filling copper in a non-through hole on a substrate that has been treated to render it conductive, which comprises plating said substrate in an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid and a filling additive that is a polymer having the activities of both of a brightener and a leveler.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain benzimidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: A composition for plating copper includes an electrolyte solution, an accelerator, a suppressor and a leveler. The electrolyte solution includes a soluble copper salt, sulfuric acid and hydrochloric acid. The accelerator includes about 20 to about 60 ppm of a disulfide compound. The suppressor includes about 40 to about 100 ppm of a polyethyleneoxide (PEO)-polypropyleneoxide (PPO)-polyethyleneoxide (PEO) triblock copolymer. The PEO-PPO-PEO triblock copolymer has a weight average molecular weight of about 300 to about 10,000. The leveler includes about 0.01 to about 100 ppm of arylated polyethyleneimine.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: A composition comprising a source of metal ions and at least one leveling agent obtainable by condensing at least one trialkanolamine of the general formula N(R1—OH)3 (Ia) and/or at least one dialkanolamine of the general formula R2—N(R1—OH)2 (Ib) to give a polyalkanolamine(II), wherein the R1 radicals are each independently selected from a divalent, linear or branched aliphatic hydrocarbon radical having from 2 to 6 carbon atoms, and the R2 radicals are each selected from hydrogen and linear or branched aliphatic, cycloaliphatic and aromatic hydrocarbon radicals having from 1 to 30 carbon atoms, or derivatives obtainable by alkoxylation, substitution or alkoxylation and substitution of said polyalkanolamine(II).

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain benzimidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a substituted pyridyl polymer compound for leveling.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: An object of the present invention is to provide an electrolytic copper coating that exhibits a bendability and flexibility equal to or better than those of rolled copper foil after the heat history in a circuit board fabrication process, especially after a heat history equivalent to the heat history applied when bonding with a polyimide film. The present invention provides an electrolytic copper coating and a method of manufacturing the same wherein, when performing heat treatment so that the LMP value shown in Equation 1 becomes 9000 or more, the result becomes a crystal distribution of crystal grains, having a maximum length of crystal grains after heat treatment of 10 ?m or more, of 70% or more: LMP=(T+273)*(20+Log t)??Equation 1 where, 20 is a material constant of copper, T is temperature (° C.), and t is time (hr).

Abstract: The object of the present invention is to obtain a low profile electrolytic copper foil with a low surface roughness at the rough surface side (opposite side from the glossy side) in the electrolytic copper foil manufacture using a cathode drum and, particularly, to obtain an electrolytic copper foil with excellent elongation and tensile strength that permits fine patterning. Another object is to obtain a copper electrolytic solution that allows uniform copper plating without pinholes on a 2-layer flexible substrate. This copper electrolytic solution contains, as an additive, a compound having the specific skeleton represented by General Formula (1) below which is obtained by an addition reaction in which water is added to a compound having in a molecule one or more epoxy groups: wherein A is an epoxy compound residue and n is an integer of 1 or more.

Abstract: A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.

Abstract: There is obtained a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode drum, and more particularly an electrolytic copper foil which allows fine patterning, and is superior in terms of elongation and tensile strength at ordinary temperatures and high temperatures. The present invention provides a copper electrolytic solution, containing as additives an organo-sulfur compound and a quaternary amine compound polymer obtained by homopolymerizing a compound in which the nitrogen of an acrylic type compound having a dialkylamino group is quaternized, or copolymerizing the compound with another compound having an unsaturated bond, and an electrolytic copper foil manufactured using this electrolytic solution.

Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.

Abstract: An object of the present invention is to provide an electro-deposited copper foil having the equivalent low-profile surface as in a conventional low-profile electro-deposited copper foil and extremely large mechanical strength and a method for manufacturing the same. To achieve the object, the electro-deposited copper foil is formed by depositing fine copper crystal grains having a small deviation of grain-diameter that has never been obtained in the art. The electro-deposited copper foil has a low-profile and glossy surface and has extremely large mechanical strength expressed by a tensile strength as received of 70 kgf/mm2 to 100 kgf/mm2 and has a tensile strength after heating (180° C. for 60 minutes) corresponding to 85% or more of the tensile strength as received.